1303A Search Results

Contextual Info: TOSHIBA TH50VSF1302/1303AAXB TOSHIBA MULTI CHIP INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI CHIP PACKAGE DESCRIPTION The TH50VSF1302/1303AAXB is a package of mixed 2,097,152-bit SRAM and 8,388,608-bit FLASH memory. The SRAM and FLASH memory organized 262,144 words by 8 bits SRAM and 1,048,576

SQT-108-01-F-D-RA

Abstract: LTC3480EDD LPS4018-332MLC DC1303 LT3480 Si2306BDS
Contextual Info: DEMO CIRCUIT 1303A QUICK START GUIDE LTC4098EPDC: USB Compatible Switching Power Manager/Li-Ion Charger with Overvoltage Protection DESCRIPTION Demonstration Circuit 1303A is a high efficiency USB Power/Li-Ion battery manager plus a HV regulator battery tracking controller. The LTC4098EPDC is available in a 20-pin 3mm x 4mm × 0.55mm UTQFN surface mount package.

Hitachi DSA00281

Abstract: HM6216514I Series
Contextual Info: HM6216514I Series Wide Temperature Range Version 8 M SRAM 512-kword x 16-bit ADE-203-1303A (Z) Preliminary Rev. 0.1 Feb. 25, 2002 Description The Hitachi HM6216514I Series is 8-Mbit static RAM organized 524,288-word × 16-bit. HM6216514I Series has realized higher density, higher performance and low power consumption by employing CMOS

ADE-203-1303A

Abstract: HM6216514LTTI-5SL HM6216514LTTI-5 Hitachi DSAUTAZ006 HM6216514I Series
Contextual Info: HM6216514I Series Wide Temperature Range Version 8 M SRAM 512-kword x 16-bit ADE-203-1303A (Z) Preliminary Rev. 0.1 Feb. 25, 2002 Description The Hitachi HM6216514I Series is 8-Mbit static RAM organized 524,288-word × 16-bit. HM6216514I Series has realized higher density, higher performance and low power consumption by employing CMOS

SSOP30

Abstract: TA1303AFN X-TAL reference
Contextual Info: TO SHIBA TENTATIVE 1303AFN TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T A 1303AF N M IXER/O SCILLATO R BUILT-IN FREQUENCY SYNTHESIZER FOR VHF# CATV AND UHF BAND. The 1303AFN is a single chip which integrates a PLL and a MIX-OSC for VHF, CATV and UHF band.

Contextual Info: TO SHIBA TH 50VSF1302/1303AAXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRA M AN D FLASH M E M O R Y M IXED MULTI-CHIP PACKAGE DESCRIPTION T he T H 50V SF 1302/1303A A X B is a m ix ed c o n ta in in g a p ack ag e 2,0 0 7 ,1 6 2 -b it SRAM a n d a 8,388,608-

Contextual Info: TO SH IBA TH50VSF1302/1303AAXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SR A M A N D FLASH M E M O R Y M IXED MULTI CHIP PACKAGE DESCRIPTION The TH50VSF1302/1303AAXB is a package of mixed 2,097,152-bit SRAM and 8,388,608-bit FLASH

DT35-1301AT

Abstract: DT35-1302AT DT35-1303AT DT35-1304AT
Contextual Info: Telecommunication COMMON MODE CHOKE Transformers DT35-1301AT DT35-1302AT DT35-1303AT DT35-1304AT A DT35-XXXXXX DELTAXXXX 3 6 B 1 2 5 N1 PRI 5 N3 1 3 SEC 6 N2 2 C 1 XXXX : DATE CODE WHITE DOT ON PIN1 D D 0.5(REF) 0.8x0.3(REF) PIN 4 CUT OFF DIMENSIONS IN mm

toshiba flash

Contextual Info: TOSHIBA TH50VSF1302/1303ACXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH M EM O RY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF1302/1303ACXB is a mixed containing a package 2,097,152-bit SRAM and a 8,388,608bit flash memory. The SRAM is organized as 262,144 words by 8 bits and the flash memory is

