1575-13 TOKO Search Results

1575-13 toko

Abstract: toko 1575-13 840dB TDF2A-1575B-13
Contextual Info: SPECIFICATION OF DIELECTRIC TOKO P/No: 1. OUTLINE FILTER TDF2A-1575B-13 DIMENSION Marking:1575-13 TOKO A=5.2 B=2.0 T=2.25 Tolerance:±0.3 Unit :mm 2. ELECTRICAL CHARACTERISTICS Center Frequency Fo Passband Width Input Output Impedance : 1575.4 MHz : Fo±5.0MHz

1575-13 toko

Abstract: TDF2A-1575B-13A
Contextual Info: RoHS compliant Specification of Dielectric Filter Preliminary Toko P/No. : TDF2A-1575B-13A 1.Outline Dimension Marking:1575-13 TOKO A=5.2 B=2.0 T=2.25 Tolerance:±0.3 Unit :mm 2.Electrical Characteristics Specification Center Frequency(Fo) Passband Width

TDFM1A-1575A-13A

Contextual Info: RoHS compliant Specification of Dielectric Filter Preliminary Toko P/No. : TDFM1A-1575A-13A 1.Outline Dimension 1.8 1.8±0.1 1575 13 0.6 5.4 1.3 4.5 3.7 2.7 2.Electrical Characteristics Center Frequency(Fo) Passband Width Specification 1575.4 MHz : : Fo±

1575-13 toko

Abstract: 0/1575-13 toko
Contextual Info: SPECIFICATION OF DIELECTRIC FILTER TOKO P/No: TDF2A-1575B-13 1. OUTLINE DIMENSION Marking:1575-13 A=5.2 TOKO B=2.0 T=2.25 Tolerance:±0.3 Unit :mm 2. ELECTRICAL CHARACTERISTICS

1575-13 toko

Abstract: TDF2A-1575B-13A
Contextual Info: SPECIFICATION OF DIELECTRIC FILTER TOKO P/No: 1. OUTLINE DIMENSION TDF2A-1575B-13A Marking 5.7 Marking:1575-13 TOKO A= 5 .2 B=2 .0 T=2.25 Tolerance:±0.3 Unit :mm 2. ELECTRICAL CHARACTERISTICS Center Frequency Fo 1575.4 MHz Passband Width Fo±5.0MHz Input Output Impedance

Bluetooth Jammer

Abstract: BAND13 LTE Receiver BGA231L7 gps transmitter block diagram 827mhz murata LTE saw filter
Contextual Info: B GA 23 1L 7 Impro vi ng I mmuni t y of B GA 23 1L7 agains t O ut - Of -B an d J a m me r s LT E Ban d -1 3, G S M85 0/9 00/18 00, U MT S, WLA N Applic atio n N ote A N 273 Revision: Rev. 1.0 2011-09-08 RF and P r otecti on D evic es Edition 2011-09-16 Published by

LTE Receiver

Abstract: AN253 maxim microwave transmitter 10GHz 07104
Contextual Info: B GA 915 N 7 Highl y Lin ear and L ow Nois e A mplif er for Gl obal Na vi gati o n S atelli te S ys te m s G PS/ G L O NA S S/ Gal ileo/ C O M PA S S fr o m 1550 MHz to 1 615 M Hz Appli c ations Applic atio n N ote A N 251 Revision: Rev. 1.3 2011-09-13 RF and P r otecti on D evic es

Contextual Info: B GA 231L 7 Impro vi ng I mmuni t y of B GA 23 1L7 agains t O ut - Of -B an d J a m me r s LT E Ban d -1 3, G S M85 0/9 00/18 00, U MT S, WLA N Us ing Seri es No tc hes Applic atio n N ote A N 276 Revision: Rev. 1.0 2011-09-08 RF and P r otecti on D evic es

k 513

Abstract: MOBILE PHONE AMPLIFIER michael hiebel fundamentals of vector analysis bfp640f BFP620 applications note gps trimble transistor bf 179 Miteq MTA-100 AN179
Contextual Info: BF P640 F AN179 High Gain , Hi gh IP3 GPS L NA using BF P640 F Si Ge: C Transisto r Applic atio n Note Revision: Rev 1.2, 2010.02.16 RF and Protecti on Devi c es Edition 2010.02.16 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG

