175 MHZ FM Search Results

9552N

Abstract: 8802n 5504L 2N3632 2N44 THB94 XO-72 SD1577 SD1574 CB299
Contextual Info: 130. 230 MHz C L A S S C FOR FM MOBILIE A P P L IC A T IO N S Vcc PACKAGE TYPf C O N F IG . V ^out min (W ) fo Pin (M H z) (W) Gp min (dB) 150 175 175 175 150 0,1 0,1 0,25 0,79 0,22 7 8 8 5 11 _ — — — — 175 175 175 175 175 175 175 175 175 175

88-108

Abstract: an power 88-108 mhz 88-108 mhz w power 88-108 mhz Power w
Contextual Info: FM 175 175 Watts, 28 Volts Broadcast 88 - 108 MHz GENERAL DESCRIPTION TheFM 175 is a high power COMMON EMITTER bipolar transistor. It is designed for pulsed systems in the frequency band 88-108 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest

MRF247

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed for 12.5 Volt VHF large-signal am plifier applications in industrial and com mercial FM equipment operating to 175 MHz. • Specified 12.5 Volt, 175 MHz Characteristics —

mrf247

Abstract: amplifier mrf247 CAPACITOR SPRAGUE L5150
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF247 The MRF247 is designed for 12.5 Volt VHF large-signal amplifier applications in industrial and commercial FM equipment operating to 175 MHz. • Specified 12.5 Volt, 175 MHz Characteristics —

Contextual Info: a CMOS 175 MHz DDS/DAC Synthesizer PRELIMINARY TECHNICAL DATA AD9851 FEATURES 175 MHz Clock Rate 6X Internal Reference Clock Multiplier On-chip High-performance 10-bit DAC & High-speed Comparator SFDR >48 dB@70 MHz Aout 32-bit Frequency Tuning Word Simplified Control Interface: Parallel

MRF221

Abstract: wide band choke vk200 MRF216 2N6081 VK200 VK200 ferrite broad band operation
Contextual Info: M RF216 silicon Tine RF L ine 40 W — 175 MHz CONTROLLED O RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . .designed for 12.5 V o lt V H F large-signal am plifier applications in industrial and commercial FM equipment operating to 175 MHz.

MRF247

Abstract: mica trimmer capacitor unelco mica trimmer capacitor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line N PN Silico n RF Pow er T ransistor The M R F247 is designed for 12.5 Volt V H F large-signal amplifier applications in industrial and commercial FM equipment operating to 175 MHz. • Specified 12.5 Volt, 175 MHz Characteristics —

MRF151G

Abstract: mrf151g 300 mosfet m
Contextual Info: MRF151G Part Status: Released RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET Features M/A-COM Products RoHS Compliant Package Outline Guaranteed Performance at 175 MHz, 50 V: • • • • • • Output Power — 300 W

inductor vk200

Abstract: VK200 INDUCTOR MRF238 VK200-4B VK200 4B inductor vk200 rf choke rasistor marine radio 02CM arco trimmer
Contextual Info: i MRF238 MOTOROLA Advance Information 30 W — 160 MHz The RF Line RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . . designed for 13.6 Volt VHF large»signal amplifier applications in industrial and commercial FM equipment operating to 175 MHz.

BLY92C

Abstract: BLY92C RF
Contextual Info: BLY92C NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The BLY92C is Designed for Class C FM Amplifier Applications up to 250 MHz. PACKAGE STYLE .380" 4L STUD FEATURES: • PG = 11 dB Typical at 175 MHz • High Load VSWR Capability • Omnigold Metalization System

BLV11

Contextual Info: BLV11 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV11 is Designed for Class C, 12.5 Volt operation in FM Amplifier Applications up to 250 MHz. FEATURES INCLUDE: • PG = 9.0 dB Typical at 175 MHz • Emitter Ballasting • Omnigold Metalization System