M/LOCTITE 0222

Contextual Info: T O S H IB A TH 50VSF1302/1303AAXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH M EM O RY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH60VSF1302/1303AAXB ia a mixed containing a packagc 2,097,162-bit SRAM and a 8,388,608-

1RFZ44N

Abstract: 1RFZ44 3s4 MARKING CODE DIODE MOSFET IRFZ44N for 1rfz44n IRFZ44N of irfz44n IRF1010 jj37
Contextual Info: PD -9 . 1303A International S Rectifier IRFZ44N HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175 °C Operating Temperature Fast Switching Fully Avalanche Rated Voss = 55V RoS on = 0 .024 Q lD = Description 41A

ut 803A

Abstract: b 803a 803A cr31-803a CR27-1203RCA CR31-1103AA CR2810 CR51-303A 2n20 CR51-403A
Contextual Info: MEDIUM POWER THYRISTORS — 32 to 70A h- AV B6'C . >TSM |2 t 32 A 500 A 1250 A2sec Outline 2 Type No. d v /d t = 2 0 V /|jS d v /d t= 2 0 0 V /p S V RRM CR27-903RC CR27 -1003RC CR27-1103RC CR27 1203RC CR27 -1303RC CR27-1403RC CR27 1503RC 800 900 1000 1100

1HT251

Abstract: 2T203 kt117 1T308 2T355A 2T312 IT308B K1HT251 kt117b 2T313
Contextual Info: WmmËÊÊm W h A iW f W * i r*ïS >*••> ro s ît. ;<W«a 7 mm m$m 15ÎÏ3 Sktófefc?¿feS 11181 immm SI f ' ■ ' ' ' : m S ËÊB B S M M CnPABOHHMK nonynpoBQQHHKOBbiE nPHBOPbl TPAH3MCTOPbl MAflOI/ì MOLUHOCTM n O f l PEA A K L4H EPÌ A . B rO flO M E A O B A

Contextual Info: OMNITM Low Voltage Passive Infrared Ceiling Sensor TITLE 24 LOW COMPLIANT CALIFORNIA CEILING MOUNT OCCUPANCY SENSORS 24 PROJECT INFORMATION Project Name VDC VOLTAGE Catalog No. Date The OMNIIR uses passive infrared PIR technology to turn lighting on and off

Contextual Info: D M T M L If iiiU M ii Final Electrical Specifications u f LT1308A/LT1308B m TECHNOLOGY High C urrent, M ic ro p o w e r Single C ell, 600kHz D C /D C C onverters A u g u st 1999 FCRTURCS DCSCRIPTIOn • 5V at 1A from a Single Li-Ion Cell ■ 5V at 800mA in SEPIC Mode from Four NiCd Cells

KS-20472

Abstract: UPS repairing KS-5499 acid hydrometer KS-20760 KS-5549 ks2152 KS5549 hr 433C KS20472
Contextual Info: Round Cell Batteries KS-20472 Product Manual Select Code 157-629-700 Comcode 107852477 Issue 8 January 2008 Product Manual Select Code 157-629-700 Comcode 107852477 Issue 8 January 2008 Round Cell Batteries KS-20472 Notice: The information, specifications, and procedures in this manual are

KC156A

Abstract: ky202e K174XA2 KT809A KT805A KT610B KP350A KT808a KT920A KC213
Contextual Info: BJOJIABPHHEHKO CnPABOMHMK n o n o jiy nPOBOAHMKOBBIM nPMBOPAM H 3A aH ne 1 0 -e, nepepaöoT aH H oe KHEB «TEXHIKA* h flo n o jiH e H H o e 32.852 h2 J113 JlaBpnMenKO B. 10. J113 CnpaBOMHHK no noJiynpoBOAHHKOBbiM npnöopaM. 10-e m a., nepepaô. h A on.— K.: TexHiKa, 1984.— 424 c., hji.— BHÓjniorp.: