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ddr3

Abstract: intel-centrino J0876E60 DDR3 DIMM elpida DDR3 impedance 78-FBGA "DDR3 SDRAM" 78FBGA DDR3-800 ddr3 tsop
Contextual Info: DDR3 SDRAM DDR3 SDRAMDDR2 SDRAM、DDR SDRAMの比較 項 目 DDR3 SDRAM DDR2 SDRAM DDR SDRAM 転送速度 800/1066/1333/1600Mbps 400/533/667/800Mbps 200/266/333/400Mbps 400/533/667/800MHz (200/266/333/400MHz) (100/133/166/200MHz) 電源電圧 (VDD/VDDQ)

Contextual Info: Rev. 1.21. Apr. 2012 M474B5173BH0 M474B1G73BH0 204pin Unbuffered ECC SODIMM based on 4Gb B-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

Contextual Info: M2S1G64CBH4B5P / M2S2G64CB88B5N / M2S4G64CB8HB5N 1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64 PC3-8500 / PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Based on DDR3-1066/1333/1600 128Mx16 1GB / 256Mx8 (2GB) / 256Mx8 (4GB) SDRAM B-Die Features •Performance:

Contextual Info: Rev. 1.51, Apr. 2013 M471B5173BH0 M471B1G73BH0 204pin Unbuffered SODIMM based on 4Gb B-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

96-ball FBGA

Contextual Info: COVER PRELIMINARY DATA SHEET 1G bits DDR3L SDRAM EDJ1108EJBG 128M words x 8 bits EDJ1116EJBG (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization — 16M words × 8 bits × 8 banks (EDJ1108EJBG) — 8M words × 16 bits × 8 banks (EDJ1116EJBG)

NT5CB256

Abstract: NT5CC256M16CP-DI NT5CB256M16 NT5CB256m NT5CB512M8CN-DI NT5CB256M16CP-DI NT5CC512M8CN-DI NT5CC512M8CN-DII NT5CB256M16CP-EK NT5CC512M8
Contextual Info: 4Gb DDR3 SDRAM C-Die NT5CB512M8CN / NT5CB256M16CP NT5CC512M8CN / NT5CC256M16CP CAS Latency Frequency -DI/DII* -EK* -FL* DDR3/L-1600-CL11 DDR3-1866-CL13 DDR3-2133-CL14 Min. Min. Speed Bins Units tCK Parameter Max. Max. Min. Max. Avg Clock Frequency 300 800

L9D3256M32SBG1

Contextual Info: L9D3256M32SBG1 L9D3512M32SBG1 8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module Benefits FEATURES       Configuration: x/'06%*0HJ[[ 8 banks x/'06%*0HJ[[ 8 banks DDR3 Integrated Module [iMOD]: VDD=VDD4 999

TA 7698 AP

Contextual Info: PRELIMINARY INFORMATION L9D3256M32SBG1 L9D3512M32SBG1 8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module Benefits FEATURES " " " " " " Configuration: "‚"N;F5478O54UDI3<"54Ogi"z"54"z" 8 banks ‚"N;F5734O54UDI3<"86Ogi"z"54"z" 8 banks DDR3 Integrated Module [iMOD]:

Contextual Info: Rev. 1.0, Nov. 2010 M471B2873GB0 M471B5673GB0 204pin Unbuffered SODIMM based on 1Gb G-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

D2618

Contextual Info: DDR3L SDRAM Registered DIMM DDR3L SDRAM Specification 240pin Registered DIMM based on 1Gb F-die 72-bit ECC 78FBGA with Lead-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE

k4b2g0846f

Abstract: K4B2G0846F-MY k4b2g0846 M392B5673FH0
Contextual Info: DDR3L SDRAM VLP Registered DIMM DDR3L SDRAM Specification 240pin VLP Registered DIMM based on 1Gb F-die 72-bit ECC 78FBGA with Lead-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE

Contextual Info: Rev. 1.01, Dec. 2010 M392B5773CH0 M392B5273CH0 M392B5270CH0 M392B1K70CM0 M392B1K73CM0 240pin VLP Registered DIMM based on 2Gb C-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND

DDR3-1866 RDIMM SPD JEDEC

Abstract: M392B5670GB0-CF8
Contextual Info: Rev. 1.01, Dec. 2010 M392B2873GB0 M392B5673GB0 M392B5670GB0 240pin VLP Registered DIMM based on 1Gb G-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

