13107 Search Results

tr8c

Abstract: TMS28F200
Contextual Info: TMS28F20ÛBZT, TMS28F200BZB 262144 BY 8-BIT/131072 BY 16-BIT BOOT-BLOCK FLASH MEMORIES SWS2dOO - JUNE 1 9 9 4 - REVISED SEPTEMBER 1997 • ■ I I I • • • • • • • • • • Organization . . . 262144 by 8 bits 131072 by 16 bits Array-Blocking Architecture

581000P

Abstract: CXK581
Contextual Info: SONY» C X K 5 8 1 0 0 0 P / M -10L/12L/15L -10LL712LL/15LL 131072-word X 8-bit High Speed CMOS Static RAM Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this

Contextual Info: Ordering number : ENì% 5084 _ CMOS LSI _ LC322270J. M-80 2 MEG 131072 words x 16 bits DRAM Fast Page Mode, Byte Write Preliminary Overview Package Dimensions T he LC 322270J, M is a CM O S dynam ic RAM operating

data sw 3205

Contextual Info: Ordering number : EN JK4711 CMOS LSI LC338128P, M, PL, ML-7Q/8o7fÖ 1 MEG 131072 words x 8 bits Pseudo-SRAM Preliminary Overview Package Dimensions The LC338128 series is composed of pseudo static RAM that operate on a single 5 V power supply and is organized

Contextual Info: I Ordering number : EN%5085 _ CMOS LSI LC322271J, M-8Ò 2 MEG 131072 words x 16 bits DRAM Fast Page Mode, Byte Write Preliminary Overview Package Dimensions The LC322271J, M is a CMOS dynamic RAM operating on a single 5 V power source and having a 131072 words

DIP32

Abstract: LC371100SP SM-10 SANYO DL
Contextual Info: I Ordering number : ENÎ8 50B7A CMOS LSI No. 5K 5087A SAMYO LC371100SP, SM-10/LC37110OSP, SM-20LV 1 MEG 131072 wordsx 8 bits Mask ROM Internal Clocked Silicon Gate Preliminary Overview Package Dimensions The LC371100SP, SM-10 and LC371100SP, SM-20LV are 1048576-b it M ask Program m able Read Only

Contextual Info: TMS28F010B 131072 by 8-err FLASH MEMORY SMJS824B - MAY 1995 - REVISED AUGUST 1997 • • • • • • • • Organization . . . 131072 by 8 Bits Pin Compatible With Existing 1-Megabit EPROMs Vqc Tolerance ±10% All Inputs/Outputs TTL Compatible Maximum Access/Minimum Cycle Time

Contextual Info: H I T A C H I / L O G I C / A R R A Y S / N E f l E O E D • 4 4 ^ 2 0 3 0 0 l 4 7 b S HN27C301P/FP Series- T -W -13- I S 131072-word x 8-bit CMOS One Time Electrically Programmable ROM The HN27C301P Series are 131072-word x 8-bit one time electrically programmable ROM. Initially, all bits of the

Contextual Info: HM66204 S x 8-bit High Density CMOS Static RAM Module The HM66204 m odule was designed for pinout and signal compatibility with the HM628128 128K x 8 Monolithic Device. This device is now obsolete and no longer in manufacture.

27C301G

Contextual Info: HN27C301G Series 131072-word X 8-bit CMOS U .V . Erasable and Programmable ROM • FEA TU R ES • Single Power S u p p ly . + 5V ±5% • Fast H igh -R eliability Program Mode and Fast High- R eliability Page Program Mode

A13G

Abstract: CXK5T81000ATN CXK5T81000AYN 5 pin A13E power supply circuit 24v ac to 3.6v dc mcoe
Contextual Info: SONY | CXK5T81OOOATN/AYN - 1 0 L L X / 1 2 L L X 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK5T81 OOOATN/AYN is a high Preliminary speed CMOS static RAM organized as 131072-words by 8 -bits. Special feature are low power consumption and

9713

Abstract: W24L11 W24L11-70L W24L11-70LL W24L11Q-70LL W24L11S-70L W24L11S-70LL W24L11T-70L W24L11T-70LL
Contextual Info: Preliminary W24L11 128K x 8 CMOS STATIC RAM GENERAL DESCRIPTION The W24L11 is a normal-speed, very low-power CMOS static RAM organized as 131072 × 8 bits that operates on a wide voltage range from 3.0V to 3.6V power supply. This device is manufactured using

LE28C1001M

Abstract: LE28C1001T TSOP32
Contextual Info: Ordering number : EN*5129A CMOS LSI LE28C1001M, T-90/12/15 1MEG 131072 words x 8 bits Flash Memory Preliminary Overview Package Dimensions The LE28C1001M, T series ICs are 1 MEG flash memory products that feature a 131072-word × 8-bit organization and 5 V single-voltage power supply operation. CMOS

GR12883

Contextual Info: GR12883 Page 1 of 2 GR12883 DESCRIPTION The GR12883 is a 131072 word by 8 bits 128K x 8 non-volatile CMOS Static Ram, fabricated from advanced silicon gate CMOS technology and a high reliability lithium power cell.The power down circuit is fully automatic and is referenced at 4.5 volts. At this point the GR12883 is write protected by an internal

Contextual Info: HM62W8128 Seríes Product Preview 131072-Word x 8-Bit High Speed CMOS Static RAM Ordering Information Description Typ e No. A ccess tim e H M 62W 8128LP-10 100 ns H M 62W 8128LP-12 120 ns H M 62W 8128LP-1O L 100 ns H M 6 2W 81 28 LP-12 L 120 ns H M 62W 8128LP-1O SL

Contextual Info: HM62W8127H Series HM62W9127H Series 131072-word x 8/9-bit High Speed CMOS Static RAM HITACHI Rev. 0.0 Dec. 1, 1995 Description The HM62W8127H/HM62W9127H is an asynchronous 3.3 V operation high speed static RAM organized as 131,072-word 8/9-bit. It realize high speed access time 30/35/45 ns with employing 0.8 (Am CMOS

W24010-70LL

Abstract: W24010 W24010S-70LL W24010T-70LL W24010U-70LL W24010V-70LL
Contextual Info: W24010/LL 128K x 8 CMOS STATIC RAM GENERAL DESCRIPTION The W24010 is a normal-speed, very low-power CMOS static RAM organized as 131072 × 8 bits that operates on a single 5-volt power supply. This device is manufactured using Winbond's high performance CMOS technology.

Contextual Info: HM628127HB Series 131072-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-350C Z Rev. 3.0 Nov. 19, 1996 Description The HM628127HB is an asyncronous high speed static RAM organized as 128-k word x 8-bit. It realize high speed access time (15/20 ns) with employing 0.8 (Am shrink CMOS process and high speed circuit

628128

Contextual Info: A K M 628128 Series 131072-Word x 8-Bit High Speed CMOS Static RAM The A K M 628128 is a CMOS static RAM o rg anized 128- kword x 8-bit. It realizes higher density, higher p erfo rm ance and low p o w e r consum ption by em ploying 0 .8 |im H i-C M O S A K M 628128P Series

7483 truth table

Abstract: Truth Table 7483 truth table for 7483 ci 7483
Contextual Info: W24L010A íinbond Electronics Corp. 128K X 8 HIGH SPEED CMOS STATIC RAM GENERAL DESCRIPTION The W24L010A is a high speed, low power CMOS static RAM organized as 131072 x 8 bits that operates on a single 3.3-volt power supply. This device is manufactured using Winbond's high

Contextual Info: « 6 I B W Ê Î j f t W231024 Winbond 128K X 8 MASK ROM DESCRIPTION FEATURES The W231024 is a High Speed Mask-Programm­ • Power Consumption : able Read-Only Memory Active : 175mW Typ. Organized as 131072 X 8 Bits and Operates on a Single • Access Time : 200/300 ns (Max.)

Contextual Info: W24010A l’inbond Electronics Corp. 128K x 8 HIGH SPEED CMOS STATIC RAM GENERAL DESCRIPTION The W24010A is a high speed, low power CMOS static RAM organized as 131072 x 8 bits that operates on a single 5-volt power supply. This device is manufactured using Winbond’s high

Contextual Info: HM628127HB Series 131072-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-350B Z Rev. 2.0 Jun. 27, 1996 Description The HM628127HB is an asyncronous high speed static RAM organized as 128-k word X 8-bit. It realize high speed access time (15/20 ns) with employing 0.8 (Am shrink CMOS process and high speed circuit

Contextual Info: HM62W8127HB Series 131072-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-414 A (Z) Preliminary Rev. 0.1 Jul. 18, 1996 Description The HM62W8127HB is an asyncronous high speed static RAM organized as 128-k word X 8-bit. It realize high speed access time (25/30 ns) with employing 0.8 (Am shrink CMOS process and high speed