16M-BIT 2M X8/1M X16 Search Results

ba37 diode

Abstract: K8D1716U K8D1716UBB K8D1716UTB BGA11 samsung nor flash
Contextual Info: K8D1716UTB / K8D1716UBB FLASH MEMORY Document Title 16M Bit 2M x8/1M x16 Dual Bank NOR Flash Memory Revision History Revision No. History 0.0 Initial Draft 1 Draft Date Remark July 25, 2004 Advance Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB FLASH MEMORY

Contextual Info: K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit 2M x8/1M x16 Dual Bank NOR Flash Memory Revision History Revision No. History 0.0 Initial Draft 1 Draft Date Remark July 25, 2004 Advance Revision 0.0 August 2004 K8D1716UTC / K8D1716UBC FLASH MEMORY

Contextual Info: K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit 2M x8/1M x16 Dual Bank NOR Flash Memory Revision History Revision No. History 0.0 Draft Date Remark Initial Draft July 25, 2004 Advance Support 48TSOP1 Lead Free Package September 16, 2004 1 Revision 0.1

ba37

Abstract: 48FBGA K8D1716U K8D1716UBC K8D1716UTC samsung nor flash BA251
Contextual Info: K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit 2M x8/1M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft July 25, 2004 Advance 0.1 Support 48TSOP1 Lead Free Package Sep 16, 2004 Preliminary

Contextual Info: K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit 2M x8/1M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft July 25, 2004 Advance 0.1 Support 48TSOP1 Lead Free Package Sep 16, 2004 Preliminary

BA37

Abstract: ba37 diode K8D1716UBC 48FBGA K8D1716U K8D1716UTC samsung nor flash BA2411 150us
Contextual Info: K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit 2M x8/1M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft July 25, 2004 Advance 0.1 Support 48TSOP1 Lead Free Package Sep 16, 2004 Preliminary

Contextual Info: ADVANCED INFORMATION MX29F1615 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • Software and hardware data protection • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles

29f1615

Abstract: MX29f1615
Contextual Info: PRELIMINARY MX29F1615 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • Software and hardware data protection • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles

29f1615

Abstract: MX29f1615 29f1615-10
Contextual Info: PRELIMINARY MX29F1615 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • Software and hardware data protection • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles

29F1615

Abstract: mx29f1615
Contextual Info: PRELIMINARY MX29F1615 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • Software and hardware data protection • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles

MX29F1610B

Abstract: MX29F1610A
Contextual Info: PRELIMINARY MX29F1610A/B 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns

Contextual Info: PRELIMINARY MX29F1610A 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns

MX29F1610B

Contextual Info: PRELIMINARY MX29F1610A 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns

MX29F1610B

Abstract: MX29F1610A
Contextual Info: PRELIMINARY MX29F1610A 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns

23C16005

Contextual Info: KM23C16005A G CMOS MASK ROM 16M-Bit (2M x8/1M x16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8 (byte mode) 1,048,576 x 16 (word mode) • Fast access time Random access: 120ns (max.) Page access: 50 ns (max.) • Supply voltage: single + 5V

29f1615

Contextual Info: MX29F1615 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • Software and hardware data protection • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles Fast access time: 90/100/120ns

MX29F1610

Abstract: MX29F1610B MX29F1610A A14A
Contextual Info: INDEX PRELIMINARY MX29F1610A/B 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 70/90/120ns

BA28

Abstract: BA-28 BA34 BA32 KM28U160-T
Contextual Info: Advance Information FLASH MEMORY KM28U160-T/B 16M Bit 2M X8/1M x16 N O R Flash Memory FE A T U R ES G E N E R A L DESC R IPTIO N • Single Voltage, 2,7 to 3.6 V for Read and VWte operations • Organization 2,097,152 x 8 bit (Byte mode) 1 1,048,576 x 16 bit (Word mode)

Contextual Info: SA MS UNG E L E C T R O N I C S INC 42E D Bi 0011103 1 BSflGK PRELIMINARY KM23C16000FP CMOS MASK ROM 16M-Bit 2M X8/1M X16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Swltchable organization 2,097,152 x 8 (byte mode) 1,048,576 x 16 (word mode) • Fast access time: 150ns (max.)

Contextual Info: PRELIMINARY KM23C16100 CMOS MASK ROM 16M-Bit 2M x8/1M x16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itc h a b le organization T h e KM 23C 16100 is a fu lly s ta tic m a s k p ro g ra m m a b le 2 ,097,152 x 8 (byte m ode) ROM 1,040,576 x 16 (word m ode)

LA 8512

Abstract: samsung dram 1M - FLASH PCMCIA linear card samsung memory rom 1K x8 SRAM 1m X 8 dip 1M - PCMCIA linear card SAMSUNG 256K x 16bit DRAM 30 pin SIP dram memory TSOP 44 Package nand memory
Contextual Info: FUNCTION GUIDE MEMORY ICs 4. ORDERING INFORMATION 4.1 DRAM KM 4 X X XXXXX X X X - XX DRAM SPEED •6 : •7 : •8 : •10: ORGANIZATION • 1: X1 • 4: X4 • 8: X8 • 9: X9 •16: X16 • 18: X18 • 32: x32 60ns 70ns 80ns 100ns PACKAGE PROCESS & POWER

M8512

Abstract: samsung dram AM8512 TSOP 56 Package nand memory
Contextual Info: FUNCTION GUIDE MEMORY ICs 4. ORDERING INFORMATION 4.1 DRAM KM 4 X X XXXXX X X X - XX DRAM SPEED •6 : •7 : •8 : • 10: ORGANIZATION • 1: X1 • 4: X4 • 8: X8 60ns 70ns 80ns 100ns PACKAGE • 9: X9 •1 6 : X16 •P : DIP • 18: X18 • 32: x32 PROCESS & POWER

Contextual Info: LG Semicon PRODUCT IMPEX • 4M DRAM GM71C4100C 4M x 1 Bit, 5V, 1KRef„ FPM - 25 GM71C4100E 4M x 1 Bit, 5V, 1KRef„ FPM - 34 GM71C4400C 1M x4B it, 5V, 1KRef., FPM - 44

56-PIN

Abstract: LH28F016LL LH28F016SU camera with iCCD matrix BSR10
Contextual Info: LH28F016LL FEATURES • User-Configurable x8 or x16 Operation • 3 V Write/Erase Operation 3 V VPP – 2.7 - 3.6 V Write-Erase Operation • 120 ns Maximum Access Time (VCC = 3.0 V) • 150 ns Maximum Access Time (VCC = 2.7 V) • • • • 16M (1M x 16, 2M × 8) Flash Memory