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    162MH Search Results

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    United Chemi-Con Inc APSF2R5ELL162MH08S

    CAP ALUM POLY 1600UF 20% 2.5V TH
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    DigiKey APSF2R5ELL162MH08S Bulk 1,947 1
    • 1 $0.87
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    Mouser Electronics APSF2R5ELL162MH08S 970
    • 1 $0.73
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    • 100 $0.349
    • 1000 $0.244
    • 10000 $0.214
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    Master Electronics APSF2R5ELL162MH08S
    • 1 -
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    • 100 $0.3823
    • 1000 $0.3206
    • 10000 $0.172
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    Nichicon Corporation UBY1H162MHL

    CAP ALUM 1600UF 20% 50V RADIAL
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    DigiKey UBY1H162MHL Bulk 1,592 1
    • 1 $3.54
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    Mouser Electronics UBY1H162MHL 690
    • 1 $3.27
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    Newark UBY1H162MHL Bulk 400
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    TTI UBY1H162MHL Bulk 400
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    Avnet Abacus UBY1H162MHL 25 Weeks 1,600
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    Nichicon Corporation UBY1K162MHL

    CAP ALUM 1600UF 20% 80V RADIAL
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    DigiKey UBY1K162MHL Bulk 174 1
    • 1 $6.36
    • 10 $4.349
    • 100 $6.36
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    Mouser Electronics UBY1K162MHL 147
    • 1 $5.08
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    Newark UBY1K162MHL Bulk 200
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    Avnet Abacus UBY1K162MHL 36 Weeks 800
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    Nichicon Corporation UBY1K162MHL1LT

    CAP ALUM 80V POLAR
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    DigiKey UBY1K162MHL1LT Reel 100
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    Mouser Electronics UBY1K162MHL1LT
    • 1 $4.89
    • 10 $4.21
    • 100 $3.15
    • 1000 $2.54
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    ITG Electronics Inc L201204-162MHF

    FIXED IND 1.634MH 5.6A 186 MOHM
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    DigiKey L201204-162MHF Tray 6
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    Master Electronics L201204-162MHF 6
    • 1 $31.8
    • 10 $29.58
    • 100 $15.15
    • 1000 $13.16
    • 10000 $8.16
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    162MH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ra33h1516m1

    Abstract: RA33H1516M1-101 RF MODULE CIRCUIT DIAGRAM trichloroethylene
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to


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    PDF RA33H1516M1 154-162MHz RA33H1516M1 33watt 162MHz RA33H1516M1-101 RF MODULE CIRCUIT DIAGRAM trichloroethylene

    R1240

    Abstract: 2258 n LBN16202 filter 162MHz 2258 saw-filter 864
    Text: 162MHz SAW Filter 24MHz Bandwidth China Electronics Technology Group Corporation No.26 Research Institute SIPAT Co., Ltd. Part Number: LBN16202 www.sipatsaw.com Features — For IF SAW filter — Single-ended operation — Ceramic Surface Mount Package — Small size


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    PDF 162MHz 24MHz LBN16202 2002/95/EC) 12MHz) 10144MHz 18050/Div 10deg/Div R1240 2258 n LBN16202 filter 162MHz 2258 saw-filter 864

    ra33h1516m1

    Abstract: RF power amplifier 10mW RF MOSFET MODULE RF MODULE CIRCUIT DIAGRAM for channel 4 MOSFET Amplifier Module v 33w marking transistor RF
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to


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    PDF RA33H1516M1 154-162MHz RA33H1516M1 33watt 162MHz RF power amplifier 10mW RF MOSFET MODULE RF MODULE CIRCUIT DIAGRAM for channel 4 MOSFET Amplifier Module v 33w marking transistor RF

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power Modules > RA33H1516M1 RoHS Compliance, 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to 162MHz range. The battery can be connected directly to the drain of the


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    PDF RA33H1516M1 154-162MHz RA33H1516M1 33watt 162MHz

    312 smd code

    Abstract: CCPD-024
    Text: CCPD-024 5x7mm SMD LVPECL Clock Oscillator 2.5 Volts Model CCPD-024 is a 162MHz to 312.500MHz LVPECL Clock Oscillator operating at 2.5Volts. The oscillator utilizes a High Q Third Overtone crystal design providing very low Jitter and Phase Noise. No Sub-Harmonics are present in


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    PDF CCPD-024 162MHz 500MHz 000Mhz 500Mhz 312 smd code

    RA33H1516M1

    Abstract: RA33H1516M1-101 VDD1015
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to


