1700G Search Results

101A281

Contextual Info: Drawing Number – W13 Outline Number – 101A281 Weight 1700g Westcode Customer Services email: wsl.sales@westcode.com Telephone: +44 0 1249 444524 Fax: +44 (0)1249 659448

Contextual Info: Drawing Number – W7 Outline Number – 100A293 Weight 1700g Westcode Customer Services email: wsl.sales@westcode.com Telephone: +44 0 1249 444524 Fax: +44 (0)1249 659448

Contextual Info: Drawing Number – W51 Outline Number – 101A334 Weight 1700g Westcode Customer Services email: wsl.sales@westcode.com Telephone: +44 0 1249 444524 Fax: +44 (0)1249 659448

100a

Contextual Info: Drawing Number – W29 Outline Number – 100A342 Weight 1700g Westcode Customer Services email: wsl.sales@westcode.com Telephone: +44 0 1249 444524 Fax: +44 (0)1249 659448

Contextual Info: TOSHIBA SG4000GXH29 TOSHIBA GATE TURN-OFF THYRISTOR TENTATIVE INVERTER APPLICATION SG4000GXH29 Unit in mm Repetitive Peak Off-State Voltage V d RM = 4500V R.M.S On-State Current *T RMS = 1900A Peak Turn-Off Current IT G Q M = 4000A Critical Rate of Rise of On-State Current : d i/d t = 500A/ jus

IR 2638

Abstract: tamura 24h CSA1402 Tamura switching OVS-24H R9650
Contextual Info: SINGLE OUTPUT SWITCHING POWER SUPPLIES $ M ICROTRAN *1 File No. E 140527 Features • UL1950, CSA1402C, CSA 22.2 No. 234 UC Series, VDE0805, EN60950 • Jum per Selectable. • 9 0 -1 3 2 /180-264VAC. • EMI Input Filter. • AC Power Fail Signal. • 100,000-150,000 hrsM TBF.

Contextual Info: TOSHIBA GATE TURN-OFF THYRISTOR SEMICONDUCTOR T O SH IB A TECHNICAL SG3000JX24 DATA SG3000JX24 Unit in mm INVERTER APPLICATION £ -0 3 .5 x 0 .2 Repetitive Peak Off-State Voltage : V d r m = 6000V R.M.S On-State Current : It (RMS)= 1200A Peak Turn-Off Current

160nF

Abstract: DIM900ESM45-F000
Contextual Info: Preliminary Data DIM900ESM45-F000 Single Switch IGBT Module DS5872-1.0 October 2005 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability

Contextual Info: TOSHIBA GATE TURN-OFF THYRISTOR SEMICONDUCTOR T O SH IB A TECHNICAL SG3000JX24 DATA SG3000JX24 Unit in mm INVERTER APPLICATION £ -0 3 .5 x 0 .2 Repetitive Peak Off-State Voltage : V d r m = 6000V R.M.S On-State Current : It (RMS)= 1200A Peak Turn-Off Current

SG3000JXH25

Contextual Info: TOSHIBA TENTATIVE SG3000JXH25 TOSHIBA GATE TURN-OFF THYRISTOR SG3000JXH25 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage VDRM = 6500V Note 1 Repetitive Peak Reverse Voltage : VRRM = 6500V R.M.S On-State Current • :T (RMS)= 800À Peak Turn-Off Current

DRF200

Abstract: EN61000-4-2 EN61000-4-3 EN61000-4-4 EN61000-4-5
Contextual Info: AC-DC DIN Rail 50-200 Watts THE XPERTS IN POWER DRF Series Input 187-528 VAC 1Ø • • Adjustable Output • High Peak Current Capability • Overvoltage Protection • Overcurrent Protection • International Safety Approvals Specification Input Input Voltage

SL1500GX24

Abstract: X103
Contextual Info: T O S H IB A SL1500GX24 TOSHIBA ALLOY-FREE LIGHT TRIGGER THYRISTOR S L1 500G X 24 Unit in mm HIGH PO W ER CONTROL APPLICATIONS • • Repetitive Peak Off-State Voltage : VDRjyn = 4000V Repetitive Peak Reverse Voltage VRRM Average On-State Current It AV -1500A

