1345 NPN Search Results

1345FMPC

Abstract: EIA-625 GR-253-CORE TR-NWT-000468
Contextual Info: Data Sheet January 2000 1345-Type Receiver with Clock Recovery and Data Retiming Applications Operating at 1.3 µm or 1.55 µm wavelengths and at 155 Mbits/s or 622 Mbits/s, the versatile 1345-Type Receiver is manufactured in a 20-pin, plastic DIP with a multimode fiber

1345FMPC

Abstract: EIA-625 GR-253-CORE TR-NWT-000468
Contextual Info: Data Sheet February 2003 TriQuint Optoelectronics 1345-Type Receiver with Clock Recovery and Data Retiming Applications uNiDnUtCTOR Q i r T ICO pe SEM • 5-Ty 134 eiver Rec ■ Operating at 1.3 µm or 1.55 µm wavelengths and at 155 Mb/s or 622 Mb/s, the versatile 1345-Type Receiver is manufactured in a 20-pin, plastic DIP with a multimode fiber pigtail.

Contextual Info: Data Sheet January 1999 group Lucent Technologies Bell Labs Innovations 1345-Type Receiver with Clock Recovery and Data Retiming Applications • Telecommunications — Inter- and intraoffice SONET/ITU-T SDH — Subscriber loop — Metropolitan area networks

lucent OC12 receiver

Abstract: Lucent receiver GR-253-CORE TR-NWT-000468 8833 signetics 1345cnpc
Contextual Info: Data Sheet January 1999 1345-Type Receiver with Clock Recovery and Data Retiming Applications • Telecommunications — Inter- and intraoffice SONET/ITU-T SDH — Subscriber loop — Metropolitan area networks ■ High-speed data communications Description

EIA-625

Abstract: ecl 10K signetics LUCENT InGaAs 1345FMPC GR-253-CORE TR-NWT-000468 pin optical fiber lucent DS99-073LWP
Contextual Info: Data Sheet January 2000 1345-Type Receiver with Clock Recovery and Data Retiming Applications • Telecommunications — Inter- and intraoffice SONET/ITU-T SDH — Subscriber loop — Metropolitan area networks ■ High-speed data communications Description

Contextual Info: D atash eet January 1999 m icroelectronics group Lucent Technologies Bell Labs Innovations 1345-Type Receiver with Clock Recovery and Data Retiming Applications • Telecommunications — Inter- and intraoffice SONET/ITU-T SDH — Subscriber loop — Metropolitan area networks

lucent OC12 receiver

Contextual Info: Data Sheet September 1998 group y' Lucent Technologies Bell Labs Innovations 1345-Type Receiver with Clock Recovery and Data Retiming Applications • Telecommunications — Inter- and intraoffice SONET/ITU-T SDH — Subscriber loop — Metropolitan area networks

HF mark

Abstract: 2sc2463
Contextual Info: 2SC2463 Silicon NPN Epitaxial HITACHI Application Low frequency amplifier Outline MPAK k, ^ ^ ^ " 2 382 1. Emitter 2. Base 3. Collector 2SC2463 Item Symbol Ratings Unit Collector to base voltage VcBO 55 V Collector to emitter voltage < o m O Absolute Maximum Ratings Ta = 25°C

Contextual Info: 2SC3470 Silicon NPN Epitaxial HITACHI Application Low frequency am plifier Outline SPAK I 1 23 1. Emitter 2. Collector 3. Base 487 2SC3470 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VcBO 55 V Collector to emitter voltage

2Sc2309

Contextual Info: 2SC2309 Silicon NPN Epitaxial HITACHI Application Low frequency amplifier Outline TO-92 1 f l I 1. Emitter 2. Collector 3. Base 3 2 1 373 2SC2309 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage ^CBO 55 V Collector to emitter voltage

2SC1344

Abstract: 2SC1345 J344 J200 Hitachi 2SC1344 2SCI344 2SCI345
Contextual Info: HITACHI 2 S C 1 3 4 4 , 2 S C 1 3 4 5 SILICON NPN ÉPITAXIAL LOW FREQUENCY LOW NOISE AMPLIFIER 5t u t Í'.N! 11 : JEDEC TO-92 • ASSOLUTE MAXIMUM RATINGS Ilern S ym b o l MAXIMUM COLLECTOR DISSIPATION (T a ~ 2 5 °C ) 2 S C I3 4 4 2 S C I3 4 Î U n ii C u llc c io r io Ix iic v o lia te

Contextual Info: SIEMENS BFG135A NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 70mA to 130mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor

2SC1345

Abstract: 2SC1345 E
Contextual Info: HITACHI 2 S C 1 3 4 5 Í K SILICON NPN EPITAXIAL LOW FREQ UENCY LOW NOISE AMPLIFIER 1. Emitió 2 iV .II< v k ¡» 3 b iv t OìiiKAileM in mmi (JEDEC TO-92 • ABSO LUTE MAXIM UM RATINGS <Ta=25°C> Ite in 2 S C 1 J4 5 Symbol Collector to tm c voltage V cbo

