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    15CC DIODE Search Results

    15CC DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    15CC DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: P4C423 HIGH SPEED 256 x 4 STATIC CMOS RAM FEATURES Separate I/O High Speed Equal Access and Cycle Times – 10/12/15/20/25/35 ns (Commercial) – 15/20/25/35 ns (Military) Fully TTL Compatible Inputs and Outputs Resistant to single event upset and latchup


    Original     		PDF P4C423 24-pin P4C423 024-bit MIL-STD-883, SRAM108 SRAM108

    p4c423

    Abstract: P4C422
    Text: P4C423 HIGH SPEED 256 x 4 STATIC CMOS RAM FEATURES Separate I/O High Speed Equal Access and Cycle Times – 10/12/15/20/25/35 ns (Commercial) – 15/20/25/35 ns (Military) Fully TTL Compatible Inputs and Outputs Resistant to single event upset and latchup


    Original     		PDF P4C423 24-pin P4C423 024-bit MIL-STD-883, SRAM108 SRAM108 P4C422

    Untitled

    Abstract: No abstract text available
    Text: SA N S H A ELECTRIC MFG CO 37E 7TR1E43 D QQ00071 1 i SEN J _T z'i'cn DIODE MODULE SanRex Pow er Diode Module D F 40 A A is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electrically isolated from semiconductor


    OCR Scan     		PDF 7TR1E43 QQ00071 40Amp DF40AA 0000Q72

    1.5 j63

    Abstract: No abstract text available
    Text: 5-5. Schottky Barrier Diodes •Surface Mount Type Maximum Ratings Absolute Maximum Ratings Type No V rm IF.AV IfSW VI (A) (A) V Tstg <X) Electrical Characteristics Ir V f (V) H 'lfl (mA) (mA) fig-I f Ta-tl00C No .W is e r m u per max per etemem eJenient tiereem


    OCR Scan     		PDF FPA-51 Ta-tl00C -1004B -406B 1.5 j63

    diode A28

    Abstract: ma 7050 G952
    Text: MICRO QUALITY / SEMICONDUCTOR. INC 70 Amp HV Schottky Rectifier 50, 60, 80, & 100 Volt VRRM 0.86 Volts at lF = 70 Amps Low Leakage at High Temperature High Surge Capability D 0 5 Package DIM. A 6 C D E F G JEDEC Package 203AB formerly DO-5 MILLIMETERS INCHES


    OCR Scan     		PDF 203AB 150-C ESST1VE10AS diode A28 ma 7050 G952

    6v3a

    Abstract: 6v3 tube
    Text: SYLVANIA ®^ J^T engineering data service 6V3A MECHANICAL DATA QUICK REFERENCE DATA B u l b . T - 6 Y2 B a s e . E9-1, Small Button 9-Pin


    OCR Scan     		PDF

    IN4156

    Abstract: MZ2361 IN4157 IN4453
    Text: Microsemi Corp. ' Tho diode e x p e n s SCOTTSDALE, A Z SANTA A N A, CA F o r m o r e i n f o r m a ti o n call: IN4156, IN4157, IN4453, IN4829, IN4830, IN5179 STABISTORS Also, Tight Tolerance MPDIOO thru MPD400A or MZ2360 and MZ2361 602 941-6300 PACKAGE


    OCR Scan     		PDF IN4156, IN4157, IN4453, IN4829, IN4830, IN5179 MPD100 MPD400A MZ2360 MZ2361 IN4156 IN4157 IN4453

    Untitled

    Abstract: No abstract text available
    Text: sim THE RESISTOR PEOPLE THICK FILM TEMPERATURE COMPENSATION RESISTOR Exclusive thick film process -results in a very linear, negative, 300 ppm.' C resistance temperature characteristic Heat conducting ceramic substrate RGT SERIES Digital marking High conductivity plate-on


