14MAY07 Search Results

SAE J1128

Abstract: J1128 SAE-J-1128 parker 535-53DA02-303 SAE-J1128
Contextual Info: A. HONEYWELL PART NUMBER REV DOCUMENT D 0030760 CHANGED BY CH 14MAY07 CHECK CMH 5 3 5 -5 3 D A 0 2 -3 0 3 B B LEADWIRES 2 20 AWG, SAE J1128, TYPE TXL POLYETHYLENE INSULATION, 125’C RATED TEMP. HOUSING SAE # 360 BRASS, PASSIVATED ”0 ” RING AS 5 6 8 -9 0 6 , NITRILE RUBBER, 90 DUROMETER (PARKER 3 -9 0 6 , BUNA N OR EQUIVALENT)

SOT 143 footprint

Abstract: waffle
Contextual Info: SURFACE MOUNT NETWORKS MPD/MPDA Vishay Thin Film Molded, SOT-143 Resistor Network FEATURES • • • • • Lead Pb -free available Tight Ratio Tolerances to 0.05 % ± 2 ppm Tracking Standard Values Stocked Standard SOT-143 Footprint Pb-free Available

Contextual Info: SURFACE MOUNT NETWORKS CSO Vishay Thin Film Sandwich, 50 Mil Pitch, Dual In-Line Resistor Networks FEATURES • Lead Pb -free available Pb-free • Gold-to-gold terminations. External leads are Available attached directly to gold pads on the ceramic substrate by thermo-compression bonding (no RoHS*

Si1050X

Contextual Info: SPICE Device Model Si1050X Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

MS-013

Abstract: WOMC
Contextual Info: Vishay Thin Film Molded, 50 Mil Pitch, Dual In-Line Resistor Networks, Wide Body FEATURES • Lead Pb -free available • Standard 16 and 20 Pin Counts (0.300" Wide Body) JEDEC MS-013 • Rugged, molded case construction • High stable thin film element

Si7154DP-T1-E3

Contextual Info: New Product Si7154DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0032 at VGS = 4.5 V 30 0.005 at VGS = 2.5 V 30 VDS (V) 20 Qg (Typ) 40 PowerPAK SO-8 S 6.15 mm S COMPLIANT D APPLICATIONS S 3 • Low Input Voltage Buck Converters

DG9461

Abstract: DG9461DV-T1 DG9461DY-T1 HP4192A
Contextual Info: DG9461 Vishay Siliconix Low-Voltage Single SPDT Analog Switch DESCRIPTION FEATURES The DG9461 is a single-pole/double-throw monolithic CMOS analog device designed for high performance switching of analog signals. Combining low power, high speed tON: 35 ns, tOFF: 20 ns , low on-resistance (rDS(on): 40 Ω)

74873

Abstract: 417 mosfet
Contextual Info: SPICE Device Model SiB415DK Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUD50N04

Contextual Info: SPICE Device Model SUU/SUD50N04-16P Vishay Siliconix N-Channel 40-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

418L

Abstract: 419L DG419LDY-E3 cnc schematic DG419LDY DG417L DG417LDY DG418L DG419L 71009
Contextual Info: DG417L/418L/419L Vishay Siliconix Precision Monolithic Low-Voltage CMOS Analog Switches DESCRIPTION FEATURES The DG417L/418L/419L are low voltage pin-for-pin compatible companion devices to the industry standard DG417/418/419 with improved performance. • 2.7- thru 12 V Single Supply or

DG417B

Abstract: DG417BDJ DG418B DG418BDJ DG419B 418B
Contextual Info: DG417B/418B/419B Vishay Siliconix Precision Monolithic Quad SPST CMOS Analog Switches DESCRIPTION FEATURES The DG417B/418B/419B monolithic CMOS analog switches were designed to provide high performance switching of analog signals. Combining low power, low leakages, high

DG407DN-t1-e3

Abstract: DG406 DG406DJ-E3 DG407DW DG406DJ DG406DN DG406DW DG407 S8-A marking
Contextual Info: DG406/407 Vishay Siliconix 16-Ch/Dual 8-Ch High-Performance CMOS Analog Multiplexers DESCRIPTION FEATURES The DG406 is a 16-channel single-ended analog multiplexer designed to connect one of sixteen inputs to a common output as determined by a 4-bit binary address. The DG407

A2023

Abstract: 70953 SiB412DK
Contextual Info: SPICE Device Model SiB412DK Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

DG2531

Abstract: DG2532 HP4192A MSOP-10
Contextual Info: DG2531/DG2532 Vishay Siliconix 0.4-Ω Low-Voltage Dual SPDT Analog Switch DESCRIPTION FEATURES The DG2531/DG2532 is a sub 1-Ω 0.4 Ω at 2.7 V dual SPDT analog switches designed for low voltage applications. • • • • • The DG2531/DG2532 has on-resistance matching (less than

s4 vishay

Abstract: DG2034 HP4192A MSOP-10 QFN-12
Contextual Info: DG2034 Vishay Siliconix Single 4:1 Low rON Multiplexers DESCRIPTION FEATURES The DG2034 is a low voltage, low rON, high bandwidth single 4 to 1 analog multiplexer designed for high performance switching of analog and video signals. Combining low power; fast switching; low on-resistance, flatness and matching; and

74491

Abstract: Si7154DP-T1-E3 si7154dp si7154
Contextual Info: New Product Si7154DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0032 at VGS = 4.5 V 30 0.005 at VGS = 2.5 V 30 VDS (V) 20 Qg (Typ) 40 PowerPAK SO-8 S 6.15 mm S COMPLIANT D APPLICATIONS S 3 • Low Input Voltage Buck Converters

Contextual Info: SPICE Device Model SUU/SUD50N04-10P Vishay Siliconix N-Channel 40-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUD50NP04-94

Contextual Info: SPICE Device Model SUD50NP04-94 Vishay Siliconix N- and P-Channel 40-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

74624

Abstract: 6343 AN609 Si4834BDY
Contextual Info: Si4834BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

7107 applications

Abstract: SILICONIX* 9953 7107 datasheet 8942 AN609 Si4848DY 74304
Contextual Info: Si4848DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

74873

Contextual Info: SPICE Device Model SiB415DK Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

74626

Abstract: 31.3573 9936 mosfet Si4837DY AN609
Contextual Info: Si4837DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: HE3 Vishay Wet Tantalum Capacitors Tantalum-Case with Glass-to-Tantalum Hermetic Seal for - 55 °C to + 85 °C Operation FEATURES Vishay HE3 represents a major breakthrough in wet tantalum capacitor technology for high-energy applications. The unique case design provides for the highest capacitance per

T1 Packaging vishay

Contextual Info: SURFACE MOUNT NETWORKS MP Vishay Thin Film Surface Mount Network FEATURES • Lead Pb -free available Pb-free • Small physical size SC70 format Available RoHS* • Tight resistance ratio tolerances ± 0.05 % MP 3 LEAD COMPLIANT • Low TCR tracking ± 2 ppm