1500V CHOPPER Search Results

PLUS247

Abstract: 013009 IXTK8N150L
Contextual Info: Preliminary Technical Information IXTK8N150L IXTX8N150L Linear Power MOSFET w/Extended FBSOA VDSS ID25 = 1500V = 8A Ω < 3.6Ω RDS on N-Channel Enhancement Mode Guaranteed FBSOA TO-264(IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

Contextual Info: Preliminary Technical Information Linear Power MOSFET w/Extended FBSOA VDSS ID25 IXTK8N150L IXTX8N150L = 1500V = 8A Ω < 3.6Ω RDS on N-Channel Enhancement Mode Guaranteed FBSOA TO-264(IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

IXTH2N150L

Abstract: IXTH2N150
Contextual Info: Advance Technical Information LinearTM Power MOSFET w/Extended FBSOA IXTH2N150L VDSS ID25 = 1500V = 2A  15  RDS on N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated TO-247 G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C

Contextual Info: Advance Technical Information Linear Power MOSFET With Extended FBSOA IXTK8N150L IXTX8N150L VDSS ID25 = 1500V = 8A Ω = 5.0Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-264(IXTK) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1500

2sc 1091

Contextual Info: ANALOG DEVICES □ FEATURES Functionally Complete Precision Conditioner High Accuracy Low Input Offset Tempco: ±0.1|iV/°C Low Nonlinearity: ±0.025% High CMR: 160dB 60Hz, G=1000V/V High CMV Isolation: 1500V rms Continuous 240V rms Input Protection Small Package: 1.0"x2.rx0.35” DIP

SOT-227B Outline

Abstract: Vdss 1500V IXTN8N150L
Contextual Info: Advance Technical Information Linear Power MOSFET With Extended FBSOA IXTN8N150L VDSS ID25 D N-Channel Enhancement Mode Avalanche Rated = 1500V = 8A Ω = 5.0Ω RDS on G S S miniBLOC, SOT-227 B (IXTN) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C

IXTN8N150L

Contextual Info: IXTN8N150L Linear Power MOSFET w/Extended FBSOA VDSS ID25 RDS on D N-Channel Enhancement Mode Guaranteed FBSOA = 1500V = 7.5A ≤ 3.6Ω Ω G S S miniBLOC, SOT-227 B E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR

IXTN8N150L

Contextual Info: Preliminary Technical Information Linear Power MOSFET w/Extended FBSOA VDSS ID25 IXTN8N150L D N-Channel Enhancement Mode Guaranteed FBSOA = 1500V = 7.5A Ω = 3.6Ω RDS on G S S miniBLOC, SOT-227 B E153432 S Symbol Test Conditions G Maximum Ratings VDSS TJ = 25°C to 150°C

ixtn8n150l

Abstract: 013009 ixtn8n
Contextual Info: Preliminary Technical Information IXTN8N150L Linear Power MOSFET w/Extended FBSOA VDSS ID25 RDS on D N-Channel Enhancement Mode Guaranteed FBSOA = 1500V = 7.5A Ω = 3.6Ω G S S miniBLOC, SOT-227 B E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

DG306AE25

Abstract: DG306AE
Contextual Info: DG306AE25 DG306AE25 Gate Turn-off Thyristor DS4099-5 January 2014 LN31739 APPLICATIONS KEY PARAMETERS 600A ITCM VDRM 2500V 225A IT(AV) dVD/dt 1000V/µs 300A/µs diT/dt • Variable speed A.C. motor drive inverters (VSD-AC) ■ Uninterruptable Power Supplies

DG306AE

Abstract: TGS 2600 100A 1000V thyristor DG306AE25 CS 20A TGS 800 300a 1000v thyristor
Contextual Info: DG306AE25 DG306AE25 Gate Turn-off Thyristor Replaces March 1998 version, DS4089 - 3.2 DS4099-4.0 January 2000 APPLICATIONS KEY PARAMETERS 600A ITCM VDRM 2500V IT AV 225A dVD/dt 1000V/µs diT/dt 300A/µs • Variable speed A.C. motor drive inverters (VSD-AC)

Contextual Info: DG306AE25 DG306AE25 Gate Turn-off Thyristor Replaces March 1998 version, DS4089 - 3.2 DS4099-4.0 January 2000 APPLICATIONS KEY PARAMETERS 600A ITCM VDRM 2500V IT AV 225A dVD/dt 1000V/µs diT/dt 300A/µs • Variable speed A.C. motor drive inverters (VSD-AC)

TGS 2600

Abstract: DG306AE25 300a 1000v thyristor
Contextual Info: DG306AE25 DG306AE25 Gate Turn-off Thyristor Replaces March 1998 version, DS4089 - 3.2 DS4099-4.0 January 2000 APPLICATIONS KEY PARAMETERS 600A ITCM VDRM 2500V IT AV 225A dVD/dt 1000V/µs diT/dt 300A/µs • Variable speed A.C. motor drive inverters (VSD-AC)

