1670MHZ Search Results

Contextual Info: Voltage Controlled Oscillators MW500-1193 1670MHz to 2150MHz Specifications Frequency Tuning Voltage Power Output Phase Noise 1670MHz to 2150MHz 1/10 V 7 +/- 1.5 dBm 10 kHz Offset 100 kHz Offset Frequency Pushing Frequency Pulling Harmonic Suppression -97 typ dBc/Hz

Contextual Info: SPECIFICATION OF TOKO P/No: 1. OUTLINE DIELECTRIC FILTER TDF3A-1907E-19A DIMENSION 4.7 5.7 Marking:1907-19 L : 5.9 B : 2.5 TOKO 2. ELECTRICAL tolerance: ±0.3 unit: mm <D OUT D GND © © IN GND CHARACTERISTICS CENTER FREQUENCY (Fo PASSBAND WIDTH SPECIFICATION

4588d

Abstract: Toko TDFM3A-1907E-11A
Contextual Info: SPECIFICATION OF TOKO P/No: 1. OUTLINE DIELECTRIC FILTER TDFM3A-1907E-11A DIMENSION 3.7 3 .3 4,5 0.8 oo 00 TERM INAL IN OUT © GND GND © © © GND Marking: 1 9 0 7 11 T o le ra n ce :± 0 .3 U nit :m m 2. ELECTRICAL CHARACTERISTICS SPECIFICATION Center Frequency Fo

LFA30-2A1E104M TE

Contextual Info: MULTILAYER DEVICES LC FILTERS-BAND PASS, CHIP MULTILAYER m u F fn t n cn £leefrcnic$ LFSN & LFA S e rie s FE A TU R ES • Small size: see dimensions ■ Metal shielding on inner chip ■ No adjustment required ■ Tape and reel packaging ■ Reflow solderable

Contextual Info: MAPLST1617-030CF LDMOS RF Line Power FET Transistor 30 W , 1600-1700 MHz, 28V M/A-COM Products Released - Rev. 07.07 Product Image Designed for INMARSAT applications in the 1620-1670 MHz frequency band. • • Typical two tone performance IMD=-30 dBc : Average output power: 15W

Contextual Info: MAPL-000817-015CPC LDMOS RF Line Power FET Transistor 15 W , 800-1700 MHz, 26V M/A-COM Products Released - Rev. 07.08 Product Image Designed for broadband commercial applications up to 1.7GHz • • • • High gain, high efficiency and high linearity Aluminum-Copper Metallization for high reliability

Contextual Info: RF2053 RF2053High Performance Fractional-N Synthesizer with Integrated RF Mixer HIGH PERFORMANCE FRACTIONAL-N SYNTHESIZER WITH INTEGRATED RF MIXER Mixer Package: QFN, 32-Pin, 5mmx5mm Features     Fractional-N Synthesizer Very Fine Frequency Resolution

Contextual Info: RF2053 RF2053 HIGH PERFORMANCE FRACTIONAL-N SYNTHESIZER WITH INTEGRATED RF MIXER Mixer Package: QFN, 32-Pin, 5mmx5mm Features      Fractional-N Synthesizer Very Fine Frequency Resolution 1.5Hz for 26MHz Reference On-Chip Crystal-Sustaining Circuit With Programmable

Contextual Info: MAPL-000817-015CPC LDMOS RF Line Power FET Transistor 15 W , 800-1700 MHz, 26V M/A-COM Products Released - Rev. 07.08 Product Image Designed for broadband commercial applications up to 1.7GHz • • • • High gain, high efficiency and high linearity Aluminum-Copper Metallization for high reliability

Contextual Info: Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com Golledge Electronics Ltd Eaglewood Park, Ilminster Somerset, TA19 9DQ, UK SAW Filter 1621.250MHz Part No: MP05833 Model: TA1496A Rev No: 1 A. MAXIMUM RATING: Electrostatic Sensitive Device ESD

Contextual Info: Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK SAW Filter 1747.50MHz Part No: MP01784 Model: TA0762A Rev No: 1 A. MAXIMUM RATING: 1. Input Power Level: +20dBm 2. DC voltage: 0V

LFSC25N12B0315B

Abstract: LFA30-12B0865B010 LFB30N12 LFB30N LFSN20N LFA30 LFSN30N17 LFB30 LFSN30N17C LFB30N12B
Contextual Info: MULTILAYER D EVICES LC FILTERS-BAND PASS, CHIP MULTILAYER m u fín ta Aw &ata* ¿* Bccfrc*tts LFSN & LFA Series F EAT U RES • ■ ■ ■ ■ ■ ■ Small size: see dimensions Metal shielding on inner chip No adjustment required Tape and reel packaging

HMC838LP6C

Contextual Info: HMC838LP6CE v01.0410 FRACTIONAL-N SYNTHESIZER WITH INTEGRATED VCO 795 - 945, 1590 - 1890, 3180 - 3780 MHz Features • RF Bandwidth: 795 - 945, 1590 - 1890, 3180 - 3780 MHz • 24-bit Step Size, Resolution 3 Hz typ • Ultra Low Phase Noise -111 dBc/Hz in Band Typ.

