160FT Search Results

XF 020

Contextual Info: CUSTOM DESIGNED CAPACITORS DEARBORN CUSTOM-DESIGNED FILM AND PAPER CAPACITORS 1. Metalized Paper-Polyester, 350/xF to 385/±F. 3300 VDC peak 2. Metalized Paper-Polyester, 160ftF, 1600 VDC peak 3. Metalized Paper-Polyester, 25 ^ , 1600 VDC peak 4. Paper-Polyester-Foil,

M29F400FB

Abstract: M29Fxxx M29F160FT m29f800F M29F400 M29F160F M29F400FT
Contextual Info: M29F 200FT, 400FT, 800FT, 160FT M29F 200FB, 400FB, 800FB, 160FB Top / Bottom Boot Block 5 V Supply Flash Memory Features „ Supply voltage – VCC = 5 V „ Access time: 55 ns „ Program / Erase controller – Embedded byte/word program algorithms TSOP48 N

M29F400FB

Abstract: m29f800fb M29F200FB M29F400FT M29F800FT m29f160fb M29Fxxx m29f160ft JEDEC TRAY TSOP1 0x22D2
Contextual Info: M29F 200FT, 400FT, 800FT, 160FT M29F 200FB, 400FB, 800FB, 160FB Top / Bottom Boot Block 5 V Supply Flash Memory Features „ Supply voltage – VCC = 5 V „ Access time: 55 ns „ Program / Erase controller – Embedded byte/word program algorithms TSOP48 N

M29Fxxx

Abstract: 800FB M29F400F M29F160F M29Fxx m29f800fb 400FB M29W160F
Contextual Info: M29F 200FT, 400FT, 800FT, 160FT M29F 200FB, 400FB, 800FB, 160FB Top / Bottom Boot Block 5 V Supply Flash Memory Preliminary Data Features „ Supply voltage – VCC = 5 V „ Access time: 55 ns „ Program / Erase controller – Embedded byte/word program algorithms

M29F800FT

Abstract: M29F400FB M29F200FB m29f160fb M29F400F M29F400FT m29f800fb m29F160FT M29F200FT 0x22D6
Contextual Info: M29F 200FT, 400FT, 800FT, 160FT M29F 200FB, 400FB, 800FB, 160FB Top / Bottom Boot Block 5 V Supply Flash Memory Features „ Supply voltage – VCC = 5 V „ Access time: 55 ns „ Program / Erase controller – Embedded byte/word program algorithms TSOP48 N

ADG201AKN

Abstract: ADG201A ADG202A DG201A DG202 HI-201 N-16
Contextual Info: l c 2m o s ANALOG DEVICES □ FEATURES 44V Supply M axim um Rating ± 1 5 V Analog Signal Range Low Ron 160ft Low Leakage 0.5nA) Break Before M ake Switching Extended Plastic Temperature Range ( —40°C to + 8 5 ”C) Low Power Dissipation (33mW ) Available in 16-Lead DIP/ SOIC and

m29f800fb

Contextual Info: M29F 200FT, 400FT, 800FT, 160FT M29F 200FB, 400FB, 800FB, 160FB Top / Bottom Boot Block 5 V Supply Flash Memory Features „ Supply voltage – VCC = 5 V „ Access time: 55 ns „ Program / Erase controller – Embedded byte/word program algorithms TSOP48 N

a19t

Abstract: ba1s 000IH
Contextual Info: TOSHIBA TENTATIVE TC58FYT160/160FT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-MBIT 2M X 8 BITS / 1M X 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FYT160/B160 is a 16,777,216 - bit, 3.0-V read-only electrically erasable and programmable

Contextual Info: TOSHIBA TENTATIVE TC58FVT160/160FT-85.-10,-12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-M BIT 2M x 8 BITS / 1M x 16 BITS CMOS FLASH M EM O R Y DESCRIPTION The TC58FVT160/B160 is a 16,777,216 - bit, 3.0-V read-only electrically erasable and programmable

XAPP031

Contextual Info: £ XILINX XC4000E and XC4000X Series Field Programmable Gate Arrays November 10,1997 Version 1.4 Product Specification XC4000E and XC4000X Series Features Low-Voltage Versions Available Note: XC4000 Series devices described in this data sheet include the XC4000E family and XC4000X Series.

Contextual Info: XILIU001 £ XILINX XC4000 Series Table of Contents XC4000E and XC4000X Series Field Programmable Gate Arrays XC4000E and XC4000X Series Features. 3 Low-Voltage Versions A vailable. 3

1N4447-A

Abstract: 1N4532 1S953 1N4448-A is805 1N4446 1N4447 1N4448 1N4449 1N4454
Contextual Info: - 148- 41 Jig 1 S fS] # -k & m % m # t rr n s & C t(p F ) m 1N4446 1N4447 1N4447 1N4447 1N4448 1N4448 1N4448 1N4449 1N4449 1N4449 s í± £ H i a — A H i a — A B i a — A 1N4450 1N4450 1N4454 1N4454 1N4531 H i a — A 1N4532 1N4533 1N4534 1N4536 1N4536

