13007 M Search Results

13007 h3

Abstract: tr 13007 13007 13007 2 transistor mje13006 ste+13007 13007 switching application
Contextual Info: MJE13006/13007 MJE13006/13007 High Voltage Switch Mode Applications • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

tr 13007

Abstract: transistor 13007 T 13007 D 13007 NPN Transistor 13007 13007* transistor MJE13006 13007 13007 switching application data sheet 13007
Contextual Info: MJE13006/13007 MJE13006/13007 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

13007

Abstract: MJE13007 MJE-13007 transistor 13007 Y 13007 13007* transistor equivalent 13007 mje13007 equivalent 13007 applications 13007 transistor
Contextual Info: SEMICONDUCTOR 13007 MARKING SPECIFICATION TO-220AB PACKAGE 1. Marking method Laser Marking 2. Marking K 1 MJE 2 13007 R 3 611 4 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name MJE MJE13007 13007 2006. 1. 9 3 hFE Grade R 4 Lot No. 611 Revision No : 0

mj 13007

Abstract: mj 13005 13005 A mj 13009 13005a 13009 13007 13005 13005 2 MJE13005A
Contextual Info: pxfl f\ second source devices produits seconde source BUX BUX MJE MJE MJE MJE MJE M JE MJE MJE MJE Type v CEO V VCEX (V) 84 85 13004 13005 13005 A 13006 13007 13007 A 13008 13009 13009 A 400 450 300 400 400 300 400 400 300 400 400 800 1000 600 700 850 600

EB 13007

Abstract: p 13007 13007 T 13007 W 13007 TRANSISTOR E 13007 NPN Transistor 13007
Contextual Info: KSE13006/13007 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION TO-220 • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector Base Voltage : KSE13006 : KSE13007

Transistor 13007

Abstract: T 13007 13007 TRANSISTOR 13007* transistor NPN Transistor 13007 13007 KSE13007 equivalent 13007 2 transistor 13007 datasheet KSE13006
Contextual Info: KSE13006/13007 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : KSE13006 : KSE13007 Collector Emitter Voltage : KSE13006

transistor 13007

Abstract: NPN Transistor 13007 13007 TRANSISTOR data sheet 13007 13007 13007* transistor 13007 applications transistor 13007 equivalents 13007 switching application 13007 npn
Contextual Info: ST 13007 NPN Silicon Transistor for high voltage, high-speed power switching application TO-220 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400 V Emitter Base Voltage

transistor E 13007

Abstract: 13007 m FAIRCHILD E 13007 T 13007 13007 2 transistor *e13007 FAIRCHILD E 13007- 1 E 13007 0
Contextual Info: KSE13006/13007 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Sw itching • Suitable fo r Sw itching R egulator and M otor Control ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Voltage Sym bol : KSE13006 Rating VcBO

transistor 13007

Abstract: 13007
Contextual Info: KSM13006/13007 TO-220 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control 1.Base NPN Silicon Transistor 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO

SE 13007

Abstract: D 13007 K 13007 T 13007 E 13007 p 13007 j 13007 D 13007 13007t E 13007 0
Contextual Info: A E G CORP 1?E D 0 Q S cm5t> QQQ' l bMB 3 • TE 13006 TE 13007 TTEÜ1-? 5E3£SI> j e le c tro n ic Oeat* T«hnotog«s r - 33-13 Silicon NPN Power Transistors Applications: Switching mode power supply, electronic ballast Features: • In multi diffusion technique

Contextual Info: 13007 ST AN DARD • · TO-220 A Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 9 V Collector Current DC IC 8 A TA=25 PC 2 W TC=25 PC 80 W Junction Temperature TJ 150 Storage Temperature TSTG -55-150 Collector Dissipation

A 13007

Abstract: 13007 m p 13007
Contextual Info: HA13007 Quad Driver T h e H A 13007 m ono lith ic, bipolar, high-voltage, h igh-current quad driver is especially designed for s w itc h in g a p p l ic a tio n s . T h is d e v ic e is rec o m m en d e d fo r in te rfa cin g lo w -lev e l lo g ic to peripheral loads such as relays, solenoids, stepping

transistor 13007

Abstract: D343ag transistor13007 13007 NPN Transistor 13007 13007 2 transistor KSE13007 equivalent KSE13007 d343a
Contextual Info: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 13007 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：D343AG-00 芯片厚度：240±20µm 管芯尺寸：3430x3430µm 2 焊位尺寸：B 极 870×475µm 2；E 极 1080×480µm 2

T 13007

Abstract: E 13007 13007 KSE13007 equivalent R13007
Contextual Info: NPN S I L I C O N T R A N S I S T O R 汕头华汕电子器件有限公司 13007 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：D320AG-00 芯片厚度：240±20µm 管芯尺寸：3200x3200µm 2