MCR03*J102

Abstract: CL10B104KONC MCR03*J102 resistor sige an-061 LL1608-FS39NJ SGA-8343 MCH185A2R2C AN-044
Contextual Info: Design Application Note - AN-061 SGA-8343 GPS Application Circuits Abstract Sirenza Microdevices’ SGA-8343 is a high performance SiGe amplifier designed for operation from DC to 6 GHz. This application note illustrates application circuits for GPS Global Positioning System frequency band (1575 MHz). The first application circuit

GLONASS chip

Abstract: BGM1043 GLOBAL NAVIGATION 3000 BGM1043N7 l1 l2 gps antenna schematic AN287 lte tranceiver 1800MHz
Contextual Info: B G M10 43 N7 Fron t - End Modul e f or Glo bal Na vig atio n Sat ellite S yste ms G NS S A p plic atio ns with hig he r LT E Ban d -13 rej ec tion Applic atio n N ote A N 287 Revision: Rev. 1.0 2012-06-19 RF and P r otecti on D evic es Edition 2012-06-27

BGM1043

Abstract: GLOBAL NAVIGATION 3000 BGM1043N7 LNA bluetooth lte tranceiver 1800MHz
Contextual Info: B G M10 43 N7 Low -N ois e Fr ont -E nd Mo dule for G loba l Na vig atio n S atelli te S ys te m s G N SS Applic atio n Usi ng H igh - Q Ind uc tors Applic atio n N ote A N 283 Revision: Rev. 1.0 2012-04-10 RF and P r otecti on D evic es Edition 2012-04-10

BGM1043N7

Abstract: BGM1043 GLOBAL NAVIGATION 3000 bluetooth based positioning system block diagram M120319 omnivision EVALUATION BOARD gps m 89 pin configuration lte tranceiver 1800MHz
Contextual Info: B G M10 43 N7 Low -N ois e Fr ont -E nd Mo dule for G loba l Na vig atio n S atelli te S ys te m s G N SS Applic atio n Usi ng 0 201 Co m p onents Applic atio n N ote A N 286 Revision: Rev. 1.0 2012-06-27 RF and P r otecti on D evic es Edition 2012-06-27

GLOBAL NAVIGATION 3000

Abstract: BGM1043 BGM1043N7 BGM1032N7 AN-294 schematic diagram receiver data circuit satellite
Contextual Info: B G M10 43 N7 Fron t - End Modul e f or Glo bal Na vig atio n Sat ellite S yste ms G NS S A p plic atio ns with hig he r LT E Ban d -13 rej ec tion us ing 0402 c o mpone nts Applic atio n N ote A N 294 Revision: Rev. 1.0 2012-07-23 RF and P r otecti on D evic es

BGM1044N7

Abstract: GLOBAL NAVIGATION 3000 GPS GLONASS Antenna antenna mm size GLONASS chip
Contextual Info: B G M10 44 N7 Low -N ois e Hi gh - G a in Fr ont -E nd Mo dule for Gl obal Na vi gati o n S atelli te S ys te m s G N SS A pplicati on Us in g Hi gh - Q Induc t ors Applic atio n N ote A N 282 Revision: Rev. 1.0 2012-04-04 RF and P r otecti on D evic es