39VF010

Abstract: nm7010a IIM7100A 8051 tcp ip IIM7010A W3100A cs 2648 IIM7100 rj45 10pin NM7010
Contextual Info: NM6000 Developer’s Guide Version 1.3 August . 2004 NM6000 Developer’s Guide 1 COPYRIGHT NOTICE Copyright 2004 WIZnet, Inc. All Rights Reserved. Technical Support: support@wiznet.co.kr Sales & Distribution: sales@wiznet.co.kr General Information: info@wiznet.co.kr

HP5082-2835

Abstract: HP50822835 hp5082 B1B11 step 7 micro win MP7685KD ic cmos 4090 MP7685 mpop02
Contextual Info: M EOE b O ci 7 4 l4 4 D MICRO POWER SYSTEMS S CMOS 11-Bit Monolithic A/D Flash Converter M IC R O POWER SYSTEMS FEATURES • • • • 0DG3SbS MP7685 IN C PIN CONFIGURATION 11-BIT RESOLUTION 1 MHz Sampling Rate Single Supply Voltage 3 to 6.5V Low Power CMOS (100 mW max.)

1000uF 25V capacitor

Abstract: lucent DC-DC POWER MODULE Avansys Power AV60C-048L-050F06
Contextual Info: AV 6 0 C H a l f - b r i c k S i z e S e r i e s Te c h n i c a l R e f e r e n c e N o t e s 48V Input, 5V and 3.3V Single Output 30W DC-DC Converter Rev01 -1TEL: FAX: USA 1-760-930-4600 1-760-930-0698 Europe 44-(0)1384-842-211 44-(0)1384-843-355 Asia 852-2437-9662

2060 JRC

Abstract: jrc 2060 jrc+2060 NJU6439 NJU6439C SEG40 fbii
Contextual Info: NJU6439 w 1 / • m 4 X o. — T" Y L C D K T7 s N JU 6 4 3 9 IÍ.« * L C D £ l/ 4 f -& LC D K 7 Y A' -TJ -f . a t> h ‘ 7-fn* Ä t f l e o t r J W M 1 « ' j W W 4 c 7 - ín ' i.4 h * n n & t f 4 0 K 7 Y/\* E f t - p ¿ K f i Ë f f i * < ô lt è f c f e * . L C D *

Contextual Info: £3 National Semiconductor August 1990 LH2426 Triple 80 MHz CRT Driver General Description Features The LH2426 contains three wide bandwidth, large signal amplifiers designed for large voltage swings at high frequen­ cies. The amplifiers work on a transimpedance principal i.e.,

sn76131

Abstract: sn76670 uA703 ua702 Fairchild dtl catalog ca3458 UA703 equivalent UA740 703HC lm741
Contextual Info: FAIRCHILD SEMICONDUCTOR THE LINEAR INTE INTRODUCTION NUMERICAL INDEX OPERATIONAL AMPLIFIERS COMPARATORS Each Product Sectio n Contains The Follow ing Categories O rganized By Function Index Selection Guide Data Sh e e ts G lo ssary VOLTAGE REGULATORS COMPUTER/INTERFACE

Contextual Info: 82C87H/883 £ HARRIS C M O S O ctal Inverting B u s T ran sceive r June 1989 P ino u ts 82C87H/883 (CERAMIC DIP) TOP VIEW • This C irc u it is P roce ssed in A c c o rd a n c e to M il-S td -8 8 3 a nd is Fully C o n fo rm a n t U n d e r th e P rovision s o f P aragraph 1.2.1.

Contextual Info: TOSHIBA TENTATIVE TC58FVT160/160FT-85.-10,-12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-M BIT 2M X 8 BITS / 1M X 16 BITS CMOS FLASH M EM O R Y DESCRIPTION The TC58FVT160/B160 is a 16,777,216 - bit, 3.0-V read-only electrically erasable and programmable

AM97C11CN

Abstract: AM9711CN LM378 equivalent SVI 3102 b LM1850 National Semiconductor LM2706 320l 78l05 lm1900 SVI 3105 B mc1458cp1 sgs
Contextual Info: Edge Index by Function 2 l e i . Voltage Regulators Voltage References Operational Amplifiers/Buffers Instrumentation Amplifiers Voltage Comparators Analog Switches Sample and Hold A to D, D to A 8 Industrial/Automotive/Functional Blocks 9 Audio, Radio and TV Circuits

5N 3011

Abstract: EL2004 EL2031C EL2031CG QCX0002 R5 SERIES Q0D3113 EL2031
Contextual Info: EL2031C EL2031C SSO MHz Bi _ Features • • • • • Wide bandwidth—550 MHz High slew rate—7000 V / jas Low quiescent power FE T input 100 mA peak output current Applications • Current booster • Cable/line driver for high resolution graphics

BA22

Contextual Info: TOSHIBA TENTATIVE TC58FYT160/160FT-12#-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-MBIT 2M X 8 BITS / 1M X 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FYT160/B160 is a 16,777,216 - bit, 1.8-V read-only electrically erasable and programmable

Contextual Info: TOSHIBA TENTATIVE T C58FYT160/160FT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-MBIT 2M x 8 BITS / 1M x 16 BITS CMOS FLASH M EM O RY DESCRIPTION The TC58FYT160/B160 is a 16,777,216 - bit, 1.8-V read-only electrically erasable and programm able