CI 13007
Abstract: bud48 13005 A BUX 115 BUD48A 13005 ballast BUD98I BUV-481 MJE-13007 BUV 471
Contextual Info: {ZT SGS-THOMSON Ä 7 # MD K I[LiOT©liî!IDËi CONSUMER RADIO AND AUDIO MEMORIES CMOS EEPROMs Type Package Description ST24C02 TS59C11 TS93C46 DIP8, S08 DIP8 DIP8 256 x 8, clock frequency 100 kHz, I2C compatible 128 x 8, clock frequency 250 kHz, consumption 3/0.1 mA
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ST24C02
TS59C11
TS93C46
M9306
M9346
CI 13007
bud48
13005 A
BUX 115
BUD48A
13005 ballast
BUD98I
BUV-481
MJE-13007
BUV 471
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mje13005-1
Abstract: 13005 ballast 13007 transistor 13007 ic st24c02 13007 applications 13007 TRANSISTOR TS93C46 ballast with 13005 MJE-13007
Contextual Info: {ZT SGS-THOMSON CONSUMER Ä 7 # MD K I[LiOT©liî!IDËi RADIO AND AUDIO MEMORIES CMOS EEPROMs Type Package Description ST24C02 TS59C11 TS93C46 DIP8, S08 DIP8 DIP8 256 x 8, clock frequency 100 kHz, I2C compatible 128 x 8, clock frequency 250 kHz, consumption 3/0.1 mA
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ST24C02
TS59C11
TS93C46
M9306
M9346
mje13005-1
13005 ballast
13007
transistor 13007
ic st24c02
13007 applications
13007 TRANSISTOR
ballast with 13005
MJE-13007
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SGSF465
Abstract: SGSF445 sgsf444 SGSF323 mje13005-1 MJE-13007 SGSIF443 transistor 13005 M9306 SGSF424
Contextual Info: {Z T SGS-THOMSON CONSUMER Ä 7 # MD K I[LiOT©liî!IDËi RADIO AND AUDIO MEMORIES CMOS EEPROMs Type Package Description ST24C02 TS59C11 TS93C46 DIP8, S08 DIP8 DIP8 256 x 8, clock frequency 100 kHz, I2C compatible 128 x 8, clock frequency 250 kHz, consumption 3/0.1 mA
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ST24C02
TS59C11
TS93C46
M9306
M9346
SGSF664
SGSF665
SGSF663
SGSF661
SGSF465
SGSF445
sgsf444
SGSF323
mje13005-1
MJE-13007
SGSIF443
transistor 13005
SGSF424
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IRF 850
Abstract: mje13005-1 transistors bu 407 13005 A 13005 ballast IRF 426 IRFP 450 application 13007 applications SGSP364 IRF 810
Contextual Info: L^mg SGS-THOMSON A / f MMiLKgWMtSS consum er TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION v CBO 'c v CEO T yp e N P N Package ptot hFE @ V (A) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400
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2N5576
Abstract: MT111 2N1828 MP1537 BUY28 B170026 2n1821 2N2535 2n2585 MP1552A
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D S Y M B O L S & C O D E S COM MON TO M O R E T H A N O N E T E C H N I C A L S E C T IO N LIN E No. T Y P E No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . t Switching type, also listed in Section 12
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diff15
75OP0
A580-2405
250kSA
SFT268
6000n
2N2341
350ktA
75Om0
2N5576
MT111
2N1828
MP1537
BUY28
B170026
2n1821
2N2535
2n2585
MP1552A
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MHT1810
Abstract: 2n1821 113003 2N463 MHT2008 2n2585 A580-1202 A580-1603 ASZ16 MP1534
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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NPN110.
75OP0
A580-2405
250kSA
SFT268
6000n
2N2341
350ktA
75Om0
MHT1810
2n1821
113003
2N463
MHT2008
2n2585
A580-1202
A580-1603
ASZ16
MP1534
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High Voltage Bus-bars
Abstract: mj 13007 mj 13008 3790A C37-90 13009T
Contextual Info: Directives & Standards Technical Information EMC Electromagnetic Compatibility EMC General The aim of electromagnetic compatibility considerations is to avoid or minimize the influence of electromagnetic phenomena on a device, equipment or system and on living or
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MP2143
Abstract: MP2145 2n463 MP2143A MT63 2N1029 2n2585 ASZ16 MP1534 transistor 2SB235
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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NPN110.
