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    13A 650V MOSFET Search Results

    13A 650V MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    13A 650V MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    P16NK65Z

    Abstract: No abstract text available
    Text: STP16NK65Z STB16NK65Z-S N-CHANNEL 650V - 0.38Ω - 13A TO-220 / I2SPAK Zener - Protected SuperMESH MOSFET PRODUCT PREVIEW Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID Pw STP16NK65Z STB16NK65Z-S 650 V 650 V < 0.50 Ω < 0.50 Ω 13 A


    Original     		PDF STP16NK65Z STB16NK65Z-S O-220 O-220 P16NK65Z

    P16NK65Z

    Abstract: JESD97 STB16NK65Z-S STP16NK65Z
    Text: STP16NK65Z STB16NK65Z-S N-CHANNEL 650V - 0.38Ω - 13A TO-220 / I2SPAK Zener - Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID Pw STP16NK65Z STB16NK65Z-S 650 V 650 V < 0.50 Ω < 0.50 Ω 13 A 13 A 190 W 190 W


    Original     		PDF STP16NK65Z STB16NK65Z-S O-220 P16NK65Z JESD97 STB16NK65Z-S STP16NK65Z

    JESD97

    Abstract: STB16NK65Z-S STP16NK65Z
    Text: STP16NK65Z STB16NK65Z-S N-CHANNEL 650V - 0.38Ω - 13A TO-220 / I2SPAK Zener - Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID Pw STP16NK65Z STB16NK65Z-S 650 V 650 V < 0.50 Ω < 0.50 Ω 13 A 13 A 190 W 190 W


    Original     		PDF STP16NK65Z STB16NK65Z-S O-220 O-220 JESD97 STB16NK65Z-S STP16NK65Z

    STB16NK65Z-S

    Abstract: STP16NK65Z B16NK65Z
    Text: STP16NK65Z STB16NK65Z-S N-CHANNEL 650V - 0.38Ω - 13A TO-220 / I2SPAK Zener - Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID Pw STP16NK65Z STB16NK65Z-S 650 V 650 V < 0.50 Ω < 0.50 Ω 13 A 13 A 190 W 190 W


    Original     		PDF STP16NK65Z STB16NK65Z-S O-220 STB16NK65Z-S STP16NK65Z B16NK65Z

    Untitled

    Abstract: No abstract text available
    Text: ICE13N65 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 13A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.25Ω Typ Qg VDS = 480V 59nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		PDF ICE13N65 250uA O-220 100us 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01

    Untitled

    Abstract: No abstract text available
    Text: ICE13N65FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 13A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.25Ω Typ Qg VDS = 480V 59nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		PDF ICE13N65FP 250uA O-220 0E-06 0E-04 0E-02 0E-00

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPB65R190C7 DataSheet Rev.2.1 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPB65R190C7 1Description D²PAK


    Original     		PDF IPB65R190C7

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPP65R190C7 DataSheet Rev.2.1 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPP65R190C7 1Description TO-220 tab


    Original     		PDF IPP65R190C7 O-220

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPD65R190C7 DataSheet Rev.2.1 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPD65R190C7 1Description DPAK


    Original     		PDF IPD65R190C7

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPW65R190C7 DataSheet Rev.2.1 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPW65R190C7 1Description TO-247


    Original     		PDF IPW65R190C7 O-247

    Untitled

    Abstract: No abstract text available
    Text: ICE60N150FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 25A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.13Ω Typ Qg VDS = 480V 85nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		PDF ICE60N150FP 250uA O-220 100us 0E-06 0E-04 0E-02 0E-00

    Untitled

    Abstract: No abstract text available
    Text: ICE60N150 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 25A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.13Ω Typ Qg VDS = 480V 85nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		PDF ICE60N150 250uA O-220 100us 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01

    FMV07N90E

    Abstract: fmh*23N50E FMP08N80E FMV07N70E FMV06N80E FMC07N65E FMV13N80E D2PACK FMI07N90E FMV07N65E
    Text: EHV or Power Electronics Power MOSFET : SuperFAP-E3 series This new power MOSFET realized the low switching loss and low switching noise. • Features ・About 20% lower power loss than conventional type, under the same noise-level condition. ・Lower RDS (on)


    Original     		PDF O-220 O-220F FMH28N50ES FMH23N50ES FMH21N50ES FMH280E FMC06N80E FMI09N70E FMI07N70E FMC09N70E FMV07N90E fmh*23N50E FMP08N80E FMV07N70E FMV06N80E FMC07N65E FMV13N80E D2PACK FMI07N90E FMV07N65E

