15U10 Search Results

si 6822

Abstract: 15B36 5U12 15B11 15B16 6822 2u38 2 SC 6822 5U120 6822 si
Contextual Info: C 0 » I SEMICONDUCTOR INC 1 7 7 S M 7 D O O Ü G b b S 3 H C ODI D 7V/- 23 ¡ ï i j r g [ ¡ ìli» T ra n sie n t V o lta g e S u p p re s s o rs TVPs 3 . 250W M u lm u m Ralinga. Peak Puls« Power 250 Watt (10/1000 » SM ) 1 03 KWatt (8/20 ,s * c ) Steady Siale P m w Osapation. MO mWail

SI 6822

Abstract: 15B36 "Codi Semiconductor" 2U30 2U39 2U75 6822 1SB120 6U43 2U22
Contextual Info: C 0 D I SEMICONDUCTOR INC 1 7 7 5 4 7 0 O Q O G b b S 3 H C ODI D Til T -//-2 3 f l'|i Transient Voltage Suppressors TVPs 250W M axim um R alinga. Peak P u tt* Pow er 250 Watt (10/1000 «MC ) 3.03 KWatl (8/20 fH C .) Steady Stala Powe* Osapation. 500 mWatl

DS3511

Contextual Info: 15U100CTL 15A SBR SUPER BARRIER RECTIFIER Features Mechanical Data • • • • • • • • NEW PRODUCT Ultra-Low Forward Voltage Drop Patented Super Barrier Rectifier Technology Soft, Fast Switching Capability Excellent High Temperature Stability

Contextual Info: 15U100S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability - Ideal for automated placement

Contextual Info: 15U100CTLQ 15A SBR SUPER BARRIER RECTIFIER Green NEW PRODUCT Product Summary Features and Benefits VRRM V IO (A) VF MAX (V) @+25°C IR MAX (mA) @+25°C 100 15 0.8 0.1 • • 100% Avalanche Tested Patented SBR technology provides a superior avalanche

Contextual Info: 15U100S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement

Contextual Info: 15U100S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement

15B8

Abstract: 15U200 15U8 15U8A 1N6269 QGQ0157 equivalent ZO 607 15u30
Contextual Info: INTERNATIONAL SEMICOND MRE » TQDQ37Ö 000012b ÖÖ3 « I S E M International Semiconductor, Ine . 1.5 kW T R A N S IE N T VOLTAGE S U P P R E S S O R S 8 .2 to 2 0 0 VOLTS 1500 WATT PEAK POWER M A X IM U M 5.0 WATT STEADY STATE R A T IN G S A N D C H A R A C T E R IS T IC S

2u20 diode

Abstract: 2U39 diode 1N4C07 IN6016 IN4688 1N4C03 1N4C02 HRG1000 1N1989B 1N218
Contextual Info: CODI Semiconductor, Inc m PRODUCT CATALOG Serving the Industry for over 25 years. SILICON DIODES • • • • • • • Zener and avalanche regulator diodes Temperature compensated zener reference diodes Forward regulator diodes Low leakage diodes Voltage variable capacitors

Contextual Info: 15U100CTLQ 15A SBR SUPER BARRIER RECTIFIER Green NEW PRODUCT Product Summary VRRM V 100 IO (A) 15 VF MAX (V) @+25°C 0.8 Features and Benefits •  IR MAX (mA) @+25°C 0.1 capability than schottky diodes ensuring more rugged and  Description and Applications

Contextual Info: 15U100S Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability

Contextual Info: 15U100S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement

Contextual Info: 15U100CTL 15A SBR SUPER BARRIER RECTIFIER Features Mechanical Data • • • • • • • • Ultra-Low Forward Voltage Drop Patented Super Barrier Rectifier Technology Soft, Fast Switching Capability Excellent High Temperature Stability Lead Free Finish, RoHS Compliant Note 1