130A Search Results

Contextual Info: TOSHIBA GT2QG102 SM TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N-CHANNEL IGBT GT20G102(S M) STROBE FLASH APPLICATIONS U nit in mm • High Input Impedance « Low Saturation Voltage : V q e (sa t) = 8V (Max.) (l£ = 130A) • Enhancement-Mode •

Contextual Info: TOSHIBA GT20G102 TOSHIBA INSULATED GATE BIPO LAR TRANSISTOR SILICON N -CH ANNEL IGBT G T 2 0 G 1 02 U nit in mm STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : V c E say = 8V (Max. (Ic = 130A) Enhancement-M ode 12V Gate Drive

Contextual Info: TOSHIBA GT10G101 T O SH IB A IN SU LA T E D GATE BIPO LA R T R A N SIST O R SILICO N N -C H A N N E L IGBT G T 1 0 G 1 01 Unit in mm STRO BE FLASH A P PL IC A T IO N S • • • • High Input Impedance Low Saturation Voltage : VcE sat = 8V (Max.) (Iq = 130A)

5G103

Contextual Info: TOSHIBA TENTATIVE GT5G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T 5 G 103 U nit in mm STROBE FLASH APPLICATIONS • • • • • 3rd Generation H igh Input Impedance Low Saturation Voltage ; V cE sat =8 V (M ax-) dC = 130A)

GT8G101

Abstract: 072G
Contextual Info: SILICON N CH ANN EL M O S T Y P E GT8G101 Unit in ram ST R O B E FLASH A P P L IC A T IO N S • • • Enhancement-Mode Low Saturation Voltage : V cE sat = 8V (Max.) (@Ic = 130A) 4.3V Gate Drive Collector Gate |fJ 3.0 m. Emitter > 0.75 M A X I M U M R A T IN G S (Ta = 25°C)

V23132-A2001-A200

Abstract: V23132-B2002-B200 V23132-A2001-B200 V23132-E2001-A200 v23132-b2002-a200 Tyco MCP 6.3 1393315-9 Power cable 25mm2 V2313 tyco mcp application
Contextual Info: Automotive Relays High Current Devices High Current Relay 150 n Limiting continuous current 130A at 85°C switching ability up to 300A n Suitable for voltage levels up to 24VDC n Heat, moisture and vibration resistant n Minimal contact resistance n Dustproof and sealed versions

Rectifiers

Abstract: MIMMD130S160DK
Contextual Info: MIMMD130S160DK 1600V 130A Rectifier Diode Module RoHS Compliant PRODUCT FEATURES • · · · · · Glass Passivated Chip Aluminum Oxide Ceramic Isolated Metal Baseplate Low Reverse Recovery Loss Low Forward Voltage High Surge Current Capability Low Inductance Package

Contextual Info: Advanced Technical Information ITRMS = 200A ITAVM = 130A VRRM = 800-1800 V Thyristor Modules ECO-PAC 2 ACE-1 VRSM VRRM VDSM V VDRM V Typ 900 1300 1500 1700 1900 800 1200 1400 1600 1800 VCO VCO VCO VCO VCO Symbol E-3 132 132 132 132 132 - 08io7 12io7 14io7

PFT1303N

Abstract: PFT1306N
Contextual Info: THYRISTOR 130A Avg 300~600 Volts •回路図 CIRCUIT 1 G1 2 K1 PFT1303N PFT1306N ■外形寸法図 OUTLINE DRAWING 3 K2 K3 （単位 Dimension：mm） G2 G3 φ φ ■最大定格 Maximum Ratings 項 目 Parameter くり返しピークオフ電圧

GT10G102

Abstract: gt106
Contextual Info: SILICON N CHANNEL MOS TYPE GT10G102 STROBE FLASH APPLICATIONS Unit in mm 10±0.3 . High Input Impedance 0 3.2 ±0.2 2.7 ±0.2 . Low Saturation Voltage : VcE sat = 8V(Max.)(IC“ 130A) . Enhancement-Mode . 12V Gate Drive MAXIMUM RATINGS (Ta=25°C) SYMBOL CHARACTERISTIC

GT20G101

Contextual Info: GT20G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT20G101(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 130A) Enhancement−Mode 20V Gate Drive MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: TOSHIBA GT20G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 2 0 G 1 01 Unit in mm STROBE FLASH APPLICATIONS • • • • 10.3 MAX High Input Impedance Low Saturation Voltage : V0g s a t ~ 8 V (Max.) (Iq = 130A) Enhancement-Mode

