14F1 Search Results

TB-595

Abstract: tb 595 scheme electronics transistor yb tb595 B2099
Contextual Info: TB-595+ N1 SMA F 10nF 12x06 IF OUT B20-14F13+ 1 1 B20-99-24-03+ IF OUT 2 B1 A1 B2 A2 B3 A3 GND 3 LE DUT VCC RF/IF DATA CLK B20-99-24-03+ 12 11 B1 A1 B2 A2 B3 A3 10 SMA F VCC VCO RF B20-14F13+ 4 SMA F VCC VCO IF VCC VCO RF 9 1 REF IN B20-14F13+ 1 5 REF IN GND

Contextual Info: Freescale Semiconductor Technical Data MRF6S9130H Rev. 0, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9130HR3 MRF6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier

MRF9030MBR1

Abstract: MRF9030MR1 100B7R5JP
Contextual Info: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9030MR1 MRF9030MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

01E16

Abstract: 02A16 08D16 08C16 09A16 02a16 021 03A16 04B16 V18Z1 DA16
Contextual Info: MITSUBISHI MICROCOMPUTERS M35074-XXXSP SCREEN CHARACTER and PATTERN DISPLAY CONTROLLERS DESCRIPTION The M35074-XXXSP is a character pattern display control IC can PIN CONFIGURATION TOP VIEW display on the digital camera, the digital video, the digital television, the CRT display, the liquid crystal display and the plasma

ALNUP+161609

Contextual Info: HAMMOND MANUFACTURING CO. INC. 475 Cayuga Rd., Suite 100 Cheektowaga, NY 14225 Tel: 716 630-7030 Fax: (716) 630-7042 www.hammondmfg.com Manufacturer’s Suggested U.S. Resale Pricing Transformers & Inductors Small Enclosures Outlet Strips Electrical Enclosures

cbb22

Contextual Info: HAMMOND MANUFACTURING CO. LTD. 394 Edinburgh Road North Guelph, Ontario N1H 1E5 Tel: 519 822-2960 Fax: (519) 822-0715 www.hammondmfg.com Manufacturer’s Suggested Canadian Resale Pricing Transformers & Inductors Small Enclosures Outlet Strips Electrical Enclosures

RF-35-0300

Abstract: A04T-5 93F2975 A113 MRF9060MBR1 MRF9060MR1 100B470JP 100B100JP 44F3360
Contextual Info: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

Contextual Info: Freescale Semiconductor Technical Data Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part MRF9030M Rev. 9, 5/2006 replacement. N suffix added to part number to indicate transition to lead - free terminations. RF Power Field Effect Transistors

rf push pull mosfet power amplifier

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9120 Rev. 9, 3/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFET MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of

RF-35-0300

Abstract: MRF9060 MRF9060LSR1 MRF9060R1 MRF9060S MRF9060L
Contextual Info: MOTOROLA Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

Contextual Info: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

93F2975

Abstract: Motorola 305
Contextual Info: MOTOROLA Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S9130H Rev. 2, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9130HR3 MRF6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications

94B41

Contextual Info: Ambient Light Sensor and Proximity Sensor with I2C Interface APS-16D25-11-DF8/TR8 1 1 234567381 1 9ABC3D51ECF5183D8CDF1 1 21345678719ABACB4DEA16EE876F4B6F181B1851 2134567871AE8B6F185C8FB1 21874F1AA1BA1ACB4E1AFA1 !1A"ACB6F#1

MRF9060

Abstract: MRF9060LR1 MRF9060LSR1 MRF9060S 9600MHz
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9060 Rev. 9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9060LR1 MRF9060LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these

rf push pull mosfet power amplifier

Abstract: MRF9120 MRF9120LR3 marking WB4
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9120 Rev. 10, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFET MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of

m28748

Abstract: MS2500-P2A22-61 13B00F1A 13E10L1A ms2500-p2A22 c00f1 M28748/13C00F1A M28748/14F00G1A M28748/13F00F1A
Contextual Info: MMM L-C-28748/13 & /14 / 4,5,7,9,11,14,18,20,26, 29,34,44,50,75 CONTACTS f Series M M M is described more comprehensively in our “ M M M " brochure. SIZE 22 CONTACTS Socket Pin Contacts Contacts Shown with guide hardware 18 Not in Mil Spec 20 Mil Spec

93F2975

Abstract: marking 865 amplifier 100B120JP 865 marking amplifier
Contextual Info: Freescale Semiconductor Technical Data Rev. 6, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance

PDU14F80

Contextual Info: data Programmable Delay Units delay devices; inc. 4 Bit T T L Interfaced S ER IES : PDU-14F Tast Logic Specifications: • Supply currant: Icch = 74 ma. Iccl = 3 0 ma. ■ Minimum pulse-width = ■ Delay variation: M onotonie in one direction. ■ P rogram m ed delay tolerance: 5 % o r 1

YLE relay

Abstract: CN8471AEPF ebe switches CN8471AKPF CN8472AEPF CN8472AKPF CN8474AEPF CN8474AKPF CN8478 CN8478AEPF
Contextual Info: Preliminary Information C a H E X A T This document contains information on a product under development. The parametric information contains target parameters that are subject to change. CN8478/CN8474A/CN8472A/CN8471A Multichannel Synchronous Communications Controller MUSYCC

MRF9060

Abstract: MRF9060R1 MRF9060S MRF9060SR1 MRF9060 equivalent
Contextual Info: MOTOROLA Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

Contextual Info: ï a s f Logic data \ q s x Programmable Delay Units ÿ la y W S ER IES : PDU-14F 4 Bit T T L Interfaced devicesYinc Specifications: • Supply current: ■ D elay variation: M o n o to n ic in one d ire c tio n . ■ P rogram m ed delay tolerance: 5% o r 1

p9573-11

Abstract: Conexant P9573-11 p9573 conexant Conexant smartdaa 20463-11 schematic laptop motherboard 20463 kds 12.000 MD26 schematic diagram of laptop motherboard "dib transformer"
Contextual Info: 6PDUW+& 0RELOH0RGHP + 'HYLFH 3 6PDUW'$$  DQG2SWLRQDO9RLFH&RGHF   'HVLJQHU}V*XLGH 3UHOLPLQDU\ Conexant Proprietary Information

A113

Abstract: MRF9060NBR1 MRF9060NR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9060N Rev. 10, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9060NR1 MRF9060NBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these