13JUL Search Results

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. DIST REVISIONS H LTR DATE DESCRIPTION D ECR— 0 5 — 0 0 6 2 1 1 DWN 13JUL05 APVD CJF JB D D NOTES: A A A A PHOSPHORBRONZE. A PLATING : AREA

Contextual Info: T H IS D R AW IN G IS U N P U B L IS H E D . R E L E A S E D FO R P U B LIC A T IO N LOC CO PYRIG H T R EVISIO N S D IS T 00 A LL RIGHTS R ESER VED . D E S C R IP T IO N D2 13JUL11 HMR SÏ REVISED PER E C O - 1 1 - 0 1 41 1 7 D 6 99 . - •1 .9 1 [.0 7 5 ]

Contextual Info: F O - 5 5 1 1 1 -A HONEYWELL P A R T NUMBER REV 3 PLASTIC PLUNGER 11SM712-H58 PRODUCT CODE DOCUMENT 0079444 C H A N G E D BY MBH CHECK 13JUL11 CMH TWY2021 -.020 MAX PRETRAVEL 0 .156*.010- -. 296*.010 B B .33 OPERATING POSITION i—.094*.010 1_ 1 .088t:0000^Zl\-'

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - LOC ALL RIGHTS RESERVED. AD DIST R E V IS IO N S LTR 69.40 M A DESCRIPTION REV PER DWN DATE EC 0 G 3 C — 3 3 7 — 0 4 APVD MB JO 13JUL04 MATERIAL: FRONT INSULATOR: PBT, 3 0 %GF, U L 9 4 V - 0 , BLACK COLOR

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. AD DIST R E V IS IO N S LTR L 69.40 [ 2 .734 ] 63.50 [ 2 .502 ] DESCRIPTION DWN DATE REV PER EC 0G 3C — 3 3 7 — 0 4 13JUL04 MB

59239-4

Abstract: checking terminal crimp height SPLICE TERMINAL 13JUL99 hand crimping tools AMP hand crimping tools
Contextual Info: Instruction Sheet Hand Crimping Tools 59118, 59239-4, and 59287-2 408-1261 13JUL99 Rev B PROPER USE GUIDELINES Cumulative Trauma Disorders can result from the prolonged use of manually powered hand tools. AMP hand tools are intended for occasional use and low

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION LOG ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. DIST REVISIONS H LTR DESCRIPTION D DATE ECR—0 5 —006211 OWN APVD CJF JB 13JUL05 9,0 10,5 1 ,o 0,7 NOTES: r A A i 4,0 11 UP1 1 1DOWN

Contextual Info: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 4 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 1 2 ALL RIGHTS RESERVED. REVISIONS LOC DIST GP o o LTR DESCRIPTION A P.C. PER EC O S 1 3 - 0 0 2 4 - 0 5 DWN APVD 13JULY05 BM JG BOARD RECOMMENDATIONS:

912103

Abstract: INNER CARTON LABEL
Contextual Info: 107-68597 Packaging Specification 13Jul07 Rev F DDR II 240P SMT REC ASSY 1. PURPOSE 目的 Define the packaging specifiction and packaging method of DDR II 240P SMT REC ASSY. 订定 DDR II 240P SMT REC ASSY 产品之包装规格及包装方式。 2. APPLICABLE PRODUCT 适用范围

Contextual Info: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT — »— RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. DIST REVISIONS 14 G LTR F1 REV PER ECR 0 5 - 0 0 6 5 5 0 DATE OWN APVD 13JUL05 JR MS D - 3 . 5 1+0.20 [. 1 3 8 ± . 0 0 8 ]

Contextual Info: D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R A LL P U B L IC A T IO N R IG H TS RESERVED. C O P Y R IG H T LOC DIST HÏ 00 REVISIO N S D E S C R IP T IO N R EVISED PER E C O - 12 - 0 1 2 7 0 3 JB 13JUL12 JG DIMENSIONS ARE MAXIMUM UNLESS O TH ER W IS E SPECIEIED.

