1351 NPN TRANSISTOR Search Results

1351 NPN TRANSISTOR

Abstract: LT1351 LT1351CMS8 LT1351CN8 LT1351CS8 LT1354 LT1365 transistor 1351 Transistor g29
Contextual Info: LT1351 250µA, 3MHz, 200V/µs Operational Amplifier U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1351 is a low power, high speed, high slew rate operational amplifier with outstanding AC and DC performance. The LT1351 features lower supply current, lower

Contextual Info: LT1351 250µA, 3MHz, 200V/µs Operational Amplifier U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1351 is a low power, high speed, high slew rate operational amplifier with outstanding AC and DC performance. The LT1351 features lower supply current, lower

LT1351

Abstract: LT1351CN8 LT1351CS8 LT1354 LT1365 transistor 1351
Contextual Info: LT1351 250µA, 3MHz, 200V/µs Operational Amplifier U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1351 is a low power, high speed, high slew rate operational amplifier with outstanding AC and DC performance. The LT1351 features lower supply current, lower

Contextual Info: OPTEK Product Bulletin OPI150TX September 1996 Optically Coupled Isolators Types OPI150TX, OPI150TXV Features • High current transfer ratio • 50kV electrical isolation • Base contact lead for conventional transistor biasing • Components processed to Optek’s

Contextual Info: LT1351 r j u n e TECH NO LO G Y 250|nA, 3MHz, 200V/p.s O p e ra tio n a l A m p lifier F€OTUR€S DCSCRIPTIOfl • 3MHz Gain Bandwidth ■ 200V/jis Slew Rate ■ 250fiA Supply Current ■ C-Load Op Amp Drives All Capacitive Loads ■ Unity-Gain Stable

Contextual Info: r r u r LT135.1 m TECHNOLOGY 250|liA, 3MHz, 200V/fis Operational Amplifier F€ATUR€S DCSCRIPTIOn • 3MHz Gain Bandwidth ■ 200V/jas Slew Rate ■ 250|oA Supply Current The LT 1351 is a low power, high speed, high slew rate operational amplifier with outstanding AC and DC perfor­

Contextual Info: r r u n m TECHNOLOGY _ LT1351 250nA, 3MHz, 200V/|as O p eration al Am plifier F€RTUR€S DCSCRIPTIOn • 3MHz Gain Bandwidth ■ 200V/|as Slew Rate ■ 250,uA Supply Current ■ Available in Tiny MSOP Package The LT 1351 is a low power, high speed, high slew rate

OP235TX

Abstract: OP235TXV OP804TX OP804TXV OPI150TX OPI150TXV
Contextual Info: 0 P roduct B ulletin OPI150TX Septem ber 1996 OPIEK Optically Coupled Isolators Types OPI15QTX, OPI150TXV • High current transfer ratio • 50kV electrical isolation • Base contact lead for conventional transistor biasing • Components processed to Optek’s

ST25C

Abstract: st 25 c transistor electronic ballast for T12 but54 BVW32 transistor a09 transistor 800V 1A Scans-0014927 A08A 14TI
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • 6 ti S 0 0 cib OOORSEi BUT 54 T m O J I P W K iiiS electronic Cwbv*ttchnotog« Silicon NPN Power Transistor r - 3 5 - is Application: Switching mode power supply, electronic ballast Features: • In multi diffusion technique

Contextual Info: SIEMENS BFG 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fy = 8GHz F = 1 .3 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

780cb

Abstract: A138-00 1351F
Contextual Info: PDA REFERENCE DESIGN Evaluation Kit Hardware Manual Contents Introduction. 334 Specification.

