146MHZ Search Results

Contextual Info: plerowTM APL0146-R PLL Synthesizer Module • 5 dBm Output Level at 146MHz The plerowTM PLL synthesizer module was designed for use in wireless and wireline systems in a wide range of frequency from 50 MHz to 6 GHz. ASB’s PLL provides exceptionally low spurious and phase noise

Contextual Info: ICS9342 Integrated Circuit Systems, Inc. Preliminary Product Preview 133MHz Clock Generator and Integrated Buffer for PowerPC Recommended Application: Power PC System Clock Output Features: • 12- CPUs @3.3V, up to 146MHz • 1- PCIREF @3.3V, up to 73MHz

7493 pin diagram

Abstract: cpu11 ICS9112-17 133M 318M ICS9342 7493 logic diagram
Contextual Info: Integrated Circuit Systems, Inc. ICS9342 133MHz Clock Generator and Integrated Buffer for PowerPC Recommended Application: Power PC System Clock Output Features: • 12- CPUs @ 3.3V, up to 146MHz • 1- PCIREF @ 3.3V, up to 73MHz • 1 - OUT 3.3V, 64MHz

RD30HVF1

Abstract: RD30HVF1-101 rf power transistor rd30hvf1 100OHM
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

ADC11DL066

Abstract: ADC12D040 ADC12DL066 ADC12DL066CIVS ADC12DL066EVAL DA11 LM4051CIM3-ADJ LMH6702
Contextual Info: ADC12DL066 Dual 12-Bit, 66 MSPS, 450 MHz Input Bandwidth A/D Converter w/Internal Reference General Description Features The ADC12DL066 is a dual, low power monolithic CMOS analog-to-digital converter capable of converting analog input signals into 12-bit digital words at 66 Megasamples per

RD02MUS1

Abstract: 146MHz 488-MHz
Contextual Info: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-017-B Date : 23th Dec. 2002 Rev.date : 7thJan. 2010 Prepared : T.Akaishi S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD02MUS1 RF characteristics data

SJ 2252 CIRCUIT DIAGRAM

Abstract: sj 2252 ic DB4170
Contextual Info: % M i c r o Linear ML2252, ML2259 \x ? Compatible 8-Bit A / D Converters with 2- or 8-Channel Multiplexer GENERAL DESCRIPTION FEATURES The ML2252 and ML2259 combine an 8 -bit A/ D converter, 2 -or 8 -channel analog multiplexer, and a microprocessor compatible 8 -bit parallel interface and control logic in a sin­

AN1393

Abstract: ADC12DL065 ADC12L066 ADC12L080 AN-1393 LMH6550 12L080
Contextual Info: ெࡔࡔॆӷ‫ິࠅ༹ڞ‬ ᆌᆩጀ๥AN1393 Loren Siebert 2006౎5ሆ ჋ስፌॅ‫ٷݣݴֶڦ‬ഗઠൻ‫ۯ‬ᅃ߲ఇె ຕጴገ࣑ഗ Nyquist֑ᄣۨ૙ă Nyquist૙ஃ‫׃‬௽Lj‫ܔ‬႑ࡽ֑ᄣ‫ڦ‬ೕ ࢇ๢‫ߛڦ‬໏ֶ‫ٷݣݴ‬ഗࣷߴԈࡤߛ໏ఇెຕጴገ࣑

rd02mus1

Abstract: AN-UHF-017 146MHz 488-MHz RD02MUS1 equivalent ANUHF017 MITSUBISHI APPLICATION NOTE RF POWER
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-017 Date : 23th Dec. 2002 Prepared : T.Akaishi S.Kametani Confirmed : T.Ohkawa SUBJECT: RD02MUS1 RF characteristics data SUMMARY: This application note show the RF characteristics Pin vs. Pout characteristics data and

Contextual Info: < Silicon RF Power MOS FET Discrete > RD30HVF1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically DRAWING 22.0+/-0.3 designed for VHF RF power amplifiers applications. 18.0+/-0.3

Contextual Info: October 1988 H ^ M ic ro Linear ML2252, ML2259 /uP Compatible 8-Bit A/D Converters with 2- or 8-Channel Multiplexer GENERAL DESCRIPTION FEATURES The ML2252 and ML2259 combine an 8 -bit A / D converter, 2 - or 8 -channel analog multiplexer, and a microprocessor

RD30HVF1

Abstract: 100OHM RD30HVF1-101 rd30hvf A 1469 mosfet
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

TRANSISTOR BD 689

Contextual Info: Part Number: Integra IDM165L650 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT VHF-Band Pulsed Power Transistor The high power pulsed transistor part number IDM165L650 is designed for VHF-Band systems operating at 125-167 MHz. Operating at a pulse width of 1ms with a duty factor of 20%, this dual MOSFET device

