16N50 Search Results
16N50 Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
---|---|---|---|---|---|---|---|
16_N-50-3-27/133_NE |
![]() |
16_N-50-3-27/133_NE | Original | 774.77KB | |||
16_N-50-7-77/133_NE |
![]() |
16_N-50-7-77/133_NE | Original | 814.09KB |
16N50 Price and Stock
TTM Technologies BD1416N50100AHFBALUN 1.4GHZ-1.6GHZ 50/100 0404 |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
BD1416N50100AHF | Cut Tape | 3,798 | 1 |
|
Buy Now | |||||
![]() |
BD1416N50100AHF | 4,000 | 4,000 |
|
Buy Now | ||||||
Vishay Siliconix SIHP16N50C-E3MOSFET N-CH 500V 16A TO220AB |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
SIHP16N50C-E3 | Tube | 959 | 1 |
|
Buy Now | |||||
![]() |
SIHP16N50C-E3 | 1,850 | 2 |
|
Buy Now | ||||||
STMicroelectronics STF16N50M2MOSFET N-CH 500V 13A TO220 |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
STF16N50M2 | Tube | 708 | 1 |
|
Buy Now | |||||
![]() |
STF16N50M2 | 714 | 1 |
|
Buy Now | ||||||
![]() |
STF16N50M2 | 15 Weeks | 50 |
|
Buy Now | ||||||
![]() |
STF16N50M2 | Tube | 1,000 | 0 Weeks, 1 Days | 1 |
|
Buy Now | ||||
![]() |
STF16N50M2 | 15 Weeks | 50 |
|
Buy Now | ||||||
onsemi FDA16N50-F109MOSFET N-CH 500V 16.5A TO3PN |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
FDA16N50-F109 | Tube | 677 | 1 |
|
Buy Now | |||||
![]() |
FDA16N50-F109 | Tube | 60 Weeks | 450 |
|
Buy Now | |||||
![]() |
FDA16N50-F109 | 450 |
|
Buy Now | |||||||
![]() |
FDA16N50-F109 | 60 Weeks | 450 |
|
Buy Now | ||||||
Vishay Siliconix SIHG16N50C-E3MOSFET N-CH 500V 16A TO247AC |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
SIHG16N50C-E3 | Tube | 294 | 1 |
|
Buy Now |
16N50 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
16N50Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 16N50 Preliminary Power MOSFET 16 A, 500 V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 16N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state |
Original |
16N50 O-220F 16N50 O-220F2 QW-R502-532 | |
16N50PContextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFA 16N50P IXFP 16N50P IXFH 16N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 |
Original |
16N50P O-220 O-263 O-247 16N50P | |
Contextual Info: Photoelectric sensors OHDM 16N5001/S14 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34,5 50 4,3 8,5 4,3 12 30 4 15,4 25 M12 x 1 36 3 * emitter axis general data photo type background suppression light source pulsed red laser diode |
Original |
16N5001/S14 | |
Contextual Info: Photoelectric sensors FHDM 16N5001/S14 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 8,5 4,3 12 30 4 15,4 25 M12 x 1 36 3 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw |
Original |
16N5001/S14 | |
Contextual Info: Photoelectric sensors FHDM 16N5001/S14 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 8,5 4,3 12 30 4 15,4 25 M12 x 1 36 3 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw |
Original |
16N5001/S14 | |
Contextual Info: Photoelectric sensors OHDM 16N5001/S14 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34,5 50 4,3 8,5 4,3 12 30 4 15,4 25 M12 x 1 36 3 * emitter axis general data photo type background suppression light source pulsed red laser diode |
Original |
16N5001/S14 | |
Contextual Info: Photoelectric sensors FHDM 16N5004/S14 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 8,5 4,3 12 30 4 15,4 25 M12 x 1 36 3 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw |
Original |
16N5004/S14 | |
Contextual Info: Photoelectric sensors FHDM 16N5004 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 36 3 4,3 12 30 4 15,4 * emitter axis general data type photo background suppression light source pulsed red LED sensing distance Tw 20 . 600 mm |
Original |
16N5004 | |
Contextual Info: Photoelectric sensors FHDM 16N5001/S14 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 8,5 4,3 12 30 4 15,4 25 M12 x 1 36 3 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw |
Original |
16N5001/S14 | |
Contextual Info: Photoelectric sensors FHDM 16N5004 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 36 3 4,3 12 30 4 15,4 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw 20 . 600 mm |
Original |
16N5004 | |
Contextual Info: Photoelectric sensors FHDM 16N5004/S14 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 8,5 4,3 12 30 4 15,4 25 M12 x 1 36 3 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw |
Original |
16N5004/S14 | |
a8aaContextual Info: Optoelektronische Sensoren Photo electric sensors Cellules opto-électroniques Abmessungen Dimensions Dimensions OHDM 16N5001 Elektrischer Anschluss Connection diagram Schéma de raccordement BN 1 Í?*+Ã8ÂÂ*ÂPÎ *34,5 Z dark operate light operate 0V |
Original |
16N5001 2002/95/EC a8aa | |
16n50
Abstract: 646V
|
Original |
16N50P 16N50P O-220 O-263 O-247 16n50 646V | |
Contextual Info: Advanced Technical Information PolarHVTM Power MOSFET IXTA 16N50P IXTP 16N50P IXTQ 16N50P VDSS ID25 = 500 V = 16 A Ω = 400 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ |
Original |
16N50P 16N50P O-220 O-263 405B2 | |
|
|||
Contextual Info: Photoelectric sensors FHDM 16N5001/S14 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 8,5 4,3 12 30 4 15,4 25 M12 x 1 36 3 * emitter axis general data type photo background suppression light source pulsed red LED sensing distance Tw |
Original |
16N5001/S14 prot34 | |
Contextual Info: Photoelectric sensors FHDM 16N5001 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 36 3 4,3 12 30 4 15,4 * emitter axis general data type photo background suppression light source pulsed red LED sensing distance Tw 20 . 450 mm |
Original |
16N5001 | |
Contextual Info: Photoelectric sensors FHDM 16N5001 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 36 4,3 12 30 4 15,4 3 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw 20 . 450 mm |
Original |
16N5001 | |
Contextual Info: Photoelectric sensors OHDM 16N5001/S14 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34,5 50 4,3 8,5 4,3 12 30 4 15,4 25 M12 x 1 36 3 * emitter axis general data photo type background suppression light source pulsed red laser diode |
Original |
16N5001/S14 | |
Contextual Info: Photoelectric sensors OHDM 16N5001 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34,5 50 4,3 36 4,3 12 30 4 15,4 3 * emitter axis general data photo type background suppression light source pulsed red laser diode sensing distance Tw |
Original |
16N5001 680nm | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 16N50 Power MOSFET 16 A, 500 V N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220F1 The UTC 16N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state |
Original |
16N50 O-220F1 16N50 O-220F2 QW-R502-532 | |
Contextual Info: Photoelectric sensors FHDM 16N5004/S14 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 8,5 4,3 12 30 4 15,4 25 M12 x 1 36 3 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw |
Original |
16N5004/S14 | |
Contextual Info: Photoelectric sensors FHDM 16N5004 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 36 4,3 12 30 4 15,4 3 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw 20 . 600 mm |
Original |
16N5004 | |
Contextual Info: Photoelectric sensors FHDM 16N5001 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 36 4,3 12 30 4 15,4 3 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw 20 . 450 mm |
Original |
16N5001 | |
Contextual Info: Photoelectric sensors FHDM 16N5004/S14 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 8,5 4,3 12 30 4 15,4 25 M12 x 1 36 3 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw |
Original |
16N5004/S14 |