168FT Search Results

Contextual Info: Advance information Features • Organization: 131,072 words x 16 bits • 3.3V ±0.3 operation • H igh speed - 1 0 /1 2 /1 5 ns address access time - 5 / 6 / 8 ns output enable access time • Low pow er consum ption - Active: 5 0 4 m W max 15 ns cycle

Contextual Info: H i 11 P e r f o r m , ! in r « \S7C409fi s l l K x K H \ S 7 C > 4 I y 6 C M O S SK A M A S I 7 k X 8 C M O S S H A M Preliminary information - 1 2 /1 5 / 2 0 / 2 5 n s ad d ress access tim e •Easy m e m o ry e x p a n s io n w ith CE, OE in p u ts ■T T L -co m p atib le, th re e -s ta te I / O

Contextual Info: H igh P erfo rm a n ce •■ A S 7 C 1024 H 128Kx8 CMOS SRAM A S7C 31024 1 2 8 K X 8 C M O S SRAM C o m m o n I / O • O r g a n iz a tio n : 1 3 1 ,0 7 2 w o r d s x 8 b its • T T L /L V T T L -c o m p a tib le , th r e e - s ta te I / O • H ig h sp ee d

Contextual Info: H igh P e r fo r m a n c e •■ AS7C4096 AS7C34096 A 512KX8 H CM O S SRAM 5 I 2 K X 8 C M O S SR A M Features • O rgan ization : 5 2 4 ,2 8 8 w o rd s x 8 bits • 3 6 -p in JEDEC stan dard pack ages • H igh speed - 4 0 0 m il T SO P II - 5 / S / 6 / 7 n s o u tp u t enable access tim e

Contextual Info: H ig h P e r f o r m a n c e 3 2 K x 8 3 .3 V C M O S SR AM a i A S7C 3256 A Low voltage 3 2K X 8 CMOS SRAM • T T L -co m p atib le, th re e -s ta te I / O • S ingle 3 .3 ± 0 .3 V p o w e r s u p p ly • Id eal f o r cache, m o d e m , p o rta b le c o m p u tin g

Contextual Info: Fuses 1206 Size r S p ecification s -i w I I Dimensions L x W : .126” x .063" (3.2mm xl.6 mm) Thickness (T): .035” (0.9mm) Termination: Nickel-Barrier & 90/10Tin -LeadPlated Temperature Range: -55°Cto+125°C Volt Rating: 32VAC/63VDC Time-Current Characteristics

1120008

Abstract: AS7C164-20PC AS7C164-12PC itt 2,7 1120008 7.5 7C164-12
Contextual Info: H igh Perform ance 8K x 8 CMOS SRAM •■ A S7C 164 A Features •Organization: 8,192 words x 8 bits • High speed - 8 /1 0 /1 2 /1 5 /2 0 ns address access time - 3 /3 /3 /4 /5 ns output enable access time • Low power consumption - Active: 633 mW max 10 ns cycle

64KX16

Contextual Info: High p e rfo rm a n c e 6 4 K x 16 CMOS SRAM » II AS7C181026LL A Features • O ptim ized design for battery operated portable system s • Intelliw att active p o w er reduction circuitry • O rganization: 65 ,5 3 6 w ords X 16 bits • 1.65V to 1.95V operating range JESD 8-7

20014a

Abstract: 7C3256 32KX8 AS7C3256 AS7C32S6
Contextual Info: H ig h P e r f o r m a n c e 3 2 K x 8 3 .3 V C M O S SRAM . . A S7C 3256 II Jn L Low voltage 32K X 8 CMOS SRAM • TTL-com patible, three-state I /O • Ideal for cache, m odem , portable com puting - 75% p ow er reduction d uring CPU idle m ode • 2 8 -p in JEDEC standard packages