175 WIV Search Results

Contextual Info: SEM IC O N DU C TO R 300 mW DO-34 Hermetically Sealed Glass Fast Switching Diodes Absolute Maximum Ratings TSTG TJ WIV Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature TC1N4148M Value Units 300 mW -65 to +150 °C +175

DB050

Contextual Info: SEM IC O N DU C TO R 300 mW DO-34 Hermetically Sealed Glass Fast Switching Diodes Absolute Maximum Ratings TSTG TJ WIV Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature TC1N4148M Value Units 300 mW -65 to +150 °C +175

DSAIH00025335

Abstract: 1N464A
Contextual Info: B K C INTERNATIONAL 03E D | llT'HflB OQODSVt M 7 ~ -4 / GENERAL PURPOSE HIGH CONDUCTANCE DIODES 1N462A 1N463A ABSOLUTE MAXIMUM RATINGS • VF • lH 1.0 V @ 100 mA 500 nA @ WIV Temperatures -65 °C to +200 °C +175 °C +260 °C Storage Temperature Range Maximum Junction Operating Temperature

IRFZ24A

Contextual Info: IRFZ24A Advanced Power MOSFET FEATURES BVdss = 60 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175*0 Operating Temperature ■ Lower Leakage Current : 10 p A M a x @ VDS= 60V

IRFS520A

Abstract: T0-220F diode cm 72a
Contextual Info: IRFS520A Advanced Power MOSFET FEATURES B V DSS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge — ^DS on = lD = ■ Extended Safe Operating ■ 175°C ■ Lower Leakage Current:10 H A (Max.) @ V DS = 100V

1N461A

Abstract: 1N462A 1N463A 1N464A 1N463 175 WIV
Contextual Info: B K C IN TE RNA TIO NA L 03E D | llT'HflB OQODSVt 4 7~ -0 / GENERAL PURPOSE HIGH CONDUCTANCE DIODES 1N462A 1N463A ABSOLUTE MAXIMUM RATINGS • VF • lH 1.0 V @ 100 mA 500 nA @ W IV Temperatures -65 °C to +200 °C +175 °C +260 °C Storage Temperature Range

Contextual Info: Flatpack Quadrature Hybrid 175-350 MHz • Octave Bandwidth ■ Low VSW R — 1.2:1 Typical JH-136 C p .O PIN 0.015 DIA ¿0 .00 5 <0.38 *0.13 • a PLACES Guaranteed Specifications4 From - 55°C to +85°C) D im e n s io n s in ( ) are in m m. Frequency Range

DSAIH0002537

Contextual Info: B K C INTERNATIONAL □ 3E D I 1 1 7 ^ 0 3 □□□□274 D j p HIGH CONDUCTANCE LOW LEAKAGE DIODES T -ô h ô f 1N3595 1N6099 ABSOLUTE MAXIMUM RATINGS • Bv • Vp 150 V MIN @ 100 (iA 1.0 V @ 200 mA Temperatures -65 °C to +200 °C +175 °C +260 °C Storage Temperature Range

1N4009

Abstract: to3a
Contextual Info: B K C INTERNATIONAL □ 3E D I 117^ 03 □ □ Ü 0EÖ 3 1 |"~ T -Ô 3 - â<f ULTRA HIGH SPEED DIODES 1N4009 A B S O LU T E MAXIMUM RATINGS ‘ Tm • Bv 20 ns 35 V MIN <§>5 |iA Temperatures -65 °C to +200 °C +175°C +260 °C Storage Temperature Range

BAV19

Abstract: BAV20 BAV21
Contextual Info: BAV19, BAV20, BAV21 HIGH VOLTAGE GENERAL PURPOSE DIODES Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit WIV WIV WIV 100 150 200 V V V IF(AV) 200 mA DC Forward Current IFM 500 mA Recurrent Peak Forward Current IFRM 600 mA Non-repetitive Peak Forward Surge Current

DO35

Abstract: TC1N4148 TC1N4448 TC1N914B DB-036
Contextual Info: SEM IC O N DU C TO R 500 mW DO-35 Hermetically Sealed Glass Fast Switching Diodes AXIAL LEAD DO35 Absolute Maximum Ratings Symbol PD TSTG TJ WIV TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature

BAV21

Abstract: BAV19 BAV20
Contextual Info: BAV19, BAV20, BAV21 HIGH VOLTAGE GENERAL PURPOSE DIODES Absolute Maximum Ratings Ta = 25oC Symbol Value Unit WIV WIV WIV 100 150 200 V V V IF(AV) 200 mA DC Forward Current IFM 500 mA Recurrent Peak Forward Current IFRM 600 mA Non-repetitive Peak Forward Surge Current

DO35

Abstract: 175 WIV High Switching
Contextual Info: TAK CHEONG TCBAW76 SEM IC O N DU C TO R 500 mW DO-35 Hermetically Sealed Glass Fast Switching Diodes AXIAL LEAD DO35 Absolute Maximum Ratings Symbol PD TSTG TJ WIV TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature

BAV21

Abstract: BAV19 BAV20
Contextual Info: BAV19, BAV20, BAV21 HIGH VOLTAGE GENERAL PURPOSE DIODES Absolute Maximum Ratings Ta = 25oC Symbol Value Unit WIV WIV WIV 100 150 200 V V V IF(AV) 200 mA DC Forward Current IFM 500 mA Recurrent Peak Forward Current IFRM 600 mA Non-repetitive Peak Forward Surge Current

sem 304

Abstract: SEM 2006 JEDEC do-204
Contextual Info: TAK CHEONG 300 mW DO-34 Hermetically Sealed Glass Switching Diodes Absolute Maximum Ratings PD TSTG TJ WIV AXIAL LEAD DO34 TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature Value Units

SEM 2006

Contextual Info: TAK CHEONG TCBAW76 SEM IC O N DU C TO R 500 mW DO-35 Hermetically Sealed Glass Fast Switching Diodes AXIAL LEAD DO35 Absolute Maximum Ratings Symbol PD TSTG TJ WIV TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature

1S921

Abstract: 1S920 1s922 equivalent 1s923
Contextual Info: FAIRCHILD SEMICON DUC TO R A4 DEr| 34bTb74 DDS7S0D A 1S920/921/922/923 FDLL920/921/922/923 FAIRCHILD A Schlumberger Company General Purpose Diodes _ T - ° \ ' o C \ • V p . . . 1.2 MAX @ 200 mA • Ir . . 100 nA (MAX) @ RATED WIV ABSOLUTE MAXIMUM RATINGS (Note 1)

SEM 2006

Abstract: JEDEC do-204 do-34 TC1N4148M
Contextual Info: TAK CHEONG SEM IC O N DU C TO R 500 mW DO-34 Hermetically Sealed Glass Fast Switching Diodes Absolute Maximum Ratings TSTG TJ WIV Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature TC1N4148M Value Units 500 mW -65 to +200

1n457

Abstract: n456a DSAIH00025333 1N456A
Contextual Info: B K C INTERNATIONAL □ 3E D I 117^^03 □□□□275 2 7 - - Ó / - Ó LOW LEAKAGE DIODES 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N459 1N459A ABSOLUTE MAXIMUM RATINGS • l„ • C 25 nA @ WIV 6.0 pF Temperatures Storage Temperature Range Maximum Junction Operating Temperature

Contextual Info: DIGITRON SEMICONDUCTORS 1N3064, 1N4305, 1N4454 SWITCHING RECTIFIERS MAXIMUM RATINGS Rating Symbol Value Unit WIV 50 V Average rectified current IO 100 mA Forward current steady state IF 300 mA Recurrent peak forward current if 400 mA if surge 1.0 4.0 A Power dissipation

MINI-MELF DIODE BLACK CATHODE

Contextual Info: TAK CHEONG SEM IC O N DU C TO R 500mW QUADRO Mini-MELF Hermetically Sealed Glass Fast Switching Diodes Absolute Maximum Ratings Symbol PD TSTG TJ WIV TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature

AW76

Contextual Info: TAK CHEONG TCBAW76 SEM IC O N DU C TO R 500 mW DO-35 Hermetically Sealed Glass Fast Switching Diodes AXIAL LEAD DO35 Absolute Maximum Ratings Symbol PD TSTG TJ WIV TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature

Contextual Info: TAK CHEONG TCBAW76 SEM IC O N DU C TO R 500 mW DO-35 Hermetically Sealed Glass Fast Switching Diodes AXIAL LEAD DO35 Absolute Maximum Ratings Symbol PD TSTG TJ WIV TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature

Contextual Info: SEM IC O N DU C TO R 500 mW DO-35 Hermetically Sealed Glass Fast Switching Diodes AXIAL LEAD DO35 Absolute Maximum Ratings Symbol PD TSTG TJ WIV TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature