1315 TRANSISTOR Search Results

S-1315A2J-M5T1U3

Abstract: S-1315B30-M5T1U3
Contextual Info: S-1315 Series www.sii-ic.com LOW CURRENT CONSUMPTION OUTPUT CAPACITOR-LESS CMOS VOLTAGE REGULATOR Rev.1.0_02 Seiko Instruments Inc., 2011-2012 The S-1315 Series, developed by using the CMOS technology, is a positive voltage regulator IC of 200 mA output current

S-1315A2J-M5T1U3

Abstract: S-1315A37-M5T1U3 S-1315C36-A6T2U3 S-1315C35-M5T1U3 S-1315D39-A6T2U3 1315D-18 S-1315D13-M5T1U3 S-1315B35-A6T2U3 S-1315A25-M5T1U3 S-1315B30-M5T1U3
Contextual Info: S-1315 Series www.sii-ic.com LOW CURRENT CONSUMPTION OUTPUT CAPACITOR-LESS CMOS VOLTAGE REGULATOR Rev.1.1_00 Seiko Instruments Inc., 2011-2013 The S-1315 Series, developed by using the CMOS technology, is a positive voltage regulator IC of 200 mA output current

1315 TRANSISTOR

Contextual Info: S-1315 Series www.sii-ic.com LOW CURRENT CONSUMPTION OUTPUT CAPACITOR-LESS CMOS VOLTAGE REGULATOR Rev.1.0_02 Seiko Instruments Inc., 2011-2012 The S-1315 Series, developed by using the CMOS technology, is a positive voltage regulator IC of 200 mA output current

S-1315

Contextual Info: S-1315 Series www.sii-ic.com LOW CURRENT CONSUMPTION OUTPUT CAPACITOR-LESS CMOS VOLTAGE REGULATOR Rev.1.0_00 Seiko Instruments Inc., 2011 The S-1315 Series, developed by using the CMOS technology, is a positive voltage regulator IC of 200 mA output current

NL10276BC12-02

Abstract: 63LHS01 KAB2402202NA31 65PWB31 THC63LVDM83A E170632 THC63LVDF84A transistor working principle TA21B 65PW
Contextual Info: TFT COLOR LCD MODULE NL10276BC12-02 16.1cm 6.3 Type XGA LVDS interface (1port) DATA SHEET (2nd edition) All information is subject to change without notice. Please confirm the delivery specification before starting to design your system. Document Number: DOD-M-1315 (2nd edition)

Contextual Info: SIEMENS SIPMOS Power Transistors • • • BUZ 76 BUZ 76 A N channel Enhancement mode Avalanche-rated Type ^DS Id ^DS on Package 1> O rdering Code BUZ 76 400 V 3.0 A 37 "C 1.8 Q TO -220 AB C 67078-S 1315-A2 BUZ 76 A 400 V 2.7 A 23 ”C 2.5 n TO -220 AB

MAX5158

Abstract: MAX5158EPE MAX515 MAX5158CEE MAX5158CPE MAX5158EEE MAX5158MJE MAX5159
Contextual Info: 19-1315; Rev 1; 12/97 Low-Power, Dual, 10-Bit, Voltage-Output DACs with Serial Interface The MAX5158/MAX5159 low-power, serial, voltageoutput, dual, 10-bit digital-to-analog converters DACs consume only 500µA from a single +5V (MAX5158) or +3V (MAX5159) supply. These devices feature Rail-toRail output swing and are available in a space-saving

MAX5158

Abstract: MAX5158EPE
Contextual Info: 19-1315; Rev 1; 12/97 Low -Pow er, Dual, 10-Bit, Voltage-Output DACs w ith Serial Interface The MAX5158/MAX5159 low-power, serial, voltageoutput, dual, 10-bit digital-to-analog converters DACs consume only 500µA from a single +5V (MAX5158) or +3V (MAX5159) supply. These devices feature Rail-toRail output swing and are available in a space-saving

MAX5158

Abstract: 13-Bit Voltage-Output DACs with Serial Interface D82R MAX5158EPE
Contextual Info: 19-1315; Rev 1; 12/97 Low-Power, Dual, 10-Bit, Voltage-Output DACs with Serial Interface The MAX5158/MAX5159 low-power, serial, voltageoutput, dual, 10-bit digital-to-analog converters DACs consume only 500µA from a single +5V (MAX5158) or +3V (MAX5159) supply. These devices feature Rail-toRail output swing and are available in a space-saving

