16JAN03 Search Results

Contextual Info: 4 DRAWING MA D E THIS IN THIRD DRAWING 0 ANGLE IS 3 UNP0BLI5HED. COPYRIGHT RELEASED 19 BY AMP FOR POBLICATION INCORPORATED. ALL 2 <3> PROJECTION L OC , 19 INTERNATIONAL RIGHTS DI 5 T R E V I 5 I ON! 00 GP RESERVED. Z O NE DE5CRIPTION LTR H REVISED PER EC

M440T1MV

Contextual Info: M440T1MV 3.3V, 32 Mbit 1024 Kbit x 32 TIMEKEEPER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ 3.3V ± 10% INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, AND CRYSTAL PRECISION POWER MONITORING AND

Contextual Info: 4 DRAWING MA D E THIS IN THIRD DRAWING C ANGLE IS 3 UNPUBLISHED. COPYRIGHT RELEASED 19 BY AMP FOR PUBLICATION INCORPORATED. ALL 2 <3> PROJECTION L OC , 19 INTERNATIONAL RIGHTS DI 5 T R E V I 5 I ON' 00 GP RESERVED. Z O NE DE5CRIPTION LTR REVISED PER EC DATE

M440T1MV

Abstract: 1m x 8 sram
Contextual Info: M440T1MV 3.3V, 32 Mbit 1024 Kbit x 32 TIMEKEEPER SRAM FEATURES SUMMARY • 3.3V ± 10% ■ INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, AND CRYSTAL ■ PRECISION POWER MONITORING and POWER SWITCHING CIRCUITRY ■

MBRB30H100

Abstract: MBRB10H90 MBRF10H90
Contextual Info: MBR30H100CT, MBRF30H100CT & MBRB30H100CT Series Vishay Semiconductors New Product formerly General Semiconductor High-Voltage Dual Schottky Rectifiers Reverse Voltage 90 to 100V Forward Current 30A Maximum TJ 175°C ITO-220AB MBRF30H90CT, MBRF30H100CT 0.188 (4.77)

rto 20f

Abstract: resistor 220 TO220 HEATSINK DATASHEET VISHAY diode MARKING ED VISHAY MARKING ED 155Cload RTO 20
Contextual Info: RTO 20 Vishay Sfernice Power Resistor Thick Film Technology FEATURES • 20 Watt at 25°C Heatsink Mounted • High Power Dissipation to size ratio • Wide Resistance Range • Negligible Inductance • Easy Mounting • TO220 package: Compact and easy to mount.

GP10E

Abstract: RGP02 RGP02-12E RGP02-20E rgp02-20
Contextual Info: RGP02-12E THRU RGP02-20E Vishay Semiconductors formerly General Semiconductor Case Style GP10E Glass Passivated Junction Fast Switching Rectifier Reverse Voltage 1200 to 2000V Forward Current 0.5A Features * d e t n e t a P • Plastic package has Underwriters Laboratories

AI07010

Abstract: M440T513Y 168-Ball M48t224
Contextual Info: M440T513Y 5.0V, 16 Mbit 512 Kbit x 32 TIMEKEEPER SRAM FEATURES SUMMARY • 5.0V ± 10% ■ INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, AND CRYSTAL ■ PRECISION POWER MONITORING and POWER SWITCHING CIRCUITRY ■

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT D AMP 1 4 71-9 REV 31MAR2000 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. — »— LOC DIST AF 50 REVISIONS Lin DESCRIPTION REVISED PER 0 G 3 A - 0 5 8 2 - 0 2 ' '4 ' ' 5 LOCATED

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. k y COPYRIGHT - 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - , - . ALL RIGHTS RESERVED. D 0 . 8 1 [ . 0 B A AMP 1 4 71-9 REV 31MAR2000 3 3 2 + + . 0 2 . 0 1 5 ] LOC DIST AF 50 R E V IS IO N S L in REVISED PER 0 G 3 A - 0 5 8 2 - 0 2

RC5 Infrared transmitter

Abstract: TSAL6200 TSOP2230QJ1 TSOP2233QJ1 TSOP2236QJ1 TSOP2237QJ1 TSOP2238QJ1 TSOP2240QJ1 TSOP2256QJ1
Contextual Info: TSOP22.QJ1 VISHAY Vishay Semiconductors IR Receiver Modules for Remote Control Systems \ Description The TSOP22.QJ1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy

M440T513Y

Contextual Info: M440T513Y 5.0V, 16 Mbit 512 Kbit x 32 TIMEKEEPER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 5.0V ± 10% INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, AND CRYSTAL PRECISION POWER MONITORING AND

M440T1MV

Contextual Info: M440T1MV 3.3V, 32 Mbit 1024 Kbit x 32 TIMEKEEPER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ 3.3V ± 10% INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, AND CRYSTAL PRECISION POWER MONITORING AND