1550NM 10MW PHOTO DIODE Search Results
1550NM 10MW PHOTO DIODE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CEZ6V8 |
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Zener Diode, 6.8 V, ESC |
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CUZ8V2 |
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Zener Diode, 8.2 V, USC |
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CUZ12V |
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Zener Diode, 12 V, USC |
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MUZ5V6 |
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Zener Diode, 5.6 V, USM |
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CEZ6V2 |
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Zener Diode, 6.2 V, ESC |
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1550NM 10MW PHOTO DIODE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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1550nm photo diode for 10GbpsContextual Info: Obsolete Product – not recommended for new design MXP4005 – 12.7 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP400X series of photo diodes are currently offered in die form allowing manufacturers the |
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MXP4005 1310nm 1550nm MXP400X 1550nm 1430nm 1550nm photo diode for 10Gbps | |
Contextual Info: MXP4001 – 622 Mbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively |
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MXP4001 MXP4000 MXP400X 00E-11 MXP4000 00E-12 MXP4002 MXP4003 00E-13 | |
construction of photo diode
Abstract: MXP4000 MXP4001 MXP4002 MXP4003 IR PHOTO DIODE amplifier 1550nm 10mW photo diode
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MXP4001 MXP4000 MXP400X 00E-11 MXP4000 00E-12 MXP4002 MXP4003 00E-13 construction of photo diode MXP4001 MXP4002 MXP4003 IR PHOTO DIODE amplifier 1550nm 10mW photo diode | |
1550nm photo diode for 10Gbps
Abstract: construction of photo diode MXP4005 1550nm catv receiver MXP4003 IR PHOTO DIODE amplifier 1550nm optical device 1550nm 10mW photo diode
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MXP4005 MXP400X 12GHz 1310nm 1550nm 1550nm 1430nm 1550nm photo diode for 10Gbps construction of photo diode MXP4005 1550nm catv receiver MXP4003 IR PHOTO DIODE amplifier 1550nm optical device 1550nm 10mW photo diode | |
photo diode
Abstract: MXP4003 photo diode 10 Gbps pin photo diode MXP4000 sdh microsemi photo diode pin 10 Gbps "Photo Diode" construction of photo diode 1550nm 10mW photo diode
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MXP4003 MXP4000 1310nm 1550nm MXP4003 photo diode photo diode 10 Gbps pin photo diode sdh microsemi photo diode pin 10 Gbps "Photo Diode" construction of photo diode 1550nm 10mW photo diode | |
1550nm photo diode for 10Gbps
Abstract: MXP4003 MXP4005
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MXP4005 MXP400X 12GHz 1550nm 508um 1430nm 1550nm 1550nm photo diode for 10Gbps MXP4003 MXP4005 | |
25umContextual Info: MXP4003 – 10 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. The MXP4000 series of photo diodes |
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MXP4003 1310nm 1550nm MXP4000 1550nm 1430nm MXP4003 25um | |
1550nm catv receiver
Abstract: MXP4000 MXP4001 MXP4002 MXP4003 1430nm
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MXP4003 MXP4000 PI714-893-2570 MXP400X 00E-11 MXP4000 MXP4001 00E-12 MXP4002 1550nm catv receiver MXP4001 MXP4002 MXP4003 1430nm | |
construction of photo diode
Abstract: MXP4000 MXP4001 MXP4002 MXP4003 PHOTO diode
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MXP4001 MXP400x 1310nm 1550nm 00E-11 MXP4000 00E-12 construction of photo diode MXP4000 MXP4001 MXP4002 MXP4003 PHOTO diode | |
Contextual Info: MXP4003 – 10 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCT SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. The MXP4000 series of photo diodes |
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MXP4003 MXP4000 1430nm 1550nm MXP4003 | |
Contextual Info: MXP4000 – Monitor InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The MXP4000 large active area and low dark current make it ideal for laser diode power monitoring applications. The device series offers superior noise |
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MXP4000 1310nm 1550nm MXP4000 MXP400x 00E-11 00E-12 | |
ED 08 diode
Abstract: ED 03 Diode
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MXP4003 1310nm 1550nm dev61 MXP4003 ED 08 diode ED 03 Diode | |
MXP4000
Abstract: MXP4001 MXP4002 MXP4003 laser diode 10mw 1550nm construction of photo diode MXP400X
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MXP4000 MXP400x 1310nm 1550nm MXP4001 00E-12 MXP4002 MXP4000 MXP4001 MXP4002 MXP4003 laser diode 10mw 1550nm construction of photo diode | |
diode ed 85
Abstract: DIODE ED 11 1430nm ED 08 diode
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MXP4000 508um 1310nm 1550nm MXP400X 00E-11 MXP4000 MXP4001 MXP4002 diode ed 85 DIODE ED 11 1430nm ED 08 diode | |
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DIODE ED
Abstract: DIODE ED 11 ED 08 diode
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MXP4001 508um 1310nm 1550nm MXP400X 00E-11 MXP4000 MXP4001 MXP4002 DIODE ED DIODE ED 11 ED 08 diode | |
650nm laser diode 200mw
Abstract: FU-456RDF laser diode DVD 300mw FU-357RPP laser FP TO-CAN for SFP SIRIO FU-357RPA laser DFB 1550nm 10mW PD8XX10 ML7XX46
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350mW 650nm 1600nm H-CR606-G KI-0608 650nm laser diode 200mw FU-456RDF laser diode DVD 300mw FU-357RPP laser FP TO-CAN for SFP SIRIO FU-357RPA laser DFB 1550nm 10mW PD8XX10 ML7XX46 | |
FU-456RDF
Abstract: ML9XX46 laser diode DVD 300mw FU-357RPA 650nm laser diode 200mw ML7XX46 APD 10gbps 1550nm Laser Diode with butterfly pin package sirio FU-68SDF-V3M series
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350mW 650nm 1600nm H-CT606-J KI-0807 FU-456RDF ML9XX46 laser diode DVD 300mw FU-357RPA 650nm laser diode 200mw ML7XX46 APD 10gbps 1550nm Laser Diode with butterfly pin package sirio FU-68SDF-V3M series | |
Contextual Info: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively |
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MXP4002 MXP4000 MXP400X 00E-11 MXP4000 MXP4001 00E-12 MXP4003 | |
MXP4002
Abstract: PHOTO diode
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MXP4002 1310nm 1550nm MXP4000 1550nm MXP4002 PHOTO diode | |
PIN PHOTO DIODE
Abstract: "Photo Diode" photo diode construction of photo diode MXP4002 IR PHOTO DIODE amplifier MXP4000
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MXP4002 MXP4000 1310nm 1550nm MXP4002 PIN PHOTO DIODE "Photo Diode" photo diode construction of photo diode IR PHOTO DIODE amplifier | |
Contextual Info: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively |
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MXP4002 MXP4000 1550nm MXP4002 | |
construction of photo diode
Abstract: MXP4001 MXP4003 MXP4000 MXP4002 PHOTO diode
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MXP4002 MXP4000 MXP400X 00E-11 MXP4000 MXP4001 00E-12 MXP4003 construction of photo diode MXP4001 MXP4003 MXP4002 PHOTO diode | |
Contextual Info: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCT SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively |
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MXP4002 MXP4000 p50nm MXP4002 | |
DIODE ED 16
Abstract: ED 08 diode
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MXP4002 1310nm 1550nm MXP4002 DIODE ED 16 ED 08 diode |