1600A 1700V Search Results

CM1600HC-34H

Abstract: mitsubishi inverter air conditioning igbt mitsubishi mitsubishi The label version
Contextual Info: MITSUBISHI HVIGBT MODULES CM1600HC-34H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1600HC-34H ● IC . 1600A ● VCES . 1700V

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FD1600/1200R17HP4_B2 VorläufigeDaten/PreliminaryData VCES = 1700V IC nom = 1600A / ICRM = 3200A TypischeAnwendungen • Chopper-Anwendungen • Hochleistungsumrichter • Traktionsumrichter

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ1600R17HP4_B2 IHM-BModulmitsoftschaltendemTrench-IGBT4 IHM-Bmodulewithsoft-switchingTrench-IGBT4 VorläufigeDaten/PreliminaryData VCES = 1700V IC nom = 1600A / ICRM = 3200A

fuji igbt

Abstract: 1mbi1600u4c-170 IGBT- module 1mbi1600u
Contextual Info: 1MBI1600U4C-170 IGBT Modules IGBT MODULE U series 1700V / 1600A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply

FZ1600R17

Abstract: FZ1600R17HP4_B21 FZ1600R17HP4-B21
Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ1600R17HP4_B21 IHM-BModulmitsoftschaltendemTrench-IGBT4 IHM-Bmodulewithsoft-switchingTrench-IGBT4 VorläufigeDaten/PreliminaryData VCES = 1700V IC nom = 1600A / ICRM = 3200A

1796I

Abstract: FF800R17KP4_B2
Contextual Info: TechnischeInformation/technicalinformation FF800R17KP4_B2 IHM-AModulmitsoftschaltendemTrench-IGBT4 IHM-Amodulewithsoft-switchingTrench-IGBT4 VorläufigeDaten/Preliminarydata V†Š» = 1700V I† ÒÓÑ = 800A / I†ç¢ = 1600A TypischeAnwendungen

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FZ1600R17HP4_B21 IHM-B模块采用软特性的沟槽栅IGBT4 IHM-Bmodulewithsoft-switchingTrench-IGBT4 初步数据/PreliminaryData VCES = 1700V IC nom = 1600A / ICRM = 3200A 典型应用

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FF800R17KP4_B2 IHM-A模块采用软特性的沟槽栅IGBT4 IHM-Amodulewithsoft-switchingTrench-IGBT4 初步数据/PreliminaryData VCES = 1700V IC nom = 800A / ICRM = 1600A 典型应用

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FF800R17KP4_B2 IHM-A模块采用软特性的沟槽栅IGBT IHM-Amodulewithsoft-switchingTrench-IGBT4 初步数据/PreliminaryData VCES = 1700V IC nom = 800A / ICRM = 1600A 典型应用 • 大功率变流器

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FD1600/1200R17HP4_B2 初步数据/PreliminaryData VCES = 1700V IC nom = 1600A / ICRM = 3200A 典型应用 • 斩波应用 • 大功率变流器 • 大功率变流器 • 风力发电机 TypicalApplications

CM1600HC-34H

Contextual Info: 三菱半導体〈HVIGBTモジュール〉 CM1600HC-34H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor モジュール 大電力スイッチング用 絶縁形 CM1600HC-34H ¡IC …………………………………………… 1600A

17kf6

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1600 R 17 KF6 B2 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung

IC2500

Abstract: FZ 800 R 12 KF6
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FZ 1600 R 17 KF6 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be done 06.04.1998

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1600 R 17 KF6 B2 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

FZ1600R17KF6C

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ1600R17KF6C B2 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

CM1600HB-34H

Abstract: SWITCHING TRANSISTOR 144
Contextual Info: MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som CM1600HB-34H PRE HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules

FZ1600R17KF6C

Abstract: FZ1600R17KF6CB2
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ1600R17KF6C B2 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

NF 838 G

Abstract: FZ1600R17KF6C
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ1600R17KF6C B2 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

CM1600HC-34H

Contextual Info: MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som CM1600HC-34H PRE HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules

DIM1600ECM17-A000

Abstract: DIM1600ECM17-A
Contextual Info: Preliminary Information DIM1600ECM17-A000 IGBT Chopper Module DS6069-1 September 2011 LN28672 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK)

data sheet IC 7400

Abstract: IC 7400 datasheet information OF ic 7400 DIM1600FSM17-A000
Contextual Info: DIM1600FSM17- A000 Single Switch IGBT Module DS5455-3.2 August 2008 LN26327 FEATURES Isolated AlSiC Base with AIN Substrates KEY PARAMETERS VCES VCE (sat)* (typ) IC (max) IC(PK) (max) High Thermal Cycling Capability * 10µs Short Circuit Withstand Non Punch Through Silicon

Contextual Info: DIM1600FSM17-A000 Single Switch IGBT Module Replaces DS5455-3.2 DS5455-4 October 2010 LN27663 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Non Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK)

DIM1600FSS17-A000

Contextual Info: DIM1600FSS17-A000 Single Switch IGBT Module DS5833-1.0 June 2005 FEATURES • 10µs Short Circuit Withstand • Non Punch Through Silicon • Isolated Copper Baseplate • Lead Free construction KEY PARAMETERS VCES VCE sat * (typ) IC (max) IC(PK) (max) (LN23957)

TRANSISTOR C 5857

Abstract: DIM1600NSM17-E000
Contextual Info: DIM1600NSM17-E000 DIM1600NSM17-E000 Single Switch IGBT Module Replaces December 2003 version, issue PDS5621-2.0 FEATURES PDS5621-3.0 June 2004 • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses KEY PARAMETERS VCES typ