ATF-10736

Abstract: AN-G005 ATF10236 ATF-10236 ATF10136 ATF-10136 HP346A MSA-0686 TK11650U TL05
Contextual Info: Using the ATF-10236 in Low Noise Amplifier Applications in␣ the UHF through 1.7 GHz Frequency Range Application Note 1076 Introduction GaAs FET devices are typically used in low-noise amplifiers in the microwave frequency region where silicon transistors can’t

qfn-12

Abstract: cdm 12.1 laser MC13820 QFN12 IP3 BOOST
Contextual Info: Freescale Semiconductor, Inc. Technical Data MC13820/D Rev. 0, 06/2004 MC13820 Low Noise Amplifier with Bypass Switch Freescale Semiconductor, Inc. Package Information Plastic Package Case 1345 QFN-12 Ordering Information Device Marking Package MC13820

M513

Abstract: MAAL-008550 MAAL-008550-000000 MAAL-008550-001SMB MAAL-008550-TR3000
Contextual Info: MAAL-008550 Low Noise Amplifier 0.5 - 3.0 GHz M/A-COM Products Rev. V1 Functional Schematic Features • • • • • • • Low Noise Figure: 0.75 dB at 2.3 GHz Single +3 to +5 V Supply Voltage Low Current: 7.5 mA typical Lead-Free SC70-6LD 100% Matte Tin Plating over Copper

Contextual Info: MAAL-008550 Low Noise Amplifier 0.5 - 3.0 GHz M/A-COM Products Rev. V2 Functional Schematic Features • • • • • • • Low Noise Figure: 0.75 dB at 2.3 GHz Single +3 to +5 V Supply Voltage Low Current: 7.5 mA typical Lead-Free SC70-6LD 100% Matte Tin Plating over Copper

1575-24

Abstract: BPF640 bfp640f Texas Instruments 4100 GPS BFP640FESD gsm mobile jammer mobile jammer mobile signal jammer AN194 BPF640FESD
Contextual Info: BFP640FESD LNA BFP640FESD for GPS 1575MHz A pplication A pplication Note AN194 Revision: Rev. 1.0 2010-03-09 RF and Protection Devices Edition 2010-03-09 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.

ATF10236

Abstract: FET K 2611 TRANSISTOR BD 137-10 AGILENT 9988 microstripline ATF-10136 transistor equivalent 2274 table chart ATF-10736 HP346A MSA-0686
Contextual Info: Using the ATF-10236 in Low Noise Amplifier Applications in the UHF Through 1.7 GHz Frequency Range Application Note 1076 Introduction GaAs FET devices are typically used in low-noise amplifiers in the microwave frequency region where silicon transistors can’t

mobile phone jammer schematic

Abstract: advantages of mobile signal jammer circuit mobile jammer circuit BGM781N11 BGM781 mobile phone jammer mobile signal jammer AN184 murata gps BGA715L7
Contextual Info: B G M 7 8 1N 1 1 AN184 Co mp act and Hig h Performan c e Fron t-End Modul e f or GPS Applic atio ns Applic atio n Note Revision: 1.0, 16/11/2009 RF and Protecti on Devi c es Edition 2009.11.16 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG

atmel 708

Abstract: ATR0610 atmel 924 74 7899 ic 5304 ATMEL 736 atmel 628 155-8-1 NF 948 ATR0610-PQQ
Contextual Info: Features • • • • • • Low Noise Figure High Small Signal Gain Single +2.7 V Operation Power-up Control 50 Ω Output Unconditionally Stable • Low Power Consumption < 10 mW • Very Small, PLLP6 Package 1.6 mm x 2.0 mm • Few External Components

4dfb-2450t-10

Abstract: 4DFB-1960L-10 4DFB-899A-10 4DFB-915E-10 35-140 157350 4DFB-914A-10 4DFB-1542G-10 4DFB-1842N-10 4DFB-2442P-10
Contextual Info: Sheet1 Measurement values: Passband Insertion Loss Passband Ripple Passband V.S.W.R. Attenuation at 882.5MHz at 947.5MHz 4DFB-915E-10 1.84dB Max. 0.45dB 1.39 Max. 16.9dB 16.8dB STANDARD DEVICES SELECTION GUIDE The Part Numbers shown in the table below are standard devices which are