1507 1A 60 Search Results

1507 diode

Abstract: s1507
Contextual Info: UF1501/S–UF1507/S Vishay Lite–On Power Semiconductor 1.5A Ultra–Fast Rectifier Features D Diffused junction D Ultra–fast switching for high efficiency D High current capability and low forward voltage DO – 41 drop D Surge overload rating to 50A peak

Contextual Info: International Rectifier • 1,8551,52 DDlbDls b,4a* INR PD" 06 IRLZ44S HEXFET P ow er M O S F E T INTERNATIONAL RECTIFIER • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Logic-Level Gate Drive bSE H ^ dss - 60V • RDS on Specified at Vgs=4V & 5V

Contextual Info: WBULGIN £ Standard Buccaneer # Protects Rear of the Connector Flammability Rating UL94V-0 • Fits Panel Mount Versions only * Gives Extra Support to the Cable • Suitable for 5-7mm and 7-9mm Cable Diameters 1 2 2 3 7 provides additional cable support.

PR1507

Contextual Info: PR1501-PR1507 Fast Recovery Rectifiers VOLTAGE RANGE: 50 - 1000 V CURRENT: 1.5 A DO - 15 Features Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0

PR1501

Abstract: 1504 1A 60
Contextual Info: BL GALAXY ELECTRICAL PR1501-PR1507 VOLTAGE RANGE: 50 - 1000 V CURRENT: 1.5 A FAST RECOVERY RECTIFIER FEATURES DO - 15 Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol

CTC0105

Abstract: UF1501 UF1503 UF1504 UF1505 UF1507
Contextual Info: UF1501 thru UF1507 Compact Technology REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.5 Amperes ULTRA FAST RECTIFIERS DO-15 FEATURES Low cost Diffused junction Ultra fast switching for high efficiency Low reverse leakage current Low forward voltage drop

CTC0106

Abstract: UF1501 UF1503 UF1504 UF1505 UF1507
Contextual Info: UF1501 thru UF1507 Compact Technology REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.5 Amperes ULTRA FAST RECTIFIERS DO-41 FEATURES Low cost Diffused junction Ultra fast switching for high efficiency Low reverse leakage current Low forward voltage drop

1501-50

Abstract: PR1501 PR1507
Contextual Info: PR1501 thru PR1507 Compact Technology REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.5 Amperes FAST RECOVERY RECTIFIERS DO-15 FEATURES Fast switching for high efficiency Low cost Diffused junction Low reverse leakage current Low forward voltage drop

PR1507

Abstract: PR1501
Contextual Info: PR1501 thru PR1507 Compact Technology REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.5 Amperes FAST RECOVERY RECTIFIERS DO-41 FEATURES Fast switching for high efficiency Low cost Diffused junction Low reverse leakage current Low forward voltage drop

2N6256

Abstract: 2N6136 2N6083 A-1489 TRANSISTOR K 1507 2N5944 2N5945 2N5946 2N6080 2N6081
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

1RF9640

Contextual Info: International 111] Rectifier HEXFET Power MOSFET • • • • • • • • MASSMS2 0 0 1 4 ^ 0 6 055 H I N R PD-9.921 IRF9640S INTERNATIONAL RECTIFIER bSE D Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel

Contextual Info: LT1083/LT1084/LT1085 7.5A, 5A, 3A Low Dropout Positive Adjustable Regulator Semiconductor [description i T he LT1083 series of positive adjustable regulators regulator and power source are designed to provide 7.5A, 5A and 3A with conditions. The LT1083/LT1084/LT1085

IRF9640S

Abstract: AN-994 SMD-220
Contextual Info: PD-9.921 International S Rectifier IRF9640S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling ^ d s s - -2 0 0 V ^DS on = 0 . 5 0 0

smd 33a

Abstract: 1RF610 33A SMD DIODE smd diode JJ AN-994 IRF610S SMD-220
Contextual Info: International IS Rectifier PD-9.899 IRF610S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 200V ^ D S o n = 1 -5 ß

UL 1557

Contextual Info: Robinson 50 Mil Connectors Nugent '.ow Profile 2-Piece Connectors — ^P50L Series • Low profile .276" - .472" 7-12mm mated heights to address board stacking applications RN PAK-50 * Eight sizes, 20-120 contacts • High-temp insulator compatible with

AIGT8142

Abstract: AFC8503 K1363 ANM84303CE AIGT8162 ANM832 ANM831 P1512 hj 13005 AFC8503S
Contextual Info: 制御機器2008-2009カタログ訂正のお知らせ • 当社発行のカタログにおいて誤りがございましたので慎んでお詫び 申し上げますと共に、訂正いただきますよう何卒宜しくお願い申し上げます。

FDM6296

Contextual Info: FDM6296 Single N-Channel, Logic-Level, PowerTrench MOSFET Features General Description • 11.5 A, 30 V RDS ON = 10.5 mΩ @ VGS = 10 V RDS(ON) = 15 mΩ @ VGS = 4.5 V ■ Low Qg, Qgd and Rg for efficient switching performance ■ Low Profile – MicroFET 3.3 x 3.3 mm

Contextual Info: FDM6296 Single N-Channel, Logic-Level, PowerTrench MOSFET Features General Description • 11.5 A, 30 V RDS ON = 10.5 mΩ @ VGS = 10 V RDS(ON) = 15 mΩ @ VGS = 4.5 V ■ Low Qg, Qgd and Rg for efficient switching performance ■ Low Profile – MLP 3.3 x 3.3 mm

Contextual Info: FDM6296 Single N-Channel Logic-Level PowerTrench MOSFET 30V,11.5A, 10.5mΩ Features tm General Description ̈ Max rDS on = 10.5mΩ at VGS = 10V, ID = 11.5A This single N-channel MOSFET in the thermally efficient MicroFET package has been specifically designed to perform

FDM6296

Contextual Info: FDM6296 Single N-Channel Logic-Level PowerTrench MOSFET 30V,11.5A, 10.5mΩ Features tm General Description „ Max rDS on = 10.5mΩ at VGS = 10V, ID = 11.5A This single N-channel MOSFET in the thermally efficient MicroFET package has been specifically designed to perform

smd WV1

Abstract: smd diode WV1 smd WV1 15 AN-994 IRF9540S SMD-220 smd diode wv
Contextual Info: PD-9.917 International S Rectifier IRF9540S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Vdss - -100V ^DS on =

DI9945

Contextual Info: DI9945 VISHAY /l i t e w î i I P O W E R S E M IC O N D Ü C T O R DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR I Features High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance

ksd 250v 10a

Abstract: ksd 202 ksd 180 13003 bd ksd 250v ksd 75 bow 94c bdx 44b ksd 250V 5A d5072
Contextual Info: TRANSISTORS FUNCTION GUIDE 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment Package SOT-23 TO-92 TO-92L TO-126 TO-220 Application FM RM AMP KSC2223 Mix Conv KSC2223 Local Ose KSC2223 IF AM Diff. Amp KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715

mj 1504

Abstract: 51a marking til 31a AN-994 IRLZ44S SMD-220 MARKING 51A SMD 51A
Contextual Info: PD-9.906 International Big Rectifier IRLZ44S HEXFET Power M O SFET • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Logic-Level Gate Drive • R D S on Specified at Vgs=4V & 5V • 175°C Operating Temperature • Fast Switching