75OP0
A580-2405
250kSA
SFT268
6000n
2N2341
350ktA
75Om0
MP2143
MP2145
2n463
MP2143A
MT63
2N1029
2n2585
ASZ16
MP1534
transistor 2SB235
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EC35-3c8
Abstract: 3843B 13005 TRANSISTOR IC 3843B 4N50 transistor 13005 switching power supply with 3843b Z7156 EC35PCB1 EC35 TRANSFORMER
Contextual Info: TS3842B/3843B High Performance Current Mode Controller Designed for Off-Line and DC-to-DC converter applications. DIP-8 SOP-8 General Description The TS3842B and TS3843B series are high performance fixed frequency current mode controllers. This is specifically designed for Off-Line and DC-to-DC converter applications offering the designer a
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TS3842B/3843B
TS3842B
TS3843B
54BSC
10BSC
27BSC
05BSC
EC35-3c8
3843B
13005 TRANSISTOR
IC 3843B
4N50
transistor 13005
switching power supply with 3843b
Z7156
EC35PCB1
EC35 TRANSFORMER
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transistor TF78
Abstract: AC178 ASZ16 RT150B 113003 2N2134 2s882 2SA231 GFT26 TRANSISTOR at202
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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NPN110.
75OP0
A580-2405
250kSA
SFT268
6000n
2N2341
350ktA
75Om0
transistor TF78
AC178
ASZ16
RT150B
113003
2N2134
2s882
2SA231
GFT26 TRANSISTOR
at202
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KL8503
Abstract: CK256 CK258 CK311 CK312 CK313 CK314 2SB26 KM7002 MS7 package
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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NPN110.
75OP0
A580-2405
250kSA
SFT268
6000n
2N2341
350ktA
75Om0
KL8503
CK256
CK258
CK311
CK312
CK313
CK314
2SB26
KM7002
MS7 package
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TI3028
Abstract: TI3027 TI-3028 2S52 NKT501 MP1560A ti3029 ti3030 TRANSISTOR b1181 MP1535A
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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NPN110.
75OP0
A580-2405
250kSA
SFT268
6000n
2N2341
350ktA
75Om0
TI3028
TI3027
TI-3028
2S52
NKT501
MP1560A
ti3029
ti3030
TRANSISTOR b1181
MP1535A
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A400M
Abstract: ASZ16 2N1841 113005 2n2585 MP1534 2SC23 2SC24 2SC437 2SC438
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT
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NPN110.
75OP0
A580-2405
250kSA
SFT268
6000n
2N2341
350ktA
75Om0
A400M
ASZ16
2N1841
113005
2n2585
MP1534
2SC23
2SC24
2SC437
2SC438
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RT3062
Abstract: BLY98 2SC931 1768-0815 2SC1002 2SC1003 2SC807 2SC830 ta6200 2SC685
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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NPN110.
75OP0
A580-2405
250kSA
SFT268
6000n
2N2341
350ktA
75Om0
RT3062
BLY98
2SC931
1768-0815
2SC1002
2SC1003
2SC807
2SC830
ta6200
2SC685
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AD166
Abstract: 2SB123 transistor 2N1434 ASZ16 LT5085
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE II MIN. MAX Pc T6TT
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B170008
Abstract: 113003 B170002 B170003 B170007 A580-0403 2n2585 B170004 SDT8111 B170005
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C I I MIN. M A X Pc T 6 T T
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NPN110.
75OP0
A580-2405
250kSA
SFT268
6000n
2N2341
350ktA
75Om0
B170008
113003
B170002
B170003
B170007
A580-0403
2n2585
B170004
SDT8111
B170005
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2N2128
Abstract: T4 0660 2N5577 2N5579 MD38
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. t * - 40°c 45°C # - 5 0 °C 6 0 °C 0 - §- k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C
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NPN110.