    OCR Scan     		PDF C/R125Â

    and gate 74LS138

    Abstract: No abstract text available
    Text: PRELIMINARY Semiconductor MM54HCT138/MM74HCT138 3-to-8 Line Decoder General Description This decoder utilizes mtcroCMOS Technology, 3.0 micron silicon gate N-weil CMOS, and are well suited to memory address decoding or data routing applications. Both circuits


    OCR Scan     		PDF MM54HCT138/MM74HCT138 MM54HCT138/MM74HCT138 MM54HCT138/MM74HCT130 74HCT 54HCT and gate 74LS138

    Untitled

    Abstract: No abstract text available
    Text: f j j P E R IC O M PI49FCT807T PI49FCT2807T Fast CMOS Clock Driver Product Features: • G uaranteed low skew: 0.25 ns • Low input capacitance • M inim um duty cycle distortion • 1:10 fanout • High speed: 3.5 ns propagation delay • T T L input and CM O S output com patible


    OCR Scan     		PDF PI49FCT807T PI49FCT2807T PI49FC 2807T PS7008A

    P4C188

    Abstract: P4C188L
    Text: P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS SCRAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply Three-State Outputs TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Produced with PACE Technology Standard Pinout (JEDEC Approved)


    OCR Scan     		PDF P4C188/P4C188L P4C188 P4C188L 22-Pin 24-Pin 22-Ptn P4C188 P4C188L 53625CC -35PC

    Untitled

    Abstract: No abstract text available
    Text: P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS SCRAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply Three-State Outputs TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Produced with PACE Technology Standard Pinout (JEDEC Approved)


    OCR Scan     		PDF P4C188/P4C188L 22-Pin 24-Pin 22-Pln P4C188 P4C188L P4C188 -20CM -20LM

    Untitled

    Abstract: No abstract text available
    Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS SCRAMS à FEATURES • Full CMOS, 6T Cell Data Retention with 2.0V Supply ■ High Speed (Equal Access and Cycle Times) -10/12/15/20/25 ns (Commercial) -15/20/25/35 ns (Military) Separate Data I/O


    OCR Scan     		PDF P4C187/P4C187L P4C187 P4C187L 22-Pin 24-Pin 290x490 -15LM -20CM -20LM

    Untitled

    Abstract: No abstract text available
    Text: P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS SCRAMS FEATURES • Full CMOS, 6T Cell ■ High Speed (Equal Access and Cycle Times) -12/15/20/25 ns (Commercial) - 20/25/35/45/55 ns (Military) ■ Low Power (Commercial/Military) -7 1 5 m W Active-12 /1 5


    OCR Scan     		PDF P4C188/P4C188L Active-12 P4C188 P4C188L P4C188L 22-Pin -24-Pin

    Untitled

    Abstract: No abstract text available
    Text: P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS SCRAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply (P4C188L Military) Three-State Outputs TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Produced with PACE Technology


    OCR Scan     		PDF P4C188/P4C188L P4C188L 22-Pln 24-Pin 22-Pin P4C188 P4C188L

    P4C187

    Abstract: P4C187L
    Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS SCRAMS FEA TU R ES • Full CMOS, 6T Cell Data Retention with 2.0V Supply ■ High Speed (Equal A cce ss and Cycle Times) -10/12/15/20/25 n s (Commercial) -15/20/25/35 n s (Military) Separate Data I/O


    OCR Scan     		PDF P4C187/P4C187L P4C187 P4C187L 22-Pin 24-Pin -12PC -12JC -12CC -12LC -15JC P4C187L

    Linear Regulator sot-89-5

    Abstract: T9T marking marking parade B535 TK11217 CIN001 1-12xx
    Text: : i» ? i.TKKL2xxBiTKll 3xxB T A G E R EG U LA TO R WITH ON/OFF SWITCH APPLICATIONS Voltage- Precision ±60m V Built-in on/off Control 0.1 at ±2% or n A Max off tim e * Battery Powered *Cellular Telephones * Personal System s Com m unications Equipment current


    OCR Scan     		PDF TK112xxB, TK113xxB, OT23L) OT-89-5 TK113XX4554-2837 Linear Regulator sot-89-5 T9T marking marking parade B535 TK11217 CIN001 1-12xx

