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    130A Search Results

    130A Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    UPA2766T1A-E2-AY Renesas Electronics Corporation Nch Single Power Mosfet 30V 130A 0.88Mohm 8Pin HVSON (6051) Visit Renesas Electronics Corporation
    UPA2764T1A-E2-AY Renesas Electronics Corporation Nch Single Power Mosfet 30V 130A 1.10Mohm 8Pin HVSON (6051) Visit Renesas Electronics Corporation
    CA3130AT/B Rochester Electronics LLC Replacement for Harris part number CA3130AT. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    CA3130AT Rochester Electronics LLC Operational Amplifier, 1 Func, 5000uV Offset-Max, BIMOS, MBCY8, PACKAGE-8 Visit Rochester Electronics LLC Buy
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    130A Price and Stock

    MOSLEADER SMCJ130A-TR7-ML

    SMC(DO-214AB) Commercial Grade
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SMCJ130A-TR7-ML Reel 30,000 200
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    • 1000 $0.075
    • 10000 $0.0525
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    TDK Corporation C3216JB2J153M130AA

    CAP CER 0.015UF 630V JB 1206
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey C3216JB2J153M130AA Reel 4,000 2,000
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    • 10000 $0.07241
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    C3216JB2J153M130AA Cut Tape 1,500 1
    • 1 $0.34
    • 10 $0.223
    • 100 $0.1264
    • 1000 $0.08219
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    Vishay Semiconductors SMBJ130A-E3/5B

    TVS DIODE 130VWM 209VC DO214AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SMBJ130A-E3/5B Reel 3,200 3,200
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    SMBJ130A-E3/5B Cut Tape 730 1
    • 1 $0.47
    • 10 $0.336
    • 100 $0.1693
    • 1000 $0.11676
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    Eaton Bussmann SMBJE130A

    TVS DIODE 130VWM 209VC SMB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SMBJE130A Reel 3,000 3,000
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    SMBJE130A Cut Tape 2,986 1
    • 1 $0.5
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    • 100 $0.1965
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    Sager SMBJE130A 3,000
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    Analog Devices Inc ADR130AUJZ-REEL7

    IC VREF SERIES 0.7% TSOT6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ADR130AUJZ-REEL7 Reel 3,000 3,000
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    Analog Devices Inc ADR130AUJZ-REEL7 9,000 3,000
    • 1 $4.31
    • 10 $2.851
    • 100 $2.0449
    • 1000 $1.60624
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    Bristol Electronics ADR130AUJZ-REEL7 152
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    Win Source Electronics ADR130AUJZ-REEL7 27,100
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    • 1000 $1.884
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    Find more 130A price and stock on Findchips.com

    130A Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    130A Essentra Components TAPERED CAP - OD RANGE: 274.1 - Original PDF
    130-A Wakefield-Vette Fans, Thermal Management - Thermal - Accessories - PRECISION CLAMP Original PDF
    130A10-29-I-B1 METZ CONNECT USA RJ45 CAT 6 UTP MODULE Original PDF
    130A5011 Bomar Interconnect Products Coaxial Connectors (RF) - Adapters, Connectors, Interconnects, CONN ADAPT PLUG-PLUG N Original PDF

    130A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    V23132-A2001-A200

    Abstract: V23132-B2002-B200 V23132-A2001-B200 V23132-E2001-A200 v23132-b2002-a200 Tyco MCP 6.3 1393315-9 Power cable 25mm2 V2313 tyco mcp application
    Text: Automotive Relays High Current Devices High Current Relay 150 n Limiting continuous current 130A at 85°C switching ability up to 300A n Suitable for voltage levels up to 24VDC n Heat, moisture and vibration resistant n Minimal contact resistance n Dustproof and sealed versions


    Original     		PDF 24VDC 12VDC/24VDC 25mm2 16mm2 12VDC 12VDC V23132-A2001-A200 V23132-B2002-B200 V23132-A2001-B200 V23132-E2001-A200 v23132-b2002-a200 Tyco MCP 6.3 1393315-9 Power cable 25mm2 V2313 tyco mcp application

    Rectifiers

    Abstract: MIMMD130S160DK
    Text: MIMMD130S160DK 1600V 130A Rectifier Diode Module RoHS Compliant PRODUCT FEATURES • · · · · · Glass Passivated Chip Aluminum Oxide Ceramic Isolated Metal Baseplate Low Reverse Recovery Loss Low Forward Voltage High Surge Current Capability Low Inductance Package


    Original     		PDF MIMMD130S160DK Rectifiers MIMMD130S160DK

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information ITRMS = 200A ITAVM = 130A VRRM = 800-1800 V Thyristor Modules ECO-PAC 2 ACE-1 VRSM VRRM VDSM V VDRM V Typ 900 1300 1500 1700 1900 800 1200 1400 1600 1800 VCO VCO VCO VCO VCO Symbol E-3 132 132 132 132 132 - 08io7 12io7 14io7


