161-250 DIODE Search Results

IRK E78996 701819-303ac

Abstract: design sine wave power inverter irkv 300 irkv 142-08 E78996 datasheet full bridge IRK.136 INVERTER 94V0 IR E78996 IRK E78996 IRK E78996 p432
Contextual Info: Bulletin I27101 rev. B 04/98 IRK. SERIES INT-A-pakä Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR 135 A 140 A 160 A Features High voltage Electrically isolated base plate 3000 V RMS isolating voltage Industrial standard package Simplified mechanical designs, rapid assembly

Contextual Info: Bulletin 127101 rev.A 09/97 International IQR Rectifier IRK. SERIES THYRISTOR/ DIODE and THYRISTOR/THYRISTOR INT-A-pak Power Modules 135 A 140 A 160 A Features • H ig h v o lta g e ■ E lectrically Isolated base plate ■ 3000 V RMSIsolating voltage

IRKH135-16D25

Abstract: RK135
Contextual Info: Bulletin 127101 rev. A 09/97 International lö R Rectifier IRK. SERIES THYRISTOR/DIODE and INT-A-pak Power Modules THYRISTOR/THYRISTOR Features • H igh v o lta g e I E le c tric a lly is o la te d b a s e p la te ■ 3 0 0 0 V R M gis o la tin g v o lta g e

semipack skkt 31

Abstract: semikron skkt snubber semikron skkt 31 160 semikron 32769900 skkt 31 160 semipack skkh 31 semikron skkd 131 DIN 46330 skkt 90 thyristor T 95 F 700
Contextual Info: se MIKRDn Section 1: SEMIPACK Thyristor/Diode Modules Summary of Types Circuit Type • New type SKKD1S SKKD26 • • • • • • • • • • • SKKD46 SKKD 81 SKKD 100 SKKD 162 SKKD 201 SKKD 260 SKKE15 SKKE 81 SKKE 162 SKKE 201 SKKE 260 SKKE 400

tiristor

Abstract: diodo a7 diodo 105 skkt 19/12d Semikron sk 1 1200/18e semikron SKKT 162/12E
Contextual Info: SEHIKRON INC DbE D | fll3bb71 DOOllTE fl 7“- s r - ¿3 SEM IPACK Thyristor/Diode Modules SEM IPACK® Thyristor/Dioden-Module SEM IPACK® Modules a thyristors/diodes isolated metal bases. V^oi = 2500 V— V V A A SK K T 131/08D /12D.E /14E /16D, E 900 1300

uPC2581

Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Contextual Info: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8

Contextual Info: Bulletin 127101 rev. B 04/98 International IO R Rectifier IRK. SERIES THYRISTOR/ DIODE and INT-A-pak Power Modules THYRISTOR/THYRISTOR Features 1 3 5 A • H ig h v o lt a g e I E le c t r ic a lly is o la te d b a s e p la te ■ 3 0 0 0 V RMS is o la tin g v o lt a g e

L1385

Abstract: IRK42 IRKH162
Contextual Info: 5*ÌE D • IINR MÖSSMSH QOIBETO 70S U M - . 1 3 5 , SCR I SCR and SCR / DIODE , 3 e , , | R, | NEW INT-A-pak Power Modules INTERNATIONAL RECTIFIER Features ■ H igh v o lta g e ■ E le c tric a lly is o la te d b a s e p la te ■ 3 0 0 0 V RMS iso latin g v o lta g e

IRKH162-14D20

Abstract: IRKH135-16D25
Contextual Info: I 4Ô55452 0Glb7S5 157 M I N R SERIES IRK.135, .136, .141, .142, .161, .162 International S Rectifier SCR I SCR and SCR / DIODE Features NEW INT-A-pak Power Modules INTERNATIONAL RECTIFIER • High voltage ■ Electrically isolated base plate ■ 3000 V RMS isolating voltage

marking L8s

Abstract: marking L7s diode TS SOT23
Contextual Info: BAR 14-1 . BAR 16-1 Silicon PIN Diodes 3 • RF switch, RF attenuator for frequencies above 10 MHz • Low distortion faktor • Long-term stability of electrical characteristics 2 BAR 14-1 BAR 15-1 BAR 16-1 3 3 3 1 2 1 2 1 VPS05161 2 EHA07006 EHA07004 EHA07005

irkv 300

Abstract: k142 IRKH135-16 SCR 40 RIA 120 25 RIA 120 SCR irkt 40 T 705 scr IRKT AN TBT 136 IRKH141-20
Contextual Info: 5*îE I INR 4Û554SE □OlBB'îO 705 assae irk’35' i R I SCR / SCR and SCR / DIODE NEW INT-A-pak Power Modules INTERNATIONAL RE CT IF IE R Features • H igh v o lta g e ■ E le c tric a lly is o la te d ba se p late ■ 3000 V RMS is o la tin g v o lta g e

A773

Abstract: A773* Transistor Q62702-A773 Q62702-A772 a772 A773 5 pin sot-23 diode l8 Q62702-A731 sot-23 diode L9 A731
Contextual Info: Silicon PIN Diodes BAR 14-1 … BAR 16-1 ● RF switch ● RF attenuator for frequencies above 10 MHz ● Low distortion factor ● Long-term stability of electrical characteristics Type Marking Ordering Code tape and reel BAR 14-1 L7 Q62702-A772 BAR 15-1