Contextual Info: Preliminary SGR15N40L / SGU15N40L N-CHANNEL IGBT FEATURES * High Input Impedance * High Peak Current Capability 130A * Easy Gate Drive APPLICATIONS *Strobe Flash ABSOLUTE MAXIMUM RATINGS Rating Units Collector-Emitter Voltage 450 V Gate-Emitter Voltage ±6

Contextual Info: GT20G101 SM T O S H IB A GT 2 0 G1 01 ( SM) TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : V0g (s a t)~ 8 V (Max.) (Iq = 130A) Enhancement-Mode 20V Gate Drive

Contextual Info: MSFC130 Thyristor/Diode Modules 800 to 1600V 130Amp VRRM / VDRM IFAV / ITAV Applications y y y y Circuit Power Converters Lighting Control DC Motor Control and Drives Heat and temperature control Features y y y y y y International standard package High Surge Capability

2PG402

Contextual Info: IGBTs 2PG402 Insulated Gate Bipolar Transistor • Features unit: mm ● High breakdown voltage: VCES = 400V ● Allowing to control large current: IC peak = 130A ● Housed in the surface mounting package 2.5±0.1 2.5±0.1 6.5±0.1 5.3±0.1 4.35±0.1 3.0±0.1

AP28G45GEM

Contextual Info: AP28G45GEM Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Input Impedance ▼ High Pick Current Capability C ▼ 3.3V Gate Drive ▼ Strobe Flash Applications VCE 450V ICP 130A C C C C G G E SO-8

MB89130A

Abstract: MB89131
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS07-12510-9E 8-bit Proprietary Microcontroller CMOS F2MC-8L MB89130/130A Series MB89131/P131/133A/P133A/135A/ MB89P135A/130A • DESCRIPTION The MB89130/130A series has been developed as a general-purpose version of the F2MC*-8L family consisting

E80276

Contextual Info: = £ ¥ * { * <+m y TM130RZ/EZ/GZ-M,-H TM130RZ/EZ/GZ-M ,-H • lT AV 130A • If ( av ) ¥ £ jM 3 ï;)? ï.130A • V rrm t ' - Î 7 ^ Î I L ^ Œ . 4 0 0 /800V 4oo/soo v • v d rm • >£-£^301/7- A

dpsn-130ab

Abstract: Delta Electronics dpsN 130AB A Delta Electronics dpsN 130AB B dpsn-130ab b 130-watt Delta Electronics dpsn-130ab DPSN-130ab A Delta Electronics dpsN Delta Electronics dpsN 130AB dpsN
Contextual Info: w w w. d e l t a w w. c o m DPSN-130AB A Series FEATURES Efficiency: Universal input Protection: 5.75 L x 3.36 (W) x 1.96 (H) in 3 Harmonic: Power Density: MECHANICAL DRAWING >70%@max load, nom. line Latched mode OVP, OCP, & OTP EN61000-3-2 class D 3.43 W/in 3

Contextual Info: 2PG302 IGBTs 2PG302 ForInsulatedGateBipolarTransistor Unit : mm • Features 3.5±0.2 7.0±0.3 ● High breakdown voltage : VCES= 400V ● Large current control possible : IC peak =130A ● Housing in the surface mounting package possible M Di ain sc te on na

Contextual Info: T H Y R IS T O R M O D U L E n o n -is o l a t e d type 130A P W B 1 3 0 A is a Thyristor module suitable for low voltage, 3 phase recifier applications. • • • • It(*v>: 130A (each device) High Surge Current 3500 A (50/60Hz) Easy Construction

Contextual Info: MITEL DK13.FX Fast Switching Thyristor SEMICONDUCTOR Supersedes January 1996 version, D S4411 - 1.0 D S4411 -1 .1 KEY PARAMETERS 1200V DRM APPLICATIONS • High Power Inverters And Choppers. ■ UPS. March 1998 130A ^T RMS 1600A 200V/|iS 500A/(iS 15(iS

E80276

Abstract: Thyristor 1600V
Contextual Info: MITSUBISHI THYRISTOR MODULES TM130RZ/EZ/GZ-24,-2H HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE TM130RZ/EZ/GZ-24,-2H • IT AV • IF (AV) • VRRM • • • • Average on-state current . 130A Average forward current . 130A Repetitive peak reverse voltage