131- 6 WJ 67 Search Results

62792

Abstract: 300/SCR 131- 6 WJ 66
Contextual Info: uuU RA66 / SMRA66 10 to 1000 MHz TO-8B1 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN - THREE STAGES: 37.0 dB TYP. LOW NOISE: <3.5 dB (TYP.) MEDIUM OUTPUT LEVEL: > +15.5 dBm (TYP.) HIGH REVERSE ISOLATION: >50 dB (TYP) Outline Drawings

bc 2878 transistor

Abstract: WJ A38 WJ-PA38 transistor BC 157 transistor K 2937 bc 2878 transistor bc 146
Contextual Info: uuU PA38-2/ SMPA38-2 200 to 2600 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT WIDE BANDWIDTH: 200-2800 MHz TYP. HIGH OUTPUT LEVEL: +23.5 dBm (TYP.) GaAs FET AMPLIFIER HIGH THIRD ORDER INTERCEPT POINT: +33 dBm (TYP.) Outline Drawings

WJ-A78

Contextual Info: uuU A78 / SMA78 5 to 300 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH DYNAMIC RANGE: +114 dB/1 MHz HIGH OUTPUT: +19.0 dBm TYR HIGH THIRD ORDER IP: +35 dBm (TYR) LOW NOISE FIGURE: 3.5 dB (TYR) IB Outline Drawings A78 Specifications*

J 6920

Abstract: J 6920 FET 188 053
Contextual Info: uuU PA48 / SMPA48 1.0 TO 4.0 GHz TO-8B2 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT ULTRAWIDE BANDWIDTH: 0.8-4.2 GHz TYR HIGH OUTPUT LEVEL: +24.0 dBm (TYP.) HIGH GAIN: 16.0 dB (TYR) GaAs FET AMPLIFIER Outline Drawings PA48 Specifications’1

wj-CA36-1

Abstract: WJ-A36 131- 6 WJ 67
Contextual Info: uuU A36-1 / SMA36-1 100 to 2300 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN - TWO STAGES: 16.2 dB TYP. LOW VSWR: <1.6:1 (TYP.) MEDIUM OUTPUT LEVEL: +12.0 dBm (TYP.) Outline Drawings A36-1 0 200 (5.06} Specifications*

Contextual Info: L u ti A57/SMA57 10 to 500 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ MEDIUM OUTPUT LEVEL: +14 dBm TYP. ♦ HIGH THIRD ORDER I.P.: +28.0 dBm (TYP.) T< SPlfSSlfii Outline Drawings A 57 Specifications* Characteristics Typical 0° to 50 °C

WJ-CA37

Abstract: bc 162 transistor WJ-A37
Contextual Info: uuU A37 / SMA37 10 to 2000 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT LEVEL: +15 dBm TYP. HIGH THIRD ORDER I.P.: +28 dBm (TYP.) WIDE POWER SUPPLY RANGE: +5 TO +15 VOLTS Outline Drawings A 37 Specifications* 0 200

Contextual Info: ECG004 The Communications Edge TM InGaP HBT Gain Block Product Features Product Description Functional Diagram GND • DC – 6 GHz • +13.5 dBm P1dB at 1 GHz • +28 dBm OIP3 at 1 GHz • 16.2 dB Gain at 1 GHz • 3.2 dB Noise Figure at 2 GHz • Available in SOT-363, SOT-86,

pj 989

Abstract: P4H1 232A2 6412a 1YZ85
Contextual Info: %:8H1<1@6:B&I646&+3884J&!87K&L I898<M8:&$NN" !"#$%&' "#$*+,-)./&012345678&!898178: 5143&;<=:>78?&+8@A141714B&CD"E&?F<G O864P:8A • !"#$%&'('%)'(*%+','-"."(/0%1234%5-"(676 ■ 89:%,$;(;&*(*+(;) ■ ■ ■ ■ @&

MMIC marking CODE l sot 86

Contextual Info: ECG004 The Communications Edge TM InGaP HBT Gain Block Product Features Product Description Functional Diagram GND • DC – 6 GHz • +13.5 dBm P1dB at 1 GHz • +28 dBm OIP3 at 1 GHz • 16.2 dB Gain at 1 GHz • 3.2 dB Noise Figure at 2 GHz • Available in SOT-363, SOT-86,

transistor BC 339

Abstract: wj-a87
Contextual Info: uuJ A87-2 / SMA87-2 10 to 300 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT LOW NOISE FIGURE: 3.0 dB TYR HIGH EFFIEIENCY: 15 mA@ +5 Vdc (TYR) HIGH OUTPUT POWER AT 5 VOLTS: +11 dBm (TYP.) ♦ LOW VSWR: <1.5.1 (TYR) Outline Drawings

ECG004C

Contextual Info: ECG004 The Communications Edge TM Product Information InGaP HBT Gain Block Product Features x DC – 6 GHz Product Description x +28 dBm OIP3 at 1 GHz x 16.2 dB Gain at 1 GHz The ECG004 consists of Darlington pair amplifiers using the high reliability InGaP/GaAs HBT process technology

WJ-A18-1

Contextual Info: uuü A181/SMA181 10 to 500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH REVERSE ISOLATION: 22 dB TYR HIGH OUTPUT POWER: +22 dBm (TYP.) HIGH THIRD ORDER I.P.: +35 dBm (TYP.) Specifications’* Characteristics Frequency (Min.)

