16M X 4 HYB Search Results

Marvell 88E1116

Abstract: D6603 ASUS ST6214 L7037 U7106 C51MV MCP51 19V DC 90w C7291 SI4925B
Contextual Info: 5 4 3 2 1 F3T Block Diagram CPU VCORE CPU S1g1 PAGE 61 D DDR2 16M*16 DDR2 16M*16 DDR2 16M*16 DDR2 16M*16 DDR2-667 Dual Channel DDR2 D SO-DIMM X 2 PAGE 5,6 PAGE 2,3,4 128bit Power On Sequence H.T 800 MHz PAGE 39 USB LVDS & INV PAGE 14 C51MV PCIE *16 G73M CRT & TV OUT

Contextual Info: IB M 1 3 Q 1 6 7 3 4 H C A 16M X 72 Registered SDRAM Module Features • 200-Pin JEDEC Standard, Registered 8-Byte Dual In-line Memory Module • Automatic and controlled Precharge Commands • 16M -SDRAM CAS Latency: 2 -Burst Type: Sequential or Interleave

MS12R

Contextual Info: 16M x 4-Bit Dynamic RAM . o, r, x . HY b 3164405AJ/AT L -40/-50/-60 HYB 3165405AJ/ATÌL) -40/-50/-60 v ' ^ (4k & 8k Refresh, EDO-Version) Advanced Information • 16 777 216 words by 4-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode - EDO - operation

Contextual Info: SIEMENS 16M X 4-Bit Dynamic RAM HYb 3164405BJ/BT L -40/-50/-60 o », o * u • X (4k & 8k Refresh, EDO-version) HYB 3165405BJ/BT(L) -40/-50/-60 v ’ Preliminary Information 16 1 1 1 216 words by 4-bit organization 0 to 70 °C operating temperature Hyper Page Mode - EDO - operation

Contextual Info: SIEMENS 16M X 4-Bit Dynamic RAM HYb 3164405AJ/AT L -40/-50/-60 „ o, o « u • X (4k & 8k-Refresh, EDO-version) HYB 3165405AJ/AT(L) -40/-50/-60 ' ’ P re lim in ary Info rm ation • 16 111 216 words by 4-bit organization • 0 to 70 ”C operating temperature

P-SOJ-32-1

Abstract: smd transistor 2F data TSOP-32
Contextual Info: 16M x 4-Bit Dynamic RAM 4k & 8k Refresh HYB 3164400AJ/AT(L) -40/-50/-60 HYB 3165400AJ/AT(L) -40/-50/-60 Preliminary Information • 16 777 216 words by 4-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation • Performance:

Contextual Info: SIEMENS 16M x 4-Bit Dynamic RAM 4k & 8k Refresh HYB 3164400AJ/AT(L) -40/-50/-60 HYB 3165400AJ/AT(L) -40/-50/-60 Advanced Information • 16 777 216 words by 4-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation • Performance:

P-SOJ-32-1

Abstract: TSOP-32
Contextual Info: 16M x 4-Bit Dynamic RAM 4k & 8k Refresh HYB 3164400AJ/AT(L) -40/-50/-60 HYB 3165400AJ/AT(L) -40/-50/-60 Advanced Information • 16 777 216 words by 4-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation • Performance: -40

P-SOJ-32-1

Abstract: TSOP-32
Contextual Info: 16M x 4-Bit Dynamic RAM HYB 3164405AJ/AT L -40/-50/-60 HYB 3165405AJ/AT(L) -40/-50/-60 (4k & 8k Refresh, EDO-version) Preliminary Information • • • • • • • • • • 16 777 216 words by 4-bit organization 0 to 70 °C operating temperature

Contextual Info: SIEMENS 16M X 4-Bit Dynamic RAM 4k & 8k-Refresh h YB 3164400AJ/AT(L) -40/-50/-60 HYB 3165400AJ/AT(L) -4Q/-50/-60 Preliminary Information • 16 777 216 words by 4-bit organization • 0 to 70 "C operating temperature • Fast Page Mode operation • Performance:

Contextual Info: SIEMENS 16M X 4-Bit Dynamic RAM 4k & 8k Refresh h YB 3164400AJ/AT(L) -40/-50/-60 HYB 3165400AJ/AT(L) -40/-50/-60 Advanced Information • 16 777 216 words by 4-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation • Performance:

400J

Contextual Info: 16M x 4-Bit Dynamic RAM 4k & 8k Refresh HYB 3164400J/T -50/-60 HYB 3165400J/T -50/-60 Preliminary Information • • • • • • • • • • • 16 777 216 words by 4-bit organization 0 to 70 ˚C operating temperature Fast access and cycle time