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    PDF RA33H1516M1 154-162MHz RA33H1516M1 33watt 162MHz RA33H1516M1-101 VDD1015

    RA35H1516M

    Abstract: RA35H1516M-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA35H1516M RoHS Compliance , 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to


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    PDF RA35H1516M 154-162MHz RA35H1516M 40-watt 162-MHz RA35H1516M-101

    TB218

    Abstract: No abstract text available
    Text: TB218 Freq:30-162Mhz, Vds=7.2Vdc, Idq=800mA TB218 Gain/Efficiency vs Frequency: Vds=7.2Vdc, Idq=800mA 50 50 45 45 40 40 35 35 Efficiency 30 Pout fixed at 3W Gain 25 25 20 20 15 15 10 10 5 5 20 30 40 50 60 70 80 90 100 110 Frequency MHz 120 130 140 150 160


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    PDF TB218 30-162Mhz, 800mA 190mil, 100nF

    gp 722

    Abstract: 4006C Hokuriku Electric Industry GRM2162C1H200GD01E GRM2162C1H240GD01E GRM2162C1H680GD01E GRM2163C1H3R0CD01E GRM2164C1H2R0CD01E GRM216R11H102KA01E GRM216R11H223KA01E
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-VHF-036-A Date : 11th Jul 2006 Rev. date : 22 th Jun. 2010 Prepared : Y.Kosaka E.Akiyama Confirmed : S.Kametani RD00HVS1 RF characteristics data at f=150-162MHz,Vdd=7.2V SUBJECT: SUMMARY: This application note shows the RF characteristics Frequency Characteristics and Pin vs. Pout


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    PDF AN-VHF-036-A RD00HVS1 150-162MHz RD00HVS1: 150MHz 156MHz 162MHz c72JB CR1/10-241JB gp 722 4006C Hokuriku Electric Industry GRM2162C1H200GD01E GRM2162C1H240GD01E GRM2162C1H680GD01E GRM2163C1H3R0CD01E GRM2164C1H2R0CD01E GRM216R11H102KA01E GRM216R11H223KA01E

    RF power amplifier 10mW

    Abstract: RA33H1516M1 473 marking code transistor
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to


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    PDF RA33H1516M1 154-162MHz RA33H1516M1 33watt 162MHz RF power amplifier 10mW 473 marking code transistor

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power Modules > RA33H1516M1 RoHS Compliance, 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to 162MHz range. The battery can be connected directly to the drain of the


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    PDF RA33H1516M1 154-162MHz RA33H1516M1 33watt 162MHz Oct2011

    amp circuit diagrams 400w

    Abstract: No abstract text available
    Text: <Silicon RF Power Modules > RA35H1516M RoHS Compliance , 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to 162-MHz range. The battery can be connected directly to the drain of the


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    PDF RA35H1516M 154-162MHz RA35H1516M 40-watt 162-MHz amp circuit diagrams 400w

    power mosfet

    Abstract: LMP1603 all mosfet vhf power amplifier
    Text: LMP1603 VHF SILICON MOSFET POWER AMPLIFIER MODULE 5.5W , 7.2V 150MHz 162MHz FEATURES • HIGH OUTPUT POWER 5.5W min. • HIGH EFFICIENCY (> 38%) • LOW INTERMODULATION DISTORTION (< -25dBc) • OPERATION FROM 7.2V SUPPLY • INTEGRAL ENABLE / DISABLE CONTROL


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    PDF LMP1603 150MHz 162MHz -25dBc) 600Hz power mosfet LMP1603 all mosfet vhf power amplifier

    Untitled

    Abstract: No abstract text available
    Text: IP00C502 IP00C502 Specifications LIVE IMAGE FORMAT CAPTURE FUNCTION RGB/YUV 4:4:4 36-bit @ 162MHz YUV4:2:2 24-bit @ 162 MHz Able to capture live image to SDRAM in RGB565 format and then transfer the captured data to serial flash LIVE IMAGE SIZE Horizontal sync signal interval: up to 4096 pixels


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    PDF IP00C502 IP00C502 36-bit 162MHz 24-bit RGB565 PC166 16-bit Horizo02

    RA35H1516M

    Abstract: RA35H1516M-101
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA35H1516M RoHS Compliance , 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to


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    PDF RA35H1516M 154-162MHz RA35H1516M 40-watt 162-MHz RA35H1516M-101

    RF MOSFET MODULE

    Abstract: RA35H1516M RA35H1516M-01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA35H1516M 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to


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    PDF RA35H1516M 154-162MHz RA35H1516M 40-watt 162-MHz RF MOSFET MODULE RA35H1516M-01

