15NOV2007 Search Results

25NM60N

Abstract: 25NM60ND STP25NM60ND 25NM60 stw25nm60nd stw25
Contextual Info: STx25NM60ND N-channel 600 V, 0.13 Ω, 21 A FDmesh II Power MOSFET with fast diode in D2PAK, TO-220FP, TO-220, TO-247 Features TAB VDSS @ TJMAX Type STB25NM60ND STF25NM60ND STP25NM60ND STW25NM60ND RDS(on) max ID 0.16 Ω 21 A 21 A(1) 21 A 21 A 650 V 3 1

TXM RX-3

Abstract: TQFP64 9226
Contextual Info: STM7E1 7 E1 channels switch array Features • Main switches max. RON less than 2 Ω ■ Provides 7 auxiliary switches with RON < 75 Ω ■ 6 VPP amplitude of analog input signal ■ Digital inputs are TTL levels compatible Applications ■ Telecom infrastructure

S3036

Abstract: CDF-AEC-Q100-002 L9951 L9951XP
Contextual Info: L9951 L9951XP Rear door actuator driver Features Type Outputs 1 Ron(2) IOUT VS L9951 L9951XP OUT1 OUT2 OUT3 OUT4 OUT5 150 mΩ 200 mΩ 200 mΩ 800 mΩ 800 mΩ 7.4 A 5A 5A 1.25 A 1.25 A 28 V PowerSO-36 PowerSSO-36 1. See block diagram. 2. Typical values. Applications

JESD97

Abstract: STRH60N20FSY3 25C312
Contextual Info: STRH60N20FSY1 STRH60N20FSY3 N-channel 200V - 0.044Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH60N20FSY1 200V STRH60N20FSY3 200V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge

STRH40N6SY1

Abstract: JESD97 STRH40N6SY3
Contextual Info: STRH40N6SY1 STRH40N6SY3 N-channel 60V - 0.032Ω - SMD-0.5 rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40N6SY1 60 V STRH40N6SY3 60 V 2 1 • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge

JESD97

Abstract: RH40N25FSY1 RH40N25FSY3 STRH40N25FSY1 STRH40N25FSY3
Contextual Info: STRH40N25FSY1 STRH40N25FSY3 N-channel 250V - 0.084Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40N25FSY1 250 V STRH40N25FSY3 250 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardened ■ Low total gate charge

100uF 25V Electrolytic Capacitor

Abstract: ELECTROLYTIC CAPACITOR 100UF 25V LNB power controller with step-up Murata-BL01RN1-A62 D3 1N4001 10uf, 35v electrolytic capacitor
Contextual Info: LNBH23 LNBs supply and control IC with step-up and I²C interface Features • Complete interface between LNB and I²C bus ■ Built-in DC/DC converter for single 12 V supply operation and high efficiency Typ. 93% @ 0.75 A , with integrated NMOS ■ Selectable output current limit by external

motor driver full bridge 5A

Contextual Info: L9951 L9951XP Rear door actuator driver Features Type Outputs 1 Ron(2) IOUT VS L9951 L9951XP OUT1 OUT2 OUT3 OUT4 OUT5 150mΩ 200mΩ 200mΩ 800mΩ 800mΩ 7.4A 5A 5A 1.25A 1.25A 28V PowerSSO-36 PowerSO-36 1. See block diagram. 2. Typical values. Application

PSSO-24

Abstract: PSSO24 100uF 25V Electrolytic Capacitor lnbh231 10uf, 35v electrolytic capacitor
Contextual Info: LNBH23 LNBs supply and control IC with step-up and I²C interface Features • Complete interface between LNB and I²C bus ■ Built-in DC-DC converter for single 12 V supply operation and high efficiency typ. 93% @ 0.75 A , with integrated NMOS ■ Selectable output current limit by external

rfid preamble

Abstract: rfid xrag2 chip antenna rfid UHF 18000-6C UHF rfid antenna UHF RFID READER CRC16 EPCglobal pulse interval encoding
Contextual Info: XRAG2 432-bit UHF, EPCglobal Class1 Generation2 and ISO 18000-6C, contactless memory chip with user memory Features • EPCglobal class 1 generation 2 RFID UHF specification revision 1.0.9 ■ Passive operation (no battery required) ■ UHF carrier frequencies from 860 MHz to

Contextual Info: FST-24.4A-8 Product Details - Tyco Electronics Page 1 of 1 Corporate Home | Electronic Components | Segments | Who We Are FST-24.4A-8 Product Details FLEXSTRIP Jumpers Quick Links Always EU RoHS/ELV Compliant Statement of Compliance Check Pricing & Availability

