16M16 Search Results

KM29U128

Contextual Info: ADVANCE INFORMATION Part No. ISC-MPD-16M16F Irvine Sensors Corporation Microelectronics Products Division ¼ Gigabit FLASH Memory Stack 528-Byte Page Read Operation

MT48H16M16LFFG

Abstract: MT48V16M16LFFG
Contextual Info: ADVANCE‡ 256Mb: x16 MOBILE SDRAM MOBILE SDRAM 16M16LFFG, 16M16LFFG– 4 Meg x 16 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds FEATURES • Temperature Compensated Self Refresh TCSR

57256

Abstract: DDR200 DDR266B MT46V16M16 MT46V32M8 MT46V64M4
Contextual Info: PRELIMINARY‡ 256Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V64M4 – 16 Meg x 4 x 4 banks MT46V32M8 – 8 Meg x 8 x 4 banks 16M16 – 4 Meg x 16 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/datasheets/

MT48LC16M16

Abstract: 57256 A11 MARKING CODE MT48LC16M16A2 MT48LC32M8A2 MT48LC64M4A2 PC133 registered reference design mt48lc16m16a2fg-7e
Contextual Info: 256Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC64M4A2 – 16 Meg x 4 x 4 banks MT48LC32M8A2 – 8 Meg x 8 x 4 banks 16M16A2 – 4 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds FEATURES • PC66-, PC100-, and PC133-compliant

CK1519

Contextual Info: 256Mb: x8, x16 Automotive DDR SDRAM Features Automotive DDR SDRAM MT46V32M8 – 8 Meg x 8 x 4 banks 16M16 – 4 Meg x 16 x 4 banks Features Options • VDD = 2.5V ±0.2V, VDDQ = 2.5V ±0.2V VDD = 2.6V ±0.1V, VDDQ = 2.6V ±0.1V DDR400 1 • Bidirectional data strobe (DQS) transmitted/

TSOP 54 PIN

Abstract: MT48LC16M16LFTG
Contextual Info: PRELIMINARY‡ 256Mb: x16 MOBILE SDRAM MOBILE SDRAM MT48LC16LFFG, 16M16LFBG, MT48V16MLFFG, 16M16LFBG, 16M16LFFG, 16M16LFBG 4 Meg x 16 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds

09005aef8091e6a8

Contextual Info: 256Mb: x4, x8, x16 SDRAM Features Synchronous DRAM MT48LC64M4A2 – 16 Meg x 4 x 4 banks MT48LC32M8A2 – 8 Meg x 8 x 4 banks 16M16A2 – 4 Meg x 16 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com Features Options • PC100- and PC133-compliant

09005aef8091e6d1

Abstract: PC133 registered reference design
Contextual Info: 256Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC64M4A2 – 16 Meg x 4 x 4 banks MT48LC32M8A2 – 8 Meg x 8 x 4 banks 16M16A2 – 4 Meg x 16 x 4 banks Features Options • PC100- and PC133-compliant • Fully synchronous; all signals registered on positive

PC133 registered reference design

Contextual Info: 256Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC64M4A2 – 16 Meg x 4 x 4 banks MT48LC32M8A2 – 8 Meg x 8 x 4 banks 16M16A2 – 4 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds FEATURES • PC66-, PC100-, and PC133-compliant

mt46v16m16 rev

Abstract: mt46v16m16 die MT46V16M16
Contextual Info: PRELIMINARY‡ 256Mb: x8, x16 DDR 400 SDRAM Addendum DOUBLE DATA RATE DDR SDRAM MT46V32M8 – 8 MEG X 8 X 4 BANKS 16M16 – 4 MEG X 16 X 4 BANKS Features General Description • • • • • The DDR400 SDRAM is a high-speed CMOS, dynamic random-access memory that operates at a

Contextual Info: 256Mb: x4, x8, x16 DDR SDRAM Features Double Data Rate DDR SDRAM MT46V64M4 – 16 Meg x 4 x 4 banks MT46V32M8 – 8 Meg x 8 x 4 banks 16M16 – 4 Meg x 16 x 4 banks For the most current data sheet, please refer to the Micron Web site: www.micron.com/datasheets

MT48v32m16

Contextual Info: PRELIMINARY‡ 256Mb and 512Mb: x16 TwinDie MOBILE SDRAM SYNCHRONOUS DRAM MT48LC32M16S2 16M16T2 16M16B2 Features • • • • • • • • • • • • • 16M16B2 MT48H32M16S2 16M16T2 16M16B2 1 2 3 A VSS DQ15 B DQ14 C 4

Contextual Info: 256Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V64M4 – 16 MEG x 4 x 4 BANKS MT46V32M8 – 8 MEG x 8 x 4 BANKS 16M16 – 4 MEG x 16 x 4 BANKS For the latest data sheet revisions, please refer to the Micronâ Web site: www.micron.com/datasheets