MITSUBISHI RF POWER MOS FET

Abstract: 071J
Contextual Info: < Silicon RF Power MOS FET Discrete > RD30HVF1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically DRAWING 22.0+/-0.3 designed for VHF RF power amplifiers applications. 18.0+/-0.3

TRANSISTOR SMD MARKING CODE w2

Abstract: smd TRANSISTOR code marking w2 marking code C1H SMD circuit diagram of philips PC satellite receiver marking code C1H mmic lc oscillator 30ghz shf schematic circuit 6 pin TRANSISTOR SMD CODE PA GSM intercom circuit diagram vlf metal detector schematic murata smd inductors marking codes
Contextual Info: Appendix RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors Philips Semiconductors RF Manual 5th edition APPENDIX Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright

M57737

Abstract: p01 transistor transistor tc 144 transistor power rating 5w TRANSISTOR JC PINw10 transistor c 144 Mitsubishi transistor rf final
Contextual Info: MITSUBISHI RF POWER MODULE M57737 144-148MHz, 12.5V, 30W, FM MOBILE RADIO OUTLINE DRAWING Dim ensions in mm PIN : P in : RF IN P U T © V C C 1 : 1st. DC S U P P L Y V C C 2 : 2nd . DC S U P P L Y ®PO : RF O U T P U T ® G N D : FIN H2 ABSOLUTE MAXIMUM RATINGS Tc = 2 5 <1C unless otherwise noted

Contextual Info: ADC12DL066 www.ti.com SNAS188G – FEBRUARY 2004 – REVISED FEBRUARY 2013 ADC12DL066 Dual 12-Bit, 66 Msps, 450 MHz Input Bandwidth A/D Converter w/Internal Reference Check for Samples: ADC12DL066 FEATURES DESCRIPTION • The ADC12DL066 is a dual, low power monolithic

212J

Abstract: rd30hvf
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

Contextual Info: MITSUBISHI RF POWER MODULE M67746 144-148MHz, 12.5V, 60W, FM MOBILE RADIO OUTLINE DRAWING D im ensions in mm BLOCK DIAGRAM PIN: 3 Pin : RF IN PU T (g V C C 1 : 1st. DC S U P PLY V C C 2 : 2nd. DC S U P PLY ©PO : RF O U TP U T © G N D : FIN H2 ABSOLUTE MAXIMUM RATINGS

M67746

Abstract: 146MHz t6060 144-148MHZ 300MW
Contextual Info: MITSUBISHI RF POWER MODULE M67746 144-148MHz, 12.5V, 60W, FM MOBILE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 66±0.5 3±0.3 2 60±0.5 7.25±0.8 3 51.5±0.5 1 4 2-R2±0.5 1 2 3 4 5 5 φ 0.82±0.15 PIN: 1 Pin : RF INPUT 2 VCC1 : 1st. DC SUPPLY 3 VCC2 : 2nd. DC SUPPLY

transistor D 1666

Abstract: MITSUBISHI RF POWER MOS FET RD30HVF1 RD30HVF1-101 mos 1718 transistor A 564 rf power transistor rd30hvf1 A 1469 mosfet transistor D 1762 1633 MOSFET
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

146MHz

Abstract: M68750 144-148MHZ
Contextual Info: MITSUBISHI RF POWER MODULE M68750 144-148MHz, 12.5V, 27W, FM MOBILE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 66±1 2 60±1 3 4 51.5±0.5 2 R1.5 1 4 2-R2±0.3 1 5 2 3 4 5 5 φ 0.45±0.15 PIN: 1 Pin : RF INPUT 2 VCC1 : 1st. DC SUPPLY 3 VCC2 : 2nd. DC SUPPLY

M68702L

Abstract: il68
Contextual Info: MITSUBISHI RF POWER MODULE M68702L 135-160MHz, 12.5V, 60W, FM MOBILE RADIO O U TLIN E DR AW IN G Dimensions in mm PIN : P in : RF INPUT CDVcci : 1st. DC SUPPLY VCC 2 : 2nd. DC SUPPLY ® PO : RF OUTPUT ® G N D : FIN A B S O L U T E M AXIM UM RA TING S Tc = 25 ‘C unless otherwise noted

Contextual Info: ADC12DL066 www.ti.com SNAS188G – FEBRUARY 2004 – REVISED FEBRUARY 2013 ADC12DL066 Dual 12-Bit, 66 Msps, 450 MHz Input Bandwidth A/D Converter w/Internal Reference Check for Samples: ADC12DL066 FEATURES DESCRIPTION • The ADC12DL066 is a dual, low power monolithic