DG858DW

Abstract: thyristor drive dc motor speed control 300A thyristor gate control circuit Gate Turn-off 100A 750V HS- 2000V induction heat circuit DG858DW45 DS4334-4 2S300
Contextual Info: DG858DW45 DG858DW45 Gate Turn-Off Thyristor Replaces July 1999 version, DS4334-4.0 DS4334-4.1 May 2000 FEATURES KEY PARAMETERS 3000A ITCM 4500V VDRM 1100A IT AV 750V/µs dVD/dt 300A/µs dIT/dt ● Double Side Cooling ● High Reliability In Service ● High Voltage Capability

DFM1200EXM12-A000

Abstract: DFM1200EXM12 DFM1200EXM
Contextual Info: DFM1200EXM12-A000 Fast Recovery Diode Module DS5481-1.4 June 2008 LN26170 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated Copper Base plate • Triple Diodes Can be paralleled for 3600A KEY PARAMETERS

AN4502

Abstract: AN4503 AN4505 GP2401ESM18 3,3 kw high frequency transistor module
Contextual Info: GP2401ESM18 GP2401ESM18 Hi-Reliability Single Switch Low VCE SAT IGBT Module Replaces February 2000 version, DS5345-1.0 FEATURES • Low VCE(SAT) ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5345-2.4 January 2001

DIM1500ASM33-TS001

Contextual Info: DIM1500ASM33-TS001 Single Switch IGBT Module Replaces DS6095-1 DS6095-2 September 2014 LN31956 FEATURES KEY PARAMETERS • 10.2kV Isolation  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max)

DG858DW45

Contextual Info: DG858DW45 DG858DW45 Gate Turn-Off Thyristor Replaces July 1999 version, DS4334-4.0 DS4334-4.1 May 2000 FEATURES KEY PARAMETERS 3000A ITCM 4500V VDRM 1100A IT AV 750V/µs dVD/dt 300A/µs dIT/dt ● Double Side Cooling ● High Reliability In Service ● High Voltage Capability

DIM1200ESM33-A000

Contextual Info: DIM1200ESM33-A000 DIM1200ESM33-A000 Single Switch IGBT Module Replaces May 2002, version DS5492-3.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5492-4.0 June 2002

Contextual Info: DIM1200ESM33-A000 DIM1200ESM33-A000 Single Switch IGBT Module Replaces February 2003, version DS5492-5.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates

Contextual Info: DFM400XXM65-K000 Fast Recovery Diode Module DS5806-1.2 March 2006 LN24499 . FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated MMC Base plate With AIN Substrates • Dual Diodes Can Be Paralleled for 800A Rating

Contextual Info: @ M ITEL DG858BW45 Gate Turn-off Thyristor SEMICONDUCTOR Supersedes March 1995 version, DS4096 - 2.1 DS4096 - 2.2 APPLICATIONS March 1998 KEY PARAMETERS • Variable speed A.C. motor drive inverters VSD-AC . 'tc m 3 °°°A ■ Uninterruptable Power Supplies

Contextual Info: DIM1500ASM33-TS001 Single Switch IGBT Module DS6095-1 April 2013 LN30405 FEATURES KEY PARAMETERS • 10.2kV Isolation  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  High Current Density Enhanced DMOS SPT

IC 7800

Abstract: DIM1200ESM33-A000
Contextual Info: DIM1200ESM33-A000 DIM1200ESM33-A000 Single Switch IGBT Module Replaces June 2002, version DS5492-4.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5492-5.0 February 2003

84A16

Contextual Info: TOSHIBA GATE TU RN -O FF THYRISTOR SEMICONDUCTOR T O SH IB A TECHNICAL SG4000JX26 DATA LOW SNUBBER TYPE SG4000JX26 INVERTER APPLICATION Repetitive Peak Off-State Voltage : Vj)R]y[ = 6000V (Note 1) R.M.S On-State Current : It (RMS) = 1600A (Tf = 75°C) Peak Turn-Off Current