    ICE3B0365J

    Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP
    Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Pocket Guide www.infineon.com/powermanagement N-Channel MOSFETs 500V … 900V CoolMOSTM Partnumber RDS on , ID, Qg(typ)


    Original     		PDF SPP21N50C3 SPA21N50C3 SPI21N50C3 SPP16N50C3 SPA16N50C3 SPI16N50C3 SPW21N50C3 SPP12N50C3 SPA12N50C3 SPI12N50C3 ICE3B0365J ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 22N65 Power MOSFET 22A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION As the SMPS MOSFET, the UTC 22N65 uses UTC’s advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a


    Original     		PDF 22N65 22N65 O-247 22N65L-T47-T 22N65G-T47-T QW-R502-466

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 22N65 Power MOSFET 22A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION As the SMPS MOSFET, the UTC 22N65 uses UTC’s advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a


    Original     		PDF 22N65 22N65 22N65L-T47-T 22N65G-T47-T 22N65L-T3P-T 22N65G-T3P-T QW-R502-466

    irf 739 mosfet

    Abstract: IRF 740 PD-94837
    Text: PD-94837 SMPS MOSFET IRFIB5N65APbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l High Voltage Isolation = 2.5KVRMS† l Lead-Free Benefits l Low Gate Charge Qg results in Simple


    Original     		PDF PD-94837 IRFIB5N65APbF O-220 irf 739 mosfet IRF 740 PD-94837

    IRFIB5N65A

    Abstract: 12A 650V MOSFET 13A 650V MOSFET Equivalent IRF 740 irf 739 mosfet transistor IRF 630 IRFI840G
    Text: PD-91816 IRFIB5N65A SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l High Voltage Isolation = 2.5KVRMS† Benefits l Low Gate Charge Qg results in Simple Drive Requirement


    Original     		PDF PD-91816 IRFIB5N65A O-220 IRFIB5N65A 12A 650V MOSFET 13A 650V MOSFET Equivalent IRF 740 irf 739 mosfet transistor IRF 630 IRFI840G

    IRFIB5N65A

    Abstract: TRANSISTOR 132-gd
    Text: PD - 95416 IRFB9N65APbF HEXFET Power MOSFET SMPS MOSFET Applications l l l l Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching Lead-Free VDSS RDS(on) max ID 0.93Ω 8.5A 650V Benefits l l l Low Gate Charge Qg results in Simple


    Original     		PDF IRFB9N65APbF O-220AB IRFIB5N65A TRANSISTOR 132-gd

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 22N65 Preliminary Power MOSFET HEXFET POWER MOSFET „ DESCRIPTION As the SMPS MOSFET, the UTC 22N65 uses UTC’s advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original     		PDF 22N65 22N65 O-247 22N65L-T47-T 22N65G-T47-T QW-R502-466

    22N65

    Abstract: 13A 650V MOSFET
    Text: UNISONIC TECHNOLOGIES CO., LTD 22N65 Preliminary Power MOSFET HEXFET POWER MOSFET „ DESCRIPTION As the SMPS MOSFET, the UTC 22N65 uses UTC’s advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a


    Original     		PDF 22N65 22N65 O-247 22N65L-T47-T 22N65G-T47-T QW-R502-466 13A 650V MOSFET

    IRFB9N65A

    Abstract: 52a21 ISR9246
    Text: PD -91815A International 3BR Rectifier IRFB9N65A s m p s m o s fe t HEXFET Power MOSFET Applications • Switch Mode Power Supply SMPS • Uninterruptable Power Supply • High speed power switching VDss Rds(on) max Id 0.93Q 8.5A 650V Benefits • Low Gate Charge Qg results in Simple


    OCR Scan     		PDF -91815A IRFB9N65A IRFB9N65A 52a21 ISR9246

    Untitled

    Abstract: No abstract text available
    Text: PD-91816 International IÖR Rectifier sMPs MosFET IRFIB5N65A HEXFET Power MOSFET A pplications • Switch Mode Power Supply SMPS • Uninterruptable Power Supply • High speed pow er switching • High V oltage Isolation = 2.5K V R M S V dss 650V


    OCR Scan     		PDF PD-91816 IRFIB5N65A

    Untitled

    Abstract: No abstract text available
    Text: PD -91815A International lö R Rectifier sMPs MosFET IR F B 9 N 6 5 A HEXFET Power MOSFET Applications • Switch Mode Power Supply SMPS • Uninterruptable Power Supply • High speed power switching V dss 650V Rds(on) max 0.93Î2 Id 8.5 A Benefits


    OCR Scan     		PDF -91815A