136MHZ Search Results

Contextual Info: MS1408 RF AND MICROWAVE TRANSISTORS 108-152MHz APPLICATIONS • • • • • • • FM CLASS C TRANSISTOR FREQUENCY 136MHz VOLTAGE 28V POWER OUT 20W POWER GAIN 8.2dB EFFICIENCY 55% COMMON EMITTER DESCRIPTION: The MS1408 is a 28 volt epitaxial silicon NPN planar transistor

MS1204

Abstract: 136MHz NPN planar RF transistor SD1019 max6535
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1204 RF AND MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • CLASS C TRANSISTOR FREQUENCY 136MHz VOLTAGE 28V POWER OUT 80W POWER GAIN 9.0dB

Contextual Info: MS1408 RF AND MICROWAVE TRANSISTORS 108-152MHz APPLICATIONS Features • • • • • • • FM CLASS C TRANSISTOR FREQUENCY 136MHz VOLTAGE 28V POWER OUT 20W POWER GAIN 8.2dB EFFICIENCY 55% COMMON EMITTER DESCRIPTION: The MS1408 is a 28 volt epitaxial silicon NPN planar transistor

NPN planar RF transistor

Abstract: MS1408 136MHz
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1408 RF AND MICROWAVE TRANSISTORS 108-152MHz APPLICATIONS Features • • • • • • • FM CLASS C TRANSISTOR FREQUENCY 136MHz VOLTAGE 28V POWER OUT 20W POWER GAIN 8.2dB

36GB

Abstract: VSC7216-01 VSC7216-02 VSC837
Contextual Info: PHYSICALDATACOM LAYER PRODUCT PRODUCT VSC7216-02 VSC7216-02 Low Power Quad 1.25Gb/s Backplane Transceiver S P E C I F I C AT I O N S : !REFCLK: 24.5 - 136MHz !Tx/Rx REFCLK Offset: 200 ppm !Serial Input Differential Terminations Adjustable Between 100Ω and 150Ω

Contextual Info: Specification for an LC Triplexer Filter MtronPTI P/N LF9287 I. General & Electrical Requirements: 1. Filter 1 Passband: 136MHz to 174MHz Insertion Loss IL, within the passband : < 0.8dB Return Loss (within the Passband): > 17dB Input Signal Power: ≤ 60-watts CW

TDA7528

Abstract: STA680Q Xtensa AM FM TUNER module car STA680 HD radio LQFP144 STA3004 MMC spi circuit diagram of 9.2 surround sound
Contextual Info: STA680 HD Radio baseband receiver Preliminary data Features General • HD Radio signal decoding for AM and FM digital audio ■ Tensilica™ signal/audio processing core architecture running up to 166 MHz ■ Hardware support for conditional access one-time programmable 640-bit memory

SD1274-01

Abstract: M113 F136
Contextual Info: SD1274-01 RF POWER BIPOLAR TRANSISTORS VHF MOBILE APPLICATIONS FEATURES SUMMARY • 160 MHz Figure 1. Package ■ 13.6 VOLTS ■ COMMON EMITTER ■ POUT = 30 W MIN. WITH 10 dB GAIN DESCRIPTION The SD1274-01 is a 13.6 V Class C epitaxial silicon NPN planar transistor designed primarily for

RD01MUS1

Abstract: adj 2576
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-060-A Date : 19th Oct. 2004 Rev.date : 22th June. 2010 Prepared : M.Wada, S.Kametani Confirmed : T.Ohkawa Taking change of Silicon RF By MIYOSHI Electronics SUBJECT: RD01MUS1 RF Characteristics at Vdd=3.6/ 4.5/ 7.2V

Contextual Info: OPA655 B U R R - B R O W N <i [ ] Wideband, Unity Gain Stable, FET-lnput OPERATIONAL AMPLIFIER FEATURES DESCRIPTION • 400MHz UNITY GAIN BANDWIDTH The OPA655 combines a very wideband, unity gain stable, voltage feedback op amp with a FET input stage to offer an ultra high dynamic range amplifier

LTM9001-AD

Abstract: LTM9001-AA LTM9001V-AD LTM9001CV-BA
Contextual Info: LTM9001-Ax/LTM9001-Bx 16-Bit IF/Baseband Receiver Subsystem FEATURES DESCRIPTION n The LTM 9001 is an integrated system in a package SiP that includes a high-speed 16-bit A/D converter, matching network, anti-aliasing filter and a low noise, differential

