BYT43
Abstract: BYT43A BYT43B BYT43D BYT43G BYT43J BYT43K BYT43M
Text: BYT43 Vishay Semiconductors Super Fast Soft Recovery Avalanche Sinterglass Diode Features • • • • • • • Miniature axial leaded Glass passivated e2 Hermetically sealed glass envelope Low reverse current High reverse voltage Lead Pb -free component
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BYT43
2002/95/EC
2002/96/EC
BYT43M
DOT-30B
BYT43K
BYT43J
BYT43G
BYT43
BYT43A
BYT43B
BYT43D
BYT43G
BYT43J
BYT43K
BYT43M
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BYT51
Abstract: BYT51A BYT51B BYT51D BYT51G BYT51J BYT51K BYT51M DIODE WITH SOD CASE
Text: BYT51. Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • Glass passivated junction Hermetically sealed package e2 Low reverse current Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
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BYT51.
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
BYT51A
OD-57
BYT51B
BYT51D
BYT51
BYT51A
BYT51B
BYT51D
BYT51G
BYT51J
BYT51K
BYT51M
DIODE WITH SOD CASE
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diode sod57
Abstract: L 9090 S330D
Text: S330D Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • • Controlled avalanche characteristics Glass passivated junction e2 Low reverse current Hermetically sealed package Lead Pb -free component Component in accordance to RoHS 2002/95/EC
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S330D
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
OD-57
18-Jul-08
diode sod57
L 9090
S330D
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BYV27-600
Abstract: BYV27600
Text: BYV27-600 Vishay Semiconductors Ultra Fast Avalanche Sinterglass Diode Features • Glass passivated • Hermetically sealed axial-leaded glass e2 envelope • Low reverse current • Ultra fast soft recovery switching • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC
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BYV27-600
2002/95/EC
2002/96/EC
MIL-STD-750,
OD-57
OD-57
18-Jul-08
BYV27-600
BYV27600
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AT90SC
Abstract: AT90SC19236R AT90SC25672R AT90SC320288RCT ISO7816 ISO7816-3
Text: Features General • High-performance, Low-power secure AVR Enhanced RISC Architecture • • • • • • – 135 Powerful Instructions Most Executed in a Single Clock Cycle Low Power Idle and Power-down Modes Bond Pad Locations Conforming to ISO 7816-2
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384-byte
128-byte
6507BS
14Apr05
AT90SC
AT90SC19236R
AT90SC25672R
AT90SC320288RCT
ISO7816
ISO7816-3
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byv27-20
Abstract: No abstract text available
Text: BYV27/. Vishay Semiconductors Ultra Fast Avalanche Sinterglass Diode Features • • • • • • • Controlled avalanche characteristic Low forward voltage e2 Ultra fast recovery time Glass passivated junction Hermetically sealed package Lead Pb -free component
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BYV27/.
2002/95/EC
2002/96/EC
OD-57
MILSTD-750,
BYV27-50
BYV27-100
BYV27-150
BYV27-200
D-74025
byv27-20
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BYV27-600
Abstract: No abstract text available
Text: BYV27-600 Vishay Semiconductors Ultra Fast Avalanche Sinterglass Diode Features • Glass passivated • Hermetically sealed axial-leaded glass e2 envelope • Low reverse current • Ultra fast soft recovery switching • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC
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BYV27-600
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
BYV27-600
D-74025
14-Apr-05
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Ultra Fast Avalanche Sinterglass Diode
Abstract: SF4001 SF4002 SF4003 SF4004 SF4005 SF4006 SF4007
Text: SF4001 / 2 / 3 / 4 / 5 / 6 / 7 Vishay Semiconductors Ultra Fast Avalanche Sinterglass Diode Features • Glass passivated • Hermetically sealed axial leaded glass e2 envelope • Low reverse current • High reverse voltage • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC
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SF4001
2002/95/EC
2002/96/EC
MIL-STD-750,
OD-57
SF4001
OD-57
SF4002
08-Apr-05
Ultra Fast Avalanche Sinterglass Diode
SF4002
SF4003
SF4004
SF4005
SF4006
SF4007
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S330D
Abstract: No abstract text available
Text: S330D Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • • Controlled avalanche characteristics Glass passivated junction e2 Low reverse current Hermetically sealed package Lead Pb -free component Component in accordance to RoHS 2002/95/EC
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S330D
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
OD-57
08-Apr-05
S330D
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BYT62
Abstract: No abstract text available
Text: BYT62 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • • Glass passivated junction Hermetically sealed package e2 Controlled avalanche characteristic Low reverse current Lead Pb -free component Component in accordance to RoHS 2002/95/EC
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BYT62
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
OD-57
08-Apr-05
BYT62
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BYV27-600
Abstract: No abstract text available
Text: BYV27-600 Vishay Semiconductors Ultra Fast Avalanche Sinterglass Diode Features • Glass passivated • Hermetically sealed axial-leaded glass e2 envelope • Low reverse current • Ultra fast soft recovery switching • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC
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BYV27-600
2002/95/EC
2002/96/EC
MIL-STD-750,
OD-57
OD-57
08-Apr-05
BYV27-600
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BYW82
Abstract: BYW83 BYW84 BYW85 BYW86 diode SOD 64
