141 LX Search Results
141 LX Price and Stock
Murata Manufacturing Co Ltd LXES03TBB1-141ESD Protection Diodes / TVS Diodes ESD Protection Devices WLCSP 0201 0.45pF VBR7V |
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LXES03TBB1-141 | 14,654 |
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Toshiba America Electronic Components RN1416,LXHFDigital Transistors AUTO AEC-Q Single NPN Q1BSR=4.7kO, Q1BER=10kO, VCEO=50V, IC=0.1A (SOT-346) |
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RN1416,LXHF | 8,913 |
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Toshiba America Electronic Components RN1412,LXHFDigital Transistors AUTO AEC-Q NPN Q1BSR=22kO, VCEO=50V, IC=0.1A (SOT-346) |
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RN1412,LXHF | 6,000 |
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Toshiba America Electronic Components RN1413,LXHFDigital Transistors AUTO AEC-Q NPN Q1BSR=47kO, VCEO=50V, IC=0.1A (SOT-346) |
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RN1413,LXHF | 6,000 |
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Toshiba America Electronic Components RN1417,LXHFDigital Transistors AUTO AEC-Q TR NPN Q1BSR=10kOhm, Q1BER=4.7kOhm, VCEO=50V, IC=0.1A (SOT-346) |
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RN1417,LXHF | 5,995 |
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141 LX Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: DBM-141 DBM-141 Subminiature TO-5 Double Balanced Mixer 0.4MHz to 400.0MHz The DMB-141 is a subminiature double balanced mixer which combines wide bandwidth and low conversion loss to 400MHz with the convenience of a TO-5 package suitable for wave solder installations. A |
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DBM-141 DMB-141 400MHz DBM-141 400MHz QQ-N-290, B162-58T | |
Contextual Info: Ordering number : EN %5041A _ CMOS LSI LC11011-141 SAIÊYO Computer Image Signal Processing Full-Color Gray-Scale Processor i Preliminary Overview Package Dimensions The LC 11011 -141 is a pseudo gray scale processor for |
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LC11011-141 151-Q 256-scale | |
inverter circuit diagram TDKContextual Info: User's Guide SLVU150 – January 2006 TPS61059EVM-141 This user’s guide describes the characteristics, operation, and use of the TPS6105xEVM-141 evaluation module EVM . This EVM demonstrates the Texas Instruments TPS6105x synchronous boost converter with down mode used to power |
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SLVU150 TPS61059EVM-141 TPS6105xEVM-141 TPS6105x inverter circuit diagram TDK | |
vari-l dbm
Abstract: Vari-L Company 204C DBM-141 varil 141 LX Transformers
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DBM-141 DBM-141 MIL-8TD-1276 -G-45204. aaN-200, 8162-58T MIL-STO-202E 371-1560TWX: vari-l dbm Vari-L Company 204C varil 141 LX Transformers | |
Contextual Info: SIEMENS SFH 234 S SILICON FOUR-QUADRANT PHOTODIODE Package Dimensions in Inches mm | |.141 (0.3)| A] Chip Location 012 (.3) max Common ~ . Cathode GrJd .018* 002 (0 45*0.05) 1 A Anode B - - 0 I g | .570* 039 (14.5*1.0)' .118±.008 I (3.0*0 2) .141 Anode \ |
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VR-10V, SFH234S 3b32b | |
airborn connector number MA SERIES
Abstract: 50 airborn connector pin number MA14101
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MA-131-010-161-69WQ MA-141-010-261-72WQ MA-131-010-161-69WQ airborn connector number MA SERIES 50 airborn connector pin number MA14101 | |
Contextual Info: MA-131-010-161-69WQ The Interconnect Solution Source 1 • ROW Strip Connectors .050" Microminiature Cable to Cable MA-141-010-261-72WQ MA-1 Plug viewed from end opposite #1 contact position. Examples: PLUG: RECEPTACLE: PLUG MA-131-010-161-69WQ MA-141-010-261-72WQ |
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MA-131-010-161-69WQ MA-141-010-261-72WQ MA-131-010-161-69WQ | |
107D
Abstract: 204C 213B DBM-141
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DBM-141 10dBm MIL-STD-202E F-15-68, MIL-STD-1276, B162-58T MIL-STD-1276 MIL-G-45204, 107D 204C 213B | |
107D
Abstract: 204C 213B DBM-141 141 LX
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DBM-141 10dBm MIL-STD-202E F-15-68, MIL-STD-1276, B162-58T MIL-STD-1276 MIL-G-45204, 107D 204C 213B 141 LX | |
foxconn
Abstract: MTG9 14.1" TFT P4 1800 manual ICH4 F3437 smd diode JS6 C524 psb IBM motherboard schematics DDR LF-H80P PC MOTHERBOARD msi SERVICE MANUAL
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ST92163 PQFP64 HDR/MA-20 82855GM 82801DBM foxconn MTG9 14.1" TFT P4 1800 manual ICH4 F3437 smd diode JS6 C524 psb IBM motherboard schematics DDR LF-H80P PC MOTHERBOARD msi SERVICE MANUAL | |
