1550NM PHOTODIODE 1.6 GHZ Search Results

Contextual Info: LX3051 3.125 Gbps TM Coplanar InGaAs/InP PIN Photo Diode PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION gurations including traditional wirebond or flip chip assembly This device is ideal for manufacturers of optical receivers, transceivers, transponders, optical

VCSEL array, 850nm

Abstract: EML TOSA HFE4381-521 1310nm laser diode for 10Gbps APD 10gbps 1550nm photodiode 1.6 Ghz Diode - LED 1550nm - IR 1550nm TOSA EML VCSEL photodiode 850nm APD
Contextual Info: DATA SHEET 1.25GBPS 850NM VCSEL SC TOSA PACKAGE HFE438X-521 FEATURES: TO-46 tilt window metal can component, prealigned into SC Sleeve Designed for drive currents between 5 and 15 mA Optimized for low dependence of electrical properties over temperature High speed ≥1 GHz

Contextual Info: DATA SHEET 1.25GBPS 850NM VCSEL TO-46 PACKAGE HFE408X-322 FEATURES: Designed for drive currents between 5 and 15 mA Optimized for low dependence of electrical properties over temperature High speed ≥1 GHz Two different laser/ photodiode polarities Attenuating coating also

PIN photodiode responsivity 1550nm 1.1

Abstract: PIN photodiode InGaAs 1550nm PIN Photodiode 1550nm sensitivity photodiode 1550nm 4 Ghz InGaAs Photodiode 1550nm PIN photodiode responsivity 1550nm 2,5 GHz InGaas PIN photodiode flipchip PIN Photodiode 1310nm
Contextual Info: Obsolete Product – not recommended for new design LX3051 3.125 Gbps TM Coplanar InGaAs/InP PIN Photo Diode PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ LX3051 single die Coplanar Waveguide , 50 ohm High Responsivity Low Dark Current

HFE4084-322

Abstract: HFE4083-322 HFE408X-322 APD Arrays 25GBPS 850NM 1550nm photodiode 1.6 Ghz high power 850nm ld laser diode for optical communication HFE4084
Contextual Info: DATA SHEET 1.25GBPS 850NM VCSEL TO-46 PACKAGE HFE408X-322 FEATURES: Designed for drive currents between 5 and 15 mA Optimized for low dependence of electrical properties over temperature High speed ≥1 GHz Two different laser/ photodiode polarities Attenuating coating also

VCSEL array, 850nm

Abstract: 1550nm photodiode 1.6 Ghz 850nm apd 850nm VCSEL application HFE4081-321 multi mode vcsel VCSEL 980nm HFD3081-108 850 nm LED for fiber sensor APD Arrays
Contextual Info: DATA SHEET 1.25GBPS 850NM VCSEL TO-46 PACKAGE HFE408X-321 FEATURES: Designed for drive currents between 5 and 15 mA Optimized for low dependence of electrical properties over temperature High speed ≥1 GHz Two different laser/ photodiode polarities Attenuating coating

Contextual Info: DATA SHEET 1.25GBPS 850NM VCSEL TO-46 PACKAGE HFE408X-322 FEATURES: Designed for drive currents between 5 and 15 mA Optimized for low dependence of electrical properties over temperature High speed ≥1 GHz Two different laser/ photodiode polarities Attenuating coating also

Contextual Info: DATA SHEET 1.25GBPS 850NM VCSEL SC TOSA PACKAGE HFE438X-521 FEATURES: TO-46 tilt window metal can component, prealigned into SC Sleeve Designed for drive currents between 5 and 15 mA Optimized for low dependence of electrical properties over temperature High speed ≥1 GHz

Contextual Info: DATA SHEET 1.25GBPS 850NM VCSEL TO-46 PACKAGE HFE408X-321 FEATURES: Designed for drive currents between 5 and 15 mA Optimized for low dependence of electrical properties over temperature High speed ≥1 GHz Two different laser/ photodiode polarities Attenuating coating

Contextual Info: DATA SHEET 1.25GBPS 850NM VCSEL TO-46 PACKAGE HFE408X-321 FEATURES: Designed for drive currents between 5 and 15 mA Optimized for low dependence of electrical properties over temperature High speed ≥1 GHz Two different laser/ photodiode polarities Attenuating coating

SPV3313-QJ

Abstract: 1550nm catv receiver HUW9623150-01I SPV3313-CJ SPV3313-CN SPV3313-QN SPV3313-XJ SPV3313-XN SPV3315-CJ SPV3315-CN
Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SPV3310 Series HUW9623150-01I July 23, 2001 Technical Specification of Long Wavelength PIN Photodiode Module for Wide Frequency-range CATV Receiver SPV3310 Series Page 1 of 7 Sumitomo Electric Industries, Ltd.