Text: BYW82 / 83 / 84 / 85 / 86 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • Glass passivated junction Hermetically sealed package Controlled avalanche characteristics Low reverse current e2 949588 • High surge current loading
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BYW82
2002/95/EC
2002/96/EC
OD-64
MIL-STD-750,
BYW82
OD-64
BYW83
08-Apr-05
BYW83
BYW84
BYW85
BYW86
diode SOD 64
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BA779
Abstract: BA779-GS08 BA779-GS18 BA779S BA779S-GS08 BA779S-GS18
Text: BA779 / BA779S Vishay Semiconductors RF PIN Diodes - Single in SOT-23 Features • Wide frequency range 10 MHz to 1 GHz • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 e3 1 2 16923 Applications Current controlled HF resistance in adjustable
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BA779
BA779S
OT-23
2002/95/EC
2002/96/EC
OT-23
BA779
BA779-GS18
BA779-GS08
BA779-GS08
BA779S
BA779S-GS08
BA779S-GS18
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DOT30B
Abstract: No abstract text available
Text: BYT43 Vishay Semiconductors Super Fast Soft Recovery Avalanche Sinterglass Diode Features • • • • • • • Miniature axial leaded Glass passivated e2 Hermetically sealed glass envelope Low reverse current High reverse voltage Lead Pb -free component
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BYT43
2002/95/EC
2002/96/EC
BYT43A
BYT43B
BYT43D
BYT43G
BYT43J
BYT43K
BYT43M
DOT30B
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Untitled
Abstract: No abstract text available
Text: 70 MHz Bandpass Filter 0.5 MHz bandwidth Part Number SF0070BA03046S Integrated Circuit Systems, Inc. TYPICAL PERFORMANCE Horizontal: 1 MHz/div Vertical from top : Magnitude Phase Deviation Group Delay Variation 10 & 1 5 500 dB/div deg/div ns/div SPECIFICATION
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SF0070BA03046S
14-Apr-05
QF12/3
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8553
Abstract: No abstract text available
Text: BA779-2 Vishay Semiconductors RF PIN Diodes - Dual in SOT-23 Features • Wide frequency range 10 MHz to 1 GHz • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 2 3 e3 1 1 Applications 2 3 18256 Current controlled HF resistance in adjustable
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BA779-2
OT-23
2002/95/EC
2002/96/EC
OT-23
BA779-2
BA779-2-GS18
BA779-2-GS08
D-74025
14-Apr-05
8553
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Untitled
Abstract: No abstract text available
Text: BY527 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • • • Controlled avalanche characteristics Glass passivated junction e2 Hermetically sealed package Low reverse current High surge current capability Lead Pb -free component
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BY527
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
BY527
D-74025
14-Apr-05
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byt51a
Abstract: No abstract text available
Text: BYT51. Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • Glass passivated junction Hermetically sealed package e2 Low reverse current Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
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BYT51.
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
BYT51A
BYT51B
BYT51D
BYT51G
BYT51J
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BY228
Abstract: BY228-13 BY228-15
Text: BY228/13 / BY228/15 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • Glass passivated junction Hermetically sealed package e2 Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 949588
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BY228/13
BY228/15
2002/95/EC
2002/96/EC
OD-64
MIL-STD-750,
BY228-13
OD-64
BY228-15
BY228
BY228-13
BY228-15
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SF4001
Abstract: SF4002 SF4003 SF4004 SF4005 SF4006 SF4007
Text: SF4001 / 2 / 3 / 4 / 5 / 6 / 7 Vishay Semiconductors Ultra Fast Avalanche Sinterglass Diode Features • Glass passivated • Hermetically sealed axial leaded glass e2 envelope • Low reverse current • High reverse voltage • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC
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Original
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SF4001
2002/95/EC
2002/96/EC
MIL-STD-750,
OD-57
SF4001
OD-57
SF4002
D-74025
14-Apr-05
SF4002
SF4003
SF4004
SF4005
SF4006
SF4007
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. UOC DIST AD 00 REVISIONS LTR K DESCRIPTION DATE REV PER 0G3C—0224—05 DWN APVD RB JG 14APR05 THE NOTED DIMENSIONS APPLY AT THE INTERSECTION OF THE POST AND HOUSING
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14APR05
31MAR2000
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A205K
Abstract: 8-40 UNS-2A
Text: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T B Y 1T C O E L E C T R O N IC S -, P U B L IC A T IO N R IG H T S 2 - REVISIONS RESERVED. AD C O R P O R A T IO N . 00 D E S C R IP T IO N A' NOTES: 1. ALL MATERIALS AND FINISHES
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14APR05
31MAR2000
A205K
8-40 UNS-2A
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1SYC004
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T B Y 1T C O E L E C T R O N IC S -, P U B L IC A T IO N R IG H T S 2 - REVISIO N S RESERVED. AD C O R P O R A T IO N . 00 D E S C R IP T IO N A2 NOTES: ALL MATERIALS AND FINISHES SHALL COMPLY WITH
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14APR05
1SYC004
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Untitled
Abstract: No abstract text available
Text: THIS C DR A WI N G COPYRI GHT IS UNPUBL IS HED. 19 RELEASED BY AMP INCORPORATED. ALL F OR P U B L I C A T I O N RIGHTS RESERVED. [J+] ^ 44i 44i 44 Jpg] D [§] [gi [gl [gl « [g] [§][§][§][§] [gi [gi ig] [gi [gl [g] [g] [g] [gl [gl [gl [gi « « 0 0 [g] [g] [g] [g]
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27JUN96
0B20-0820-97
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