150A 400V DIODE BRIDGE Search Results

Contextual Info: SENSITRON SEMICONDUCTOR SPM1007 TECHNICAL DATA DATA SHEET 5393, REV. B 1200 VOLT, 29 AMP THREE PHASE SILICON CARBIDE MOSFET BRIDGE WITH SILICON CARBIDE DIODES FEATURES: • 80mΩ typical on-resistance  Low Vf silicon carbide Schottky barrier diode included in parallel with body diode

ic 5056 mv 85

Abstract: GA150TS60U
Contextual Info: PD -5.056 PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK GA150TS60U Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

LM 1709

Abstract: GA150TD120U DT12-6
Contextual Info: PD -5.067 PRELIMINARY GA150TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 1200 V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses

Contextual Info: APT150DL60B2 G 600V 150A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrasoft Recovery Times (trr)

150a 400v diode bridge

Abstract: 6075A
Contextual Info: APT150DL60B2 G 600V 150A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrasoft Recovery Times (trr)

RG2 DIODE

Abstract: GA150TD120U DT12-6
Contextual Info: PD - 5.067A PRELIMINARY GA150TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 1200V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses

Contextual Info: In te rn a tio n a l I«R Rectifier PD -5 .056A PRELIMINARY "HALF-BRIDGE” IGBT INT-A-PAK G A 150T S 6 0 U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V q e s — 600V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

IRF 860

Abstract: 5056B IRF 150a
Contextual Info: , I ,• In ternational I I«R Rectifier PD -5.056B preliminary "HALF-BRIDGE" IGBT INT-A-PAK G A 150TS6 0 U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V ces = 600V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

ge 142

Abstract: lta 301 GA150TS60U
Contextual Info: PD - 50056D GA150TS60U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

tc 317 c

Abstract: 056B GA150TS60U
Contextual Info: PD -5.056B PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK GA150TS60U Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

GA150TS60U

Contextual Info: PD -50056C GA150TS60U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

Contextual Info: International I R Rectifier PD -5.067 PRELIMINARY GA150TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Features V c e s = 1200V • Generation 4 IG B T technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kH z

IQR 336

Abstract: 5056B IOR 336
Contextual Info: International IQR Rectifier "HALF-BRIDGE" IGBT INT-A-PAK PD - 5.056B GA150TS60U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology VcES = 600V • UltraFast: Optimized for high operating frequencies 8-40kHz in hard switching, >200kHz in resonant mode

Contextual Info: APT150DL60B2 G 600V 150A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrasoft Recovery Times (trr)

C82 diode

Abstract: C81 diode
Contextual Info: International IOR Rectifier PD - 5.067A GA150TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V CES= 1200V • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz

SCR bridge 600V "power module"

Abstract: 150a 400v diode bridge SCR Inverter datasheet scr characteristics G150SPBK06P3H VR14 Zener Diodes 300v Bridge diodes G150SPBK06P3
Contextual Info: PD-97398 HiRel TM INT-A-Pak 3, PLASTIC FULL-BRIDGE IGBT MODULE G150SPBK06P3H Product Summary Part Number VCE IC G150SPBK06P3H 600V 150A VCE SAT 2.3V Typ. 2.6V Max. HiRelTM INT-A-Pak 3 The HiRelTM INT-A-Pak series are isolated near hermetic power modules which combine the latest

Contextual Info: PD-97398 HiRel TM INT-A-Pak 3, PLASTIC FULL-BRIDGE IGBT MODULE G150SPBK06P3H Product Summary Part Number VCE IC G150SPBK06P3H 600V 150A VCE SAT 2.3V Typ. 2.6V Max. HiRelTM INT-A-Pak 3 The HiRelTM INT-A-Pak series are isolated near hermetic power modules which combine the latest

PBMB150B12

Contextual Info: IGBT MODULE PBMB150B12 H-Bridge 150A 1200V CIRCUIT OUTLINE DRAWING ３ １ ４ 14 ５ 13 ２ ９ ７ 11 ６ 12 8- fasten- tab No 110 Dimension mm Approximate Weight : 650g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC

150a 400v diode bridge

Abstract: TO-247 Package APT75DL60B R4035
Contextual Info: APT75DL60B G APT75DL60S(G) 600V 75A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode (B) PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrasoft Recovery Times (trr)

Contextual Info: APT75DL60B G APT75DL60S(G) 600V 75A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode (B) PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrasoft Recovery Times (trr)

GA150TS60U

Abstract: 150TS60U
Contextual Info: International 3BSR Rectifi6r preliminary "HALF-BRIDGE" IGBT INT-A-PAK PD'5056 G A 150TS60U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology VcES = 600V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

High-Rel Discrete Semiconductors

Abstract: fast recovery diode 1000v 10A fast recovery diode 400v 5A fast recovery diode 600v 5A IN4954 150a 400v diode bridge diode 50v 5A 3-Phase Full-Wave Bridge Rectifier Zener Diode Glass 50v DIODE RECTIFIER BRIDGE SINGLE 55a 600v
Contextual Info: 2010 Catalog High-Rel Discrete Semiconductors Assembly Products Semtech’s Strategy in Discrete Products is to supply devices, either in axial, surface-mount or custom assembly configurations, that are rugged in design and in packages that are both hermetic and varied

Contextual Info: International IÔR Recti fi 6 f PD -5.05 6B PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK G A 150T S 6 0 U Ultra-Fast Speed IGBT Features • G en eratio n 4 IG BT tech nology V c e s = 600 V • U ltraFast: O ptim ize d for high operating fre q u e n cie s 8 -4 0 kH z In hard sw itching, >200

Contextual Info: Preliminary Data Sheet I27239 12/06 GA75TS120UPbF "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses