Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    16MB HIGH-SPEED ASYNCHRONOUS SRAM Search Results

    16MB HIGH-SPEED ASYNCHRONOUS SRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5752H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP2304 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), High-speed / IPM driver, 1 Mbps, 3750 Vrms, 5pin SO6 Visit Toshiba Electronic Devices & Storage Corporation
    TLP2766A Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), High-speed, 20 Mbps, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    16MB HIGH-SPEED ASYNCHRONOUS SRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CXK77L18R160GB-3

    Abstract: CXK77L18R160GB-33 CXK77L18R160GB-4
    Text: SONY CXK77L18R160GB 16Mb LW R-R HSTL High Speed Synchronous SRAM 1M x 18 3/33/4 Preliminary Description The CXK77L18R160GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 1,048,576 words by 18 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a one-deep write buffer


    Original     		PDF CXK77L18R160GB CXK77L18R160GB BGA-119P-021 BGA119-P-1422 CXK77L18R160GB-3 CXK77L18R160GB-33 CXK77L18R160GB-4

    43bh

    Abstract: marking code 42ae marking JC 6f diode CXK77P18E160GB CXK77P36E160GB CXK77P36E160GB-4AE CXK77P36E160GB-4E 43AF marking 43AF
    Text: SONY CXK77P36E160GB / CXK77P18E160GB 16Mb LW R-L HSTL High Speed Synchronous SRAMs 512K x 36 or 1M x 18 8Mb LW R-L w/ EC HSTL High Speed Synchronous SRAMs (256K x 36 or 512K x 18) 4/42/43/44 Preliminary Description The CXK77P36E160GB (organized as 524,288 words by 36 bits) and the CXK77P18E160GB (organized as 1,048,576 words


    Original     		PDF CXK77P36E160GB CXK77P18E160GB CXK77P36E160GB -100uA 43bh marking code 42ae marking JC 6f diode CXK77P18E160GB CXK77P36E160GB-4AE CXK77P36E160GB-4E 43AF marking 43AF

    CXK77P36R160GB

    Abstract: No abstract text available
    Text: SONY CXK77P36R160GB / CXK77P18R160GB 16Mb LW R-R HSTL High Speed Synchronous SRAMs 512K x 36 or 1M x 18 3/33/4 Preliminary Description The CXK77P36R160GB (organized as 524,288 words by 36 bits) and the CXK77P18R160GB (organized as 1,048,576 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate input


    Original     		PDF CXK77P36R160GB CXK77P18R160GB CXK77P36R160GB BGA-119P-021 BGA119-P-1422

    CXK77Q18R160GB

    Abstract: CXK77Q18R160GB-3 CXK77Q18R160GB-33 CXK77Q18R160GB-4 CXK77Q36R160GB CXK77Q36R160GB-3 CXK77Q36R160GB-33 CXK77Q36R160GB-4
    Text: SONY CXK77Q36R160GB / CXK77Q18R160GB 16Mb LW R-R HSTL High Speed Synchronous SRAMs 512K x 36 or 1M x 18 3/33/4 Preliminary Description The CXK77Q36R160GB (organized as 524,288 words by 36 bits) and the CXK77Q18R160GB (organized as 1,048,576 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate input


    Original     		PDF CXK77Q36R160GB CXK77Q18R160GB CXK77Q36R160GB BGA-119P-021 BGA119-P-1422 650mA 600mA CXK77Q18R160GB CXK77Q18R160GB-3 CXK77Q18R160GB-33 CXK77Q18R160GB-4 CXK77Q36R160GB-3 CXK77Q36R160GB-33 CXK77Q36R160GB-4

    CXK77N18R160GB

    Abstract: CXK77N18R160GB-3 CXK77N18R160GB-33 CXK77N18R160GB-4 CXK77N36R160GB CXK77N36R160GB-3 CXK77N36R160GB-33 CXK77N36R160GB-4
    Text: SONY CXK77N36R160GB / CXK77N18R160GB 16Mb LW R-R HSTL High Speed Synchronous SRAMs 512Kb x 36 or 1Mb x 18 3/33/4 Preliminary Description The CXK77N36R160GB (organized as 524,288 words by 36 bits) and the CXK77N18R160GB (organized as 1,048,576 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate input