MAX5158

Abstract: MAX515 MAX5159 MAX5159CEE MAX5159CPE
Contextual Info: 19-1315; Rev 0; 10/97 Low-Power, Dual, 10-Bit, Voltage-Output DACs with Serial Interface The MAX5158/MAX5159 low-power, serial, voltageoutput, dual, 10-bit digital-to-analog converters DACs consume only 500µA from a single +5V (MAX5158) or +3V (MAX5159) supply. These devices feature Rail-toRail output swing and are available in a space-saving

so 498

Abstract: MAX5158 max5758 max5759 MAX5158EPE
Contextual Info: 19- 1315; Rev 1; 12/97 J V Ì J lX A J W i Low-Power, Dual, 10-Bit, Voltage-Output DACs The MAX5158/MAX5159 low-power, serial, voltageoutput, dual, 10-bit digital-to-analog converters DACs consume only 500^A from a single +5V (MAX5158) or +3V (MAX5159) supply. These devices feature Rail-toRail output swing and are available in a space-saving

Contextual Info: □ ANALO G D EVIC ES FEATURES ±50 mA Voltage Programmable Current Range 1.5 ns Propagation Delay Inhibit Mode Function High Speed Differential Inputs for Maximum Flexibility Hermetically Sealed Small Gull Wing Package Compatible with AD1321, AD1324 Pin Drivers

Z16B

Contextual Info: ANALOG DEVICES FEATURES +50 mA V oltage Program m able Current Range 1.5 ns Propagation Delay Inhibit M ode Function High Speed Differential Inputs for M axim um Flexibility Herm etically Sealed Small Gull W ing Package Com patible w ith AD1321, AD1324 Pin Drivers

T03A

Abstract: TO-202 transistor mkt 344 Cu50 TRANSISTOR BC 136 MTL 728 MS-026-bcd M03A BD 669 V84A
Contextual Info: Plastic Package Dimensional/Thermal Data The following table identifies all of the plastic package configurations and pin counts per package type offered by National Semiconductor. In addition, the table provides dimensional and thermal data for each of the plastic packages

BFT46

Contextual Info: • L.bSB'm DD253fll 31T H A P X N AUER PHILIPS/DISCRETE b7E » BFT46 y v N-CHANNEL SILICON FET Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope. The transistor is intended for low level general purpose amplifiers in thick and thin-film

1315 TRANSISTOR

Contextual Info: CED6030L/CEU6030L N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 40A, RDS ON = 15.5mΩ @VGS = 10V. RDS(ON) = 22mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.

vjp44a

Abstract: MO-16B-AB TA11B TF11B cu50 ad 153 transistor transistor bd 905 transistor BC 185 mkt 344 MS-026-bcd
Contextual Info: Plastic Package Dimensional/Thermal Data The following table identifies all of the plastic package configurations and pin counts per package type offered by National Semiconductor. In addition, the table provides dimensional and thermal data for each of the plastic packages

E 94733

Abstract: p1S SOT-89 BFr pnp transistor SPICE 2G6
Contextual Info: SIEMENS BFR 92W NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT 92W PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: ON Semiconductort Amplifier Transistor MPSL51 PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −100 Vdc Collector −Base Voltage VCBO −100 Vdc Emitter −Base Voltage VEBO −4.0 Vdc Collector Current — Continuous

vqe 24 d

Abstract: vqe 24 e DIODE BZ s2e transistor VQE 24
Contextual Info: •T-3< -3 f F 6 - 50 R 12 KF EUPEC SEE T> Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Vces Maximum rated values 1200 V 50 A •c m 34032*17 Q0G0275 2^7 «UPEC Thermische Eigenschaften Thermal properties DC, pro Baustein / per module

Contextual Info: CED6030L/CEU6030L March 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 40A , RDS ON =15.5mΩ @VGS=10V. RDS(ON)=22mΩ @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). D 6 High power and current handling capability.

diode sg 5 ts

Abstract: 1BW TRANSISTOR EUPEC tt 93 n
Contextual Info: - r - 3 f- S F 6 - 100 R 06 KF EUPEC SEE » m Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 600 V 100 A •c DGaaa? GbT • UPEC Thermische Eigenschaften Thermal properties Rthjc DC, pro Baustein / per module

DIODE BZ

Abstract: F6-15R12KF
Contextual Info: 7 ^3 0 - 3 / F 6 -1 5 R12 KF E UP EC 55E D Transistor Transistor B M Q B g q ? O O O O g ? ! fc,41 B U P E C Thermische Eigenschaften ^thjc Elektrische Eigenschaften Electrical properties Hochstzulässige Werte V ces Maximum rated values 1200 V 15 A le Thermal properties

Contextual Info: 7 = 3 9 - 3 / F 6 - 15R 10 K EU P E C SEE Transistor D-ansistor Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Vces Maximum rated values 1000 V 15 A le D • 3403217 D 000270 70S «UPEC Thermische Eigenschaften Thermal properties DC, pro Baustein / per module