SN74AUC1G86DBVR

Contextual Info: SN74AUC1G86 SINGLE 2-INPUT EXCLUSIVE-OR GATE www.ti.com SCES389J – MARCH 2002 – REVISED NOVEMBER 2007 FEATURES 1 • Available in the Texas Instruments NanoFree Package • Optimized for 1.8-V Operation and Is 3.6-V I/O Tolerant to Support Mixed-Mode Signal

Contextual Info: SN74AUP1G04 LOW-POWER SINGLE INVERTER GATE www.ti.com SCES571F – JUNE 2004 – REVISED NOVEMBER 2007 FEATURES 1 • Available in the Texas Instruments NanoFree Package • Low Static-Power Consumption ICC = 0.9 µA Max • Low Dynamic-Power Consumption

Contextual Info: STA5620 Fully integrated RF front-end receiver for GPS applications Features • Low IF architecture fIF = 4fO ■ Minimum external components ■ VGA gain internally regulated ■ On chip programmable PLL ■ Typ. 2.7 V supply voltage ■ SPI interface

25NM60ND

Abstract: STW25NM60ND STB25NM60ND STF25NM60ND STI25NM60ND STP25NM60ND
Contextual Info: STx25NM60ND N-channel 600 V, 0.13 Ω, 21 A FDmesh II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features VDSS @ TJMAX Type STB25NM60ND STI25NM60ND STF25NM60ND STP25NM60ND STW25NM60ND RDS on max 650 V ID 3 3 0.16 Ω 1 21 A 21 A 21 A(1) 21 A 21 A

Contextual Info: STG3684A Low voltage 0.5 Ω max dual SPDT switch with break-before-make Features • Ultra low power dissipation: ICC = 0.2 µA max. at TA = 85 °C ■ Low ON resistance VIN = 0 V: – RON = 0.50 Ω (max. TA = 25 °C) at VCC = 4.3 V – RON = 0.50 Ω (max. TA = 25 °C)

VNH3SP30-E

Abstract: VNH3SP30 VNH3SP30TR-E JESD97
Contextual Info: VNH3SP30-E Automotive fully integrated H-bridge motor driver Features Type RDS on Iout Vccmax VNH3SP30-E 45mΩ max (per leg) 30A 40V MultiPowerSO-30 • Output current: 30A ■ 5V logic level compatible inputs ■ Undervoltage and overvoltage shutdown

STW43NM50N

Abstract: 43NM50N
Contextual Info: STW43NM50N N-channel 500 V, 0.070 Ω, 37 A MDmesh II Power MOSFET TO-247 Features Type VDSS @ Tjmax RDS on max ID STW43NM50N 550 V < 0.085 Ω 37 A • 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance 2 3 1

STA5620

Abstract: QFN-32 STA5620TR VFQFPN32
Contextual Info: STA5620 Fully integrated RF front-end receiver for GPS applications Features • Low IF architecture fIF = 4fO ■ Minimum external components ■ VGA gain internally regulated ■ On chip programmable PLL ■ Typ. 2.7 V supply voltage ■ SPI interface

av339

Abstract: JESD97 STRH10N25ESY3
Contextual Info: STRH10N25ESY1 STRH10N25ESY3 N-channel 250V - 0.95Ω - TO-257AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH10N25ESY1 250 V STRH10N25ESY3 250 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge

1128 marking

Abstract: JESD97
Contextual Info: STRH100N6FSY1 STRH100N6FSY3 N-channel 60V - 0.011Ω - TO-254AA rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH100N6FSY1 60 V STRH100N6FSY3 60 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge

passive rfid tag circuit diagram

Abstract: CRC16 rfid preamble ufdfpn 18000-6C
Contextual Info: XRAG2 432-bit UHF, EPCglobal Class1 Generation2 and ISO 18000-6C, contactless memory chip with user memory Features • EPCglobal class 1 generation 2 RFID UHF specification revision 1.0.9 ■ Passive operation (no battery required) ■ UHF carrier frequencies from 860 MHz to

25NM60ND

Abstract: f25nm60n 25nm60n P25NM60N F25NM60 STB25NM60ND-STI25NM60ND STW25NM60ND STB25NM60ND JESD97 STF25NM60ND
Contextual Info: STB25NM60ND-STI25NM60ND STF/P25NM60ND-STW25NM60ND N-channel 600 V - 0.13 Ω - 21 A FDmesh II Power MOSFET D2PAK - I2PAK - TO-220FP - TO-220 - TO-247 Features VDSS @ TJMAX Type STB25NM60ND STI25NM60ND STF25NM60ND STP25NM60ND STW25NM60ND RDS on max 650 V

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 20 LOC BY - .095 REVISIONS DIST ES ALL RIGHTS RESERVED. 1 OO P LTR DESCRIPTION DATE DWN APVD G6 ADD NEW PART -25 19AUG2013 AY SZ G7 UPDATE -25 MATING SEQUENCE 29AUG2013 AY SZ