13A 650V MOSFET Search Results

P16NK65Z

Contextual Info: STP16NK65Z STB16NK65Z-S N-CHANNEL 650V - 0.38Ω - 13A TO-220 / I2SPAK Zener - Protected SuperMESH MOSFET PRODUCT PREVIEW Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID Pw STP16NK65Z STB16NK65Z-S 650 V 650 V < 0.50 Ω < 0.50 Ω 13 A

P16NK65Z

Abstract: JESD97 STB16NK65Z-S STP16NK65Z
Contextual Info: STP16NK65Z STB16NK65Z-S N-CHANNEL 650V - 0.38Ω - 13A TO-220 / I2SPAK Zener - Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID Pw STP16NK65Z STB16NK65Z-S 650 V 650 V < 0.50 Ω < 0.50 Ω 13 A 13 A 190 W 190 W

JESD97

Abstract: STB16NK65Z-S STP16NK65Z
Contextual Info: STP16NK65Z STB16NK65Z-S N-CHANNEL 650V - 0.38Ω - 13A TO-220 / I2SPAK Zener - Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID Pw STP16NK65Z STB16NK65Z-S 650 V 650 V < 0.50 Ω < 0.50 Ω 13 A 13 A 190 W 190 W

STB16NK65Z-S

Abstract: STP16NK65Z B16NK65Z
Contextual Info: STP16NK65Z STB16NK65Z-S N-CHANNEL 650V - 0.38Ω - 13A TO-220 / I2SPAK Zener - Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID Pw STP16NK65Z STB16NK65Z-S 650 V 650 V < 0.50 Ω < 0.50 Ω 13 A 13 A 190 W 190 W

Contextual Info: ICE13N65 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 13A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.25Ω Typ Qg VDS = 480V 59nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability

Contextual Info: ICE13N65FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 13A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.25Ω Typ Qg VDS = 480V 59nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPB65R190C7 DataSheet Rev.2.1 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPB65R190C7 1Description D²PAK

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPP65R190C7 DataSheet Rev.2.1 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPP65R190C7 1Description TO-220 tab

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPD65R190C7 DataSheet Rev.2.1 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPD65R190C7 1Description DPAK

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPW65R190C7 DataSheet Rev.2.1 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPW65R190C7 1Description TO-247

Contextual Info: ICE60N150FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 25A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.13Ω Typ Qg VDS = 480V 85nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability

Contextual Info: ICE60N150 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 25A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.13Ω Typ Qg VDS = 480V 85nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability

FMV07N90E

Abstract: fmh*23N50E FMP08N80E FMV07N70E FMV06N80E FMC07N65E FMV13N80E D2PACK FMI07N90E FMV07N65E
Contextual Info: EHV or Power Electronics Power MOSFET : SuperFAP-E3 series This new power MOSFET realized the low switching loss and low switching noise. • Features ・About 20% lower power loss than conventional type, under the same noise-level condition. ・Lower RDS (on)

ICE3B0365J

Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP
Contextual Info: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Pocket Guide www.infineon.com/powermanagement N-Channel MOSFETs 500V … 900V CoolMOSTM Partnumber RDS on , ID, Qg(typ)

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 22N65 Power MOSFET 22A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION As the SMPS MOSFET, the UTC 22N65 uses UTC’s advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 22N65 Power MOSFET 22A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION As the SMPS MOSFET, the UTC 22N65 uses UTC’s advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a

IRFB9N65A

Abstract: 52a21 ISR9246
Contextual Info: PD -91815A International 3BR Rectifier IRFB9N65A s m p s m o s fe t HEXFET Power MOSFET Applications • Switch Mode Power Supply SMPS • Uninterruptable Power Supply • High speed power switching VDss Rds(on) max Id 0.93Q 8.5A 650V Benefits • Low Gate Charge Qg results in Simple

Contextual Info: PD-91816 International IÖR Rectifier sMPs MosFET IRFIB5N65A HEXFET Power MOSFET A pplications • Switch Mode Power Supply SMPS • Uninterruptable Power Supply • High speed pow er switching • High V oltage Isolation = 2.5K V R M S V dss 650V

Contextual Info: PD -91815A International lö R Rectifier sMPs MosFET IR F B 9 N 6 5 A HEXFET Power MOSFET Applications • Switch Mode Power Supply SMPS • Uninterruptable Power Supply • High speed power switching V dss 650V Rds(on) max 0.93Î2 Id 8.5 A Benefits

irf 739 mosfet

Abstract: IRF 740 PD-94837
Contextual Info: PD-94837 SMPS MOSFET IRFIB5N65APbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l High Voltage Isolation = 2.5KVRMS† l Lead-Free Benefits l Low Gate Charge Qg results in Simple

IRFIB5N65A

Abstract: 12A 650V MOSFET 13A 650V MOSFET Equivalent IRF 740 irf 739 mosfet transistor IRF 630 IRFI840G
Contextual Info: PD-91816 IRFIB5N65A SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l High Voltage Isolation = 2.5KVRMS† Benefits l Low Gate Charge Qg results in Simple Drive Requirement

IRFIB5N65A

Abstract: TRANSISTOR 132-gd
Contextual Info: PD - 95416 IRFB9N65APbF HEXFET Power MOSFET SMPS MOSFET Applications l l l l Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching Lead-Free VDSS RDS(on) max ID 0.93Ω 8.5A 650V Benefits l l l Low Gate Charge Qg results in Simple

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 22N65 Preliminary Power MOSFET HEXFET POWER MOSFET „ DESCRIPTION As the SMPS MOSFET, the UTC 22N65 uses UTC’s advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is

22N65

Abstract: 13A 650V MOSFET
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 22N65 Preliminary Power MOSFET HEXFET POWER MOSFET „ DESCRIPTION As the SMPS MOSFET, the UTC 22N65 uses UTC’s advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a