ECG004B-G

Contextual Info: ECG004 The Communications Edge TM InGaP HBT Gain Block Product Features Product Description • +13.5 dBm P1dB at 1 GHz • +28 dBm OIP3 at 1 GHz • 16.2 dB Gain at 1 GHz • 3.2 dB Noise Figure at 2 GHz • Lead-free / green SOT-89 pkg • Internally matched to 50 Ω

transistor BC 157

Abstract: WJ-A34 wj a34
Contextual Info: u j U A34/SMA34 100 to 2000 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH GAIN - TWO STAGES: 16 dB TYP. ♦ ULTRALOW PHASE DEVIATION FROM LINEARITY: < ±3° ; 500-2000 MHz ♦ LOW VSWR: <1.5:1 (TYP.) ♦ MEDIUM LEVEL OUTPUT: +7 dBm (TYP.)

Operational amplifier 10358

Abstract: MMIC "SOT 89" marking 12 86 ECG004 MMIC marking CODE l sot 86 ECG004B
Contextual Info: ECG004 The Communications Edge TM Product Information InGaP HBT Gain Block Product Features x DC – 6 GHz x +13.5 dBm P1dB at 1 GHz x +28 dBm OIP3 at 1 GHz x 16.2 dB Gain at 1 GHz x 3.2 dB Noise Figure at 2 GHz x Available in SOT-363, SOT-86, SOT-89 and lead-free / green

marking 25 mmic sot-89

Abstract: E004G
Contextual Info: ECG004 The Communications Edge TM InGaP HBT Gain Block Product Features Product Description Functional Diagram GND • DC – 6 GHz • +13.5 dBm P1dB at 1 GHz • +28 dBm OIP3 at 1 GHz • 16.2 dB Gain at 1 GHz • 3.2 dB Noise Figure at 2 GHz • Available in SOT-363, SOT-86,

WT11M

Abstract: TV8-516R T10-14R T10-10R TV14-38R TV14-8R TV18-6R TV18-516R TV18-14R T14-6R
Contextual Info: T&B Crimp Terminals Overview T&B Crimp Terminals and Splices T&B Crimp Terminals and Splices are designed specifically for inexpensive insulated and non-insulated electrical terminations. This terminal product group is perfect for most commercial applications. T&B

transistor BC 157

Abstract: 13000 transistor TO-220
Contextual Info: u u U A66 / SMA66 10 to 1200 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN -TWO STAGES: 23.5 dB TYP. LOW NOISE: <3.8 dB (TYP.) HIGH OUTPUT LEVEL: +15.0 dBm (TYP.) WIDE POWER SUPPLY RANGE: 5 TO 15 VOLTS Outline Drawings

LM331

Abstract: LM331 f to v converter LM131 1Hz-100kHz LM231 LM131A LM331AH aeks LM331A H06C
Contextual Info: — 400 — LM131/A, LM231/A, LM331/A T + D Î , A Î S Œ * A Î ) 'B f E I C j : t « t 5 V -.F 3 ? -c, 7 ) M i r - ;u j g ¡ 6 * f c |i , 1H z Â>ü 1 0 0 k H z <7)*EH"CSâÆT è ?». tti tilt * — -7'S- 3 l / 7 ? I i i è S : i t t e ' ) , 3 T T L n.fäVU&Wj&tzl t 40V i f i O

TAJE107M025

Abstract: 3216 footprint IPC Ta2O5 phase diagram TLJG107M004 TPS 1028 CWR09 CWR11 CWR19 CWR29 TS16949
Contextual Info: www.avx.com AVX Tantalum and Niobium Oxide Capacitors Version 10.5 Contents SECTION 1: SURFACE MOUNT COMMERCIAL TANTALUM Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-3

HR5000

Abstract: U10-2 SMD CAPACITOR 1206 2.2Mf 16V smd code 12.00 Jn 1K100 NOJB107M006 FXXXX Plastic Mold CRYSTAL SMD TCJD106M050 CWR11
Contextual Info: www.avx.com AVX Tantalum and Niobium Oxide Capacitors Version 10.10 Contents SECTION 1: SURFACE MOUNT COMMERCIAL TANTALUM Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-3

kyocera 433 k

Abstract: avx smt catalogue 1 watt axial resistor k103 INFRARED laser 6y47 s7-200 TLCJ226M003 S2000A TACK334M016
Contextual Info: www.avx.com AVX Tantalum and Niobium Oxide Capacitors Version 12.6 Contents SECTION 1: SURFACE MOUNT COMMERCIAL TANTALUM Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-3

WT11M

Abstract: WT111 11823 die TV18-6LF T108L T188F T18-6F T18-10F T14-6F T14-8F
Contextual Info: T&B Crimp Terminals Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Catalog Numbering System . . . . . . . . . . 2 Ring Terminals Vinyl Insulated Ring Terminals . . . . . . . . 3 Non-Insulated Ring Terminals . . . . . . . . . 3 Fork Terminals