Contextual Info: 16M x 4-Bit Dynamic RAM 4k & 8k Refresh h YB 3164400AJ/AT(L) -40/-50/-60 HYB 3165400AJ/AT(L) -40/-50/-60 Advanced Information • 16 777 216 words by 4-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation • Performance: -40

bt 109 transistor

Abstract: 400B 405B P-SOJ-32-1 3164405BJ 3164405b
Contextual Info: 16M x 4-Bit Dynamic RAM HYB 3164405BJ/BT L -40/-50/-60 HYB 3165405BJ/BT(L) -40/-50/-60 (4k & 8k Refresh, EDO-version) Preliminary Information • • • • • • • • • • • 16 777 216 words by 4-bit organization 0 to 70 °C operating temperature

smd marking YB

Abstract: Q67100-Q1557 405AJ 3164405AT-60 SMD MARKING CODE 09t P-SOJ-32-1 TSOP-32 ACS42
Contextual Info: SIEM ENS 16M 4-Bit Dynam ic RAM u X 4k & 8k-Refresh, EDO-version HYB 3164405AJ/AT(L) -40/-50/-60 «Y B 3165405AJ/AT(L) -40/-50/-60 X P r e lim in a r y In fo rm a tio n • • • • 16 777 216 words by 4-bit organization 0 to 70 ”C operating tem perature

Contextual Info: SIEMENS 16M X 4-Bit Dynamic RAM 4k & 8k-Refresh HYB 3164400AJ/AT(L) -40/-50/-60 HYß 3165400AJ/AT(L) -40/-50/-60 Prelim inary Inform ation • 16 777 216 words by 4-bit organization • 0 to 70 °C operating temperature • Fast Page M ode operation •

siemens a5e

Abstract: A5E siemens
Contextual Info: SIEM EN S 16M X 4-Bit Dynamic RAM HYB 3164405AJ/AT L -40/-50/-60 HYB 3165405AJ/AT(L) -40/-50/-60 ' , (4k & 8k-Refresh, EDO-version) Preliminary Information • 16 777 216 words by 4-bit organization • 0 to 70 "C operating temperature • Hyper Page Mode - EDO - operation

JLH 94 V0

Abstract: Siemens 3R marking KDL
Contextual Info: SIEM ENS 16M X 4-Bit Dynamic RAM 4k & 8k Refresh, EDO-version hYB 3164405J/T(L) -50/-60 3165405J/T(L) -50/-60 h YB Preliminary Information • 16 777 216 words by 4-bit organization • 0 to 70 'C operating tem perature • Fast access and cycle time RAS access time:

SMD MARKING CODE AQ1

Abstract: MARKING CODE SMD JW C17S 16T MARKING P-SOJ-32-1 TSOP-32 Q67100-Q1536
Contextual Info: SIEM ENS 16M X 4-Bit Dynamic RAM 4k & 8k-Refresh HYB 3164400AJ/AT(L) -40/-50/-60 HY b 3165400AJ/AT(L) -40/-50/-60 Prelim inary Inform ation • 16 777 216 words by 4-bit organization • 0 to 70 "C operating tem perature • Fast Page M ode operation •

Contextual Info: 16M x 4-Bit Dynamic RAM 4k & 8k Refresh, EDO-version HYB 3164405J/T(L) -50/-60 HYB 3165405J/T(L) -50/-60 Preliminary Information • • • • • • • • • • • 16 777 216 words by 4-bit organization 0 to 70 ˚C operating temperature Fast access and cycle time

Contextual Info: I =¥= = = = ’= IBM13N16644HC IBM13N16734HC Preliminary 16M x 64/72 2 Bank Unbuffered SDRAM Module Features • Programmable Operation: - CAS Latency: 2, 3 - Burst Type: Sequential or Interleave - Burst Length: 1, 2, 4, 8, Full-Page FullPage supports Sequential burst only

400J

Contextual Info: SIEMENS 16M X 4-Bit Dynamic RAM 4k & 8k Refresh hYB 3164400J/T -50/-60 HYB 3165400J/T -50/-60 Prelim inary Inform ation 7.2 mW standby (TTL) 720 nW standby (MOS) _ Read, write, read-modify-write, CAS-beforeRAS refresh (CBR), RAS-only refresh, hidden refresh and self

Contextual Info: Discontinued 4/1/00 - last order; 7/31/00 - last ship . IBM13M16734BCB 16M x 72 1-Bank Registered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 16Mx72 Synchronous DRAM DIMM • • • • • • • -75A Reg. 4 Units

Contextual Info: SIEMENS 16M X 4-Bit Dynamic RAM HYB 3164405AJ/AT L -40/-50/-60 . . . 0 0. B , (4k & 8k Refresh, EDO-Version) HYB 3165405AJ/AT(L)-40/-50/-60 v ' Advanced Information • • • • • • • • • • • 16 777 216 words by 4-bit organization 0 to 70 °C operating temperature