    Original     		PDF 08io7 12io7 14io7 16io7 18io7 SVX-18

    PFT1303N

    Abstract: PFT1306N
    Text: THYRISTOR 130A Avg 300~600 Volts •回路図 CIRCUIT 1 G1 2 K1 PFT1303N PFT1306N ■外形寸法図 OUTLINE DRAWING 3 K2 K3 （単位 Dimension：mm） G2 G3 φ φ ■最大定格 Maximum Ratings 項 目 Parameter くり返しピークオフ電圧


    Original     		PDF PFT1303N PFT1306N PFT1303N 150VRM 25ITM 150VDM 125VD PFT1306N

    GT20G101

    Abstract: No abstract text available
    Text: GT20G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT20G101(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 130A) Enhancement−Mode 20V Gate Drive MAXIMUM RATINGS (Ta = 25°C)


    Original     		PDF GT20G101 2-10S2C

    Untitled

    Abstract: No abstract text available
    Text: MSFC130 Thyristor/Diode Modules 800 to 1600V 130Amp VRRM / VDRM IFAV / ITAV Applications y y y y Circuit Power Converters Lighting Control DC Motor Control and Drives Heat and temperature control Features y y y y y y International standard package High Surge Capability


    Original     		PDF MSFC130 130Amp E243882 MSFC130-08 MSFC130-12 MSFC130-16 VGD125â

    2PG402

    Abstract: No abstract text available
    Text: IGBTs 2PG402 Insulated Gate Bipolar Transistor • Features unit: mm ● High breakdown voltage: VCES = 400V ● Allowing to control large current: IC peak = 130A ● Housed in the surface mounting package 2.5±0.1 2.5±0.1 6.5±0.1 5.3±0.1 4.35±0.1 3.0±0.1


    Original     		PDF 2PG402 2PG402

    AP28G45GEM

    Abstract: No abstract text available
    Text: AP28G45GEM Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Input Impedance ▼ High Pick Current Capability C ▼ 3.3V Gate Drive ▼ Strobe Flash Applications VCE 450V ICP 130A C C C C G G E SO-8


    Original     		PDF AP28G45GEM AP28G45GEM

    MB89130A

    Abstract: MB89131
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS07-12510-9E 8-bit Proprietary Microcontroller CMOS F2MC-8L MB89130/130A Series MB89131/P131/133A/P133A/135A/ MB89P135A/130A • DESCRIPTION The MB89130/130A series has been developed as a general-purpose version of the F2MC*-8L family consisting


    Original     		PDF DS07-12510-9E MB89130/130A MB89131/P131/133A/P133A/135A/ MB89P135A/PV130A MB89130A MB89131

    dpsn-130ab

    Abstract: Delta Electronics dpsN 130AB A Delta Electronics dpsN 130AB B dpsn-130ab b 130-watt Delta Electronics dpsn-130ab DPSN-130ab A Delta Electronics dpsN Delta Electronics dpsN 130AB dpsN
    Text: w w w. d e l t a w w. c o m DPSN-130AB A Series FEATURES Efficiency: Universal input Protection: 5.75 L x 3.36 (W) x 1.96 (H) in 3 Harmonic: Power Density: MECHANICAL DRAWING >70%@max load, nom. line Latched mode OVP, OCP, & OTP EN61000-3-2 class D 3.43 W/in 3


    Original     		PDF DPSN-130AB EN61000-3-2 IEC61000-4-5, IEC61000-4-2, 130Watt Delta Electronics dpsN 130AB A Delta Electronics dpsN 130AB B dpsn-130ab b 130-watt Delta Electronics dpsn-130ab DPSN-130ab A Delta Electronics dpsN Delta Electronics dpsN 130AB dpsN

    Untitled

    Abstract: No abstract text available
    Text: 2PG302 IGBTs 2PG302 ForInsulatedGateBipolarTransistor Unit : mm • Features 3.5±0.2 7.0±0.3 ● High breakdown voltage : VCES= 400V ● Large current control possible : IC peak =130A ● Housing in the surface mounting package possible M Di ain sc te on na


    Original     		PDF 2PG302

    E80276

    Abstract: Thyristor 1600V
    Text: MITSUBISHI THYRISTOR MODULES TM130RZ/EZ/GZ-24,-2H HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE TM130RZ/EZ/GZ-24,-2H • IT AV • IF (AV) • VRRM • • • • Average on-state current . 130A Average forward current . 130A Repetitive peak reverse voltage


    Original     		PDF TM130RZ/EZ/GZ-24 1200/1600V E80276 E80271 E80276 Thyristor 1600V

