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Zener diode 81A

Abstract: zener diode voltage list Zener diode 81e A2 12 zener diode zener diode a2 11 zener a2 diode zener 5.1V IZK ZENER DIODE 5.1V zener 8v diode zener 8w
Contextual Info: Tolerance = 5% Absolute Maximum Ratings * TA = 25°C unless otherwise noted 3 Symbol PD Parameter Power Dissipation Value 350 Units mW TSTG Storage Temperature Range -55 to +150 °C TJ Operating Junction Temperature +150 °C 2 1 SOT-23 * These ratings are limiting values above which the serviceability of the diode may be impaired.

Contextual Info: FQA46N15 N-Channel QFET MOSFET 150 V, 50 A, 42 mΩ Features Description • 50 A, 150 V, RDS on = 42 mΩ (Max) @VGS = 10 V, ID = 25 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET

Contextual Info: Tolerance = 5% Absolute Maximum Ratings * TA = 25°C unless otherwise noted 3 Symbol PD Parameter Power Dissipation Value 350 Units mW TSTG Storage Temperature Range -55 to +150 °C TJ Operating Junction Temperature +150 °C 2 1 SOT-23 * These ratings are limiting values above which the serviceability of the diode may be impaired.

P N-Channel D-S MOSFET

Contextual Info: FCA20N60F N-Channel SuperFET FRFET® MOSFET 600 V, 47 A, 70 mΩ Features Description • 650 V @ TJ = 150°C • Typ.RDS on = 150 mΩ • Fast Recovery Type (Typ. Trr = 160 ns ) • Ultra Low Gate Charge (Typ. Qg = 75 nC ) • Low Effective Output Capacitance (Typ. Coss.eff = 165 pF )

18c zener diode

Abstract: 8A SOT23-3 MARKING 8F MMBZ5231B 81E zener diode
Contextual Info: Tolerance = 5% Absolute Maximum Ratings * TA = 25°C unless otherwise noted 3 Symbol PD Parameter Power Dissipation Value 350 Units mW TSTG Storage Temperature Range -55 to +150 °C TJ Operating Junction Temperature +150 °C 2 1 SOT-23 * These ratings are limiting values above which the serviceability of the diode may be impaired.

Contextual Info: FCA20N60F N-Channel SuperFET FRFET® MOSFET 600 V, 20 A, 190 mΩ Features • 650 V @ TJ = 150°C • Typ.RDS on = 150 mΩ • Fast Recovery Type (Typ. Trr = 160 ns ) • Ultra Low Gate Charge (Typ. Qg = 75 nC ) • Low Effective Output Capacitance (Typ. Coss.eff = 165 pF )

Contextual Info: BAV99 Small Signal Diode Connection Diagram 3 3 3 A7 2 1 2 1 2 1 SOT-23 Absolute Maximum Ratings* Symbol VRRM IF AV IFSM Tstg Tj TA = 25°C unless otherwise noted Value Units 70 200 V mA 1.0 8.0 -55 to +150 -55 to +150 A A °C °C Parameter Maximum Repetitive Reverse Voltage

16Mcolors

Contextual Info: M M U I Accelerator ProMotion-6422 Features Block Diagram ♦ High performance GUI accelerator ♦ Integrated Clock & DAC - Pixel clock to 150 MHz - Gamma correction ♦ Smooth scaled video at 30 fps - Hardware scaling up to full screen - YUV to RGB conversion

AN65463

Abstract: 1300 3d VITA1300 VITA 1300 application note NOIV1SE1300A-QDC NOIV1SN1300A 0x2113 VITA 1300 NOIV1SE1300A V2SN
Contextual Info: NOIV1SN1300A, NOIV2SN1300A VITA 1300 1.3 Megapixel 150 FPS Global Shutter CMOS Image Sensor http://onsemi.com Features • • • • • • • • • • • • • • • • • • • • • • SXGA: 1280 x 1024 Active Pixels 4.8 mm x 4.8 mm Pixel Size