InGaAs Photodiode 1550nm

Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SPV3210 Series HUW0424106-01A September 29, 2004 Preliminary Specification of Long Wavelength PIN Photodiode Module for Wide Frequency-range CATV Receiver SPV3210 Series Page 1 of 7

Contextual Info: DATA SHEET 1.25GBPS 850NM VCSEL TO-46 BALL LENS PACKAGE HFE4085-521 FEATURES: Designed for drive currents between 5 and 15 mA Optimized for low dependence of electrical properties over temperature High speed ≥1 GHz Packaged with a photodetector The HFE4085-521 is a high radiance VCSEL designed to convert electrical

XL Photonics

Abstract: photo-diode bias InGaAs apd photodiode XPD0250CT-003 2.5G APD 25gbps pin-tia PIN-TIA InGaAs PIN photodiode Long Wavelength 2.6 InGaAs Photodiode 1550nm PIN Photodiode 1550nm sensitivity
Contextual Info: 2.5 Gbps PIN-TIA module XPD0250CT-003 FEATURES Wide dynamic range, typically 2 µW to 1.6 mW p-p Automatic Gain Controlled Differential transimpedance of 3.5 ㏀ Bandwidth from DC to 2.1 GHz Differential outputs Single supply voltage 3.3 V Remains linear up to 50 µW (p-p) input power(unclipped)

Contextual Info: DATA SHEET 1.25GBPS 850NM VCSEL TO-46 BALL LENS PACKAGE HFE4085-521 FEATURES: Designed for drive currents between 5 and 15 mA Optimized for low dependence of electrical properties over temperature High speed ≥1 GHz Packaged with a photodetector The HFE4085-521 is a high radiance VCSEL designed to convert electrical

Contextual Info: DATA SHEET 1.25GBPS 850NM VCSEL TO-46 BALL LENS PACKAGE HFE4085-521 FEATURES: Designed for drive currents between 5 and 15 mA Optimized for low dependence of electrical properties over temperature High speed ≥1 GHz Packaged with a photodetector The HFE4085-521 is a high radiance VCSEL designed to convert electrical

SPV3210

Abstract: SPV3213-QN PIN Photodiode 1550nm 1550nm catv receiver 1550nm photodiode 1.6 Ghz HUW0424106-01C Sumitomo 1000 InGaAs Photodiode 1550nm
Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SPV3210 Series HUW0424106-01C February 29, 2008 Technical Specification of Long Wavelength PIN Photodiode Module for Wide Frequency-range CATV Receiver SPV3210 Series RoHS Compliant

InGaAs Photodiode 1550nm

Contextual Info: MITSUBISHI LASER DIODES PD8XX3 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME FEATURES DESCRIPTION PD8XX3 series are InGaAs avalanche photodiode which has • d>35 /i m active diameter a • L o w noise s e n s itiv e receiving the a re a of <t>35^m , light having

1550nm photodiode 5 Ghz

Abstract: 1550nm photodiode 1.6 Ghz avalanche 1550nm photodiode 5 Ghz cd photo diode avalanche photodiode 1550nm InGaAs Photodiode 1550nm 1550nm photodiode 8 Ghz PIN Photodiode 1550nm PIN Photodiode 1550nm 4 ghz PD8933
Contextual Info: MITSUBISHI LASER DIODES PD8XX3 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME DESCRIPTION FEATURES PD8XX3 series are InGaAs avalanche photodiode which has • 035 a • L o w noise s e n s itiv e receiving the area of 035 light having fim , PD 8X X 3 a wavelength

TAP4NN3

Abstract: ITU-T G.651 Analog Photodiode, 1550nm, TBP4NN3 PIN photodiode responsivity 1550nm 1.1 G651 photodiode 1550nm pigtailed 1550nm photodiode 5 Ghz PIN photodiode 5ghz pigtailed
Contextual Info: Pigtailed PD for analog application TAP4NN3 series Long wavelength InGaAs PIN-PD Detection wavelength range of 1.1µm to 1.6µm SMF or MMF Pigtailed SC, FC, ST, or LC Connector Family Model TAP4NN3 TZP4NN3 TBP4NN3 Features InGaAs long wavelength PIN photodiode

Contextual Info: MITSUBISHI LASER DIODES PD8XX3 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME DESCRIPTION FEATURES PD8XX3 series are InGaAs avalanche photodiode which has • <t>35^m active diameter a • L o w noise s e n s itiv e receiving the a re a of <t>35^m , light having

LX3051

Abstract: InGaAs P InGaAs Photodiode 1550nm photodiode sensitivity 1550nm 2 InGaas PIN photodiode chip
Contextual Info: LX3051 3.125 Gbps Coplanar InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRELIMINARY DATA SHEET KEY FEATURES DESCRIPTION The device series offers impedance matched coplanar waveguide structure for high performance and sensitivity. The LX3051 3 Gbps coplanar

FP-1310-5I-100SMF-SCUPC

Abstract: LED 1310 nm fiber coupled FP131 1550nm DFB laser diode for 10Gbps to56 1550nm laser diode for 10Gbps laser diode 1310 nm fiber coupled 1310 vcsel 1550nm photodiode 5 Ghz inalgaas 1310
Contextual Info: Preliminary DATA SHEET 1310 NM FABRY-PEROT FP LASER DIODE PIGTAILED PACKAGE FP-1310-5I-XXX FEATURES: Wide operating temperature (-40°C to 85°C) Stable threshold current for easy transmitter control (T0 ~ 80K) 1310 nm typical emission wavelength FP-LDs

1550nm VCSEL

Abstract: InGaAs Photodiode 1550nm photodiode sensitivity 1550nm 2
Contextual Info: LX3051 3.125 Gbps Coplanar InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRELIMINARY DATA SHEET KEY FEATURES DESCRIPTION The device series offers impedance matched coplanar waveguide structure for high performance and sensitivity. The LX3051 3 Gbps coplanar