Tuneable PCB Antenna 900

Abstract: meander folded antenna RF pcb antenna for GSM meander line PCB helix antenna planar inverted f antenna
Contextual Info: PA.25 Antenna Integration Application Note Version 2 CONTENTS 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. BASICS APPLICATIONS GROUND PLANE EFFECTS IMPEDANCE BANDWIDTH VSWR GAIN EFFICIENCY POLARIZATION ADVANTAGES MOUNTING ENVIRONMENTAL CONSIDERATIONS

WSN-4G

Contextual Info: Frequency Synthesizer Typical Performance Data WSN-4G+ Power Output Vs Frequency 10 9 9 8 8 Power Output dBm Power Output (dBm) Power Output Vs Frequency 10 7 6 5 4 3 6 5 4 3 -45°C +25°C 2 7 -45°C +25°C 2 +85°C +85°C 1 700 1 750 800 850 900 950 1000

LDMOS 15w

Abstract: MAPLST1617-030CF
Contextual Info: MAPLST1617-030CF LDMOS RF Line Power FET Transistor 30 W , 1600-1700 MHz, 28V Released - Rev. 07.07 Product Image Designed for INMARSAT applications in the 1620-1670 MHz frequency band. • • Typical two tone performance IMD=-30 dBc : Average output power: 15W

DP10T

Abstract: ant2 0.3 23 CXM3525ER VQFN-30P
Contextual Info: DP10T Antenna Switch Module for GSM/UMTS Dual Mode Phones Preliminary Preliminary CXM3525ER Description The CXM3525ER is a DP10T anntena switch module for GSM/UMTS dual mode handset. The CXM3525ER has a built-in dual low pass filter and a +1.8V CMOS compatible decoder.

Contextual Info: Anam PA.25a Speciication Part No. PA.25a Product Name Anam Hexa-Band Cellular SMD Antenna GSM / CDMA / DCS / PCS / WCDMA /UMTS /HSDPA / GPRS / EDGE 800 MHz to 2200 MHz Feature High Eficiency Multi-Band SMD Antenna 35*5*6mm RoHS Compliant SPE-11-8-061/G | page 1 of 21

max 1907

Abstract: 2142MH max 1907 datasheet
Contextual Info: SPECIFICATION OF DIELECTRIC TOKO P/N: FILTER TDF3A-1907E-18 1. OUTLINE DIMENSION Marking:1907-18 TOKO L : 6.1 B : 3.0 tolerance : ±0.3 unit : mm Ÿ ¡ £ OUT GND GND ¢ ¤ IN GND GND 2. ELECTRICAL CHARACTERISTICS CENTER FREQUENCY Fo PASSBAND WIDTH SPECIFICATION

atc100a

Abstract: LDMOS 15w transistor amplifier a05t A05T RO4350 0945 transistor
Contextual Info: RF Power Field Effect Transistor LDMOS, 800—1700 MHz, 15W, 26V 7/27/06 MAPL-000817-015CPC Preliminary Features Package Style Designed for broadband commercial applications up to 1.7GHz • High Gain, High Efficiency and High Linearity • Typical P1dB performance at 960MHz,

atc100a

Abstract: omni spectra sma TRANSISTOR Z4 OZ 960 LDMOS 15w RO4350 25 pin microstrip connector transistor z9 transistor z5
Contextual Info: RF Power Field Effect Transistor LDMOS, 800—1700 MHz, 15W, 26V 6/30/05 MAPLST0817-015PP Preliminary Features Package Style Designed for broadband commercial applications up to 1.7GHz High Gain, High Efficiency and High Linearity Typical P1dB performance at 960MHz,

Contextual Info: Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com SAW Filter 1747.50MHz Part No: MA07865 Model: TA0391A Rev. No: 1 A. MAXIMUM RATING: 1. Input Power Level: 5dBm 2. DC voltage: 0V

UMS-2150-R16

Contextual Info: RF2053 RF2053High Performance Fractional-N Synthesizer with Integrated RF Mixer HIGH PERFORMANCE FRACTIONAL-N SYNTHESIZER WITH INTEGRATED RF MIXER Mixer Package: QFN, 32-Pin, 5mmx5mm Features      Fractional-N Synthesizer Very Fine Frequency Resolution

Contextual Info: RF2053 RF2053High Performance Fractional-N Synthesizer with Integrated RF Mixer HIGH PERFORMANCE FRACTIONAL-N SYNTHESIZER WITH INTEGRATED RF MIXER Mixer Package: QFN, 32-Pin, 5mmx5mm Features  Fractional-N Synthesizer  Very Fine Frequency Resolution