154 SILICON DIODE Search Results

Contextual Info: SA 154. SA 160 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter /5 Surface mount diode Fast silicon rectifier diodes SA 154. SA 160  5   0

Contextual Info: ADE-208-154 Z 1SS108 Silicon Schottky Barrier Diode for Various Detector,High Speed Switching HITACHI Features Preliminary Rev. 0 Oct 1993 Outline • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal.

1SS108

Abstract: HITACHI 1SS108 Hitachi DSA0014
Contextual Info: ADE-208-154 Z 1SS108 Silicon Schottky Barrier Diode for Various Detector,High Speed Switching Preliminary Rev. 0 Oct 1993 Features Outline H • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal. 2

SOD-123 marking code 24

Abstract: SOD-123 marking code H3 SOD-123 marking code H5 zener marking code V SOD123 500mW zener sod SOD-123 marking code 1200 marking code T 7 SOD-123 SOD123 MARKING CODE sod123 SOD-123
Contextual Info: MMSZ5221B THRU 500mW SURFACE MOUNT SILICON ZENER DIODES 2.4V ~ 75V MMSZ5267B SOD-123 PACKAGE  500mW Power Dissipation  Zener Voltages from 2.4~75V  Ideally Suited for Automated Assembly Processes  Moisture Sensitivity Level 1 .154 3.90 .130(3.30)

sa diode

Contextual Info: SA 154. SA 160 /5 Surface mount diode Fast silicon rectifier diodes SA 154. SA 160 Forward Current: 1 A Reverse Voltage: 50 to 1000 V  5   0 ;  <  6  <  < - 2-  6  <  < -   : < - /9 7 4  18 7 . * #;2 #

BZT52-C2V4

Abstract: BZT52-C2V7 BZT52-C3 BZT52-C3V3 BZT52-C3V6 BZT52-C3V9 BZT52-C4V3
Contextual Info: BZT52-C2V4 SERIES SURFACE MOUNT SILICON ZENER DIODES 2.4 to 75 Volts POWER 410 mWatts SOD-123 Unit: inch mm FEATURES .154(3.90) .141(3.60) • Planar Die construction .110(2.8) .098(2.5) .028(0.7) .019(0.5) • 410mW Power Dissipation • Zener Voltages from 2.4~75V

Contextual Info: BZT52-C2V4 SERIES SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 2.4 to 75 Volts POWER Unit: inch mm SOD-123 410 mWatts FEATURES .154(3.90) .141(3.60) • Planar Die construction • 410mW Power Dissipation • Zener Voltages from 2.4~75V • Ideally Suited for Automated Assembly Processes

w1 marking SOD 123

Abstract: SOD-123 JEDEC BZT52-C2V4 SOD-123 marking X2 w1 marking SOD-123 ZENER SOD-123 marking X2 W1 SOD-123
Contextual Info: BZT52-C2V4 SERIES SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 2.4 to 75 Volts POWER SOD-123 500 mWatts Unit: inch mm FEATURES .154(3.90) .141(3.60) • Planar Die construction .028(0.7) .019(0.5) • Zener Voltages from 2.4~75V • Ideally Suited for Automated Assembly Processes

Contextual Info: BZT52-C2V4 SERIES SURFACE MOUNT SILICON ZENER DIODES 2.4 to 75 Volts POWER 410 mWatts SOD-123 Unit: inch mm FEATURES .154(3.90) .141(3.60) • Planar Die construction .110(2.8) .098(2.5) .028(0.7) .019(0.5) • 410mW Power Dissipation • Zener Voltages from 2.4~75V

220 SOD-123

Abstract: SOD-123 BZT52-B4V3 BZT52-B4V7 BZT52-B5V1 BZT52-B5V6 BZT52-B6V2 BZT52-B6V8 BZT52-B7V5 BZT52-B8V2
Contextual Info: BZT52-B4V3 SERIES SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 4.3 to 51 Volts POWER 410 mWatts Unit: inch mm SOD-123 FEATURES .154(3.90) .141(3.60) • Planar Die construction • 410mW Power Dissipation • Zener Voltages from 4.3~51V • Ideally Suited for Automated Assembly Processes

Contextual Info: S30445 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current40 @Temp (øC) (Test Condition)154# V(RRM)(V) Rep.Pk.Rev. Voltage450 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.800 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)100 @Temp. (øC) (Test Condition)25#

