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    16C450, Search Results

    16C450, Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    TL16C450FNR
    		Texas Instruments Single UART Without FIFO 44-PLCC 0 to 70 Visit Texas Instruments Buy
    TL16C450FN
    		Texas Instruments Single UART Without FIFO 44-PLCC 0 to 70 Visit Texas Instruments Buy

    16C450, Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    16C450
    		Exar UNIVERSAL ASYNCHRONOUS RECEIVER/TRANSMITTER (UART) Original PDF 183.71KB 28
    SF Impression Pixel

    16C450, Price and Stock

    Rochester Electronics LLC

    Rochester Electronics LLC TL16C450FN

    TL16C450 SINGLE UART WITHOUT FIF
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    DigiKey TL16C450FN Bulk 33,281 108
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    Rochester Electronics LLC TL16C450FNR

    TL16C450 SINGLE UART WITHOUT FIF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TL16C450FNR Bulk 18,217 126
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    Rochester Electronics LLC ST16C450IJ44TR

    IC UNIV ASYNCHRONOUS RECEIVER
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    DigiKey ST16C450IJ44TR Bulk 3,596 213
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    Rochester Electronics LLC ST16C450CQ48

    ST16C450 - UART
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    DigiKey ST16C450CQ48 Bulk 1,606 180
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    Rochester Electronics LLC ST16C450CJ44TR

    IC UNIV ASYNCHRONOUS RECEIVER
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    DigiKey ST16C450CJ44TR Bulk 893 182
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    Find more 16C450, price and stock on Findchips.com

    16C450, Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ARM dual port SRAM compiler

    Abstract: rm2510 synopsys dc ultra DSPG 16C450 16C550 ARM920T ARM940T IEEE1284 STD110
    Contextual Info: V S MSUNG STD130 ELECTRONICS STD130 Standard Cell 0.18um System-On-Chip ASIC Dec 2000, V2.0 Features 1.8/2.5/3.3V - Leff= 0.15um, Ldrawn = 0.18um Device - Up to 23 million gates - Power dissipation :24nW/MHz 3.3/5.0V - Gate Delay : 48ps @ 1.8V, 1SL Device


    Original     		STD130 STD130 24nW/MHz ARM920T/ARM940T, ARM dual port SRAM compiler rm2510 synopsys dc ultra DSPG 16C450 16C550 ARM920T ARM940T IEEE1284 STD110 PDF

    TDA 9361 PS

    Abstract: tda 2974 LD5Q ci 8602 gn block diagram TDA 2265 5.1 AUDIO AMP TDA 2030 TDA 7877 TDA 0200 circuit TDA 9594 TDA 2088
    Contextual Info: V S MSUNG STD130 ELECTRONICS STD130 Standard Cell 0.18um System-On-Chip ASIC Dec 2000, V2.0 Features 1.8/2.5/3.3V - Leff= 0.15um, Ldrawn = 0.18um Device - Up to 23 million gates - Power dissipation :24nW/MHz 3.3/5.0V - Gate Delay : 48ps @ 1.8V, 1SL Device


    Original     		STD130 STD130 24nW/MHz ARM920T/ARM940T, TDA 9361 PS tda 2974 LD5Q ci 8602 gn block diagram TDA 2265 5.1 AUDIO AMP TDA 2030 TDA 7877 TDA 0200 circuit TDA 9594 TDA 2088 PDF

    ARM9TDMI

    Abstract: ARM1020E samsung hdd Samsung S ARM teaklite DSPG SMART ASIC bga ARM920t datasheet Avant Electronics USB samsung
    Contextual Info: V S MSUNG STDH150 ELECTRONICS STDH150 Standard Cell 0.13um System-On-Chip ASIC Dec 2001, V1.0 Features Analog cores - Ldrawn = 0.13um 1.2/2.5/3.3V Device - Up to 34.3 million gates - Power dissipation:9nW/MHz@1.2V, 2SL, ND2 3.3/5.0V - Gate Delay: 52ps @ 1.2V, 2SL, ND2


    Original     		STDH150 STDH150 ARM920T/ARM940T, ARM9TDMI ARM1020E samsung hdd Samsung S ARM teaklite DSPG SMART ASIC bga ARM920t datasheet Avant Electronics USB samsung PDF

    ARM dual port SRAM compiler

    Abstract: DSPG teaklite ARM9TDMI ARM1020E samsung hdd UART 16C450 Standard Cell 0.13um System-On-Chip ASIC ARM920T ARM926EJ
    Contextual Info: V S MSUNG STD150 ELECTRONICS STD150 Standard Cell 0.13um System-On-Chip ASIC Oct 2001, V1.0 Features Analog cores - Ldrawn = 0.13um 1.2/2.5/3.3V Device - Up to 46 million gates - Power dissipation:9nW/MHz@1.2V, 2SL, ND2 3.3/5.0V - Gate Delay: 52ps @ 1.2V, 2SL, ND2


    Original     		STD150 STD150 ARM920T/ARM940T, ARM dual port SRAM compiler DSPG teaklite ARM9TDMI ARM1020E samsung hdd UART 16C450 Standard Cell 0.13um System-On-Chip ASIC ARM920T ARM926EJ PDF

    DSPG

    Abstract: Samsung Soc processor STD110 ASIC 16C450 16C550 ARM920T ARM940T IEEE1284 STD110 piler
    Contextual Info: V S MSUNG STD131 ELECTRONICS STD131 Standard Cell 0.18um System-On-Chip ASIC Dec 2000, V2.0 Features 1.8/2.5/3.3V - Leff= 0.15um, Ldrawn = 0.18um Device - Up to 23 million gates - Power dissipation :24nW/MHz 3.3/5.0V - Gate Delay : 48ps @ 1.8V, 1SL Device


    Original     		STD131 STD131 24nW/MHz ARM920T/ARM940T, DSPG Samsung Soc processor STD110 ASIC 16C450 16C550 ARM920T ARM940T IEEE1284 STD110 piler PDF

    ARM1020E

    Abstract: samsung hdd Samsung Soc processor 4468 8 pin ARM920t datasheet ARM9TDMI DSPG ARM SRAM compiler UART 16C450 ARM940T
    Contextual Info: V S MSUNG STD150 ELECTRONICS STD150 Standard Cell 0.13um System-On-Chip ASIC Oct 2001, V1.0 Features Analog cores - Ldrawn = 0.13um 1.2/2.5/3.3V Device - Up to 46 million gates - Power dissipation:9nW/MHz@1.2V, 2SL, ND2 3.3/5.0V - Gate Delay: 52ps @ 1.2V, 2SL, ND2


    Original     		STD150 STD150 ARM920T/ARM940T, ARM1020E samsung hdd Samsung Soc processor 4468 8 pin ARM920t datasheet ARM9TDMI DSPG ARM SRAM compiler UART 16C450 ARM940T PDF

    ternary content addressable memory VHDL

    Abstract: ARM1020E SMART ASIC bga ARM dual port SRAM compiler Samsung ASIC 0.13um standard cell library Standard Cell 0.13um System-On-Chip ASIC DSPG samsung lcd JTAG "content addressable memory" precharge
    Contextual Info: V S MSUNG STDL150 ELECTRONICS STDL150 Standard Cell 0.13um System-On-Chip ASIC March 2003, V2.0 Features Analog cores - Ldrawn = 0.13um 1.5/2.5/3.3V Device 1.5/2.5/3.3V - Up to 45.8 million gates Interface - Power dissipation: 13nW/MHz@1.5V, 2SL, ND2 5.0V


    Original     		STDL150 STDL150 13nW/MHz ARM920T/ARM940T, ternary content addressable memory VHDL ARM1020E SMART ASIC bga ARM dual port SRAM compiler Samsung ASIC 0.13um standard cell library Standard Cell 0.13um System-On-Chip ASIC DSPG samsung lcd JTAG "content addressable memory" precharge PDF