16-BIT PATA Search Results

MSMS416273

Contextual Info: O K I Semiconductor MSMS416273 262,144-Word x 16-Bit Multiport DRAM DESCRIPTION The MSM5416273 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously.

KM4216C256

Abstract: KM4216V256 SQ15
Contextual Info: KM4216C/V256 CMOS VIDEO RAM 2 5 6 K x 16 Bit CMOS Video RAM The RAM array consists of 512 bit rows of 8192 bits. FEATURES It operates like a conventional 256K x 16 CMOS DRAM. ,u Dual port Architecture 256K x 16 bits RAM port 512 x 16 bits SAM port The RAM port has a write per bit mask capability.

Contextual Info: SIEMENS C16x-Family of High-Performance CMOS 16-Bit Microcontrollers C165 Preliminary C165 16-Bit Microcontroller • • • • • • • • • • • • • • • High Perform ance 16-bit CPU with 4-Stage Pipeline 100 ns Instruction Cycle Time at 20-M Hz CPU Clock

Contextual Info: SIEMENS 256 K x 16-Bit Dynamic RAM HYB 514171BJ-60/-70 Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh HYB 514171BJL-60/-70 Advanced Inform ation 262 144 w ords by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle time Low Power dissipation

Contextual Info: REV22 MITSUBISHI LSIs M5M4V16169TP-10,-12,-15 16M C D R A M :16M (1024K -W Q R D BY 16-BIT) CACHED DRAM W ITH 16K (1024-W Q RD BY 16-BIT) SRAM DESCRIPTION The M 5M 4V16169TP is a 16M -bit Cached DRAM which integrates input registers, a 1,048,576-word by 16-bit dynam ic m em ory array and a

Contextual Info: SIEMENS C16x-Family of High-Performance CMOS 16-Bit Microcontrollers Preliminary SAB 80C166/83C166 • • • • • • • • • • • • • • • • • • • • • • • • • • SAB 80C166/83C166 16-Bit Microcontroller High Performance 16-bit CPU with 4-Stage Pipeline

3217b

Abstract: NEC 4216160 4216160 IC-3217B 4218160
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD42S16160,4216160,42S18160,4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE D escription The /iPD42S16160, 4216160, 42S18160, 4218160 are 1 048 576 words by 16 bits dynamic CMOS RAMs.

256x16* STATIC RAM

Abstract: msm5416262 MSM5416282
Contextual Info: O K I Semiconductor MSM5416282 262,144-Word x 16-Bit M ultiport DRAM D E S C R IP T IO N The MSM5416282 is a 4-Mbit CMOS m ultiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and

D42S18165

Contextual Info: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT ¿ ¿ P D 42S 18165, 4218165 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE Description The /iPD42S18165,4218165 are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional hyper page mode

Contextual Info: November 1993 Edition 2.0 FUJITSU DATA SHEET M B 8 14260-60/-70/-80 CMOS 256K X 16 BIT FAST PAGE MODE DYNAMIC RAM CMOS 262,144 x 16 bit Fast Page Mode Dynamic RAM The Fujitsu MB814260 is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304 memory cells accessible in 16-bit increments. The MB814260 features a "fast page’ mode of

Contextual Info: MITSUBISHI MICROCOMPUTERS M37734M8BXXXFP SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER DESCRIPTION •In te rru p ts . 19 types, 7 levels The M37734M8BXXXFP is a single-chip microcomputer using the •Multiple-function 16-bit tim e r. 5 + 3

FFF84

Contextual Info: TOSHIBA UNDER DEVELOPMENT TMP95CS54 CMOS 16-Bit Microcontrollers TMP95CS54F 1. Outline and Features TMP95CS54 is a high-speed 16-bit microcontroller designed for the control of various mid- to largescale equipment. TMP95CS54 comes in a 100-pin flat package.