SA diode

Contextual Info: SA 154. SA 160 /5 Surface mount diode Fast silicon rectifier diodes SA 154. SA 160  5   0 1 3) 4) 18 7 *. /9 7 4  /* 7 4  (.) ) ( / 7 4 .   :   Values Units  < - :   . ;$  . // 7 (  ( * ;  <  6 

Contextual Info: SA 154. SA 160 /5 Surface mount diode Fast silicon rectifier diodes SA 154. SA 160  5   0 1 3) 4) 18 7 *. /9 7 4  /* 7 4  (.) ) ( /* 7 4 .   :   Values Units  < - :   . ;$  . // 7 (  ( * ;  <  6 

SS1030

Contextual Info: SS1030 SCHOTTKY BARRIER DIODE SOD-123 FEATURES Unit: inch mm • General rectification .154(3.90) .141(3.60) • Small power mold type (PMDU) R .110(2.8) .098(2.5) .028(0.7) .019(0.5) • High reliability • Silicon epitaxial planar • In compliance with EU RoHS 2002/95/EC directives

Contextual Info: SSM6J215FE MOSFETs Silicon P-Channel MOS U-MOS SSM6J215FE 1. Applications • Power Management Switches 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 154 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 104 mΩ (max) (@VGS = -1.8 V)

Contextual Info: SSM6J215FE MOSFETs Silicon P-Channel MOS U-MOS SSM6J215FE 1. Applications • Power Management Switches 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 154 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 104 mΩ (max) (@VGS = -1.8 V)

74LS154

Abstract: circuit diagram of 74ls154 G1.L 74LS154 truth table decoder 74LS154 pin diagram of 74ls154 M24B MM74HC154 MM74HC154MTC MM74HC154N
Contextual Info: s e m ic o n d u c t o r Revised February 1999 MM74HC154 4-to-16 Line Decoder General Description T he M M 74H C 154 d ecoder utilizes advanced silicon-gate C M O S technology, and is well suited to m em ory address decoding or d ata routing applications. It possesses high

"Microwave Diodes"

Abstract: barrier varactor
Contextual Info: Winter 2000 Issue Article High Performance Surface Mount Diode Technology for Microwave Wireless System Applications In recent years we have seen an enormous increase in the demand for discrete RF silicon semiconductors suitable for surface mount assembly.

Contextual Info: SIEMENS Silicon Schottky Diodes BAT 15- . 2 R • Beam lead technology • Low dimension • High performance • Low barrier ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BAT 15-022 R - Q62702-D1265

GBU 08

Abstract: gbu08 gbu BRIDGE RECTIFIER bridge diode 6A
Contextual Info: Bulletin I2718 rev. E 05/02 6GBU Series 6.0 Amps Single Phase Full Wave Bridge Rectifier Features Diode chips are glass passivated Suitable for Universal hole mounting IO AV = 6A VRRM = 50/ 800V Easy to assemble & install on P.C.B. High Surge Current Capability

DIODE RECTIFIER BRIDGE SINGLE

Abstract: full wave bridge rectifier 6GBU Series
Contextual Info: Preliminary Data Sheet I2718 rev. C 06/01 6GBU Series 6.0 Amps Single Phase Full Wave Bridge Rectifier Features IO AV = 6A VRRM = 50/ 800V Diode chips are glass passivated Suitable for Universal hole mounting Easy to assemble & install on P.C.B. High Surge Current Capability

GBU 08

Abstract: D0801
Contextual Info: Preliminary Data Sheet I2718 rev. D 08/01 6GBU Series 6.0 Amps Single Phase Full Wave Bridge Rectifier Features Diode chips are glass passivated Suitable for Universal hole mounting Easy to assemble & install on P.C.B. High Surge Current Capability High Isolation between terminals and molded case 1500 VRMS

GBU 08

Abstract: bridge diode 6A
Contextual Info: PART OBSOLETE - EOL18 Bulletin I2718 rev. E 05/02 6GBU Series 6.0 Amps Single Phase Full Wave Bridge Rectifier Features Diode chips are glass passivated IO AV = 6A VRRM = 50/ 800V Suitable for Universal hole mounting Easy to assemble & install on P.C.B. High Surge Current Capability

Q62702-B328

Abstract: siemens 153 marking CE diode diode MARKING CE
Contextual Info: BB 804 Silicon Dual Tuning Diode Application in FM tuners Monolithic chip with common cathode for perfect tracking of both diodes Uniform “ square law" C-V characteristics Ideal hifi tuning device when used in low distortion back-to-back configuration Available in capacitance subgroups1 for convenient tuner alignment