MKP capacitor

Abstract: power capacitor vishay
Contextual Info: PhMKDg., Triangular, LVAC www.vishay.com Vishay ESTA ESTAdry D-Type, LVAC Power Capacitors FEATURES • Self-healing technology • Over pressure tear-off fuse • Smallest available height for 50 kvar units: 210 mm + 68 mm for terminals • Excellent heat dissipation

Contextual Info: PhMKDg., Triangular, LVAC www.vishay.com Vishay ESTA ESTAdry D-Type, LVAC Power Capacitors FEATURES • Self-healing technology • Over pressure tear-off fuse • Smallest available height for 50 kvar units: 210 mm + 68 mm for terminals • Excellent heat dissipation

D 13007 K

Abstract: LD 13007 p 13007 13007
Contextual Info: , E F REVISIONS REV A M E C H A N IC A L ECN, ERN PRO DUCT DRAWING APP R D . K.L. S H E LL S : S TA M P ED IN SER T: HIGH T E M P E R A TU R E R E S IS TAN T TH E R M O P LA S TIC , G LASS R E IN FO R C E D . FLAM M A B ILIT Y RATING U L 9 4 V - 0 , B LA C K .

Contextual Info: PhMKDg., Triangular, LVAC www.vishay.com Vishay ESTA ESTAdry D-Type, LVAC Power Capacitors FEATURES • Self-healing technology • Over pressure tear-off fuse • Smallest available height for 50 kvar units: 210 mm + 68 mm for terminals • Excellent heat dissipation

CI 13007

Abstract: bud48 13005 A BUX 115 BUD48A 13005 ballast BUD98I BUV-481 MJE-13007 BUV 471
Contextual Info: {ZT SGS-THOMSON Ä 7 # MD K I[LiOT©liî!IDËi CONSUMER RADIO AND AUDIO MEMORIES CMOS EEPROMs Type Package Description ST24C02 TS59C11 TS93C46 DIP8, S08 DIP8 DIP8 256 x 8, clock frequency 100 kHz, I2C compatible 128 x 8, clock frequency 250 kHz, consumption 3/0.1 mA

13007 applications

Abstract: en 13007
Contextual Info: PhMKDg., Triangular, LVAC Vishay ESTA ESTAdry D-Type, LVAC Power Capacitors CAPACITORS IN TRIANGULAR CASING 3-PHASE CAPACITOR, INDOOR APPLICATION The PhMKDg series capacitor in a triangular aluminum case with a standard rating of 50 kvar, augments Vishay ESTA

BUV 471

Abstract: BUV 481 BUV-481 CI 13007 BUX 115 MJE-13007 MJE13005A BUV46 MJE13007 BUV-471
Contextual Info: F=Z SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# MO K IlLI g¥lSήi!l©i POWER BIPOLAR 700 / 1000 V VCBO RANGE •c (A 2 2 4 4 4 4 5 5 5 5 5 5 5 5 6 6 7 8 8 8 9 9 9 9 9 9 9 9 12 12 12 15 15 15 15 15 15 15 15 15 16 16 16 16 24 24 30 32 32 35 vCBO (V)

Contextual Info: Battery Snaps 123-5004-GR, 123-5006-GR, 123-5008-GR Date Last Revised: 1-30-07 L 4±.157 .157±.04 25±.50 (.98±.02) Black (-) 11.90±.50 (.47±.02) Red (+) 7.90±.50 (.31±.02) 4.50±.50 (.177±.02) Solderless Ring Terminal Inside View Side View Dimensions: mm (In.)

Contextual Info: AM P Catalog 1307612 AMPLIMITE Subminiature D Connectors Revised 7-01 HDP-22 Crimp Snap-In Contact Connectors Precision Formed Crimp Snap-In Contacts, Size 22 DF Input/Output Connectors Material: Pin— Brass Socket— Phosphor bronze Finish: A— Duplex plated .000030 [0.00076]

mje13005-1

Abstract: 13005 ballast 13007 transistor 13007 ic st24c02 13007 applications 13007 TRANSISTOR TS93C46 ballast with 13005 MJE-13007
Contextual Info: {ZT SGS-THOMSON CONSUMER Ä 7 # MD K I[LiOT©liî!IDËi RADIO AND AUDIO MEMORIES CMOS EEPROMs Type Package Description ST24C02 TS59C11 TS93C46 DIP8, S08 DIP8 DIP8 256 x 8, clock frequency 100 kHz, I2C compatible 128 x 8, clock frequency 250 kHz, consumption 3/0.1 mA