131072WORD Search Results

Hitachi DSA002750

Contextual Info: HM62W9127HB Series 1 M High Speed SRAM 128-kword x 9-bit ADE-203-792A (Z) Preliminary Rev. 0.1 Nov. 1997 Description The HM62W9127HB is an asynchronous 3.3 V operation high speed static RAM organized as 131072word × 9-bit. It realize high speed access time (25/30 ns) with employing 0.8 µm shrink CMOS process

Contextual Info: HN58V1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function REJ03C0146-0800Z (Previous ADE-203-314G (Z) Rev. 7.0) Rev. 8.00 Nov. 28. 2003 Description Renesas Technology's HN58V1001 is an electrically erasable and programmable ROM organized as 131072word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced

Contextual Info: HN58C1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function REJ03C0145-0800Z (Previous ADE-203-028G (Z) Rev.7.0) Rev. 8.00 Nov. 27. 2003 Description Renesas Technology's HN58C1001 is an electrically erasable and programmable ROM organized as 131072word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced

HN58C1001 Series

Abstract: HN58C1001-15 HN58C1001 HN58C1001P-15 HN58C1001FP-15 HN58C1001FP-15E HN58C1001T-15 HN58C1001T-15E REJ03C0145-0800Z
Contextual Info: HN58C1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function REJ03C0145-0800Z (Previous ADE-203-028G (Z) Rev.7.0) Rev. 8.00 Nov. 27. 2003 Description Renesas Technology's HN58C1001 is an electrically erasable and programmable ROM organized as 131072word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced

Renesas mnos

Contextual Info: HN58C1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function REJ03C0145-0800Z (Previous ADE-203-028G (Z) Rev.7.0) Rev. 8.00 Nov. 27. 2003 Description Renesas Technology's HN58C1001 is an electrically erasable and programmable ROM organized as 131072word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced

HN27C101P

Abstract: HN27C101AP-12 HN27C101AP-15 HN27C101AP-20 HN27C101AP-25 HN27C101ATT HN27C301AP HN27C301AP-12 HN27C301AP-15
Contextual Info: HN27C101AP/AFP/ATT Series HN27C301AP/AFP Series 131072-word ✕ 8-bit CMOS One Time Electrically Programmable ROM The HN27C101AP/AFP/ATT series are 131072word ✕ 8-bit one time electrically programmable ROM. Initially, all bits of the HN27C101AP/AFP/ATT, HN27C301AP /AFP

Contextual Info: HM62W9127HB Series 131072-word x 9-bit High Speed CMOS Static RAM HITACHI ADE-203-792 Z Preliminary, Rev. 0.0 Jun. 9, 1997 Description The HM62W9127HB is an asynchronous 3.3 V operation high speed static RAM organized as 131072word x 9-bit. It realize high speed access time (25/30 ns) with employing 0.8 (Am shrink CMOS process

Renesas mnos

Contextual Info: HN58V1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function REJ03C0146-0800Z (Previous ADE-203-314G (Z) Rev. 7.0) Rev. 8.00 Nov. 28. 2003 Description Renesas Technology's HN58V1001 is an electrically erasable and programmable ROM organized as 131072word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced

Contextual Info: SONY CXK5T81OOOATM/AYM/AM/ATN/AYN -10LLX/12LLX 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK5T81 OOOATM/AYM/AM/ATN/AYN is a high speed CMOS static RAM organized as 131072words by 8-bits. Special feature are low power consumption and high speed.

HN58V1001

Abstract: HN58V1001T HN58V1001FP-25 HN58V1001FP-25E HN58V1001T-25 HN58V1001T-25E
Contextual Info: HN58V1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function REJ03C0146-0800Z (Previous ADE-203-314G (Z) Rev. 7.0) Rev. 8.00 Nov. 28. 2003 Description Renesas Technology's HN58V1001 is an electrically erasable and programmable ROM organized as 131072word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced

581000P

Abstract: CXK581
Contextual Info: SONY» C X K 5 8 1 0 0 0 P / M -10L/12L/15L -10LL712LL/15LL 131072-word X 8-bit High Speed CMOS Static RAM Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this

Contextual Info: H I T A C H I / L O G I C / A R R A Y S / N E f l E O E D • 4 4 ^ 2 0 3 0 0 l 4 7 b S HN27C301P/FP Series- T -W -13- I S 131072-word x 8-bit CMOS One Time Electrically Programmable ROM The HN27C301P Series are 131072-word x 8-bit one time electrically programmable ROM. Initially, all bits of the