G022Contextual Info: LXES03TBB1-141 Low capacitance bidirectional ESD protection device 1. Features ESD protection of RF signal lines according to: - IEC61000-4-2 ESD : ±25kV(air), ±8kV(contact) - IEC61000-4-5 (Surge) : 1.5A (8/20 s) Ultra small size : 0.6 x 0.3mm , t=0.23 mm MAX |
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LXES03TBB1-141 IEC61000-4-2 IEC61000-4-5 G022 | |
lqs40a48
Abstract: ELLS 110 LQS60A48 LQS100A48-1V5J optocoupler application note
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IPC-D-275 lqs40a48 ELLS 110 LQS60A48 LQS100A48-1V5J optocoupler application note | |
Contextual Info: LD242 SIEMENS GaAs Infrared Emitter Dimensions in inches mm .141 (3.6) .571i (14.5)_ ( _ .492r o( í ? ) 0.100 (2.54) Áíiode 0 .018 (0.45) 106(2.7) GET06625 Crap Location FEATURES • GaAs infrared emitting diode, fabricated In a liquid phase epitaxy process |
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LD242 GET06625 BP103, BPX63, SFH464, SFH483 0HSD1S37 /lE100mA 0H801037 | |
Contextual Info: SIEMENS SFH229 DAYLIGHT FILTER SFH229F SILICON PIN PHOTODIODE Package Dimensions in Inches mm r .100 (2.54) Surfacenot tat — Anode .026 (0.7) •016(04) \ .204 (5.2) .177 (4.5) .161 (4.1) .157(3.9) .031 (0 8) .016(0.4) _jL_ .161 (4.0) .141 (36) — r |
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SFH229 SFH229F sensitlvity-SFH229F SFH229/F 053b32ti fl53fe 0007fc | |
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BPX81-4
Abstract: BPX81-3 BPX81 BPX-81-4 Typ BPX81-2 BPX80 BPX81-2 BPX82 BPX89 phototransistor array
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BPX81 BPX82-89, BPX82 76K130 18-pln 023SbQS BPX81-4 BPX81-3 BPX81 BPX-81-4 Typ BPX81-2 BPX80 BPX81-2 BPX82 BPX89 phototransistor array | |
SFH 487-2Contextual Info: SFH 487 GaAlAs INFRARED EMITTER Dimensions in inches mm Surface not flat .031 (.8) .016 (.4) .028 (.7) .016 (.4) .024 (.6) .016 (.4) .204 (5.2) .177 (4.5) .161 (4.1) .153 (3.9) .157 (4.0) .141 (3.6) .122 (3.1) .100 (2.54) Ø.114 (2.9) .071 (1.8) .047 (1.2) |
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IE/IE100mA SFH487 SFH 487-2 | |
Contextual Info: Infrared Emitter Dimensions in Inches mm .204 (5.2) .17^ (4.5) .157(4.0) 141 (3.6) - 122(3 .1) " 114(2.9) ' .138 (3.5) .024 (.6) .016 (.4)' ^— Ctiip Position .248(6 .3) 1.140(g9) 1.061 (27) FEATURES • GaAs IR emitter made In a liquid phaae epitaxy process |
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SFH309 SFH487, 100mA, /lE100mA SFH409 | |
Contextual Info: MA-1D1-004-325-0300 The Interconnect Solution Source RIGHT ANGLE OFFSET .050" RIGHT ANGLE OFFSET .100" STRAIGHT OFFSET .100" RIGHT ANGLE INLINE 1 • ROW Strip Connectors .050" Microminiature Board to Cable MA-141-004-261-03WS • Plug viewed from end opposite #1 contact position. |
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MA-1D1-004-325-0300 MA-141-004-261-03WS MA-1D1-004-325-0300 MA-141-004 -261-03WS | |
KMK245A1HBContextual Info: POülEREX W INC V t> E iiE 72* 141, 21 OOQMMôb S IPRX KMK245A1HB X Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 7 ^ 1 3 ' 3 5 Diode Bridge Input, |
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KMK245A1HB BP107, Amperes/600 BP107 KMK245A1HB | |
Contextual Info: SIEMENS BP 103 SILICON NPN PHOTOTRJ* NSISTOR Package Dimensions in Inches mm 141 (3.6), Ti 18 (3.0) 571 (14.5) .492(12.5) _ Emitter i- E 0.100r (2.54) 0.169(4.3) 0.161 (4.1) Base T ^ v I 6 .0 1 8 0(0.45) _L Collector .106 (2.7) .216(5.5) .208 (5.3) |
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S23b35ti 0007bb3 S23fc | |
siemens SFH nm
Abstract: siemens SFH 487-3
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phototransistor 650 nmContextual Info: SIEMENS LD 261 LD 262-269/260 SINGLE DIODE ARRAYS INFRARED EMITTER DIODES Package Dimensions in Inches mm .112(2.84) .060 (2.24) Parting lina. Flash not I ^ .141 (3.6) 126 (3.2) , 106 ( .098 ( .003 ( 2 . 1) .0 5 9 ( 1.5 ) Maximum Ratings • Low Cost • Miniature Size |
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SFH244Contextual Info: SIEMENS SFH244 S SILICON TOUR QUADRANT PHOTODIODE Package Dimensions in Inches mm lel-141 (0.3) |A l (2 0) — *j p" *-oca,'on jn ° 322± 04 ( 8 .2 ± 0 . 1) Anode D .118±.008 (3.0*02) FEATURES M axim um Ratings * Silicon Photodiode in Planar Technology |
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SFH244 lel-141 33x10-â 5x1012 850nm A53b3at 0007btib fl23b32b 0007fci4? | |
TCA 7800
Abstract: sfh462 sfh-462 SFH 462
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SFH462 BP103, TCA 7800 sfh462 sfh-462 SFH 462 |