Contextual Info: r r u n m TECHNOLOGY _ LT1351 250nA, 3MHz, 200V/jas O p e ra tio n a l A m p lifie r F€RTUR€S D C S C R IP TIO n • 3MHz Gain Bandwidth ■ 200V/ijs Slew Rate ■ 250|jA Supply Current ■ Available in Tiny MSOP Package The LT 1351 is a low power, high speed, high slew rate

MPSA20 transistor

Abstract: MPS-A20
Contextual Info: Silicon r - - j Ief= I r^ j Transistors M PS-A 20 The MPS-A20 is a silicon planar epitaxial passivated NPN transistor, designed for general purpose am plifier applications. i_ L T J a b s o lu te m a x im u m ratings: VCEO VCBO VEB q SEATING PLANE V olts

Contextual Info: SIEMENS BFR 180W NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA • = 7GHz F = 2.1 dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: @OPTEK Product Bulletin OPI150TX September 1996 Optically Coupled Isolators Types OPI150TX, OPI150TXV Features Absolute Maximum Ratings Ta = 25° C unless otherwise noted • High current transfer ratio • 50kV electrical isolation • Base contact lead for conventional

OP804TXV

Abstract: OPI150 OP235TX OP235TXV OP804TX OPI150TX OPI150TXV
Contextual Info: OPTEK Product Bulletin OPI150TX September 1996 Optically Coupled Isolators Types OPI150TX, QPI150TXV Absolute Maximum Ratings Ta = 25° C u n le s s o th e rw is e note d • High current transfer ratio • 50kV electrical isolation • Base contact lead for conventional

transistor smd 12p

Abstract: transistor 12p smd smd transistor at t21 transistor smd t21 smd transistor 12p smd transistor 2x5 B7 smd transistor BLT81 transistor ft 960 smd 12p
Contextual Info: Philips Semiconductors ^ 711Dfi5b D0b^3flg P12 BlPHIN Product specification UHF power transistor BLT81 QUICK REFERENCE DATA FEATURES RF performance at Ts < 60 °C in a common emitter test circuit note 1 . • SMD encapsulation MODE OF OPERATION f (MHz) CW class-B, narrow band

transistor BC 245

Abstract: transistor BC 245 c ST25C transistor bc 138 FC4A TRANSISTOR BC 137 but54 TELEFUNKEN 12A3 T0126
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • 6 ti S 0 0 cib OOORSEi BUT 54 T m O JIP W K iiiS electronic Cwbv*ttchnotog« Silicon NPN Power Transistor r - 3 5 - is Application: Switching mode power supply, electronic ballast Features: • In multi diffusion technique • Short switching time

2N6054

Abstract: 2N6056
Contextual Info: SEMTECH CÔRP SÔE D • 313^13^ 0003304 OST « S E 100 WATT 8 AM P CONTINUOUS, 16 AM P PEAK 2N 6054, 2n6056 ‘ MAXIMUM RATINGS PARAM ETER SYM BO L C o lle cto r E m itter Voltage C o lle cto r B ase Voltage E m itte r B ase Voltage V dc VcBO 80 Vdc ho

5413C

Abstract: d54 marking 2SB736 2SB736A 2SD780 2SD780A 1h3-e
Contextual Info: NEC i j Í ? r / \ f 7 S ilico n T ra n sisto rs 2 S D 7 8 0 ,7 8 0 A N P N x Id * b 7 .9 NPN Silicon Epitaxial Transistor Audio Frequency Amplifier í# f i / FEATURES P ACK AG E DIMENSIONS O jg / h ^ ^ - C * W U n it - mm) 7"'J -y KICffl t L T t l t t .

Contextual Info: /XA78S40QB Universal Switching Regulator Subsystem FA IR C HILD A Schlumberger Company MIL-STD-883 July 1986 — Rev 15 Aerospace and Defense Data Sheet Linear Products Description Connection Diagram 16-Lead DIP Top View The >jA78S40QB is a monolithic regulator subsystem con­

a78s40

Abstract: 40 v 20 amp, diode "Power Diode" CR04
Contextual Info: juA78S40QB FAIRCHILD A Schlum berger Com pany Universal Switching Regulator Subsystem MIL-STD-883 July 1986 — Rev 15 Aerospace and Defense Data Sheet Linear Products Description Connection Diagram 16-Lead DIP Top View The iiA78S 40Q B is a m onolithic regulator subsystem con­

W1P 59 transistor

Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Contextual Info: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle