1464 MOSFET Search Results

TELEDYNE PHILBRICK 1464

Abstract: TELEDYNE PHILBRICK OP AMP 1464 MOSFET c 1464 power transistor
Contextual Info: 1464 High Speed Power MOSFET Driver Amplifier The 1464 is a high speed, FET input, transconductance ampli­ fier, designed to drive an external power MOSFET output stage. The use of an external output stage makes the 1464 extremely versatile, allowing the users to tailor the part to their require­

TELEDYNE PHILBRICK 1464

Abstract: c 1464 power transistor
Contextual Info: 2 ÖE D iTELEDYNE COMPONENTS • öWbQE QÜGbEl 4 ü m 1464 -7 9 -/Ö High Speed Power MOSFET Driver Amplifier The 1464 is a high speed, FET input, transconductance ampli­ fier, designed to drive an external power MOSFET output stage. The use of an external output stage makes the 1464 extremely

Contextual Info: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.045Ω MAX. ◆Ultra High-Speed Switching ◆SOP-8 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP132A1545SR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching

SQ-10a

Abstract: Teledyne Philbrick 1701 TELEDYNE PHILBRICK 4131-30 TELEDYNE PHILBRICK V to F 4701 Philbrick P85AU TELEDYNE PHILBRICK 1702 TELEDYNE PHILBRICK 2203 TELEDYNE PHILBRICK 1009 teledyne TP 1322 teledyne 4452
Contextual Info: TELEDYNE PHILBRICK M 1 C R C I R C U 1 T S UNITED STATES SOUTHEAST HEADQUARTERS 1640 Huron Trail WEST Allied Drive at Rte. 128 Dedham. MA 02026 Maitland. FL 82751 30423 Canwood Street Suite 212 Agoura Hills. CA 91301 Tel: 8188893827 Twx: 910.494 1949 Tel:

2N7091

Contextual Info: 2N7091 P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) –100 0.20 –14 TO-257AB Hermetic Package S G Case Isolated D G D S P-Channel MOSFET Top View Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter

Contextual Info: 4A5 545 B DDlbOOO 400 * I N R International Hag Rectifier _ HEXFET Power MOSFET PD-9.558C IRLZ34 INTERNATIONAL R E C T I F I E R • Dynamic dv/dt Rating • Logic-Level Gate Drive • RDS on Specified at V gs=4V & 5V • 175°C Operating Temperature

irf7381pbf

Contextual Info: PD - 95940 IRF7381PbF HEXFET Power MOSFET Ultra Low On-Resistance Dual P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Lead-Freel Description l l HEXFET® These P-Channel power MOSFETs from International Rectifier utilize advanced processing

IRFI840G

Abstract: marking code C1L IRFI734G KAH marking
Contextual Info: PD-9.1001 International k?r Rectifier IRFI734G HEXFET Power MOSFET • • • • • Isolated Package High Voltage Isolation^ 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance VDSS = 450V R DS on = 1 -2 ^ lD = 3.4A

EIA-541

Abstract: IRF7751
Contextual Info: PD - 94002 IRF7751 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel VDSS RDS(on) max ID -30V 35mΩ@VGS = -10V 55mΩ@VGS = -4.5V -4.5A -3.8A Description HEXFET® power MOSFETs from International Rectifier

Contextual Info: PD-9.1005 International ioR R ectifier IRF634S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Description

Contextual Info: PD - 96145A IRF7751GPbF l l l l l l l HEXFET Power MOSFET Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel Lead-Free Halogen-Free VDSS -30V RDS(on) max ID 35mΩ@VGS = -10V 55mΩ@VGS = -4.5V

Contextual Info: FOR REVIEW ONLY IRF7751GPbF l l l l l l l HEXFET Power MOSFET Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel Lead-Free Halogen-Free VDSS RDS(on) max ID -30V 35mΩ@VGS = -10V 55mΩ@VGS = -4.5V

EIA-541

Abstract: IRF7751 TSSOP-8 footprint 7702 ST irf 146
Contextual Info: PD - 94002 IRF7751 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel VDSS RDS(on) max ID -30V 35mΩ@VGS = -10V 55mΩ@VGS = -4.5V -4.5A -3.8A Description HEXFET® power MOSFETs from International Rectifier

HEXFET SO-8

Abstract: HEXFET TSSOP-8 mosfet p-channel 10A irf
Contextual Info: PD - 96145 IRF7751GPbF l l l l l l l HEXFET Power MOSFET Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel Lead-Free Halogen-Free VDSS -30V RDS(on) max ID 35mΩ@VGS = -10V 55mΩ@VGS = -4.5V

Contextual Info: PD - 96015A IRF7751PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel Lead-Free VDSS RDS(on) max ID -30V 35mΩ@VGS = -10V 55mΩ@VGS = -4.5V -4.5A -3.8A

Contextual Info: PD-9.1001 International i » r R ectifier_ IRFI734G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS ® Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance V dss = 450V

1RL2203

Abstract: IRL2203 Dt 7132 to22oab
Contextual Info: International io R PD-9.1019 R e c t if ie r IRL2203 PROVISIONAL HEXFET Power MOSFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V g s = 5 V & 10V

31GF6 diode

Abstract: p600 mosfet MUR460 GENERAL SEMICONDUCTOR SMD DIODES ITO-220AC UGF5JT UG15JT UGF15JT UHF10JT BRIDGE RECTIFIER SMD
Contextual Info: Application Note Vishay General Semiconductor Power Factor Correction with Ultrafast Diodes By Neven A. Soric, Applications Engineer More and more switched mode power supplies SMPS are being designed with an active power factor correction (PFC) input stage. This is mainly due to the introduction of

IRFY9120

Abstract: diode ED 84 IRFY120 660B IRFV460 ISFV460D TO-257AB
Contextual Info: Data Sheet No. PD-9.660B I3R INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFV4BO N-CHANNEL 500 Volt, 0.27 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: Data Sheet No. PD-9.660B INTERNATIONAL RECTIFIER I3R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFV460 N-CHANNEL 500 Volt, 0.27 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier’s advanced line of power M O S F E T transistors.

AAT4601

Abstract: AAT4601IAS-T1 AAT4601IHS-T1 AAT4601IKS-T1
Contextual Info: AAT4601 1.8A Current Limited P-Channel Switch General Description Features The AAT4601 SmartSwitch is part of AnalogicTech's Application Specific Power MOSFET™ ASPM™ product family. It is a 1.8A Current Limited P-channel MOSFET power switch designed for high-side load-switching applications.

3nf CAPACITOR

Abstract: 839B IXS839S1
Contextual Info: IXYS IXS839 / IXS839A / IXS839B Synchronous Buck MOSFET Driver Features: General Description • Logic Level Gate Drive Compatible The IXS839/IXS839A/IXS839B are 2A Source / 4A Sink Synchronous Buck MOSFET Drivers. These Synchronous Buck MOSFET Drivers are specifically

AAT4601

Abstract: AAT4601IAS-B1 AAT4601IAS-T1 AAT4601IHS-B1 AAT4601IHS-T1
Contextual Info: AAT4601 1.5A Current Limited P-Channel Switch General Description Features The AAT4601 SmartSwitch is part of AnalogicTech's Application Specific Power MOSFET™ ASPM™ product family. It is a 1.5A Current Limited P-channel MOSFET power switch designed for high-side load-switching applications.

516MA

Abstract: SOP8 1251
Contextual Info: PRODUCT DATASHEET AAT4601 SmartSwitchTM 1.8A Current Limited P-Channel Switch General Description Features The AAT4601 SmartSwitch is a member of AnalogicTech’s Application Specific Power MOSFET ASPM™ product family. It is a 1.8A current limited P-channel MOSFET