BY1-1F

Abstract: BAM40 A1512 2N5070 88-108 S100-28 A8012A BY177 S175-50 2N3553 NPN
Contextual Info: VHF- 30-80 MHz Type Polarity 2N5071 A15-12* A80-12* * A80-12A* * NPN NPN NPN NPN V H F -88-108 MHz FM 75 NPN FM 150 NPN VH F 130-175 2N3632 2N3553 B15-12 B30-12 B45-12 BM80-12* * BAM20* BAM40* BAM80* BAM120* MHz NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN

MRF247

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF247 The RF Line 75 W - 175 MHz CONTROLLED Q RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR . . . designed fo r 1 2 .5 V o lt V H F large-signal am plifier applications N P N S IL IC O N in industrial and com m ercial FM equ ipm ent operating to 175 M H z.

BLY92C

Contextual Info: BLY92C NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLY92C is designed for Class C FM amplifier applications up to 250 MHz. PACKAGE STYLE .380 4L STUD A .112x45° FEATURES: • PG = 11 dB typical at 175 MHz • High VSWR capability • Omnigold Metalization System

Contextual Info: <Silicon RF Power Modules > RA30H1721M RoHS Compliance , 175-215MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H1721M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 175- to 215-MHz range. The battery can be connected directly to the drain of the

Contextual Info: <Silicon RF Power Modules > RA30H1721M RoHS Compliance , 175-215MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H1721M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 175- to 215-MHz range. The battery can be connected directly to the drain of the

RF MOSFETs

Abstract: motorola bipolar transistor data manual application MOSFET transmitters fm amplifier RF CLASS B FET MOSFET
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF173 RF Power Field E ffect Transistor N-Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 200 MHz

MRF173

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF173 RF Power Field Effect Transistor N–Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N–CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 200 MHz

Contextual Info: MS1202 RF & MICROWAVE TRANSISTORS FM MOBILE APPLICATIONS • • • • • 175 MHz 12.5 VOLTS POUT = 7.0 W GP = 8.4 dB MINIMUM COMMON EMITTER CONFIGURATION The MS1202 is a epitaxial silicon NPN transistor designed for 12.5 volt class C applications in the 118 – 136 MHz frequency band and 28 volt FM

t 3866 power transistor

Abstract: transistor 571 transistor 3866 s transistor d 5702 e d 5703 t 3866 transistor transistor 2N 5688 2N3553 transistor t 3866 3866 transistor 2n RF transistor
Contextual Info: 2N3553 SILICON NPN VHF POWER TRANSISTOR 571 HIGH GAIN DRIVE R FOR 28 V FM APPLICATIONS • • 2.5 W a t 175 MHz Minimum Gain 10 dB mechanical data • • - 6 , 6 - » -12,7 mm - -

tic 136

Contextual Info: VHF Applications High Band FM 136-175 MHz PART NO. FREQ. Pout Pin GAIN TIC Min W (W) Min (dB) Min (MHz) MS1403 150 1.4 0.1 MS1401 150 2.5 MS1504 160 MS1506 Vcc 6jC PKG Max STYLE (%) (V) (°C/W) 11.5 - 7.5 35 M123 0.2 11 - 7.5 11.6 M123 30 3 10 - 13.6 1.2

MRF173

Contextual Info: MOTOROLA Order this document by MRF173/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N–CHANNEL BROADBAND RF POWER MOSFET ARCHIVE INFORMATION Designed for broadband commercial and military applications up to 200 MHz

Contextual Info: MS1202 RF & MICROWAVE TRANSISTORS FM MOBILE APPLICATIONS Features • • • • • 175 MHz 12.5 VOLTS POUT = 7.0 W GP = 8.4 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1202 is a epitaxial silicon NPN transistor designed for 12.5 volt class C applications in the 118 – 136 MHz frequency band and 28 volt FM

Contextual Info: MOTOROLA Order this document by MRF247/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF247 . . . designed for 12.5 Volt VHF large–signal amplifier applications in industrial and commercial FM equipment operating to 175 MHz.