27C301G

Contextual Info: HN27C301G Series 131072-word X 8-bit CMOS U .V . Erasable and Programmable ROM • FEA TU R ES • Single Power S u p p ly . + 5V ±5% • Fast H igh -R eliability Program Mode and Fast High- R eliability Page Program Mode

A13G

Abstract: CXK5T81000ATN CXK5T81000AYN 5 pin A13E power supply circuit 24v ac to 3.6v dc mcoe
Contextual Info: SONY | CXK5T81OOOATN/AYN - 1 0 L L X / 1 2 L L X 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK5T81 OOOATN/AYN is a high Preliminary speed CMOS static RAM organized as 131072-words by 8 -bits. Special feature are low power consumption and

LE28C1001M

Abstract: LE28C1001T TSOP32
Contextual Info: Ordering number : EN*5129A CMOS LSI LE28C1001M, T-90/12/15 1MEG 131072 words x 8 bits Flash Memory Preliminary Overview Package Dimensions The LE28C1001M, T series ICs are 1 MEG flash memory products that feature a 131072-word × 8-bit organization and 5 V single-voltage power supply operation. CMOS

Contextual Info: HM62W8128 Seríes Product Preview 131072-Word x 8-Bit High Speed CMOS Static RAM Ordering Information Description Typ e No. A ccess tim e H M 62W 8128LP-10 100 ns H M 62W 8128LP-12 120 ns H M 62W 8128LP-1O L 100 ns H M 6 2W 81 28 LP-12 L 120 ns H M 62W 8128LP-1O SL

Contextual Info: HM62W8127H Series HM62W9127H Series 131072-word x 8/9-bit High Speed CMOS Static RAM HITACHI Rev. 0.0 Dec. 1, 1995 Description The HM62W8127H/HM62W9127H is an asynchronous 3.3 V operation high speed static RAM organized as 131,072-word 8/9-bit. It realize high speed access time 30/35/45 ns with employing 0.8 (Am CMOS

Contextual Info: HM628127HB Series 131072-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-350C Z Rev. 3.0 Nov. 19, 1996 Description The HM628127HB is an asyncronous high speed static RAM organized as 128-k word x 8-bit. It realize high speed access time (15/20 ns) with employing 0.8 (Am shrink CMOS process and high speed circuit

628128

Contextual Info: A K M 628128 Series 131072-Word x 8-Bit High Speed CMOS Static RAM The A K M 628128 is a CMOS static RAM o rg anized 128- kword x 8-bit. It realizes higher density, higher p erfo rm ance and low p o w e r consum ption by em ploying 0 .8 |im H i-C M O S A K M 628128P Series

Contextual Info: HM628127HB Series 131072-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-350B Z Rev. 2.0 Jun. 27, 1996 Description The HM628127HB is an asyncronous high speed static RAM organized as 128-k word X 8-bit. It realize high speed access time (15/20 ns) with employing 0.8 (Am shrink CMOS process and high speed circuit

Contextual Info: HM62W8127HB Series 131072-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-414 A (Z) Preliminary Rev. 0.1 Jul. 18, 1996 Description The HM62W8127HB is an asyncronous high speed static RAM organized as 128-k word X 8-bit. It realize high speed access time (25/30 ns) with employing 0.8 (Am shrink CMOS process and high speed

HM538123B Series

Contextual Info: HM538123B Series 131072-word x 8-bit Multiport CMOS Video RAM HITACHI ADE-203-231C Z Rev. 3.0 Apr. 24, 1995 Description The HM538123B is a 1-Mbit multiport video RAM equipped with a 128-kword 8-bit dynamic RAM and a 256-word 8-bit SAM (serial access memory). Its RAM and SAM operate independently and

M5M4V4S40CTP-12

Contextual Info: MITSUBISHI LSIs SDRAM Rev. 0.3 M5M4V4S40CTP-12, -15 Feb ‘97 Preliminary 4M (2-BANK x 131072-WORD x 16-BIT) Synchronous DRAM PRELIMINARY Some of contents are described for general products and are subject to change without notice. DESCRIPTION FEATURES - Single 3.3v±0.3v power supply

32PIN

Abstract: CXK5V81000ATM TSOP032-P-0820-A
Contextual Info: CXK5V81000ATM -85LLX/10LLX 131072-word x 8-bit High Speed CMOS Static RAM For the availability of this product, please contact the sales office. Description The CXK5V81000ATM is a high speed CMOS static RAM organized as 131072-words by 8-bits. A polysilicon TFT cell technology realized