    Original     		PDF CXK77N36R160GB CXK77N18R160GB 512Kb CXK77N36R160GB IDD-33 660mA 550mA 600mA 500mA CXK77N18R160GB CXK77N18R160GB-3 CXK77N18R160GB-33 CXK77N18R160GB-4 CXK77N36R160GB-3 CXK77N36R160GB-33 CXK77N36R160GB-4

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK77Q36B160GB 16Mb LW R-R HSTL High Speed Synchronous SRAM 512K x 36 Organization 28/33/37/4 Preliminary Description The CXK77Q36B160GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 524,288 words by 36 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a one-deep write buffer


    Original     		PDF CXK77Q36B160GB CXK77Q36B160GB 830mA 930mA IDD-28 700mA 840mA IDD-33 640mA 780mA

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK77Q36B160GB 16Mb LW LS R-R HSTL High Speed Synchronous SRAM 512K x 36 28/33/4 Preliminary Description The CXK77Q36B160GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 524,288 words by 36 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a one-deep write buffer


    Original     		PDF CXK77Q36B160GB CXK77Q36B160GB IDD-33

    CXK77Q36B160GB

    Abstract: CXK77Q36B160GB-28 CXK77Q36B160GB-33 CXK77Q36B160GB-4
    Text: SONY CXK77Q36B160GB 16Mb LW LS R-R HSTL High Speed Synchronous SRAM 512K x 36 Organization 28/33/4 Preliminary Description The CXK77Q36B160GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 524,288 words by 36 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a one-deep write buffer


    Original     		PDF CXK77Q36B160GB CXK77Q36B160GB 930mA 900mA IDD-28 840mA 800mA IDD-33 740mA 700mA CXK77Q36B160GB-28 CXK77Q36B160GB-33 CXK77Q36B160GB-4

    CXK77N18B160GB-3

    Abstract: CXK77N36B160GB-3 CXK77N36B160GB-33 CXK77N36B160GB-4 BGA-119
    Text: SONY  CXK77N36B160GB / CXK77N18B160GB 16Mb LW LS R-R HSTL High Speed Synchronous SRAM 512K x 36 or 1M x 18 3/33/4 Preliminary Description The CXK77N36B160GB (organized as 524,288 words by 36 bits) and the CXK77N18B160GB (organized as 1,048,576 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate input


    Original     		PDF CXK77N36B160GB CXK77N18B160GB CXK77N36B160GB functi540mA 130mA 220mA CXK77N18B160GB-3 CXK77N36B160GB-3 CXK77N36B160GB-33 CXK77N36B160GB-4 BGA-119

    SAS controller chip

    Abstract: CXK77N18B160GB-3 CXK77N36B160GB-3 CXK77N36B160GB-33 CXK77N36B160GB-4 SAS controller
    Text: SONY CXK77N36B160GB / CXK77N18B160GB 16Mb LW LS R-R HSTL High Speed Synchronous SRAM 512K x 36 or 1M x 18 3/33/4 Preliminary Description The CXK77N36B160GB (organized as 524,288 words by 36 bits) and the CXK77N18B160GB (organized as 1,048,576 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate input


    Original     		PDF CXK77N36B160GB CXK77N18B160GB CXK77N36B160GB IDD-28 650mA 500mA 540mA SAS controller chip CXK77N18B160GB-3 CXK77N36B160GB-3 CXK77N36B160GB-33 CXK77N36B160GB-4 SAS controller

    6T SRAM

    Abstract: SRAM 6T 16MB SRAM CY62147DV18 K6F1616R6C MT45W1MW16PD TSOP sensor project micron memory sram
    Text: TN-45-17: CellularRAM Replacing Single- and Dual-CE# SRAM Introduction Technical Note Using CellularRAM Memory to Replace Single- and Dual-Chip Select SRAM Introduction Micron CellularRAM™ devices are designed to be backward-compatible with 6T SRAM