Contextual Info: 256Mb: x4, x8, x16 DDR2 SDRAM DDR2 SDRAM MT47H64M4 – 16 MEG X 4 X 4 MT47H32M8 – 8 MEG X 8 X 4 16M16 – 4 MEG X 16 X 4 For the latest data sheet, please refer to the Micron Web site: http://www.micron.com/products/dram/ddr2sdram/ Features • •

TOP SIDE MARKING OF MICRON

Abstract: 84 FBGA 84-PIN MT6V16M16F2-3C MT6V16M16F2-3M MT6V16M18F2-3M RDRAM FBGA 84 MICRON fBGA package code
Contextual Info: ADVANCE 256Mb/288Mb: 16 MEG x 16/18 RDRAM RAMBUS DRAM 16M16 - 512K x 16 x 32 banks MT6V16M18 - 512K x 18 x 32 banks For the latest data sheet, please refer to the Micron Web site: www.micronsemi.com/datasheets/datasheet.html FEATURES 84-PIN FBGA TOP VIEW

Contextual Info: 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM 16M16LF – 4 Meg x 16 x 4 banks MT48H8M32LF – 2 Meg x 32 x 4 banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option • Configuration

Contextual Info: 256Mb: x4, x8, x16 DDR2 SDRAM DDR2 SDRAM SAA64M4.– 16 Meg x 4 x 4 SAA32M8.– 8 Meg x 8 x 4 16M16.– 4 Meg x 16 x 4 For the latest data sheet, please refer to the SpecTek Web site: http://www.spectek.com Features • • • • • •

Contextual Info: 256Mb: x4, x8, x16 DDR2 SDRAM DDR2 SDRAM SAA64M4.– 16 Meg x 4 x 4 SAA32M8.– 8 Meg x 8 x 4 16M16.– 4 Meg x 16 x 4 For the latest data sheet, please refer to the SpecTek Web site: http://www.spectek.com Features • • • • • •

nanya 8gb DDR3

Abstract: nanya 4gb DDR3 SODIMM DDR3 DIMM 16H16 DDR3 rDIMM SODIMM ddr2 8gb TSOPII inphi PC3-12800 SSTL-15
Contextual Info: NANYA Module Part Numbering Guide NT 4GT T 64 U 8 H NANYA Technology Module Density Product Family T=DDR2 SDRAM Data Width 64=x64 U N AC Speed 256=256MB 512=512MB 1G=1GB 2G=2GB 4G=4GB 8G=8GB 16T=16GB Stacking 32T=32GB (Stacking) D=DDR SDRAM C=DDR3 SDRAM

0.1U_0402_16V4Z

Abstract: mda48 aos3401 BLM18PG121SN1D Compal Electronics M54-p r2561 BSS84S compal efl50 ls
Contextual Info: 5 4 3 2 1 Digitally signed by fdsf DN: cn=fdsf, o=fsdfsd, ou=ffsdf, email=fdfsd@fsdff, c=US Date: 2010.02.15 18:47:35 +07'00' D C D Mini EFL50 ATI VGA/B M52-P C www.kythuatvitinh.com Revision 1.0 B B A A Compal Secret Data Security Classification Issued Date

88396

Abstract: r2561 AOS3401 BLM15AG102SN1D AOS340 BLM18PG121SN1D Compal Electronics M54-p CHB2012U121 Compal ls- vga
Contextual Info: 5 4 3 2 1 D C D Mini EFL50 ATI VGA/B M52-P C Revision 1.0 B B A A Compal Secret Data Security Classification Issued Date 2005/12/22 Deciphered Date 2006/12/22 THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL

mt48h8m32lfb5-75lit

Abstract: 256Mb MT48 MT48H16M16LF MT48H8M32LF mt48h8m32lfb5 rev g
Contextual Info: 256Mb: x16, x32 Mobile SDRAM Features Mobile SDRAM 16M16LF – 4 Meg x 16 x 4 banks MT48H8M32LF – 2 Meg x 32 x 4 banks Features Table 1: • Fully synchronous; all signals registered on positive edge of system clock • VDD/VDDQ = 1.70–1.95V • Internal, pipelined operation; column address can

Contextual Info: 256Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC64M4A2 – 16 Meg x 4 x 4 banks MT48LC32M8A2 – 8 Meg x 8 x 4 banks 16M16A2 – 4 Meg x 16 x 4 banks Features Options • PC100- and PC133-compliant • Fully synchronous; all signals registered on positive

Lpddr2 Idd7

Abstract: 216-ball LPDDR2 NT6SM16M32 NT6SM16M32AK-S1
Contextual Info: 512Mb LPSDR SDRAM NT6SM16M32AK Feature  Options Fully synchronous; all signals registered on positive edge of Marking  VDD /VDDQ system clock -1.8V/1.8V  M Internal, pipelined operation; column address can be changed  Configuration every clock cycle