Contextual Info: DG306AE25 DG306AE25 Gate Turn-off Thyristor Replaces March 1998 version, DS4089 - 3.2 DS4099-4.0 January 2000 APPLICATIONS KEY PARAMETERS ITCM 600A VDRM 2500V IT AV 225A dVD/dt 1000V/µs diT/dt 300A/µs • Variable speed A.C. motor drive inverters (VSD-AC)

4-20mA to 2-10v ic

Contextual Info: Complete Signal Conditioning I/O Subsystem □ A N A LO G D E V IC E S 3B Series FEATURES/BENEFITS Low Cost, Completely Integrated 16-Channel Modular Signal Conditioning Subsystem Wide Selection of Functionally Complete Input and Output Plug-In Modules Rugged Industrial Chassis, Rack or Surface Mounted

resistance to Current Converter 0-20mA

Abstract: AD591 850il 4-20mA- 0-5 volt converter Voltage to Current Converter 0-20mA 3B13 AD592 3B14 220V AC to 5V DC transformer Voltage to Current Converter dual 4-20mA
Contextual Info: 3B Series I/O Subsystems I_ I Input Module Selection Input Type/Span Voltage Output Current Output Nonisolated Modules Isolated Modules dc, ± lOmV, ± 50m V , ± lOOmV ±10V 4-20mA/0-20mA 3B10 3B30 dc, ± IV , ± 5V + 10V 4-20mA/0-20mA 3B10 3B31

Contextual Info: AUGUST 1995 DG646BH25 DS4092-2.2 DG646BH25 GATE TURN-OFF THYRISTOR APPLICATIONS KEY PARAMETERS 2000A ITCM VDRM 2500V IT AV 867A 1000V/µs dVD/dt diT/dt 300A/µs • Variable speed A.C. motor drive inverters (VSD-AC). ■ Uninterruptable Power Supplies ■ High Voltage Converters.

Contextual Info: GEC P L E S S E Y S i S E M I C O N D U C T O R S DS4092-2.2 DG646BH25 GATE TURN-OFF THYRISTOR APPLICATIONS KEY PARAMETERS 2000A 2500V 867A •t AV dVj/dt 1000V/HS 300A/|iS d lp /d t ■ Variable speed A.C. motor drive inverters (VSD-AC). ■tcm V DRM ■ Uninterruptable Power Supplies

Gate Turn-off 100A 750V

Abstract: DG646BH25 300a 1500v thyristor
Contextual Info: DG646BH25 DG646BH25 Gate Turn-off Thyristor Replaces March 1998 version, DS4092-2.3 DS4092-3.0 January 2000 APPLICATIONS KEY PARAMETERS 2000A ITCM VDRM 2500V IT AV 867A dVD/dt 1000V/µs diT/dt 300A/µs • Variable speed A.C. motor drive inverters (VSD-AC)

Gate Turn-off 100A 750V

Abstract: DG646BH25
Contextual Info: DG646BH25 DG646BH25 Gate Turn-off Thyristor Replaces March 1998 version, DS4092-2.3 DS4092-3.0 January 2000 APPLICATIONS KEY PARAMETERS 2000A ITCM VDRM 2500V IT AV 867A dVD/dt 1000V/µs diT/dt 300A/µs • Variable speed A.C. motor drive inverters (VSD-AC)

QA700

Abstract: QA-700 gate turn-off L20C
Contextual Info: GATE TURN-OFF THYRISTOR SG500JX22 TENTATIVE DATA CHOPPER, INVERTER APPLICATION Unit in mm . Repetitive Peak Off-State Voltage : V d r M=6000V . R.M.S On-State Current 2 - 0 3.6 ± 0 .2 1OMAX : Tt RMS =200A . Peak Turn-Off Current : It GQM=500A . Critical Rate of Rise ofOn-State

GTO 100A 750V

Abstract: DG646BH25 Gate Turn-off 100A 750V AN4506 AN4839
Contextual Info: DG646BH25 DG646BH25 Gate Turn-off Thyristor Replaces March 1998 version, DS4092-2.3 DS4092-3.0 January 2000 APPLICATIONS KEY PARAMETERS 2000A ITCM VDRM 2500V 867A IT AV dVD/dt 1000V/µs 300A/µs diT/dt • Variable speed A.C. motor drive inverters (VSD-AC)

Intelligent Power Module

Abstract: 1200 HVIPM PM1200HCE330-1 pm1200hce
Contextual Info: MITSUBISHI HVIPM PM1200HCE330-1 HIGH POWER SWITCHING USE INSULATED TYPE HVIPM High Voltage Intelligent Power Module PM1200HCE330-1 ● IC . 1200A ● VCES . 3300V

power supply circuit diagram that convert 240v to 5v

Abstract: signal conditioning circuit 4-20 mA DCP5B39
Contextual Info: DCP5B SERIES Compact, Low Cost Modular Signal Conditioners Designed for Laboratory and Industrial Applications Introduction The DCP5B Series represents an innovative generation of low cost, high performance plug-in signal conditioners. Designed for laboratory and in­