    Original     		PDF TN-45-17: sheet--MT45W1MW16PD 09005aef8214f7dc/Source: 09005aef821149d2 TN4517 6T SRAM SRAM 6T 16MB SRAM CY62147DV18 K6F1616R6C MT45W1MW16PD TSOP sensor project micron memory sram

    IBM0418166XLAC

    Abstract: IBM0436166XLAC
    Text: . Preliminary IBM0436166XLAC IBM0418166XLAC 16Mb 512K x 36 & 1M x 18 SRAM Features • 512K x 36 or 1M × 18 organization • Common I/O • CMOS technology • Asynchronous output enable and sleep mode inputs • Synchronous pipeline mode of operation with


    Original     		PDF IBM0436166XLAC IBM0418166XLAC IBM0418166XLACdocument IBM0418166XLAC IBM0436166XLAC

    tsop-56 samsung

    Abstract: TC58DVM72A1FTI0 tc58fvm5t2atg TSOP1-48 THNCF1G02DG THNCF1G02DGI SD-M512 TC58NVG0S3AFTI5 THNCF128MMG toshiba Nand flash bga
    Text: TOSHIBA FLASH Network FCRAM NOR Flash SRAM Memory Selection Guide PSRAM NAND Flash Multi-Chip Packages Memory Cards September 2004 Toshiba America Electronic Components TOSHIBA Toshiba offers one of the widest varieties of memory products of any semiconductor manufacturer. Based on the three core memory technologies:


    Original     		PDF 576Mb 256Mb tsop-56 samsung TC58DVM72A1FTI0 tc58fvm5t2atg TSOP1-48 THNCF1G02DG THNCF1G02DGI SD-M512 TC58NVG0S3AFTI5 THNCF128MMG toshiba Nand flash bga

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK77Q36162GB 25/27/3 Preliminary 16Mb DDR1 HSTL High Speed Synchronous SRAM 512K x 36 Description The CXK77Q36162GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 524,288 words by 36 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a two-deep write buffer


    Original     		PDF CXK77Q36162GB CXK77Q36162GB 750mA 700mA

    CXK77L18162AGB-25

    Abstract: CXK77L18162AGB-27 CXK77L18162AGB-3 ddr1 ram
    Text: SONY CXK77L18162AGB 25/27/3 Preliminary 16Mb DDR1 HSTL High Speed Synchronous SRAM 1M x 18 Description The CXK77L18162AGB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 1,048,576 words by 18 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a two-deep write buffer


    Original     		PDF CXK77L18162AGB CXK77L18162AGB BGA-153P-021 BGA153-P-1422 CXK77L18162AGB-25 CXK77L18162AGB-27 CXK77L18162AGB-3 ddr1 ram

    BGA-153P-021

    Abstract: sony bus control BGA153-P-1422
    Text: SONY CXK77Q18162AGB Preliminary 16Mb DDR1 HSTL High Speed Synchronous SRAM 1M x 18 Description The CXK77Q18162AGB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 1,048,576 words by 18 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a two-deep write buffer


    Original     		PDF CXK77Q18162AGB CXK77Q18162AGB All35 BGA-153P-021 BGA153-P-1422 BGA-153P-021 sony bus control BGA153-P-1422

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH SYNCBURST SRAM 16Mb SYNCBURST SRAM MT58L1MY18F, MT58V1MV18F, MT58L512Y32F, MT58V512V32F, MT58L512Y36F, MT58V512V36F 3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Flow-Through FEATURES 100-Pin TQFP1 • Fast clock and OE# access times


    Original     		PDF 100-pin 165-pin Apr/13/00 Apr/6/00 Jan/18/00 MT58L1MY18F, Nov/11/99 MT58L1MY18F

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, SCD SYNCBURST SRAM 16Mb SYNCBURST SRAM MT58L1MY18P, MT58V1MV18P, MT58L512Y32P, MT58V512V32P, MT58L512Y36P, MT58V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Single-Cycle Deselect FEATURES