Contextual Info: 17313bS DDEbMMÔ S3R OPA655 BU RR - BROW N Wideband FET-lnput OPERATIONAL AMPLIFIER FEATURES DESCRIPTION • 400MHz UNITY GAIN BANDWIDTH • LOW INPUT BIAS CURRENT: 5pA The OPA655 combines a very wideband, unity gain stable, voltage feedback op amp with a FET input

MRF660

Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
Contextual Info: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040

DCRO1317-5

Contextual Info: VOLTAGE CONTROLLED OSCILLATOR SURFACE MOUNT MODEL: DCRO1317-5 136 - 174 MHz OPTIMIZED BANDWIDTH FEATURES: ► Exceptional Phase Noise Performance ► Small Size, Surface Mount ► Lead Free Patented REL-PRO Technology ► Planar Resonator Construction Phase Noise

Contextual Info: 19-2301; Rev 1; 10/06 KIT ATION EVALU E L B AVAILA LNAs with Step Attenuator and VGA The MAX2371/MAX2373 wideband low-noise amplifier LNA ICs are designed for direct conversion receiver (DCR) or very low intermediate frequency (VLIF) receiver applications. They contain single-channel, single-ended

RD07MVS1

Abstract: skam 199j 329J
Contextual Info: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-018-C Date : 12th Jun. 2003 Rev.date : 7th Jan. 2010 Prepared : M.Wada S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics RD07MVS1 RF characteristics data SUBJECT:

DCRO1317-5

Abstract: 1773m
Contextual Info: VOLTAGE CONTROLLED OSCILLATOR SURFACE MOUNT MODEL: DCRO1317-5 136 - 174 MHz OPTIMIZED BANDWIDTH FEATURES: ► Exceptional Phase Noise Performance ► Small Size, Surface Mount ► Lead Free Patented REL-PRO Technology ► Planar Resonator Construction Phase Noise

Contextual Info: H m « n i c i v i r u s jr » e m progress sy i i t i f f 140 C o m m e rc e D rive M o n tg o m eryviile , PA 1833 6-10 13 ~ T e j ; | 1 5 6 3 y1 _9 8 4 0 S D « 1 0 1 9 RF & MICROWAVE TRANSISTORS 108.152MHz APPLICATIONS * C U S S C T R A N S ÌS T O R

AN5050

Abstract: AN-5050 FIN7216-01
Contextual Info: Fairchild Semiconductor Application Note April 2003 Revised April 2003 FIN7216-01 Frequently Asked Questions The following questions and respective answers are intended to present information on Fairchild’s Multi-Gigabit Quad PHY, the FIN7216-01, that have commonly been

RD07MVS1

Abstract: micro strip line
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-018-B Date : 12th jun. 2003 Prepared : M.Wada S.Kametani Confirmed : T.Ohkawa RD07MVS1 RF characteristics data SUBJECT: SUMMARY: This application note show the RF characteristics Pin vs. Pout characteristics data and

Contextual Info: Multi-Gigabit Interconnect Chip with Extended Temperature Range FEATURES ● Extended Temperature Operation: -40°C ambient to 100°C (case) ● Four ANSI X3T11 Fibre Channel and IEEE 802.3z Gigabit Ethernet-Compliant Transceivers ● Over 8Gb/s Duplex Raw Data Rate

VHF lna with agc

Abstract: 50-836-0 016692 925103 MAX2371 MAX2371EGC MAX2373 MAX2373EGC MAX2373ETC T1233
Contextual Info: 19-2301; Rev 1; 10/06 KIT ATION EVALU E L B AVAILA LNAs with Step Attenuator and VGA The MAX2371/MAX2373 wideband low-noise amplifier LNA ICs are designed for direct conversion receiver (DCR) or very low intermediate frequency (VLIF) receiver applications. They contain single-channel, single-ended

RA60H1317M1

Contextual Info: <Silicon RF Power Modules > RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 136- to 174-MHz range. The battery can be connected directly to the drain of the

Contextual Info: Spec Sheet INDUCTORS Multilayer Chip Inductors LK series LK1608R27M-T Features Item Summary 0.27 H(±20%), 100mA, 0603 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 4000pcs Products characteristics table External Dimensions