    GG01

    Abstract: P4C188 P4C188L VIEW19
    Text: PERFORMANCE SE MICONDUCTOR SOE » • T O b S S 1!? DODlflSD 52T « P S C P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS SCRAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply (P4C188L Military) Three-State Outputs TTL/CMOS Compatible Outputs


    OCR Scan     		PDF P4C188/P4C188L P4C188 P4C188L P4C188L 22-Pin 24-Pin 3IL-STD-883 VIEW19 GG01

    Untitled

    Abstract: No abstract text available
    Text: PERFORMANCE SEMICO NDU CTOR SOE D • 70^25^7 Q00QST5 5 P4G187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS SCRAMS T - % - X l - 0 5 :- FEATURES Full CM O S, 6T Cell ■ Data Retention w ith 2.0V Supply High Speed (Equal Access and Cycle Tim es)


    OCR Scan     		PDF Q00QST5 P4G187/P4C187L P4C187 P4C187L -12PC -12JC -12CC -12LC -15PC -15JC

    sem 2105

    Abstract: No abstract text available
    Text: PERFORMANCE SEMICONDUCTOR 20E J> • 70^55^7 OOOOt.51 2 ■ T -V 6 -3 M O P4C1982/P4C1982L, P4C1981 /P4C1981L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS A -


    OCR Scan     		PDF P4C1982/P4C1982L, P4C1981 /P4C1981L P4C1981/L P4C1982/L -15PC -15JC -15CC -15LC -17PC sem 2105

    Untitled

    Abstract: No abstract text available
    Text: P E R F O R MA N C E SEMI CONDUCTOR 20E D • 7 Q t 5 S =]7 OODObQ3 P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS SCRAMS r - < t b ■ # 3 - > jA FEATURES Full CM OS, 6T Cell High Speed (Equal Access and Cycle Tim es} -1 5 /1 7 /2 0 /2 5 /3 5 ns (Com m ercial)


    OCR Scan     		PDF P4C188/P4C188L P4C188 P4C188L -20CM -20LM -25CM -25LM -35CM -35LM -45CM

    Untitled

    Abstract: No abstract text available
    Text: P4C198/P4C198L, P4C198A/P4C198AL ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS SCRAMS FEATU RES Data Retention, 10 |xA Typical Current from 2.0V P4C198L/198AL (Military) • Full CMOS, 6T Cell High Speed (Equal A ccess and Cycle Times) -12/15/20/25/35 ns (Commercial)


    OCR Scan     		PDF P4C198/P4C198L, P4C198A/P4C198AL P4C198L/198AL P4C198 P4C198A Active-12/15 P4C198/198A -12PC -12JC

    P4C198

    Abstract: P4C198A
    Text: PE R F O R M A N C E SEMICONDUCTOR SÜE D • TDbSS'i? Ü Ü D 1 Û S Ô AID « P S C P4C198/P4C198L, P4C198A/P4C198AL ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS SCRAMS 7^ v 6 ^ 3 - t FEATURES I Data Retention, 10 pA Typical Current from 2.0V P4C198L/198AL (Military)


    OCR Scan     		PDF P4C198/P4C198L, P4C198A/P4C198AL Active-12/15 P4C198/198A P4C198L/198AL P4C198 P4C198A Mil-Bul-103 -12PC P4C198 P4C198A

    Untitled

    Abstract: No abstract text available
    Text: PERFORMANCE SEMICONDUCTOR SQE D • iütaST? aPÜQtll T T - f i-23 - P4C198/P4C198L, P4C198A/P4C198AL ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS SCRAMS À FEATURES ■ Full CMOS, 6T Cell Data Retention, 10 nA Typical Current from 2.0V. ■ High Speed (Equal Access and Cycle Times)


    OCR Scan     		PDF P4C198/P4C198L, P4C198A/P4C198AL P4C198 P4C198A P4C198/198A P4C198L/198AL -15PC -15JC -15CC -15LC