Contextual Info: 2 THIS DRAWING IS UNPUBLISHED. C O P Y R I G H T 2000 RELEASED ALL FOR PUBLICATION RIGHTS 2000 LOC RESERVED. AD DIST REVISIONS 00 LTR DESCRIPTION REVISED PER DATE E C O - 1 I -0 I 3 I 3 2 DWN 13JUL201 I APVD HMR C O N T A C T M A T I N G A R E A M E E T S THE P E R F O R M A N C E R E Q U I R E M E N T S OF

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. DIST R E V IS IO N S BD 00 LTR N 53.01 DESCRIPTION DWN DATE REV PER EC 0G 3C — 3 3 0 7 — 0 4 13JUL04 APVD MB JO A MATERIAL: FRONT INSULATOR: PBT, 3 0 %GF, U L 9 4 V -0 , BLACK COLOR

n12110

Abstract: hssdc
Contextual Info: 107-68267 Packaging Specification 13Jul07 Rev S HSSDC II 1. PURPOSE 目的 Define the packaging specifiction and packaging method of HSSDC II products. 订定 HSSDC II 产品之包装规格及包装方式。 2. APPLICABLE PRODUCT 适用范围 TYPE Product

1E45A

Contextual Info: Jl F O - 5 5 1 1 1 -A HONEYWELL P A R T NUMBER REV 9 11SM144 DOCUMENT C H A N G E D BY CHECK 0079444 MBH 13JUL11 CMH PRODUCT CODE TWV4400 ±.OIO C .0 2 0 max. PRETRAVEL ♦.0 9±.010 4 . 1 . 0 1 0- k IT K29€h _, \— .0 4 6 R. +.002 -.001 «156 P IA r * j

Contextual Info: 3 4 DRAWING MADE IN T H I R D ANGLE P R O J E C T I O N T H I S DRAWING IS UNPUBLISHED. ,19 LOC FT RIGH TS RESERVED . DI ST R EV I 5 I 0 N 5 P F ZONE LTR E D E S C R I P T I ON REVISE PER EON 0 G 3 B - 0 2 6 1 - 0 0 DATE A PPD 13JULOO O \21 3 ID P ) COPYRIGHT 19

Contextual Info: THIS DRAWING IS A CONTROLLED DOCUMENT. LOC REVISIONS DIST H LTR DESCRIPTION n r~ in 1 13 4-.0 0 , 6 hi ; — APVD CJF JB 13JUL05 ECR— 0 5 — 0 0 6 2 1 1 .3 DWN DATE i 2,75 5, — </ \ / \ A- j- \ / 2, 5 4 - - \ / , 5 \ / 9,1 c 5,08 NOTES A 2 1 0 , 1

Contextual Info: THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION ALL C O P Y R I G H T 2 00 0 RIGHTS LOC R E V I S IONS RESERVED. DESCRIPTION REVISED PER ECO- •0 I 3 1 3 2 13JUL201 I AREA MATING AREA MEETS THE PERFO R M A N C E R E O U I R E M E N T S OF PRODUCT SPECIFICATION

Mar-03

Abstract: mar03
Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. DIST BD 00 R E V IS IO N S LTR DESCRIPTION DWN DATE REV PER 0G3C— 0 3 3 7 — 04 APVD MB JO 13JUL04 A MATERIAL: FRONT INSULATOR: PBT, 30 %GF, U L94V -0, BLACK COLOR

HD-20

Abstract: tyco
Contextual Info: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 4 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 1 2 ALL RIGHTS RESERVED. REVISIONS LOC DIST GP o o LTR DESCRIPTION P.C. PER EC O S 1 3 - 0 0 2 4 - 0 5 DWN APVD 13JULY05 BM JG BOARD RECOMMENDATIONS:

s0913

Contextual Info: Si4486EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 7.9 0.028 at VGS = 6.0 V 7.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature

Contextual Info: Si4484EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.034 at VGS = 10 V 6.9 0.040 at VGS = 6.0 V 6.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature

SI4850EY-t1g

Abstract: si4850
Contextual Info: Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 8.5 0.031 at VGS = 4.5 V 7.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs

93c86vi

Abstract: 93C86V
Contextual Info: CAT93C86 Rev. C 16K-Bit Microwire Serial EEPROM FEATURES DESCRIPTION „ „ „ „ „ „ „ „ „ „ „ „ High speed operation: 3 MHz Low power CMOS technology 1.8 to 5.5 volt operation Selectable x8 or x16 memory organization Self-timed write cycle with auto-clear