75OP0
A580-2405
250kSA
SFT268
6000n
2N2341
350ktA
75Om0
2N2128
T4 0660
2N5577
2N5579
MD38
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2SC102 transistor
Abstract: 2SC102 transistor 2Sc102 1763-0625 micro transistor 1203 2SC519 2SC520 TK30556 TK30557 TK30558
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C
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NPN110.
75OP0
A580-2405
250kSA
SFT268
6000n
2N2341
350ktA
75Om0
2SC102 transistor
2SC102
transistor 2Sc102
1763-0625
micro transistor 1203
2SC519
2SC520
TK30556
TK30557
TK30558
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ZT2015
Abstract: SDT1000 MHT8012 857m A400M Stc1094 1205t B170026 0805T
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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NPN110.
75OP0
A580-2405
250kSA
SFT268
6000n
2N2341
350ktA
75Om0
ZT2015
SDT1000
MHT8012
857m
A400M
Stc1094
1205t
B170026
0805T
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PDF
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CX20549
Abstract: KB926 MCP67MV MCP67 6690AS MCP67MV- A2 athlon socket AM3 pin diagram G6179-100000 amd sempron pins G6179
Contextual Info: 5 4 3 2 1 Power On Sequence AC IN mode ACIN +5VALW/+3VALW +1.2VALW D EC->MCP67 D EC_RSMRST# (PWRGD_SB) ON_OFF ->EC EC->MCP67 PWRBTN_OUT# (PWRBTN#) MCP67->EC SLP_S5# EC->PWR SYS_ON 10~12ms >0ms +1.8V/+0.9V >0ms C PU6->MCP67 MEM_VLD MCP67->EC SLP_S3#
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MCP67
MCP67
MCP67--
PU11--
CX20549
KB926
MCP67MV
6690AS
MCP67MV- A2
athlon socket AM3 pin diagram
G6179-100000
amd sempron pins
G6179
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VEB mikroelektronik
Abstract: Datenblattsammlung SY 625 V40511D mikroelektronik datenblattsammlung Diode KD 514 KD512A mikroelektronik Berlin "halbleiterwerk frankfurt" VEB Kombinat mikroelektronik Erfurt
Contextual Info: \ñ ñ lB rW *m X S á B Í4 ti& * 311' ill c e l e k t r o n i k - b a u e i e m e n t e ? 2/86 . Die vorliegenden Datenblätter beinhalten Listen i Infonmatic-aen ü b e r elektronischer Sie können abgeleitet beinhalten n ur z u r Information» Halbleiterbauelemente
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POWER TRANSFORMER E154515
Abstract: scheme e131175 sampo E159656 foxconn e253117 e131175 XEPEX E140166 sony bando power transformer power transformer e190246 tamradio transformer e199273
Contextual Info: 10129 LIST OF COMPANY IDENTIFICATIONS The List of Company Identifications contains the trade names, trademarks, or other designations authorized for use in lieu of these Company names. ‘‘ ’’ — 2CS SRL ’’ — ACT CO LTD ‘‘ ‘‘ ’’ — 3E HK LTD
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TRANSISTOR tip122 CHN 949
Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
Contextual Info: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.
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38v01
TRANSISTOR tip122 CHN 949
E2955T
BD706
TU F 13003
13003 Transistor NPN Power TO 126
transistor E2955T
construction linear amplifier 2sc1945
LA 4301
8d679
transistor bf 175
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415v two phase welding machine str CIRCUIT DIAGRAM
Abstract: shell tellus c10 oil toroid international ltd P/N TT63-630 shell tellus c10 oil data sheet 33-20l capacitor
Contextual Info: ELMARK Has been a registered trademark for Europe since the year of 2000 and is part of the international company ELMARK HOLDING SC. Our company is licensed for the manufacture of the full range of professional low-voltage electrical equipment. The Headquarters of ELMARK HOLDING AD are situated in Varna, Bulgaria. There is our logistics center which
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