    Untitled

    Abstract: No abstract text available
    Text: AURORA, IL 60505 PHONE 6 3 0 8 5 1 -4 7 2 2 FAX (63 0) 8 5 1 -5 0 4 0 www.conwin.com CRYSTAL CONTROLLED OSCILLATORS CONNOR W IN F IE L D ran SURFACE MOUNT 3.3V PECL EE94—51* SPECIFICATIONS Frequency Range E E 94-52* 13MHz to 162MHz 13MHz to 200MHz ±25ppm


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    PDF 13MHz 162MHz 200MHz 25ppm 50ppm 20ppm 12KHz

    Untitled

    Abstract: No abstract text available
    Text: CRYSTAL CONTROLLED OSCILLATORS CONNOR W IN F IE L D AURORA, IL 60505 PHONE 630 851-4722 FAX (630) 851-5040 www.conwin.com SURFACE MOUNT 3.3V PECL EE94-51* SPECIFICATIONS E E 94-52* 13MHz to 162MHz Frequency Range 13MHz to 200MHz ±25ppm Frequency Stability


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    PDF EE94-51* 13MHz 162MHz 200MHz 25ppm 50ppm 20ppm

    Untitled

    Abstract: No abstract text available
    Text: • 0Ü17SDS fiTT ■ MITSUBISHI RF POWER MODULE M68739 * » * !,» #» ■ s re ' 154-162MHz, 9.6V, 7W FM PORTABLE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM PIN : P in : RF INPUT @VGG : G ATE BIAS SUPPLY @ VDD : DRAIN BIAS SUPPLY PO : RF OUTPUT


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    PDF 17SDS M68739 154-162MHz, 20CAII

    S-AV10L

    Abstract: S-AV7
    Text: - 324 - Í4 £ «TXL EJ £ [m in ] ÎK'J /t 5R 1t I S - A V 6 h 7 y -Sx ? , 2 x T - ->'o VHF 154 — 162MHz % : r ^ iíljí^ o ä 25W FM 16. 0 V c o n (V) 16. 0 Po(W) 300. 0 PG(dß) Te (min) (°C)* -30. 0 V t (%) Tc(tnax) (°C)* 100.0 À ^ I V S W R i^ jîd j^ o


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    PDF 162MHz) TcS90Â 200mW 148MHz) -33dB S-AV10L 175MHz) 155MHz, S-AV7

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MODULE M68739R 154-162MHz, 9.6V, 7W FM PORTABLE RADIO OUTLINE DRAWING D im ensions in m m PIN : Po : RF O U TP U T ©VDD : DRAIN BIAS SUPPLY VGG : G ATE BIAS SU PPLY © P in : RF IN PU T © G N D : FIN H47 ABSOLUTE MAXIMUM RATINGS Tc = 25 “C unless otherwise noted


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    PDF M68739R 154-162MHz, 162MHz,

    TA 8515 F

    Abstract: No abstract text available
    Text: CRYSTAL CONTROLLED OSCILLATORS SURFACE MOUNT 3.3V PECL CONNOR WINFIELD AURORA, IL 60505 PHONE 630 851 -4 7 2 2 FAX (630) 851-5 0 4 0 EE94-51* SPECIFICATIONS EE94-52* 13MHz to 162MHz Frequency Range Frequency S tability ±50ppm D n + m .t D u ty 13MHz to 162MHz


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    PDF EE94-51* 13MHz 162MHz 25ppm EE94-52* 50ppm EE94-53* EE94-54* TA 8515 F

    25X1

    Abstract: M68739R
    Text: MITSUBISHI RF POWER MODULE M68739R 154-162MHz, 9.6V, 7W FM PORTABLE RADIO OUTLINE DRAWING D im en sion s in mm PIN : P0 VD D ®VGG © P in ©GND : : : : : RF OUTPUT DRAIN BIAS SUPPLY GATE BIAS SUPPLY RF INPUT FIN H47 ABSOLUTE MAXIMUM RATINGS T c = 2 5 ‘C unless otherw ise noted


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    PDF M68739R 154-162MHz, 162MHz, 162MHz 54MHz 62MHz 25X1 M68739R

    Untitled

    Abstract: No abstract text available
    Text: ^ - 0 G1 7 5 5 2 ^73 • MITSUBISHI RFPOWER MODULE M57785M 150-162MHz, 7.2V, 7W, FM PORTABLE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM © PIN : © P in RF INPU T ®VCC1 1st. DC SUPPLY ®VB B BASE BIAS SUPPLY ® VC C 2


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    PDF M57785M 150-162MHz, GG17254 150MHz