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    14N30 Search Results

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    14N30 Price and Stock

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    Nisshinbo Micro Devices R3114N301A-TR-FE

    Supervisory Circuits 0.8% Vset accuracy Low Voltage Detector
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    Mouser Electronics R3114N301A-TR-FE 79
    • 1 $1.32
    • 10 $0.80
    • 100 $0.51
    • 1000 $0.31
    • 10000 $0.26
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    IXYS Corporation IXBT14N300HV

    IGBTs IGBT BIMSFT-VERY HIV OLT
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    Mouser Electronics IXBT14N300HV
    • 1 $60.07
    • 10 $51.23
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    • 1000 $42.26
    • 10000 $42.26
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    TTI IXBT14N300HV Tube 300
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    • 1000 $40.77
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    Nisshinbo Micro Devices RP114N301D-TR-FE

    LDO Voltage Regulators Low voltage LDO Regulator
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    Mouser Electronics RP114N301D-TR-FE
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    Nisshinbo Micro Devices R1114N301B-TR-FE

    LDO Voltage Regulators 150mA Voltage Regulator (LDO Regulator)
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    Mouser Electronics R1114N301B-TR-FE
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    Nisshinbo Micro Devices R1114N301D-TR-FE

    LDO Voltage Regulators LDO Regulator
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    Mouser Electronics R1114N301D-TR-FE
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    Find more 14N30 price and stock on Findchips.com

    14N30 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    50N652

    Contextual Info: PRODUCT GROSS DICES CHIP SIZE mil wafer form chip form IR@VR (mA@V) VF@IF (V@A) Mask S14BTA 14N30A 60,478 0.35x0.35 mm 0.32+/-0.01 ≦0.002@33 ≦0.24@100µA ≦0.32@1mA ≦0.40@10mA ≦0.50@30mA ≦0.1@100mA 35N251 9,258 35x35 33.8+/-0.5 ≦0.2@23 ≦0.44@1


    Original     		35x35 50x50 60x60 72x72 50N652 PDF

    14N30

    Abstract: FK0133 14N3 7103 KA7812 KA7812 INTEGRATED CIRCUIT transistor ka7812 TO-3P
    Contextual Info: TO-3P Tube Packing Data TO-3P Tube Packing Configuration: Figure 1.0 30 units per Tube Packaging Description: Bubble Sheet 15 Tubes per box TO-3P parts are shipped in tube. The tube is made of PVC plastic treated with anti-static agent.These tubes in standard option are placed inside a dissipative plastic


    Original     		590x330x245 KA7812-AE IMSYS777 A710103105 FK0133 14N30 14N30 FK0133 14N3 7103 KA7812 KA7812 INTEGRATED CIRCUIT transistor ka7812 TO-3P PDF

    14N30

    Abstract: fdb fairchild 200a 300v mosfet MOSFET 300V FDB SERIES APPLICATION NOTES
    Contextual Info: UniFET 14N30 TM 300V N-Channel MOSFET Features Description • 14A, 300V, RDS on = 0.29Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 18 nC)


    Original     		FDB14N30 FDB14N30 FDB14N30TM 14N30 fdb fairchild 200a 300v mosfet MOSFET 300V FDB SERIES APPLICATION NOTES PDF