Contextual Info: SIEMENS Silicon PIN Diodes BAR 14-1 . BAR 16-1 • RF switch • RF attenuator for frequencies above 10 MHz • Low distortion factor • Long-term stability of electrical characteristics Type Marking Ordering Code tape and reel BAR 14-1 L7 Q62702-A772

Contextual Info: SIEM EN S Silicon PIN Diodes BAR 14-1 . BAR 16-1 • R F switch • R F attenuator for frequencies above 10 M H z • Low distortion factor • Long-term stability of electrical characteristics Type Marking Ordering Code tape and reel B AR 14-1 L7 Q 6 2 70 2 -A 7 7 2

Diode BA 148

Abstract: BA 811
Contextual Info: SKT 250 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik Stud Thyristor Line Thyristor /- /- /$- / 11 ?11

BAR16-1

Abstract: top marking c2 sot23 BAR14-1 MARKING GP SOT23 BAR15-1 marking L8s
Contextual Info: BAR14-1.BAR16-1 Silicon PIN Diodes 3
RF switch, RF attenuator for frequencies above 10 MHz
Low distortion faktor
Long-term stability of electrical characteristics BAR14-1 BAR15-1 BAR16-1 3 3 3 1 2 2 1 2 1 VPS05161 2 EHA07006 EHA07004 EHA07005 1 Type

IR E78996 irkh

Abstract: irkv 300 thyristor diode module IRK E78996 IRK E78996 IRK. Series application base triggering circuit of 3 phase inverters IRKH 180 IRK 160 IRK 92
Contextual Info: B ulletin 127101 rev. B 04 /98 International I R Rectifier IRK. SERIES TH YRISTO R/ DIODE and THYRISTO R/THYRISTO R INT-A-pak Power Modules 135 A 140 A 160 A Features • H ig h v o l t a g e ■ E l e c t r i c a l l y i s o la t e d b a s e p l a t e

j4a diode

Contextual Info: SOT23 SILICON VARIABLE CAPACITANCE DIODE ZC829A ISSUE 3 – JANUARY 1998 FEATURES * VHF to UHF operation * Low IR * Enabling Excellent Phase Noise Performance * IR Typically <200pA at 25V APPLICATIONS * Mobile radios and Pagers * Cellular telephones * Voltage controlled Crystal Oscillators

ixsn35n100au1

Contextual Info: 4bflbEEb GGanL»? D34 IIX Y nixYS IXSN35N100AU1 PRELIMINARY D ATA SHEET IGBT miniBLOC with Diode C 25 <TÎ VC ES T e s t C o n d itio n s VcES T j =25°C to 150°C 600 V v CGR T,J = 25°C to 150°C; RIjc „ = 1 MQ 600 V VOES C ontinuous ±20 V v GEM Transient

BAR61

Abstract: BAR14-1 l8s 15 BAR15-1 BAR16-1 marking L8s marking L7s diode
Contextual Info: BAR14-1 / BAR15-1 / BAR16-1 / BAR61. Silicon PIN Diode
RF switch, RF attenuator for frequencies above 10 MHz
Low distortion faktor
Long-term stability of electrical characteristics BAR14-1 BAR15-1 3 BAR16-1 3 BAR61 4 3 3 D 1 D 1 D 2 D 1 1 2 1 D 2 2

aeg vde 0435

Abstract: oki relay aeg thyristors aeg diode Si 61 L 240V AC/48v output rectifiers circuit diagrams
Contextual Info: CONTA-ELECTRONICS ELECTRONICS CONTA-ELECTRONICS CONTA-ELECTRONICS Program Overview 3 4 5 6 10 14 16 22 23 25 27 30 32 34 35 38 39 40 44 46 48 50 52 54 56 58 66 67 68 70 76 90 91 92 94 95 96 98 100 102 104 106 110 112 113 Fuse, Component, Diode and Indicator Modules

ixsn35n100au1

Contextual Info: 4feflfc>2Sb OOOITM? D3M • IXY n ix Y S IXSN35N100AU1 PRELIMINARY DATA SHEET IGBT miniBLOC with Diode C 25 VC ES i f V C E sat S ym bol T e s t C o n d itio n s V CES T j =25°C to 150°C 600 V vCGR T , = 25°C to 150°C; R „ = 1 MQ 600 V V GES C ontinuous

ZV950

Abstract: ZV952V2TA
Contextual Info: 950 series SILICON LOW VOLTAGE HYPERABRUPT VARACTOR DIODES ZV950, ZV952, ZV953, ZMDC953 Device Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics, low voltage operation and high Q. Low reverse current ensures very low phase

SIMPLE 40w inverter circuit

Contextual Info: iited M er - , 35, ,se, , J ^ | SCR I SCR and SCR / DIODE NEW INT-A-pak Power Modules Features 135A • ■ ■ ■ ■ ■ ■ ■ ■ 140A 160A High voltage Electrically isolated base plate 3000 V RMS isolating voltage Industrial standard package Sim plified m echanical designs,