16MARCH Search Results

Contextual Info: C O N F I D E N T I A L LX23108AL TM 8 Ports LED Back Light High Voltage Driver P RODUCTION D ATASHEET DESCRIPTION • White LED, or RGB Backlight Driver for Large Size Display Panels • Up to 8 LED Strings With ± 0.5% Precision Current Matching. •

sot883l

Abstract: CEDM7001
Contextual Info: Central CEDM7001 TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7001 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for

hx8312

Contextual Info: DOC No. HX8312-A-DS HX8312-A 240 RGB x 320 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver Version 05 March, 2006 HX8312-A 240 RGB x 320 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver List of Contents March, 2006

2N1772A

Abstract: 2N1777A 2N1774A 2N1776A RL-250 2N1776 To-64
Contextual Info: 2N1772A 2N1774A 2N1776A 2N1777A SILICON CONTROLLED RECTIFIER 8 AMP, 100 THRU 400 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N1772A Series types are reverse blocking triode thyristors, designed for use in low power switching and phase control

BEC npn

Abstract: switch NPN
Contextual Info: Small Signal Transistors TO-92 Case Continued TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO ICBO @ VCB CODE (nA) (V) (V) (V) *ICES (V) *VCES *ICEV MIN MIN MIN MAX EBC 40 40* 10 100 30 hFE @ IC VCE (SAT) @ IC Cob (V) (mA) (V) (mA) fT NF toff MIN 10,000 MAX -

CEDM7001

Abstract: mosfet low vgs n-channel mosfet transistor low power CEDM7001E
Contextual Info: Central CEDM7001E TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7001E is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for

Contextual Info: PROCESS CPZ37R Transient Voltage Suppressor 12 Volt TVS Chip PROCESS DETAILS Die Size 6.7 x 6.7 MILS Die Thickness 3.54 MILS Anode Bonding Pad Area 4.3 x 4.3 MILS Top Side Metalization Al - 13,000Å Back Side Metalization Au-As/Ag - 13,000Å/6,000Å GEOMETRY

Contextual Info: CYT5551D Central TM Semiconductor Corp. SURFACE MOUNT DUAL, ISOLATED NPN SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CYT5551D type consists of two 2 isolated NPN silicon transistors packaged in an epoxy molded SOT-228 surface mount case. Manufactured by the epitaxial

TR13

Abstract: tr 5551
Contextual Info: Package Details - SOD-123 Mechanical Drawing Part Marking: 3 Character Alpha/Numeric Code Lead Code: 1 Cathode 2) Anode Mounting Pad Geometry Dimensions in mm) Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R2 (8-September 2005) Package Details - SOD-123

CEDM8001

Contextual Info: Central CEDM8001 TM Semiconductor Corp. SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM8001 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for

CM75A

Abstract: CM07A CM14A CM11A cm78a CM13A CM05A CM08A CM33A CM78A MARKING CODE
Contextual Info: Central CMF5.0A THRU CMF170A Semiconductor Corp. UNI-DIRECTIONAL SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR 200 WATTS, 5.0 THRU 170 VOLTS Specified TM by STAND-OFF VOLTAGE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMF5.0 Series of Transient Voltage Suppressors are designed to protect sensitive electronic