    Original     		PDF 100-pin 165-p. Apr/13/00 Apr/6/00 Jan/18/00 MT58L1MY18P, Nov/11/99 MT58L1MY18P

    CXK77L18162GB

    Abstract: CXK77L18162GB-25 CXK77L18162GB-27 CXK77L18162GB-3
    Text: SONY CXK77L18162GB 25/27/3 Preliminary 16Mb DDR1 HSTL High Speed Synchronous SRAM 1M x 18 Description The CXK77L18162GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 1,048,576 words by 18 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a two-deep write buffer


    Original     		PDF CXK77L18162GB CXK77L18162GB CXK77L18162GB-25 CXK77L18162GB-27 CXK77L18162GB-3

    GW 9n

    Abstract: MT58L512Y36D MT58V1MV18D MT58V512V32D MT58V512V36D 100-PIN MS-026 MT58L1MY18D MT58L512Y32D
    Text: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, DCD SYNCBURST SRAM 16Mb SYNCBURST SRAM MT58L1MY18D, MT58V1MV18D, MT58L512Y32D, MT58V512V32D, MT58L512Y36D, MT58V512V36D 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Double-Cycle Deselect FEATURES


    Original     		PDF MT58L1MY18D, MT58V1MV18D, MT58L512Y32D, MT58V512V32D, MT58L512Y36D, MT58V512V36D 100-Pin 165Vor Apr/6/00 Jan/18/00 GW 9n MT58L512Y36D MT58V1MV18D MT58V512V32D MT58V512V36D MS-026 MT58L1MY18D MT58L512Y32D

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH SYNCBURST SRAM 16Mb SYNCBURST SRAM MT58L1MY18F, MT58V1MV18F, MT58L512Y32F, MT58V512V32F, MT58L512Y36F, MT58V512V36F 3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Flow-Through FEATURES 100-Pin TQFP1 • Fast clock and OE# access times


    Original     		PDF 100-pin 165-pin Apr/13/00 Apr/6/00 Jan/18/00 MT58L1MY18F, Nov/11/99 MT58L1MY18F

    Samsung EOL

    Abstract: IS42S81600F is42s16320 IS43DR16320 IS42S32200L IS49NLC36800 IS43R32400E IS46R Mobile SDRAM IS42S32200E
    Text: Industrial Grade Memory Products Selecting the Right ISSI Industrial Grade Memory Fastest Random Access Access <20ns 288-576Mb Memory No DRC* Lower cost/bit 18-72Mb RLDRAM 10-20ns Easy Interface, Low Power Higher Density Ultra Low Power Synch SRAM <5ns Asynch SRAM


    Original     		PDF 288-576Mb 10-20ns 18-72Mb 64Kb-16Mb 8Mb-64Mb 16Mb-512Mb 16Mb-1Gb 256Mb-2Gb 200Mhz -40oC Samsung EOL IS42S81600F is42s16320 IS43DR16320 IS42S32200L IS49NLC36800 IS43R32400E IS46R Mobile SDRAM IS42S32200E

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, SCD SYNCBURST SRAM 16Mb SYNCBURST SRAM MT58L1MY18P, MT58V1MV18P, MT58L512Y32P, MT58V512V32P, MT58L512Y36P, MT58V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Single-Cycle Deselect FEATURES


    Original     		PDF 100-pin 165-p. Apr/13/00 Apr/6/00 Jan/18/00 MT58L1MY18P, Nov/11/99 MT58L1MY18P

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, DCD SYNCBURST SRAM 16Mb SYNCBURST SRAM MT58L1MY18D, MT58V1MV18D, MT58L512Y32D, MT58V512V32D, MT58L512Y36D, MT58V512V36D 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Double-Cycle Deselect FEATURES


    Original     		PDF 165Vor 100-pin 165-pin Apr/13/00 Apr/6/00 Jan/18/00 MT58L1MY18D, Nov/11/99 MT58L1MY18D