2216H

Abstract: XZ MC11 LQFP100-P-1414-0 TMP95CS54 TMP95CS54F
Contextual Info: TOSHIBA UNDER DEVELOPMENT TMP95CS54 CMOS 16-Bit Microcontrollers TMP95CS54F 1. Outline and Features TMP95CS54 is a high-speed 16-bit microcontroller designed for the control of various mid- to largescale equipment. TMP95CS54 comes in a 100-pin flat package.

4218160LE-60

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD 42S18160, 4 2 1 8 1 6 0 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The ,uPD42S18160, 4218160 are 1,048, 576 words by 16 bits CMOS dynamic RAMs. The fast page mode and

KM29N32000T

Abstract: km29n32000
Contextual Info: FLASH MEMORY KM29N32000T/R 4 M x 8 Bit N A N D Flash M em ory GENERAL DESCRIPTION FEATURES • Single 5.0 - volt Supply • Organization - Memory Cell Array : 4M +128K bit x 8bit - Data Register : (512 + 16)bit x Sbit • Automatic Program and Erase - Page Program : (512 + 16)Byte

hilti te 24

Abstract: hilti te 17 GO 440 104 esm 433 rac
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿P D 42S18165L , 4 2 1 8 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The .¿/PD42S18165L, 4218165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EOO

Contextual Info: TOSHIBA TMP93CS44/TMP93CS45 Low Voltage / Low Power CMOS 16-bit MICROCONTROLLERS TMP93CS44F / TMP93CS45F 1. OUTLINE AND DEVICE CHARACTERISTICS The TMP93CS44 / TMP93CS45 are high-speed, advanced 16-bit m icrocontrollers developed for controlling m edium to large-scale equipm ent. The TMP93CS45 does not

TS PQ4 24

Abstract: TS PQ4 12
Contextual Info: TOSHIBA TLCS-900 Series TMP96PM40F CMOS 16-bit Microcontrollers TMP96PM40F 1. Outline and Device Characteristics The TMP96PM40F are high-speed advanced 16-bit micro­ controllers developed for controlling medium to large-scale equipment. The TMP96C141AF does not have a ROM, the

MB81

Abstract: MB81F161622B-10 MB81F161622B-102 MB81F161622B-75
Contextual Info: MEMORY CMOS 2 x 512 K x 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F161622B-75/-102/-10 CM OS 2 Banks of 524,288 x 16 Bit Synchronous Dynamic Random Access M em ory • DESCRIPTION The Fujitsu MB81F161622B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

Contextual Info: K M 4 16 V2 5 6 D J CMOS DRAM ELECTRONICS 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

Contextual Info: MEMORY CMOS 2 x 512 K x 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F161622B-75/-102/-10 CM OS 2 Banks of 524,288 x 16 Bit Synchronous Dynamic Random Access M em ory • DESCRIPTION The Fujitsu MB81F161622B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

Contextual Info: M ITSU BISHI LSIs M 5 M 4 1 6 1 6 5 C J ,T P - 5 ,- 6 ,- 7 , -5S,-6S,-7S P E E U ' HYPER PAGE MODE 16777216-BIT 1048576-WQRD BY 16-BIT DYNAMIC RAM DESCRIPTION This is a family of 1048576-word by 16-bit dynamic RAMS, fabricated with the high performance CMOS process, and is ideal

D482445LGW-A70

Abstract: cwi 1011
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT /¿PD482444, 482445 4M-Bit Dual Port Graphics Buffer 256K-WORD BY 16-BIT D escrip tio n The /iPD482444 and ^PD482445 have a random access port and a serial access port. The random access port has a 4M-bit 262, 144 words x 16 bits memory cell array structure. The serial access port can perform clock

0xc034

Abstract: 0X00002 0x8034 GPI004
Contextual Info: K S32C 6100 16/32-BIT RISC MICROCONTROLLER TECHNICAL SUMMARY Version 0.1 ELECTRONICS KS32C6100 RISC MICROCONTROLLER TECHNICAL SUMMARY OVERVIEW Samsung’s KS32C6100 16/32-bit RISC microcontroller provides a cost-ettective and high-pertormance microcontroller solution for laser beam printers (LBP) with PCL/PDL interpreters. To accelerate raster image