A1345

Abstract: 2SC3399 2SA1345 2sc339
Contextual Info: Ordering num ber: EN 1 2 8 7 C i 2SA1345/2SC3399 PNP/ NPN Epitaxial Planar Silicon Transistors SAiYO Switching Applications with Bias Resistance i A pplicationi Switching circuit, inverter, interface circuit, driver Feature» ► Built-in bias resistor (R*j=47k£l,

2sc1345

Abstract: 2sc1344 Hitachi 2SC1344
Contextual Info: 2SC1344,2SC1345 Silicon NPN Epitaxial HITACHI Application Low frequency low noise amplifier Outline TO-92 1 f l l| ! Í 1. Emitter 2. Collector 3. Base , 3 2 U 1 327 2SC1344,2SC1345 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SC1344 2SC1345 Unit Collector to base voltage

a06 amplifier

Abstract: a06 transistor a06 transistor 165 MPS-A05 MPS-A06
Contextual Info: r— i Silicon Transistors I I B I MPS-A05 MPS-A06 The MPS-A05 and MPS-A06 are silicon planar epitaxial passivated NPN tran­ sistors designed for general purpose audio amplifier applications. a b s o lu te m a x im u m r a t i n g s : TA = 25°c unless otherwise specified

transistor 1345

Abstract: CA3246E 4460E 1333E
Contextual Info: S CA3227, CA3246 High-Frequency NPN Transistor Arrays For LowPower Applications at Frequencies Up to 1.5GHz August 1996 Features • Description Gain-Bandwidth Product fT . >3G Hz The CA3227 and CA3246 consist of five general purpose sil­

transistor npn 4-071

Abstract: SIN16 Power MOSFET Selection Guide TRANSISTOR FOR 10GHz oscillator CA3081 CFB600 mosfet selection guide CA3146 NPN
Contextual Info: A/D CONVERTERS PART NO. DESCRIPTION RESO­ CONVER­ LUTION SION RATE BITS (MIN) (MSPS) BAND­ WIDTH (MHz) SINAD A T f,„ (dB) DIFF. GAIN (%) DIFF. PHASE (DEG.) POWER DISSIPATION (mW) LOGIC TYPE SUPPLY VOLTAGE PACKAGE OPTIONS (V) (NOTE 1) (NOTE 2) TEMP. AnswerFAXSM EVAL

cm 45-12

Abstract: Mrf621 transistor 1346 420 NPN Silicon RF Transistor VK200 vk200 rf choke
Contextual Info: MRF621 SILICON T h e R F L in e 45 W - 470 M Hz "CONTROLLED Q" RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . .d es ig n e d fo r 1 2 .5 V o l t U H F large-signal a m p lifie r a p p lic a tio n s in industrial and c o m m e rc ia l

PG2349

Abstract: LEA-5 2N2811 2N2812 2N2813 2N2814 PG1335 PG1336 PG2335 PG2347
Contextual Info: P I ELECTRONICS INC A *,4 : 10 AMP jj 100 VOLT j 40 WATT Î 60 MHz ] 1 TO-61 #»a |l tP,y'v ip V:it K-ï ¡g$ •¿-¡if-' *&? ;V . ?$ TO-61 • Low saturation voltage at maximum collector current • High voltage, BVceoi.u. to 100 volts B V c E O sus)

ZENER DIODE z91

Abstract: ZNR 10K 271 TRANSISTOR REPLACEMENT ECG triac cf 406 panasonic ZNR MOV TRANSISTOR REPLACEMENT ECG 130 X2 MKP SH mr 504 diode SN2 357 hv9931 LED driver
Contextual Info: Supertex inc. HV9931DB1v2 LED Driver Demo Board Input 120VAC // Output 350mA, 40V 14W General Description The HV9931 LED driver is primarily targeted at low to medium power LED lighting applications where galvanic isolation of the LED string is not an essential requirement.

SN2 357

Abstract: triac cf 406 ZNR 10K 271 TRANSISTOR REPLACEMENT ECG ERJ-6ENF1001V HV9931 ZENER DIODE z91 Vishay Q81 Heatsink-TO220 transistor pnp ecg 180
Contextual Info: Supertex inc. HV9931DB2v1 LED Driver Demo Board Input 230VAC // Output 350mA, 40V 14W General Description The HV9931 LED driver is primarily targeted at low to medium power LED lighting applications where galvanic isolation of the LED string is not an essential requirement.

30424

Abstract: CA3246E transistor y21 transistor 1345 CA3246 CA3227 CA3227E 92CS-30424 y12 t Y12 T SO-16
Contextual Info: G E SOLID STATE 01 D E | 3fl7£Dfil □□mbS'4 3 | n r r a y s _ 7^ !- CA3227, CA3246 High-Frequency N-P-N Transistor Arrays For Low -Power Applications at Frequencies up to 1.5 G H z Features: • G ain-bandw idth p ro d u c t f f > 3 GHz

2N6052

Contextual Info: SEMTECH CORP 5ÛE D m 613^13=1 150 WATT 12 AMP CONTINUOUS, 20 AMP PEAK 00032^0 T2b 2N6051, 2N6052, 2N6058 2N6059 ‘ MAXIMUM RATINGS PARAM ETER SYM BO L C o lle cto r E m itter Voltage Vdc 80 2N6052, 2N6059 100 C o lle cto r B ase Voltage Vdc VCBO 80 2 N 6 0 5 1 , 2N6058