VITA 1300 application note

Abstract: AN65463 VITA1300 Cyclone 1300 3d NOIV2SE1300A-QDC NOIV1SE1300A-QDC AN654 CYCLONE FPGA AN663
Contextual Info: NOIV1SN1300A, NOIV2SN1300A VITA 1300 1.3 Megapixel 150 FPS Global Shutter CMOS Image Sensor http://onsemi.com Features • • • • • • • • • • • • • • • • • • • • • • SXGA: 1280 x 1024 Active Pixels 4.8 mm x 4.8 mm Pixel Size

AN65463

Abstract: VITA 1300 application note VITA 1300
Contextual Info: NOIV1SN1300A, NOIV2SN1300A VITA 1300 1.3 Megapixel 150 FPS Global Shutter CMOS Image Sensor http://onsemi.com Features • • • • • • • • • • • • • • • • • • • • • • SXGA: 1280 x 1024 Active Pixels 4.8 mm x 4.8 mm Pixel Size

Contextual Info: NOIV1SN1300A, NOIV2SN1300A VITA 1300 1.3 Megapixel 150 FPS Global Shutter CMOS Image Sensor http://onsemi.com Features • • • • • • • • • • • • • • • • • • • • • • SXGA: 1280 x 1024 Active Pixels 4.8 mm x 4.8 mm Pixel Size

Contextual Info: GBU4A - GBU4M Bridge Rectifiers Features • • • • • Glass passivated junction. Surge overload rating: 150 amperes peak. Reliable low cost construction utilizing molded plastic technique. Ideal for printed circuit board. UL certified, UL # E326243.

Contextual Info: GBU4A - GBU4M Bridge Rectifiers Features • • • • • Glass passivated junction. Surge overload rating: 150 amperes peak. Reliable low cost construction utilizing molded plastic technique. Ideal for printed circuit board. UL certified, UL # E326243.

Contextual Info: GBU4A - GBU4M Bridge Rectifiers Features • Glass-Passivated Junction • Surge Overload Rating: 150 A Peak • Reliable Low-Cost Construction Utilizing Molded Plastic Technique • Ideal for Printed Circuit Board • UL Certified: UL #E258596 + ~ ~ - GBU

Contextual Info: L99MM70XP Integrated microprocessor driven device intended for LIN controlled exterior mirrors Features • 5 V low-drop voltage regulator 150 mA max. ■ Embedded LIN transceiver: 2.0/2.1 compliant and SAEJ2602 compatible ■ Independent control of mirror adjustment

FCP7N60

Abstract: FCPF7N60 FCPF7N60YDTU
Contextual Info: SuperFET TM FCP7N60/FCPF7N60/FCPF7N60YDTU Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and

Fairchild UL file

Abstract: E111753
Contextual Info: GBU4A - GBU4M Bridge Rectifiers Features • Glass passivated junction. • Surge overload rating: 150 amperes peak. • Reliable low cost construction utilizing molded plastic technique. • Ideal for printed circuit board. • UL certified, UL #E111753, UL # E326243.

FCP7N60

Abstract: FCPF7N60 FCPF7N60YDTU
Contextual Info: SuperFET TM FCP7N60/FCPF7N60/FCPF7N60YDTU Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and

CMHS1

Abstract: L99MM70XP
Contextual Info: L99MM70XP Integrated microprocessor driven device intended for LIN controlled exterior mirrors Features • 5 V low-drop voltage regulator 150 mA max. ■ Embedded LIN transceiver: 2.0/2.1 compliant and SAEJ2602 compatible ■ Independent control of mirror adjustment

Contextual Info: L99MM70XP Integrated microprocessor driven device intended for LIN controlled exterior mirrors Features • 5 V low-drop voltage regulator 150 mA max. ■ Embedded LIN transceiver: 2.0/2.1 compliant and SAEJ2602 compatible ■ Independent control of mirror adjustment

FCA16N60

Abstract: N-Channel mosfet 600v ir
Contextual Info: SuperFET FCA16N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and

mosfet 600V 20A

Abstract: Mosfet 600V, 20A FCB20N60
Contextual Info: TM FCB20N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and

FCP16N60

Abstract: FCp Series
Contextual Info: SuperFET FCP16N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and