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT2QG102 SM TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N-CHANNEL IGBT GT20G102(S M) STROBE FLASH APPLICATIONS U nit in mm • High Input Impedance « Low Saturation Voltage : V q e (sa t) = 8V (Max.) (l£ = 130A) • Enhancement-Mode •


    OCR Scan     		PDF GT2QG102 GT20G102 2-10S2C

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT20G102 TOSHIBA INSULATED GATE BIPO LAR TRANSISTOR SILICON N -CH ANNEL IGBT G T 2 0 G 1 02 U nit in mm STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : V c E say = 8V (Max. (Ic = 130A) Enhancement-M ode 12V Gate Drive


    OCR Scan     		PDF GT20G102

    5G103

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE GT5G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T 5 G 103 U nit in mm STROBE FLASH APPLICATIONS • • • • • 3rd Generation H igh Input Impedance Low Saturation Voltage ; V cE sat =8 V (M ax-) dC = 130A)


    OCR Scan     		PDF GT5G103 5G103

    GT8G101

    Abstract: 072G
    Text: SILICON N CH ANN EL M O S T Y P E GT8G101 Unit in ram ST R O B E FLASH A P P L IC A T IO N S • • • Enhancement-Mode Low Saturation Voltage : V cE sat = 8V (Max.) (@Ic = 130A) 4.3V Gate Drive Collector Gate |fJ 3.0 m. Emitter > 0.75 M A X I M U M R A T IN G S (Ta = 25°C)


    OCR Scan     		PDF GT8G101 100ns GT8G101 072G

    GT10G102

    Abstract: gt106
    Text: SILICON N CHANNEL MOS TYPE GT10G102 STROBE FLASH APPLICATIONS Unit in mm 10±0.3 . High Input Impedance 0 3.2 ±0.2 2.7 ±0.2 . Low Saturation Voltage : VcE sat = 8V(Max.)(IC“ 130A) . Enhancement-Mode . 12V Gate Drive MAXIMUM RATINGS (Ta=25°C) SYMBOL CHARACTERISTIC


    OCR Scan     		PDF GT10G102 GT10G102 gt106

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT20G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 2 0 G 1 01 Unit in mm STROBE FLASH APPLICATIONS • • • • 10.3 MAX High Input Impedance Low Saturation Voltage : V0g s a t ~ 8 V (Max.) (Iq = 130A) Enhancement-Mode


    OCR Scan     		PDF GT20G101 TcS70Â

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SGR15N40L / SGU15N40L N-CHANNEL IGBT FEATURES * High Input Impedance * High Peak Current Capability 130A * Easy Gate Drive APPLICATIONS *Strobe Flash ABSOLUTE MAXIMUM RATINGS Rating Units Collector-Emitter Voltage 450 V Gate-Emitter Voltage ±6


    OCR Scan     		PDF SGR15N40L SGU15N40L

    Untitled

    Abstract: No abstract text available
    Text: GT20G101 SM T O S H IB A GT 2 0 G1 01 ( SM) TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : V0g (s a t)~ 8 V (Max.) (Iq = 130A) Enhancement-Mode 20V Gate Drive


    OCR Scan     		PDF GT20G101

    Untitled

    Abstract: No abstract text available
    Text: APT30M19JVFR A dvanced P o w er Te c h n o l o g y 300V POWER MOSV 130A 0.019CÌ iFREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF APT30M19JVFR OT-227 E145592

    E80276

    Abstract: No abstract text available
    Text: = £ ¥ * { * <+m y TM130RZ/EZ/GZ-M,-H TM130RZ/EZ/GZ-M ,-H • lT AV 130A • If ( av ) ¥ £ jM 3 ï;)? ï.130A • V rrm t ' - Î 7 ^ Î I L ^ Œ . 4 0 0 /800V 4oo/soo v • v d rm • >£-£^301/7- A


    OCR Scan     		PDF TM130RZ/EZ/GZ-M TM130RZ/EZ/GZ-M 400/800V E80276 E80271 E80276

    Untitled

    Abstract: No abstract text available
    Text: T H Y R IS T O R M O D U L E n o n -is o l a t e d type 130A P W B 1 3 0 A is a Thyristor module suitable for low voltage, 3 phase recifier applications. • • • • It(*v>: 130A (each device) High Surge Current 3500 A (50/60Hz) Easy Construction


    OCR Scan     		PDF PWB130A 50/60Hz) PWB130A20 PWB130A30 PWB130A40 B130A

    Untitled

    Abstract: No abstract text available
    Text: MITEL DK13.FX Fast Switching Thyristor SEMICONDUCTOR Supersedes January 1996 version, D S4411 - 1.0 D S4411 -1 .1 KEY PARAMETERS 1200V DRM APPLICATIONS • High Power Inverters And Choppers. ■ UPS. March 1998 130A ^T RMS 1600A 200V/|iS 500A/(iS 15(iS


    OCR Scan     		PDF S4411 20kHz. 12FXM.