M471B2873FHS

Abstract: M/samsung DDR3 SDRAM 2GB
Contextual Info: Unbuffered SoDIMM DDR3 SDRAM DDR3 SDRAM Specification 204pin Unbuffered SODIMM based on 1Gb F-die 64-bit Non-ECC 78FBGA with Lead-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE

M378B5273BH1-CF8

Abstract: samsung dimm DDR3 SPD M391B5273BH1-CF8 M378B5273BH
Contextual Info: DDR3 SDRAM Unbuffered DIMM DDR3 SDRAM Specification 240pin Unbuffered DIMM based on 2Gb B-die 64/72-bit Non-ECC/ECC 78FBGA with Lead-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE

Contextual Info: Rev. 1.01, Dec. 2010 M471B2873GB0 M471B5673GB0 204pin Unbuffered SODIMM based on 1Gb G-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

PC3-10600R-09-10-E1-P1

Abstract: PC3-10600R-09-10-E1-D2 M393B5170EH1-CH9 10600R M393B5170EH1 samsung DDR3 SDRAM 2GB raw card DDR3 PC3 10600R PC3-10600R-09-10-E1 DDR3 VLP Unbuffered DIMM
Contextual Info: May. 2010 DDR3 SDRAM Memory Product Guide SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind.

DDR3 pcb layout

Abstract: DDR3 layout DDR3 DIMM 240 pin names DDR3 pcb layout motherboard DDR3 pcb design DDR3 DIMM 240 pin DIMM DDR3 signal assignments DDR3 timing diagram DDR3 DRAM layout DDR3 impedance
Contextual Info: Challenges in implementing DDR3 memory interface on PCB systems: a methodology for interfacing DDR3 SDRAM DIMM to an FPGA Phil Murray, Altera Corporation Feras Al-Hawari, Cadence Design Systems, Inc. CP-01044-1.1 February 2008 Undoubtedly faster, larger and lower power per bit, but just how do you go about

DDR3 DIMM 240 pin names

Abstract: ELPIDA DDR3 1183H
Contextual Info: PRELIMINARY DATA SHEET 1GB Unbuffered DDR3 SDRAM DIMM EBJ10UE8BDF0 128M words x 64 bits, 1 Rank Specifications Features • Density: 1GB • Organization  128M words × 64 bits, 1 rank • Mounting 8 pieces of 1G bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory

Contextual Info: 7 SERIES FPGAS KINTEX-7 FPGA KC705 EVALUATION KIT FU LL-FEATU R E D, POWE R-E FFICI E NT FPGA DESIG N PLATFOR M KINTEX-7 FPGA KC705 EVALUATION KIT: VERSATILE, HIGH-PERFORMANCE BASE PLATFORM SHORTENS TIME TO MARKET FOR 7 SERIES DESIGNS Design Challenges • Shortened schedules, reduced budgets,

samsung ddr3

Abstract: DDR3 DIMM 240 pinout DDR3-1066 DDR3-1333 K4B1G16 Design Guide for DDR3-1066 k4b1g08 K4B1G0846D K4B1G0446D DDR3-800-666
Contextual Info: 1Gb DDR3 SDRAM K4B1G04 08/16 46D 1Gb D-die DDR3 SDRAM Specification 82 / 100 FBGA with Pb-free & Halogen-Free (RoHS Compliant) CAUTION : * This document includes some items still under discussion in JEDEC. * Therefore, those may be changed without pre-notice based on JEDEC progress.

DDR3 DIMM 240 pinout

Abstract: M393B1K70CH0 K4B2G0846C-HC M393B2K70CM0-CF8 Design Guide for DDR3-1066 M393B1K73CH0-CF8 M393B1K70CH0-CF8 ddr3 RDIMM pinout K4B2G0446C K4B2G0446C-HC
Contextual Info: Rev. 1.0, Jan. 2010 M393B5773CH0 M393B5273CH0 M393B5270CH0 M393B1K70CH0 M393B1K73CH0 M393B2K70CM0 240pin Registered DIMM based on 2Gb C-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND

M393B1K70DH0

Abstract: M393B5273DH0 k4b4g0446d M393B5270DH0 M393B5773DH0 M393B1K73DH0-YF8 M393B1K73DH0 ddr3l pcb design guide M393B2K70DM0 K4B2G0446D-HY
Contextual Info: Rev. 1.0, Sep. 2010 M393B5773DH0 M393B5273DH0 M393B5270DH0 M393B1K70DH0 M393B1K73DH0 M393B2K70DM0 240pin Registered DIMM based on 2Gb D-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND

Contextual Info: HY5RS573225F 256M 8Mx32 GDDR3 SDRAM HY5RS573225F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.6 / Oct. 2004